ON MJE2955T Complementary silicon plastic power transistor Datasheet

MJE2955T (PNP)
MJE3055T (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 VOLTS − 75 WATTS
• DC Current Gain Specified to 10 A
• High Current Gain − Bandwidth Product −
•
http://onsemi.com
fT = 2.0 MHz (Min) @ IC
= 500 mAdc
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
60
Vdc
Collector−Base Voltage
VCB
70
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current
IC
10
Adc
Base Current
IB
6.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
(Note 1)
75
0.6
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to +150
°C
Symbol
Max
Unit
qJC
1.67
°C/W
Collector−Emitter Voltage
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
must be observed.
MJExx55TG
AY WW
MJExx55T = Device Code
xx = 29 or 30
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
January, 2010 − Rev. 9
1
Publication Order Number:
MJE2955T/D
MJE2955T (PNP) MJE3055T (NPN)
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
−
−
700
−
−
1.0
5.0
−
−
1.0
10
−
5.0
20
5.0
100
−
−
−
1.1
8.0
−
1.8
2.0
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
ICEO
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C)
ICEX
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150°C)
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(IC = 4.0 Adc, VCE = 4 0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
Collector−Emitter Saturation Voltage (Note 2)
(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
Base−Emitter On Voltage (Note 2)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
fT
MHz
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 20%.
IC, COLLECTOR CURRENT (AMP)
10
7.0
5.0
5.0 ms
1.0ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150°C. TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) v 150°C. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown. (See AN415A)
100ms
dc
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
TJ = 150°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25°C (D = 0.1)
20
30
7.0
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
50 60
Figure 1. Active−Region Safe Operating Area
http://onsemi.com
2
MJE2955T (PNP) MJE3055T (NPN)
500
90
VCE = 2.0 V
TJ = 150°C
100
25°C
50
-55°C
30
20
10
5.0
0.01
0.02
5.0
0.05 0.1
0.2
0.5 1.0
2.0
IC, COLLECTOR CURRENT (AMP)
80
PD, POWER DISSIPATION (WATTS)
hFE, DC CURRENT GAIN
300
200
70
60
50
MJE3055T
MJE2955T
40
30
20
10
0
10
0
125
50
75
100
TC, CASE TEMPERATURE (°C)
25
Figure 2. DC Current Gain
150
175
5.0
10
Figure 3. Power Derating
MJE2955T
MJE3055T
2.0
1.4
TJ = 25°C
1.2
TJ = 25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 3.0 V
0.4
1.0
0.8
0.6
VBE @ VCE = 2.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
0
0.1
VBE(sat) @ IC/IB = 10
0.2 0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0
0
0.1
10
0.2 0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
ORDERING INFORMATION
Device
MJE2955T
MJE2955TG
MJE3055T
MJE3055TG
Package
Shipping
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
http://onsemi.com
3
50 Units / Rail
MJE2955T (PNP) MJE3055T (NPN)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MJE2955T/D
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