Seme LAB BUY82 Npn silicon planar epitaxial transistor in hermetically sealed metal case Datasheet

BUY82
NPN SILICON PLANAR EPITAXIAL
TRANSISTOR IN HERMETICALLY
SEALED METAL CASE
MECHANICAL DATA
Dimensions in mm(Inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2.54
(0.100)
2
1
3
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45°
TO39 PACKAGE(TO205AD)
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Maximum Collector to Base Continuous Voltage
150V
VCEO
Maximum Collector to Emitter Continous voltage
60V
VEBO
Maximum Emitter to Base Continouse reverse Voltage
7V
IC
Maximum Continuous Collector Current
10A
IB
Maximum Continuous Base Current
2A
PTOT
Maximum total Power Dissipation up to Tcase = 25°C
30W
Tcase= 100°C
15W
Tamb = 25°C
1W
Tc
Junction Temperature
-65 to +175°C
Tstg
Storage Temperature
150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 3298
Issue 1
BUY82
THERMAL CHARACTERISTICS
Rth j-case
Thermal resistance to case
Max
5.0°C/W
Rth j-amb
Thermal resistance juntion to ambient
Max
150°C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
h21E
VCE(SAT)
Parameter
Test Conditions
Static value of common-emitter
VCE = 5V
IC = 1.5A
40
forward current transfer ratio *
VCE = 5v
IC = 10A
15
IC = 10A
IB = 5V
1.0
IC = 1.5A
IB = 150mA
0.8
IC = 10A
IB = 1.0A
1.8
IC = 1.5A
IB = 150mA
1.2
Collector-Emitter Saturation Voltage*
VBE(SAT)
Base - Emitter Saturation Voltage*
ICBO
Collector - Base Cut-off Current
IEBO
Emitter - Base Cut-off Current
ton
Turn on time
toff
Turn off time
C22b
Output capacitance
C11b
Input capacitance
fT
Transition Frequency
Min.
VCB = 100V IE = 0
Typ.
Max. Unit
—
10
TCase = 150°C
500
VEB = 5V
IC = 0
10
IC = 5A
IB1 = 0.5A
1
IC = 10A
IB1 = 1A
IC = 5A
IB1 = - IB2 =0.5A
1
IC = 10A
IB1 = - IB2 = 1A
1
VCB = 10V
IE =
0
IC =
0
IC =
100mA
1.5
f = 20MHz
µs
pF
850
f =1MHz
VCE = 10V
µA
200
f =1MHz
VEB = 0.5V
V
40
MHz
* Measured under pulse conditions: Pulse length = 300 ms, duty cycle = 1.5%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 3298
Issue 1
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