® FES16AT thru FES16JT Pb FES16AT thru FES16JT Pb Free Plating Product 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diode Features Glass passivated chip junction Low forward voltage drop High current capability Low reverse leakage current High surge current capability TO-220AC Unit : inch (mm) .419(10.66) .387(9.85) .196(5.00) .163(4.16) .139(3.55) MIN .054(1.39) Application .177(4.5)MAX Mechanical Data Case: Heatsink TO-220AC Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.1 gram approxiamtely .50(12.7)MIN Automotive Inverters/Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems .038(0.96) .019(0.50) .624(15.87) .548(13.93) .269(6.85) .226(5.75) .045(1.15) .025(0.65)MAX .1(2.54) .1(2.54) Positive Negative Suffix "T" Suffix "TR" Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol FES FES FES FES FES 16AT 16BT 16CT 16DT 16FT FES FES 16GT 16HT FES 16JT Unit V Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 Maximum RMS Voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 500 600 V Maximum Average Forward Rectified Current IF(AV) 16 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) IFSM 200 A Maximum Instantaneous Forward Voltage (Note 1) @ 16 A Maximum Reverse Current @ Rated VR T A=25 ℃ T A=100 ℃ VF Trr Typical Junction Capacitance (Note 3) Cj Operating Temperature Range Storage Temperature Range RθjC 1.3 1.7 10 IR Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance 0.975 uA 400 35 130 nS 100 1 V pF TJ - 65 to + 150 ℃/W ℃ TSTG - 65 to + 150 ℃ Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Rev.04/2014 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ ® FES16AT thru FES16JT RATINGS AND CHARACTERISTIC CURVES (FES16AT thru FES16JT) FIG. 2 TYPICAL REVERSE CHARACTERISTICS FIG.1 FORWARD CURRENT DERATING CURVE 1000 16 12 8 4 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 CASE TEMPERATURE (oC) 100 TA=100℃ 10 TA=75℃ 1 FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 250 PEAK FORWARD SURGE A CURRENT (A) INSTANTANEOUS REVERSE CURRENT(uA) AVERAGE FORWARD A CURRENT (A) 20 TA=25℃ 8.3mS Single Half Sine Wave JEDEC Method 200 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 150 100 50 0 1 10 NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL FORWARD CHARACTERISRICS 100 100 INSTANTANEOUS FORWARD CURRENT (A) FES16AT-FES16DT FIG. 4 TYPICAL JUNCTION CAPACITANCE 300 TA=25℃ CAPACITANCE (pF) 250 200 FES16AT-FES16DT 150 100 FES16FT-FES16JT 10 1 FES16FT-FES16GT FES16HT-FES16JT 0.1 TA=25℃ Pulse Width=300us 1% Duty Cycle 50 0 0.01 1 10 100 REVERSE VOLTAGE (V) Rev.04/2014 © 2006 Thinki Semiconductor Co.,Ltd. 1000 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 1.6 1.8 Page 2/2 http://www.thinkisemi.com/