Renesas HAT2244WP Silicon n channel power mos fet power switching Datasheet

HAT2244WP
Silicon N Channel Power MOS FET
Power Switching
REJ03G1549-0400
Rev.4.00
Jun 13, 2007
Features
•
•
•
•
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 10 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
G
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
REJ03G1549-0400 Rev.4.00 Jun 13, 2007
Page 1 of 7
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-c Note3
Tch
Tstg
Ratings
80
±20
30
120
30
25
83
25
5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
HAT2244WP
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
Min
80
—
—
0.8
—
—
42
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
10
11.5
70
3520
410
160
1.2
60
9.5
9.0
9.5
14.5
56
Max
—
± 0.5
1
2.3
12.5
15.5
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
tf
VDF
trr
—
—
—
9.5
0.83
50
—
1.08
—
ns
V
ns
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery time
Notes: 4. Pulse test
REJ03G1549-0400 Rev.4.00 Jun 13, 2007
Page 2 of 7
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 80 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 15 A, VGS = 10 V Note4
ID = 15 A, VGS = 4.5 V Note4
ID = 15 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 25 V
VGS = 10 V
ID = 30 A
VGS = 10 V, ID = 15 A
VDD ≅ 30 V
RL = 2 Ω
Rg = 4.7 Ω
IF = 30 A, VGS = 0 Note4
IF = 30 A, VGS = 0
diF/ dt = 100 A/ µs
HAT2244WP
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
10 µs
Drain Current ID (A)
Channel Dissipation
Pch (W)
40
30
20
10
0
50
100
150
100
1
0
s
10
µs
Operation in
this area is
1
limited by RDS(on)
PW =
10 ms
DC Operation
Tc=25°C
0.1
Ta = 25°C
0.01 1 shot Pulse
0.1 0.3
1
3 10 30 100 300 1000
200
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
50
3.1 V
VDS = 10 V
Pulse Test
10 V
2.9 V
40
Drain Current ID (A)
Drain Current ID (A)
10
m
30
2.7 V
20
10
VGS = 2.5 V
40
30
Tc = 75°C
20
25°C
10
–25°C
Pulse Test
2
4
6
8
0
10
1
2
3
5
4
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
250
Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
0
Pulse Test
200
150
ID = 10 A
100
5A
50
2A
0
5
10
15
20
Gate to Source Voltage VGS (V)
REJ03G1549-0400 Rev.4.00 Jun 13, 2007
Page 3 of 7
100
Pulse Test
50
20
VGS = 4.5 V
10
10 V
5
2
1
1
10
Drain Current ID (A)
100
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT2244WP
50
Pulse Test
40
30
1 A, 2 A, 5 A
20
VGS = 4.5 V
ID = 1 A, 2 A, 5 A
10
10 V
0
–25
0
25
50
75
100 125 150
Tc = –25°C
25°C
10
75°C
VDS = 10 V
Pulse Test
1
0.1
0.3
3
1
10
30
Drain Current ID (A)
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
100
10000
Capacitance C (pF)
Ciss
50
20
10
0.1
1
1000
Coss
300
100
Crss
VGS = 0
f = 1 MHz
10
10
100
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
20
ID = 30 A
80
16
VDS = 50 V
25 V
10 V
VGS
60
VDS
40
12
8
20
4
VDS = 50 V
25 V
10 V
20
40
60
80
Gate Charge Qg (nc)
REJ03G1549-0400 Rev.4.00 Jun 13, 2007
Page 4 of 7
0
100
1000
Switching Time t (ns)
100
0
3000
30
di/dt = 100 A/µs
VGS = 0, Ta = 25°C
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
100
Case Temperature Tc (°C)
100
Drain to Source Voltage VDS (V)
1000
VGS = 10 V, VDS = 30 V
Rg = 4.7 Ω, duty ≤ 1 %
100
td(off)
tf
10
td(on)
tr
1
0.1
1
10
Drain Current ID (A)
100
HAT2244WP
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IF (A)
50
40
30
10 V
VGS = 0 V, –5 V
20
10
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
100
IAP = 25 A
VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
80
60
40
20
0
25
Source to Drain Voltage VSDF (V)
50
75
100
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25°C
D=1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
θch - c(t) = γs (t) • θch - c
θch - c = 5°C/ W, Tc = 25°C
e
t
ho
1s
ls
pu
PDM
D=
0.001
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
Pulse Width PW (s)
REJ03G1549-0400 Rev.4.00 Jun 13, 2007
Page 5 of 7
150
Channel Temperature Tch (°C)
10
1
125
1
10
HAT2244WP
Avalanche Test Circuit
Avalanche Waveform
EAR =
L
V DS
Monitor
1
2
L • IAP2 •
VDSS
VDSS - V DD
I AP
Monitor
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
Switching Time Test Circuit
90%
Vout
Monitor
Vin Monitor
Rg
Switching Time Waveform
D.U.T.
RL
Vin
Vout
Vin
10 V
V DS
= 30 V
10%
90%
td(on)
REJ03G1549-0400 Rev.4.00 Jun 13, 2007
Page 6 of 7
10%
tr
10%
90%
td(off)
tf
HAT2244WP
Package Dimensions
JEITA Package Code
−
RENESAS Code
PWSN0008DA-A
Previous Code
WPAKV
MASS[Typ.]
0.075g
0.8Max
5.1 ± 0.2
Unit: mm
0.5 ± 0.15
Package Name
WPAK
4.21Typ
1.27Typ
+0.1
-0.2
5.9
3.8 ± 0.2
+0.1
-0.3
6.1
3.9 ± 0.2
0.05Max
0Min
Stand-off
1.27Typ
0.2Typ
0.5 ± 0.15
0.635Max
0.7Typ
0.04Min
0.4 ± 0.06
4.9 ± 0.1
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Ordering Information
Part No.
HAT2244WP-EL-E
Quantity
2500pcs
REJ03G1549-0400 Rev.4.00 Jun 13, 2007
Page 7 of 7
Shipping Container
Taping
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