Formosa FM220-LN Chip schottky barrier diodes - silicon epitaxial planer type Datasheet

Formosa MS
Chip Schottky Barrier Diodes
FM220-LN THRU FM2100-LN
Silicon epitaxial planer type
SMA-LN
Features
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
0.110(2.8)
0.094(2.4)
For surface mounted applications.
0.181(4.6)
0.165(4.2)
Exceeds environmental standards of MIL-S-19500 /
228
0.075(1.9)
0.067(1.7)
Low leakage current.
0.040(1.0) Typ.
0.040 (1.0) Typ.
0.067(1.7)
0.053(1.3)
Mechanical data
Dimensions in inches and (millimeters)
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0017 ounce, 0.057 gram
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
Forward rectified current
See Fig.1
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
25o C
VR = VRRM TA =
Reverse current
MAX.
UNIT
IO
2.0
A
IFSM
50
A
0.5
mA
10
Junction to ambient
Diode junction capacitance
Rq JA
f=1MHz and applied 4vDC reverse voltage
Storage temperature
MARKING
CODE
*1
V RMS
*2
VR
*3
(V)
(V)
(V)
FM220-LN
SK22
20
14
20
FM230-LN
SK23
30
21
30
FM240-LN
SK24
40
28
40
FM250-LN
SK25
50
35
50
FM260-LN
SK26
60
42
60
FM280-LN
SK28
80
56
80
FM2100-LN
S210
100
70
100
VF
*4
160
-55
mA
o
75
CJ
TSTG
V RRM
TYP.
IR
VR = VRRM TA = 125o C
Thermal resistance
SYMBOLS
MIN.
C / w
pF
+150
o
C
Operating
temperature
(V)
(o C)
0.50
-55 to +125
*1 Repetitive peak reverse voltage
0.70
*2 RMS voltage
-55 to +150
0.85
*3 Continuous reverse voltage
*4 Maximum forward voltage
RATING AND CHARACTERISTIC CURVES (FM220-LN THRU FM2100-LN)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
00LN
~F
M2
4
LN
1.0
-L
N
~F
M
21
00
LN
60
0LN
0-
40
~F
M
26
10
N
20
FM
28
2
FM
-L
0
0-
N~
40
0
3.0
0LN
-L
M2
~F
LN
0.4
FM
22
50
0-
0.8
10
FM
25
2
FM
1.2
INSTANTANEOUS FORWARD CURRENT,(A)
1.6
LN
50
2.0
22
FM
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
2.4
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
PEAK FORWARD SURGE CURRENT,(A)
50
.01
40
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
30
8.3ms Single Half
Tj=25 C
Sine Wave
20
JEDEC method
10
FIG.5 - TYPICAL REVERSE
0
CHARACTERISTICS
1
5
50
10
100
100
NUMBER OF CYCLES AT 60Hz
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
700
600
500
400
300
200
10
1.0
Tj=75 C
.1
Tj=25 C
100
0
.01
.05
.1
.5
1
REVERSE VOLTAGE,(V)
5
10
50
100
.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
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