SeCoS MMBTA43 Npn plastic encapsulated transistor Datasheet

MMBTA43
0.5A , 200V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-23
High Voltage Application
Telephone Application
Complementary to MMBTA93
A
L
3
3
C B
Top View
1
MARKING
1
K
ABX
2
E
2
D
PACKAGE INFORMATION
F
Package
MPQ
Leader Size
SOT-23
3K
7 inch
Collector
G
REF.
3
A
B
C
D
E
F
1
Base
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
200
200
5
500
350
357
150, -55~150
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
1
hFE(1)
1
hFE(2)
1
hFE(3)
1
VCE(sat)
1
VBE(sat)
fT
Cob
200
200
5
40
40
40
50
-
-
0.5
0.9
4
V
V
V
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector output capacitance
V
V
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCE=10V, IC=10mA
VCE=10V, IC=1mA
VCE=10V, IC=30mA
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCE=20V, IE=10mA, f=100MHz
VCB=20V, IE=0, f=1MHz
Note:
1. Pulse test: pulse width ≦ 300µs, duty cycle ≦ 2.0%.
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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