BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Features http://onsemi.com • Pb−Free Packages are Available HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage BAS19 BAS20 BAS21 Repetitive Peak Reverse Voltage BAS19 BAS20 BAS21 Continuous Forward Current Peak Forward Surge Current Junction and Storage Temperature Range Power Dissipation (Note 1) Electrostatic Discharge VR VRRM IF Value 120 200 250 Unit SOT−23 Vdc 3 1 CATHODE ANODE SC−88A 5 1 CATHODE ANODE Vdc 120 200 250 4 CATHODE 200 MARKING DIAGRAMS mAdc IFM(surge) 625 mAdc TJ, Tstg −55 to +150 °C PD 385 mW ESD HM < 500 V MM < 400 V 3 ANODE 3 3 Jx M G G 1 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. SOT−23 (TO−236) CASE 318 STYLE 8 1 2 5 4 1 Jx M G G 2 3 3 1 SC−88A (SOT−353) CASE 419A x = P, R, or S P = BAS19LT1 R = BAS20LT1 S = BAS21LT1 or BAS21DW5T1 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon the manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 January, 2007 − Rev. 9 1 Publication Order Number: BAS19LT1/D BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 THERMAL CHARACTERISTICS (SOT−23) Characteristic Total Device Dissipation FR−5 Board (Note 2) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient (SOT−23) Symbol Max Unit PD 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C 417 °C/W −55 to +150 °C Symbol Max Unit PD 385 mW 328 3.0 °C/W mW/°C TJmax 150 °C TJ, Tstg −55 to +150 °C RJA Total Device Dissipation Alumina Substrate (Note 3) TA = 25°C Derate above 25°C PD Thermal Resistance Junction−to−Ambient RJA Junction and Storage Temperature Range TJ, Tstg THERMAL CHARACTERISTICS (SC−88A) Characteristic Power Dissipation (Note 4) Thermal Resistance − Junction−to−Ambient Derate Above 25°C RJA Maximum Junction Temperature Operating Junction and Storage Temperature Range 2. FR−5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Voltage Leakage Current (VR = 100 Vdc) (VR = 150 Vdc) (VR = 200 Vdc) (VR = 100 Vdc, TJ = 150°C) (VR = 150 Vdc, TJ = 150°C) (VR = 200 Vdc, TJ = 150°C) BAS19 BAS20 BAS21 BAS19 BAS20 BAS21 Reverse Breakdown Voltage (IBR = 100 Adc) (IBR = 100 Adc) (IBR = 100 Adc) BAS19 BAS20 BAS21 IR V(BR) Min Max − − − − − − 0.1 0.1 0.1 100 100 100 120 200 250 − − − − − 1.0 1.25 Unit Adc Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr − 50 ns http://onsemi.com 2 Vdc BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 820 +10 V 2.0 k 100 H tr 0.1 F IF tp IF t trr 10% t 0.1 F 90% D.U.T. 50 INPUT SAMPLING OSCILLOSCOPE 50 OUTPUT PULSE GENERATOR VR IR INPUT SIGNAL IR(REC) = 3.0 mA OUTPUT PULSE (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit TA = −55°C 1000 25°C 800 REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) 1200 150°C 600 400 200 1 1 10 100 1000 7000 6000 5000 4000 3000 6 5 4 3 2 1 0 TA = 150°C TA = 25°C TA = −55°C 1 2 5 10 20 50 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage http://onsemi.com 3 100 200 300 BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 ORDERING INFORMATION Device BAS19LT1 BAS19LT1G BAS19LT3 BAS19LT3G BAS20LT1 BAS20LT1G BAS21LT1 BAS21LT1G BAS21LT3 BAS21LT3G BAS21DW5T1 BAS21DW5T1G Package Shipping † SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel SOT−23 10000 / Tape & Reel SOT−23 (Pb−Free) 10000 / Tape & Reel SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel SOT−23 10000 / Tape & Reel SOT−23 (Pb−Free) 10000 / Tape & Reel SC−88A 3000 / Tape & Reel SC−88A (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E 1 c 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 PACKAGE DIMENSIONS SC−88A, SOT−353, SC−70 CASE 419A−02 ISSUE J A G 5 4 −B− S 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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