TI BQ4013Y 128 k x 8 nonvolatile sram (5 v, 3.3 v) Datasheet

bq4013/Y/LY
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SLUS121A – MAY 1999 – REVISED MAY 2007
128 k × 8 NONVOLATILE SRAM (5 V, 3.3 V)
FEATURES
•
•
•
•
•
•
GENERAL DESCRIPTION
Data Retention for at least 10 Years Without
Power
Automatic Write-Protection During
Power-up/Power-down Cycles
Conventional SRAM Operation, Including
Unlimited Write Cycles
Internal Isolation of Battery before Power
Application
5-V or 3.3-V Operation
Industry Standard 32-Pin DIP Pinout
The CMOS bq4013/Y/LY is a nonvolatile
1,048,576-bit static RAM organized as 131,072
words by 8 bits. The integral control circuitry and
lithium energy source provide reliable nonvolatility
coupled with the unlimited write cycles of standard
SRAM.
The control circuitry constantly monitors the single
supply for an out-of-tolerance condition. When VCC
falls out of tolerance, the SRAM is unconditionally
write-protected to prevent an inadvertent write
operation.
At this time the integral energy source is switched on
to sustain the memory until after VCC returns valid.
The bq4013/Y/LY uses extremely low standby
current CMOS SRAMs, coupled with small lithium
coin cells to provide nonvolatility without long
write-cycle times and the write-cycle limitations
associated with EEPROM.
The bq4013/Y/LY requires no external circuitry and is
compatible with the industry-standard 1-Mb SRAM
pinout.
PIN CONNECTIONS
32−Pin DIP Module
(TOP VIEW)
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
32
2
31
3
30
4
29
5
28
6
27
7
26
8
25
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
VCC
A15
NC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1999–2007, Texas Instruments Incorporated
bq4013/Y/LY
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SLUS121A – MAY 1999 – REVISED MAY 2007
DEVICE INFORMATION
Table 1. TERMINAL FUNCTIONS
TERMINAL
NAME
NUMBER
I/O
DESCRIPTION
A0
12
I
A1
11
I
A2
10
I
A3
9
I
A4
8
I
A5
7
I
A6
6
I
A7
5
I
A8
27
I
A9
26
I
A10
23
I
A11
25
I
A12
4
I
A13
28
I
A14
3
I
A15
31
I
A16
2
I
CE
22
I
DQ0
13
I/O
DQ1
14
I/O
DQ2
15
I/O
DQ3
17
I/O
DQ4
18
I/O
DQ5
19
I/O
DQ6
20
I/O
DQ7
21
I/O
1
-
30
-
OE
24
I
Output enable input
VCC
32
I
Supply voltage input
VSS
16
-
Ground
WE
29
I
Write enable input
NC
Address inputs
Chip-enable input
Data input/output
No connect
FUNCTIONAL DESCRIPTION
When power is valid, the bq4013/Y/LY operates as a standard CMOS SRAM. During power-down and power-up
cycles, the bq4013/Y/LY acts as a nonvolatile memory, automatically protecting and preserving the memory
contents.
Power-down/power-up control circuitry constantly monitors the VCC supply for a power-fail-detect threshold VPFD.
The bq4013 monitors for VPFD = 4.62 V typical for use in 5-V systems with 5% supply tolerance. The bq4013Y
monitors for VPFD = 4.37 V typical for use in 5-V systems with 10% supply tolerance. The bq4013LY monitors for
VPFD = 2.90 V (typ) for use in 3.3-V systems.
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When VCC falls below the VPFD threshold, the SRAM automatically write-protects the data. All outputs become
high impedance, and all inputs are treated as don't care. If a valid access is in process at the time of power-fail
detection, the memory cycle continues to completion. If the memory cycle fails to terminate within time tWPT,
write-protection takes place.
As VCC falls past VPFD and approaches VSO, the control circuitry switches to the internal lithium backup supply,
which provides data retention until valid VCC is applied.
