HAT2244WP Silicon N Channel Power MOS FET Power Switching REJ03G1549-0400 Rev.4.00 Jun 13, 2007 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 10 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C REJ03G1549-0400 Rev.4.00 Jun 13, 2007 Page 1 of 7 Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-c Note3 Tch Tstg Ratings 80 ±20 30 120 30 25 83 25 5 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C HAT2244WP Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) Min 80 — — 0.8 — — 42 — — — — — — — — — — Typ — — — — 10 11.5 70 3520 410 160 1.2 60 9.5 9.0 9.5 14.5 56 Max — ± 0.5 1 2.3 12.5 15.5 — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns tf VDF trr — — — 9.5 0.83 50 — 1.08 — ns V ns Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test REJ03G1549-0400 Rev.4.00 Jun 13, 2007 Page 2 of 7 Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 80 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 4.5 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V ID = 30 A VGS = 10 V, ID = 15 A VDD ≅ 30 V RL = 2 Ω Rg = 4.7 Ω IF = 30 A, VGS = 0 Note4 IF = 30 A, VGS = 0 diF/ dt = 100 A/ µs HAT2244WP Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 10 µs Drain Current ID (A) Channel Dissipation Pch (W) 40 30 20 10 0 50 100 150 100 1 0 s 10 µs Operation in this area is 1 limited by RDS(on) PW = 10 ms DC Operation Tc=25°C 0.1 Ta = 25°C 0.01 1 shot Pulse 0.1 0.3 1 3 10 30 100 300 1000 200 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 50 50 3.1 V VDS = 10 V Pulse Test 10 V 2.9 V 40 Drain Current ID (A) Drain Current ID (A) 10 m 30 2.7 V 20 10 VGS = 2.5 V 40 30 Tc = 75°C 20 25°C 10 –25°C Pulse Test 2 4 6 8 0 10 1 2 3 5 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 250 Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 0 Pulse Test 200 150 ID = 10 A 100 5A 50 2A 0 5 10 15 20 Gate to Source Voltage VGS (V) REJ03G1549-0400 Rev.4.00 Jun 13, 2007 Page 3 of 7 100 Pulse Test 50 20 VGS = 4.5 V 10 10 V 5 2 1 1 10 Drain Current ID (A) 100 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2244WP 50 Pulse Test 40 30 1 A, 2 A, 5 A 20 VGS = 4.5 V ID = 1 A, 2 A, 5 A 10 10 V 0 –25 0 25 50 75 100 125 150 Tc = –25°C 25°C 10 75°C VDS = 10 V Pulse Test 1 0.1 0.3 3 1 10 30 Drain Current ID (A) Body–Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 10000 Capacitance C (pF) Ciss 50 20 10 0.1 1 1000 Coss 300 100 Crss VGS = 0 f = 1 MHz 10 10 100 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID = 30 A 80 16 VDS = 50 V 25 V 10 V VGS 60 VDS 40 12 8 20 4 VDS = 50 V 25 V 10 V 20 40 60 80 Gate Charge Qg (nc) REJ03G1549-0400 Rev.4.00 Jun 13, 2007 Page 4 of 7 0 100 1000 Switching Time t (ns) 100 0 3000 30 di/dt = 100 A/µs VGS = 0, Ta = 25°C Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 100 Case Temperature Tc (°C) 100 Drain to Source Voltage VDS (V) 1000 VGS = 10 V, VDS = 30 V Rg = 4.7 Ω, duty ≤ 1 % 100 td(off) tf 10 td(on) tr 1 0.1 1 10 Drain Current ID (A) 100 HAT2244WP Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IF (A) 50 40 30 10 V VGS = 0 V, –5 V 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 100 IAP = 25 A VDD = 50 V duty < 0.1 % Rg ≥ 50 Ω 80 60 40 20 0 25 Source to Drain Voltage VSDF (V) 50 75 100 Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width Tc = 25°C D=1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 θch - c(t) = γs (t) • θch - c θch - c = 5°C/ W, Tc = 25°C e t ho 1s ls pu PDM D= 0.001 PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m Pulse Width PW (s) REJ03G1549-0400 Rev.4.00 Jun 13, 2007 Page 5 of 7 150 Channel Temperature Tch (°C) 10 1 125 1 10 HAT2244WP Avalanche Test Circuit Avalanche Waveform EAR = L V DS Monitor 1 2 L • IAP2 • VDSS VDSS - V DD I AP Monitor V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50Ω 0 VDD Switching Time Test Circuit 90% Vout Monitor Vin Monitor Rg Switching Time Waveform D.U.T. RL Vin Vout Vin 10 V V DS = 30 V 10% 90% td(on) REJ03G1549-0400 Rev.4.00 Jun 13, 2007 Page 6 of 7 10% tr 10% 90% td(off) tf HAT2244WP Package Dimensions JEITA Package Code − RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.075g 0.8Max 5.1 ± 0.2 Unit: mm 0.5 ± 0.15 Package Name WPAK 4.21Typ 1.27Typ +0.1 -0.2 5.9 3.8 ± 0.2 +0.1 -0.3 6.1 3.9 ± 0.2 0.05Max 0Min Stand-off 1.27Typ 0.2Typ 0.5 ± 0.15 0.635Max 0.7Typ 0.04Min 0.4 ± 0.06 4.9 ± 0.1 (Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Part No. HAT2244WP-EL-E Quantity 2500pcs REJ03G1549-0400 Rev.4.00 Jun 13, 2007 Page 7 of 7 Shipping Container Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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