AUIRF2903ZS AUIRF2903ZL AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) typ. max. Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Base part number Package Type AUIRF2903ZL TO-262 AUIRF2903ZS D2-Pak 30V 1.9m ID (Silicon Limited) 2.4m 235A ID (Package Limited) 160A D D S G G D2Pak AUIRF2903ZS G Gate S D TO-262 AUIRF2903ZL D Drain Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 S Source Orderable Part Number AUIRF2903ZL AUIRF2903ZS AUIRF2903ZSTRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 235 ID @ TC = 100°C ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) 166 160 IDM PD @TC = 25°C Pulsed Drain Current Maximum Power Dissipation 1020 231 VGS EAS EAS (tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient Junction-to-Ambient ( PCB Mount, steady state) Units A W 1.54 ± 20 231 820 See Fig.15,16, 12a, 12b W/°C V mJ A mJ -55 to + 175 °C 300 Typ. Max. Units ––– ––– 0.65 62 40 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF2903ZS/ZL Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 30 ––– ––– V VGS = 0V, ID = 250µA ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA ––– 1.9 2.4 m VGS = 10V, ID = 75A 2.0 ––– 4.0 V VDS = VGS, ID = 150µA 120 ––– ––– S VDS = 10V, ID = 75A ––– ––– 20 VDS =30 V, VGS = 0V µA ––– ––– 250 VDS =30V,VGS = 0V,TJ =125°C ––– ––– 200 VGS = 20V nA ––– ––– -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– ––– ––– ––– ––– 160 51 58 24 100 48 37 240 ––– ––– ––– ––– ––– ––– LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– ––– ––– ––– ––– ––– ––– 6320 1980 1100 5930 2010 3050 ––– ––– ––– ––– ––– ––– Min. Typ. Max. Units ––– ––– 160 ––– ––– 1020 ––– ––– ––– ––– 34 29 1.3 51 44 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss Output Capacitance Effective Output Capacitance Coss eff. Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 75A nC VDS = 24V VGS = 10V VDD = 15V ID = 75A ns RG= 3.2 VGS = 10V Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 pF VGS = 0V, VDS = 1.0V ƒ = 1.0MHz VGS = 0V, VDS = 24V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 24V Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 75A,VGS = 0V ns TJ = 25°C ,IF = 75A, VDD = 15V nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Limited by TJmax, starting TJ = 25°C, L = 0.10mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, 100% tested to this value in production. This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90°C Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) All AC and DC test condition based on old Package limitation current = 75A. 2 2015-9-30 AUIRF2903ZS/ZL 1000 1000 ID, Drain-to-Source Current (A) TOP 100 BOTTOM 10 4.5V TOP ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 4.5V 60µs PULSE WIDTH Tj = 175°C 60µs PULSE WIDTH Tj = 25°C 10 1 0.1 1 10 100 0.1 1000 1 10 100 1000 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 1000.0 240 100.0 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ) TJ = 25°C TJ = 175°C 10.0 TJ = 25°C 1.0 VDS = 25V 200 TJ = 175°C 160 120 80 40 VDS = 10V 380µs PULSE WIDTH 60µs PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 0 0 20 40 60 80 100 120 140 160 180 ID, Drain-to-Source Current (A) Fig. 4 Typical Forward Transconductance vs. Drain Current 2015-9-30 AUIRF2903ZS/ZL 12000 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS, Gate-to-Source Voltage (V) 10000 ID= 75A C, Capacitance (pF) Coss = Cds + Cgd 8000 Ciss 6000 4000 Coss 2000 Crss 16 12 8 4 0 0 1 10 0 100 40 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 10000 TJ = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 120 160 200 240 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.0 100.0 80 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 10.0 TJ = 25°C 1.0 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 1msec 100 LIMITED BY PACKAGE 10 1 VGS = 0V 100µsec 10msec DC Tc = 25°C Tj = 175°C Single Pulse 0.1 0.1 0.0 0.4 0.8 1.2 1.6 2.0 VSD, Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 VDS = 24V VDS= 15V 2.4 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 2015-9-30 AUIRF2903ZS/ZL 2.0 Limited By Package 200 ID, Drain Current (A) RDS(on) , Drain-to-Source On Resistance (Normalized) 240 160 120 80 40 ID = 75A VGS = 10V 1.5 1.0 0.5 0 25 50 75 100 125 150 -60 -40 -20 175 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) T C , Case Temperature (°C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-9-30 AUIRF2903ZS/ZL 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 600 ID 26A 42A BOTTOM 75A TOP 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform VGS(th) Gate threshold Voltage (V) 4.5 ID = 1.0A ID = 1.0mA 4.0 ID = 250µA ID = 150µA 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit 6 2015-9-30 AUIRF2903ZS/ZL 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 0.05 0.10 10 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs. Pulse width Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com) EAR , Avalanche Energy (mJ) 160 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 120 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 80 40 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) 175 PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature 7 2015-9-30 AUIRF2903ZS/ZL Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 2015-9-30 AUIRF2903ZS/ZL D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUF2903ZS YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code 9 2015-9-30 AUIRF2903ZS/ZL TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUF2903ZL YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code 10 2015-9-30 AUIRF2903ZS/ZL D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 11 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 2015-9-30 AUIRF2903ZS/ZL Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-262 MSL1 D2-Pak Class M4(+/- 800V)† AEC-Q101-002 Class H2(+/- 4000V)† AEC-Q101-001 Class C5(+/- 2000V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 9/30/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. 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It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 12 2015-9-30