When VCC returns to a level above the internal backup cell voltage, the supply is switched back to VCC. After VCC
ramps above the VPFD threshold, write-protection continues for a time tCER (120 ms maximum in 5-V system, 85
ms maximum in 3.3-V system) to allow for processor stabilization. Normal memory operation may resume after
this time.
The internal coin cells used by the bq4013/Y/LY have an extremely long shelf life and provide data retention for
more than 10 years in the absence of system power.
As shipped from TI, the integral lithium cells of the MT-type module are electrically isolated from the memory.
(Self-discharge in this condition is approximately 0.5% per year.) Following the first application of VCC, this
isolation is broken, and the lithium backup provides data retention on subsequent power-downs.
BLOCK DIAGRAM
DIP MODULE
bq4013/Y/LY
MA PACKAGE
OE
A0 - A16
128 k × 8
SRAM
Block
WE
Power
CE
DQ0 - DQ7
CECON
Power-Fail
Control
+
VCC
Lithium
Cell
UDG-06075
TRUTH TABLE
MODE
CE
WE
OE
I/O OPERATION
POWER
Not selected
H
X
X
High-Z
Standby
Output disable
L
H
H
High-Z
Active
Read
L
H
L
DOUT
Active
Write
L
L
X
DIN
Active
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ORDERING INFORMATION
For the most current package and ordering information, see the Package Option Addendum at the end of the datasheet, or see
the TI website at www.ti.com.
SELECTION GUIDE
MAXIMUM
ACCESS
TIME (ns)
DEVICE NUMBER
bq4013MA-85
85
bq4013MA-120
120
bq4013YMA-70
70
bq4013YMA-85
85
bq4013YMA-120
120
bq4013YMA-70N
70
bq4013YMA-85N
85
bq4013LYMA-70N
70
NEGATIVE SUPPLY
TOLERANCE
(%)
NOMINAL INPUT
VOLTAGE
VCC (V)
TEMPERATURE
(°C)
-5
0 to 70
5
-10
-40 to 85
3.3
PART NUMBERING
PRODUCT
LINE
bq40
MEMORY
DENSITY
INPUT
VOLTAGE
(V)
NEGATIVE
SUPPLY
TOLERANCE
PACKAGE
SPEED
(ns)
13
L
Y
MA
70
N
10 = 8 k × 8
Blank = 5
Blank = 5%
MA = DIP
70
Blank = Commercial
11 = 32 k × 8
L= 3.3
Y = 10%
85
( 0 to 70)
13 = 128 k × 8
100
14 = 256 k × 8
120
N = Industrial
15 = 512 k × 8
150
(-40 to 85)
16 = 1024 k × 8
200
17 = 2048 k × 8
4
TEMPERATURE
(°C)
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SLUS121A – MAY 1999 – REVISED MAY 2007
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
VCC
CONDITION
VALUE
bq4013Y
–0.3 to 7.0
bq4013
–0.3 to 7.0
bq4013LY
–0.3 to 6.0
bq4013Y
–0.3 to 7.0
DC voltage applied on VCC relative to VSS
DC voltage applied on any pin excluding
VVT≤ VCC +0.3 V
VCC relative to VSS
VT
bq4013
bq4013LY
TOPR
Operating temperature
TSTG
Storage temperature
TBIAS
Temperature under bias
TSOLDER
Soldering temperature
(1)
UNIT
V
–0.3 to 7.0
V
–0.3 to (VCC + 0.3)
Commercial
0 to 70
Industrial
–40 to 85
Commercial
–10 to 70
Industrial
–40 to 85
Commercial
–10 to 70
Industrial
–40 to 85
For 10 seconds
°C
260
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be limited to the
Recommended DC Operating Conditions detailed in this data sheet. Exposure to conditions beyond the operational limits for extended
periods of time may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (TA = TOPR)
MIN
TYP (1)
MAX
bq4013Y
4.50
5.00
5.50
bq4013
4.75
5.00
5.50
bq4013LY
3.00
3.30
3.60
0
0
0
VCC
Supply voltage
VSS
Supply voltage
VIL
Low-level input voltage
–0.3
0.8
VIH
High-level Input voltage
2.2
VCC + 0.3
(1)
UNIT
V
Typical values indicate operation at TA = 25°C.
