Fairchild FQA11N90-F109 N-channel qfetâ® mosfet 900 v, 11.4 a, 960 mî© Datasheet

FQA11N90_F109
N-Channel QFET® MOSFET
900 V, 11.4 A, 960 mΩ
Features
Description
• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V,
ID = 5.7 A
This N-Channel enhancement mode power MOSFET is
• Low Gate Charge (Typ. 72 nC)
stripe and DMOS technology. This advanced MOSFET
• Low Crss (Typ. 30 pF)
technology has been especially tailored to reduce on-state
• 100% Avalanche Tested
resistance, and to provide superior switching performance and
• RoHS compliant
high avalanche energy strength. These devices are suitable
produced using Fairchild Semiconductor’s proprietary planar
for switched mode power supplies, active power factor
correction (PFC), and electronic lamp ballasts.
D
G
G
D
TO-3PN
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Drain to Source Voltage
Parameter
FQA11N90_F109
900
ID
Drain Current
IDM
Drain Current
VGSS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
- Derate above 25oC
A
7.2
A
A
± 30
V
(Note 2)
1000
mJ
(Note 1)
11.4
A
30
mJ
4.0
V/ns
(Note 3)
PD
11.4
45.6
(Note 1)
(TC = 25oC)
Unit
V
300
W
2.38
W/°C
-55 to +150
°C
300
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case, Max
RθJA
Thermal Resistance, Junction to Ambient, Max
©2006 Fairchild Semiconductor Corporation
FQA11N90_F109 Rev. C1
FQA11N90_F109
1
Unit
0.42
o
C/W
40
o
C/W
www.fairchildsemi.com
FQA11N90_F109 — N-Channel QFET® MOSFET
November 2013
Device Marking
FQA11N90
Device
FQA11N90_F109
Electrical Characteristics
Symbol
Package
TO-3PN
Reel Size
Tube
Tape Width
N/A
Quantity
30 units
TC = 25°C unless otherwise noted.
Parameter
Test Conditions
Min
Typ
Max
Unit
900
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25°C
--
1.0
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
VDS = 900 V, VGS = 0 V
--
--
10
μA
VDS = 720 V, TC = 125°C
--
--
100
μA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
VDS = VGS, ID = 250 μA
3.0
--
5.0
V
VGS = 10 V, ID = 5.7 A
--
0.75
0.96
Ω
VDS = 50 V, ID = 5.7 A
--
12
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
2700
3500
pF
--
260
340
pF
--
30
40
pF
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 450 V, ID = 11.4 A,
RG = 25 Ω
(note 4)
VDS = 720 V, ID = 11.4 A,
VGS = 10 V
(note 4)
--
65
140
ns
--
135
280
ns
--
165
340
ns
--
90
190
ns
--
72
94
nC
--
16
--
nC
--
35
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
11.4
A
ISM
--
--
45.6
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 11.4 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
850
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 11.4 A,
dIF / dt = 100 A/μs
--
11.2
--
μC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 15 mH, IAS = 11.4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 11.4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2006 Fairchild Semiconductor Corporation
FQA11N90_F109 Rev. C1
2
www.fairchildsemi.com
FQA11N90_F109 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
o
25 C
0
10
o
-55 C
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
10
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
2.0
VGS = 10V
1.6
VGS = 20V
1.2
0.8
※ Note : TJ = 25℃
0.4
1
10
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
-1
0
8
16
24
32
10
40
0.2
0.4
0.6
ID, Drain Current [A]
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
4500
Ciss
4000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VGS, Gate-Source Voltage [V]
5000
3500
Capacitance [pF]
25℃
Coss
3000
2500
2000
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
1500
1000
500
VDS = 180V
10
VDS = 450V
VDS = 720V
8
6
4
2
※ Note : ID = 11.4 A
0
-1
10
0
10
0
1
10
Figure 5. Capacitance Characteristics
©2006 Fairchild Semiconductor Corporation
FQA11N90_F109 Rev. C1
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FQA11N90_F109 — N-Channel QFET® MOSFET
Typical Characteristics
(Continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 5.7 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
12
Operation in This Area
is Limited by R DS(on)
ID, Drain Current [A]
10
10
1
10
DC
1 ms
10 ms
100 μs
10 μs
ID, Drain Current [A]
2
0
10
※ Notes :
-1
10
o
1. TC = 25 C
8
6
4
2
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
10
1
2
10
0
25
3
10
10
50
Figure 9. Maximum Safe Operating Area
ZθJC(t), Thermal Response [oC/W]
Zθ JC(t), Thermal Response
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
-1
※ N o te s :
1 . Z θ J C ( t) = 0 . 4 2 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .2
0 .1
PDM
0 .0 5
t1
0 .0 2
10
0 .0 1
-2
t2
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2006 Fairchild Semiconductor Corporation
FQA11N90_F109 Rev. C1
4
www.fairchildsemi.com
FQA11N90_F109 — N-Channel QFET® MOSFET
Typical Characteristics
FQA11N90_F109 — N-Channel QFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
tp
©2006 Fairchild Semiconductor Corporation
FQA11N90_F109 Rev. C1
VDS (t)
VDD
DUT
tp
5
Time
www.fairchildsemi.com
FQA11N90_F109 — N-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2006 Fairchild Semiconductor Corporation
FQA11N90_F109 Rev. C1
6
www.fairchildsemi.com
FQA11N90_F109 — N-Channel QFET® MOSFET
Mechanical Dimensions
TO-3PN 3L
Figure 16. 3LD, T03, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
Dimension in Millimeters
©2006 Fairchild Semiconductor Corporation
FQA11N90_F109 Rev. C1
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2006 Fairchild Semiconductor Corporation
FQA11N90_F109 Rev. C1
8
www.fairchildsemi.com
FQA11N90_F109 — N-Channel QFET® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Sync-Lock™
F-PFS™
®
AX-CAP®*
FRFET®
®*
®
SM
Global Power Resource
PowerTrench
BitSiC™
GreenBridge™
PowerXS™
Build it Now™
TinyBoost®
Programmable Active Droop™
Green FPS™
CorePLUS™
TinyBuck®
®
QFET
Green FPS™ e-Series™
CorePOWER™
TinyCalc™
QS™
Gmax™
CROSSVOLT™
TinyLogic®
Quiet Series™
GTO™
CTL™
TINYOPTO™
RapidConfigure™
IntelliMAX™
Current Transfer Logic™
TinyPower™
ISOPLANAR™
DEUXPEED®
™
TinyPWM™
Dual Cool™
Marking Small Speakers Sound Louder
TinyWire™
Saving our world, 1mW/W/kW at a time™
EcoSPARK®
and Better™
TranSiC™
EfficentMax™
SignalWise™
MegaBuck™
TriFault Detect™
ESBC™
SmartMax™
MICROCOUPLER™
TRUECURRENT®*
SMART START™
MicroFET™
®
μSerDes™
Solutions for Your Success™
MicroPak™
SPM®
MicroPak2™
Fairchild®
STEALTH™
MillerDrive™
Fairchild Semiconductor®
UHC®
SuperFET®
MotionMax™
FACT Quiet Series™
®
Ultra FRFET™
SuperSOT™-3
mWSaver
FACT®
UniFET™
OptoHiT™
SuperSOT™-6
FAST®
VCX™
OPTOLOGIC®
SuperSOT™-8
FastvCore™
VisualMax™
OPTOPLANAR®
SupreMOS®
FETBench™
VoltagePlus™
SyncFET™
FPS™
XS™
Similar pages