Mitsubishi M63826GP 7-unit 500ma darlington transistor-array with clamp diode Datasheet

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M63826P, M63826FP and M63826GP are seven-circuit
Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor
integrated circuits perform high-current driving with extremely low input-current supply.
Production lineup has been newly expanded with the addition of 225mil (GP) package.
M63826P and M63826FP have the same pin connection as
M54526P and M54526FP. (Compatible with M54526P and
M54526FP) More over, the features of M63826P and
M63826FP are equal or superior to those of M54526P and
M54526FP.
PIN CONFIGURATION
INPUT
IN1→
1
16 →O1
IN2→
2
15 →O2
IN3→ 3
14 →O3
IN4→ 4
13 →O4
IN5→
5
12 →O5
IN6→
6
11 →O6
IN7→
7
10 →O7
GND
8
9
OUTPUT
→COM COMMON
16P4(P)
16P2N-A(FP)
Package type 16P2S-A(GP)
FEATURES
● Three package configurations (P, FP and GP)
● Pin connection Compatible with M54526P and M54526FP
●
●
●
●
●
High breakdown voltage (BVCEO ≥ 50V)
High-current driving (IC(max) = 500mA)
With clamping diodes
Driving available with PMOS IC output of 8-18V
Wide operating temperature range (Ta = –40 to +85°C)
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
10.5k
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
7.2k
3k
GND
The seven circuits share the COM and GND
FUNCTION
The M63826P, M63826FP and M63826GP each have seven
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 10.5kΩ between input transistor bases
and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The
output transistor emitters are all connected to the GND pin
(pin 8). The collector current is 500mA maximum. Collectoremitter supply voltage is 50V maximum.The M63826FP and
M63826GP is enclosed in molded small flat package, enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
(Unless otherwise noted, Ta = –40 ~ +85°C)
Parameter
Collector-emitter voltage
Collector current
Conditions
Output, H
Current per circuit output, L
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Unit : Ω
Ratings
–0.5 ~ +50
500
–0.5 ~ +30
500
50
Ta = 25°C, when mounted on board
1.47(P)/1.00(FP)/0.80(GP)
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VO
Limits
Parameter
Output voltage
Collector current
(Current per 1 circuit when 7 circuits
are coming on simultaneously)
IC
VIH
VIL
Duty Cycle
P : no more than 8%
FP : no more than 5%
GP : no more than 4%
Duty Cycle
P : no more than 30%
FP : no more than 20%
GP : no more than 15%
min
0
typ
—
max
50
0
—
400
Unit
V
mA
0
—
“H” input voltage
5
—
25
“L” input voltage
0
—
0.5
200
V
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
VCE(sat)
II
VF
IR
h FE
Limits
Test conditions
ICEO = 100µA
II = 500µA, IC = 350mA
Collector-emitter saturation voltage II = 350µA, IC = 200mA
II = 250µA, IC = 100mA
Input current
VI = 10V
Clamping diode forward volltage
IF = 350mA
Clamping diode reverse current
VR = 50V
DC amplification factor
VCE = 4V, I C = 350mA
min
50
—
—
—
—
typ
—
1.2
1.0
0.9
0.9
max
—
1.6
1.3
1.1
1.4
—
—
1000
1.4
—
2500
2.0
100
—
Unit
V
V
mA
V
µA
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C)
Symbol
ton
toff
Parameter
Limits
Test conditions
Turn-on time
Turn-off time
CL = 15pF (note 1)
NOTE 1 TEST CIRCUIT
min
—
typ
15
max
—
—
350
—
Unit
ns
ns
TIMING DIAGRAM
INPUT
Vo
INPUT
Measured device
50%
50%
RL
OPEN
OUTPUT
PG
OUTPUT
50Ω
50%
50%
CL
ton
toff
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
VP = 8VP-P
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
2.0
500
M63826FP
1.0
0.744
M63826GP
0.520
0.418
0.5
0
25
75 85
50
300
200
Ta = 25°C
100
2
3
200
•The collector current values
represent the current per circuit.
•Repeated frequencyy ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
20
40
60
80
4
5
6
7
1
300
2
200
100
0
100
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 85°C
0
20
40
60
80
Duty cycle (%)
Duty Cycle-Collector Characteristics
(M63826FP)
Duty Cycle-Collector Characteristics
(M63826FP)
3
4
5
6
7
100
500
2
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
20
40
60
Duty cycle (%)
80
3
4
5
6
7
100
Collector current Ic (mA)
1
300
0
400
Duty cycle (%)
400
0
2.0
500
500
100
1.5
Duty Cycle-Collector Characteristics
(M63826P)
300
0
1.0
0.5
Duty Cycle-Collector Characteristics
(M63826P)
1
100
0
Output saturation voltage VCE(sat) (V)
400
0
0
100
Ta = –40°C
Ambient temperature Ta (°C)
500
Collector current Ic (mA)
400
Ta = 85°C
0
Collector current Ic (mA)
Collector current Ic (mA)
M63826P
1.5
Collector current Ic (mA)
Power dissipation Pd(max) (W)
II = 500µA
400
300
1
200
2
3
4
•The collector current values
5
represent the current per circuit.
76
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit. •Ta = 85°C
100
0
0
20
40
60
80
100
Duty cycle (%)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63826P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63826GP)
Duty Cycle-Collector Characteristics
(M63826GP)
500
400
1
300
2
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
100
0
3
4
5
6
7
20
0
40
60
80
Collector current Ic (mA)
Collector current Ic (mA)
500
200
2
100
20
40
60
80
100
DC Amplification Factor
Collector Current Characteristics
Grounded Emitter Transfer Characteristics
500
VCE = 4V
Ta = 85°C
2
103
Ta = –40°C
7
5
Ta= 25°C
3
400
300
200
Ta = 85°C
Ta = 25°C
100
2
Ta = –40°C
2
3
5 7 102
2
0
5 7 103
3
0
1
2
3
4
Collector current IcC (mA)
Input voltage VI (V)
Input Characteristics
Clamping Diode Characteristics
5
500
3
Ta = –40°C
2
Ta = 25°C
1
Ta = 85°C
0
5
10
15
Input voltage VI (V)
20
25
Forward bias current IF (mA)
4
0
3
4
5
6
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit. •Ta = 85°C
Duty cycle (%)
Collector current Ic (mA)
DC amplification factor hFE
1
Duty cycle (%)
3
102
101
Input Current II (mA)
300
0
0
100
104
7
5
400
400
300
200
Ta = 25°C
100
Ta = 85°C
0
0
0.5
Ta = –40°C
1.0
1.5
2.0
Forward bias voltage VF (V)
Jan. 2000
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