DC ELECTRICAL CHARACTERISTICS
TA = TOPR, VCC(min)≤ VCC≤ VCC(max)
PARAMETER
TEST CONDITIONS
MIN
TYP (1)
MAX
ILI
Input leakage current
VIN = VSS to VCC
±1
ILO
Output leakage current
CE = VIH or OE = VIH or WE = VIL
±1
VOH
Output high voltage
IOH = –1.0 mA
VOL
Output low voltage
IOL = 2.1 mA
ISB1
Standby supply current
CE = VIH
ISB2
Standby supply current
CE≥ VCC– 0.2 V, 0V ≤ VIN≤ 0.2 V,
or VIN≥ VCC– 0.2
ICC
Operating supply current
2.4
0.4
bq4013LY
VPFD
Power-fail-detect voltage
VSO
(1)
Supply switch-over voltage
V
2
µA
0.1
1
mA
50
Minimum cycle, duty = 100%,
CE = VIL, II/O = 0 mA
mA
50
bq4013
4.55
4.62
4.75
bq4013Y
4.30
4.37
4.50
bq4013LY
2.85
2.90
2.95
bq4013
µA
1
bq4013
bq4013Y
UNIT
3
bq4013Y
3
bq4013LY
2.9
V
Typical values indicate operation at TA = 25°C, VCC = 5.0 V or VCC = 3.3 V.
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CAPACITANCE (TA = 25°C, f = 1 MHz, VCC = 5.0 V or VCC = 3.3 V)
PARAMETER (1)
TEST CONDITIONS
CI/O
Input/output capacitance
Output voltage = 0 V
CIN
Input capacitance
Input voltage = 0 V
(1)
MIN
TYP
MAX
8
10
Ensured by design. Not production tested.
AC TEST CONDITIONS
TEST CONDITIONS
PARAMETER
Input pulse levels
Input rise and fall times
Input and output timing reference levels
5V
3.3 V
0 V to 3.0 V
0 V to VCC
5 ns
5 ns
1.5 V (unless otherwise specified)
50 %
See Figure 1 and Figure 2
See Figure 3 and Figure 4
Output load (including scope and jig)
+5V
+5V
1.9 kW
DOUT
1.9 kW
DOUT
1 kW
100 pF
1 kW
Figure 1. 5-V Output Load A
Figure 2. 5-V Output Load B
+ 3.3 V
+ 3.3 V
1.2 kW
DOUT
1.2 kW
DOUT
1.4 kW
30 pF
Figure 3. 3.3-V Output Load A
6
5 pF
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5 pF
Figure 4. 3.3-V Output Load B
UNIT
pF
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SLUS121A – MAY 1999 – REVISED MAY 2007
Table 2. READ CYCLE (TA = TOPR, VCC(min)≤ VCC≤ VCC(max))
PARAMETER
-70
TEST CONDITIONS
MIN
-85
MAX
70
MIN
-120
MAX
MIN
tRC
Read cycle time
tAA
Address access time
tACE
Chip enable access time
tOE
Output enable to output valid
tCLZ
Chip enable to output in low Z
5
5
5
tOLZ
Output enable to output in low Z
0
0
0
tCHZ
Chip disable to output in high Z
tOHZ
Output disable to output in high Z
tOH
Output hold from address change
Output load A
Output load B
Output load A
85
MAX
120
70
85
120
70
85
120
35
45
60
ns
0
25
0
35
0
45
0
25
0
25
0
35
10
UNIT
10
10
tRC
Address
tAA
tOH
DOUT
Previous Data Valid
(1)
WE is held high for a read cycle.
(2)
Device is continuously selected: CE = OE = VIL.
Data Valid
Figure 5. Read Cycle No. 1 (Address Access) (1)(2)
tRC
CE
tACE
tCHZ
tCLZ
DOUT
High−Z
High−Z
(1)
WE is held high for a read cycle.
(2)
Device is continuously selected: CE = OE = VIL.
(3)
Address is valid prior to or coincident with CE transition low.
