NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Collector–Emitter Voltage (RBE = 100Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +85°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +85°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 25V, IE = 0 – – 200 µA Emitter Cutoff Current IEBO VEB = 6V, IC = 0 – – 200 µA DC Current Gain hFE VCE = 1.5V, IC = 200mA 50 100 275 Small–Signal Current Gain Resistance fob VCE = 1.5V, IC = 200mA – 0.7 – MHz Base Spreading Resistance rbb VCE = 1.5V, IC = 200mA, f = 6MHz – 15 – Ω .593 (15.08) Dia .290 (7.36) .031 (.792) .039 (1.0) Dia .295 (7.5) .944 (24.0) Base .530 (13.5) .157 (4.0) Dia (2 Places) .315 (8.0) Collector/Case Emitter