Figure 6. Read Cycle No. 2 (CE Access) (1)(2)(3)
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tRC
Address
tAA
OE
tOHZ
tOE
tOLZ
DOUT
Data Valid
High−Z
High−Z
(1)
WE is held high for a read cycle.
(2)
Device is continuously selected: CE = VIL.
Figure 7. Read Cycle No. 3 (OE Access)
8
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Table 3. WRITE CYCLE (TA = TOPR, VCC(min)≤ VCC≤ VCC(max))
PARAMETER
-70
TEST CONDITIONS
MIN
-85
MAX
MIN
-120
MAX
MIN
tWC
Write cycle time
70
85
120
tCW
Chip enable to end of write
See
(1)
65
75
100
tAW
Address valid to end of write
See
(1)
65
75
100
tAS
Address setup time
Measured from address valid to beginning
of write. (2)
0
0
0
tWP
Write pulse width
Measured from beginning of write to end of
write. (1)
55
65
85
tWR1
Write recovery time (write cycle 1)
Measured from WE going high to end of
write cycle. (3)
5
5
5
tWR2
Write recovery time (write cycle 2)
Measured from CE going high to end of
write cycle.(3)
15
15
15
tDW
Data valid to end of write
Measured to first low-to- high transition of
either CE or WE.
30
35
45
tDH1
Data hold time (write cycle 1)
Measured from WE going high to end of
write cycle. (4)
0
0
0
tDH2
Data hold time (write cycle 2)
Measured from CE going high to end of
write cycle.(4)
0
0
0
tWZ
Write enbled to output in high Z
I/O pins are in output state. (5)
0
tOW
Output active from end of write
(5)
5
(1)
(2)
(3)
(4)
(5)
I/O pins are in output state.
25
0
5
30
0
MAX
UNIT
ns
40
5
A write ends at the earlier transition of CE going high and WE going high.
A write occurs during the overlap of a low CE and a low WE. A write begins at the later transition of CE going low and WE going low.
Either tWR1 or tWR2 must be met.
Either tDH1 or tDH2 must be met.
If CE goes low simultaneously with WE going low or after WE going low, the outputs remain in high-impedance state.
tWC
Address
tAW
tWR1
tCW
CE
tAS
tWP
WE
tDW
tDH1
Data−In Valid
DIN
tWZ
DOUT
tOW
Data Undefined (1)
High−Z
(1)
CE or WE must be high during address transition.
(2)
Because I/O may be active (OE low) during this period, data input signals of opposite polarity to the outputs must not
be applied.
(3)
If OE is high, the I/O pins remain in a state of high impedance.
Figure 8. Write Cycle No. 1 (WE-Controlled)
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tWC
Address
tAW
tAS
tWR2
tCW
CE
tWP
WE
tDW
DIN
tDH2
Data−in Valid
tWZ
DOUT
Data Undefined (1)
High−Z
(1)
CE or WE must be high during address transition.
(2)
Because I/O may be active (OE low) during this period, data input signals of opposite polarity to the outputs must not
be applied.
(3)
If OE is high, the I/O pins remain in a state of high impedance.
(4)
Either tWR1 or tWR2 must be met.
(5)
Either tDH1 or tDH2 must be met.
Figure 9. Write Cycle No. 2 (CE-Controlled)
10
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Table 4. 5-V POWER-DOWN/POWER-UP (TA = TOPR)
PARAMETER
tPF
VCC slew, 4.75 to 4.25 V
tFS
VCC slew, 4.25 to VSO
tPU
VCC slew, VSO to VPFD (max.)
tCER
tWPT
(1)
(2)
µs
µs
0
µs
40
TA =
Write-protect time
Delay after VCC slews down past VPFD before SRAM
is writeprotected.
UNIT
10
25°C (2)
Data-retention time in absence of VCC
MAX
300
Time during which SRAM is write-protected after
VCC passes VPFD on power-up.
Chip enable recovery time
tDR
MIN TYP (1)
TEST CONDITIONS
80
120
10
40
ms
years
100
150
µs
Typical values indicate operation at TA = 25°C, VCC = 5V.
Batteries are disconnected from circuit until after VCC is applied for the first time. tDR is the accumulated time in absence of power
beginning when power is first applied to the device.
tPF
VCC
4.75 V
VPFD
VPFD
4.25 V
VSO
VSO
tFS
tDR
tPU
tCER
tWPT
CE
Figure 10. 5-V Power-Down/Power-Up Timing
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Table 5. 3.3-V POWER-DOWN/POWER-UP (TA = TOPR)
PARAMETER
MIN TYP (1)
TEST CONDITIONS
tF
VCC slew, 3 V to 0 V
300
tR
VCC slew, VSO to VPFD (max)
100
tCER
Chip enable recovery time
Time during which SRAM is write-protected after
VCC passes VPFD on power-up.
10
tDR
Data-retention time in absence of VCC
TA = 25°C (2)
10
(1)
(2)
MAX
µs
85
ms
years
Typical values indicate operation at TA = 25°C, VCC = 3.3 V.
Batteries are disconnected from circuit until after VCC is applied for the first time. Data retention time (tDR) is the accumulated time in
absence of power beginning when power is first applied to the device.
VCC
3.0 V
VPFD(max)
VPFD
VSO
VSO
tR
tDR
tCER
tF
CE
Figure 11. 3.3-V Power-Down/Power-Up Timing
CAUTION:
Negative undershoots below the absolute maximum rating of -0.3 V in
battery-backup mode may affect data integrity.
12
UNIT
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PACKAGE OPTION ADDENDUM
www.ti.com
9-Oct-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
BQ4013LYMA-70N
ACTIVE
DIP MOD
ULE
MA
32
1
Pb-Free
(RoHS)
CU SN
N / A for Pkg Type
BQ4013MA-120
ACTIVE
DIP MOD
ULE
MA
32
1
Pb-Free
(RoHS)
CU SN
N / A for Pkg Type
BQ4013MA-85
ACTIVE
DIP MOD
ULE
MA
32
1
Pb-Free
(RoHS)
CU SN
N / A for Pkg Type
BQ4013YMA-120
ACTIVE
DIP MOD
ULE
MA
32
1
Pb-Free
(RoHS)
CU SN
N / A for Pkg Type
BQ4013YMA-70
ACTIVE
DIP MOD
ULE
MA
32
1
Pb-Free
(RoHS)
CU SN
N / A for Pkg Type
BQ4013YMA-70N
ACTIVE
DIP MOD
ULE
MA
32
1
Pb-Free
(RoHS)
CU SN
N / A for Pkg Type
BQ4013YMA-85
ACTIVE
DIP MOD
ULE
MA
32
1
Pb-Free
(RoHS)
CU SN
N / A for Pkg Type
BQ4013YMA-85N
ACTIVE
DIP MOD
ULE
MA
32
1
Pb-Free
(RoHS)
CU SN
N / A for Pkg Type
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
MECHANICAL DATA
MPDI061 – MAY 2001
MA (R-PDIP-T**)
PLASTIC DUAL-IN-LINE
28 PINS SHOWN
Millimeters
Inches
D
Dimension
Min.
Max.
Min.
Max.
A
0.365
0.375
9.27
A1
0.015
–
0.38
9.53
–
B
0.017
0.023
0.43
0.58
C
0.008
0.013
0.20
0.33
D/12 PIN
0.710
0.740
18.03
18.80
D/28 PIN
1.470
1.500
37.34
38.10
D/32 PIN
1.670
1.700
42.42
43.18
D/40 PIN
2.070
2.100
52.58
53.34
E
0.710
0.740
18.03
18.80
e
G
0.590
0.630
14.99
16.00
0.090
0.110
2.29
2.79
L
0.120
0.150
3.05
3.81
S/12 PIN
0.105
0.130
2.67
3.30
S
0.075
0.110
1.91
2.79
E
A
L
A1
C
B
e
S
G
4201975/A 03/01
NOTES: A. All linear dimensions are in inches (mm).
B. This drawing is subject to change without notice.
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