PD -96176
IRF7524D1GPbF
FETKYTM MOSFET & Schottky Diode
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Co-packaged HEXFET® Power
MOSFET and Schottky Diode
P-Channel HEXFET
Low VF Schottky Rectifier
Generation 5 Technology
Micro8TM Footprint
Lead-Free
Halogen-Free
1
8
K
A
2
7
K
S
3
6
D
G
4
5
D
A
VDSS = -20V
RDS(on) = 0.27Ω
Schottky Vf = 0.39V
Top View
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
Micro8
TM
TM
The new Micro8 package, with half the footprint area of the standard SO-8, provides
TM
the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal
device for applications where printed circuit board space is at a premium. The low
TM
profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum
-1.7
-1.4
-14
1.25
0.8
10
± 12
-5.0
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient
Maximum
Units
100
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
ISD ≤ -1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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IRF7524D1GPbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-20
–––
–––
-0.70
1.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.17
0.28
–––
–––
–––
–––
–––
–––
5.4
0.96
2.4
9.1
35
38
43
240
130
64
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
0.27
VGS = -4.5V, ID = -1.2A
Ω
0.40
VGS = -2.7V, ID = -0.60A
–––
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -0.60A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 125°C
-100
VGS = -12V
nA
100
VGS = 12V
8.2
ID = -1.2A
1.4
nC VDS = -16V
3.6
VGS = -4.5V, See Fig. 6
–––
VDD = -10V
–––
ID = -1.2A
ns
–––
RG = 6.0Ω
–––
RD = 8.3Ω,
–––
VGS = 0V
–––
pF
VDS = -15V
–––
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
52
63
Max. Units
Conditions
-1.25
A
-9.6
-1.2
V
TJ = 25°C, IS = -1.2A, VGS = 0V
78
ns
TJ = 25°C, IF = -1.2A
95
nC di/dt = 100A/µs
Schottky Diode Maximum Ratings
IF(av)
I SM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
1.9
A
1.4
120
11
A
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
TA = 70°C
See Fig.14
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
VFM
Parameter
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
Max. Units
0.50
0.62
V
0.39
0.57
0.02
mA
8
92
pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 20V
TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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IRF7524D1GPbF
Power Mosfet Characteristics
10
10
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
1
0.1
-1.50V
0.01
0.1
20µs PULSE WIDTH
TJ = 25 °C
1
1
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
1
0.1
VDS = -10V
20µs PULSE WIDTH
2.5
3.0
3.5
4.0
4.5
5.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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1
10
Fig 2. Typical Output Characteristics
10
2.0
20µs PULSE WIDTH
TJ = 150 °C
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.01
-1.50V
0.1
0.01
0.1
10
-VDS , Drain-to-Source Voltage (V)
1.5
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
TOP
A
I D = -1.2A
1.5
1.0
0.5
V GS = -4.5V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7524D1GPbF
Power Mosfet Characteristics
500
-VGS , Gate-to-Source Voltage (V)
400
C, Capacitance (pF)
10
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
300
Coss
200
Crss
100
0
1
10
100
A
I D = -1.2A
VDS = -16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
-VDS , Drain-to-Source Voltage (V)
4
6
8
10
A
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
TJ = 150°C
-I D , Drain Current (A)
-ISD , Reverse Drain Current (A)
2
1
TJ = 25°C
0.1
10
100µs
1ms
1
10ms
VGS = 0V
0.01
0.4
0.6
0.8
1.0
-VSD , Source-to-Drain Voltage (V)
4
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.2
TA = 25°C
TJ = 150°C
Single Pulse
0.1
1
A
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7524D1GPbF
Power Mosfet Characteristics
Thermal Response (Z thJC )
1000
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
0.01
t1
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
1.0
0.8
0.6
VGS = -2.5V
0.4
VGS = -5.0V
0.2
0.0
0.0
0.5
1.0
1.5
2.0
-ID , Drain Current (A)
Fig 10. Typical On-Resistance Vs. Drain
Current
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R DS
, Drain-to-Source
RDS
(on)
, Drain-to-SourceOn
OnResistance
Resistance (Ω)
(on)
R DS
, Drain-to-Source
RDS(on)
(on)
, Drain-to-SourceOn
OnResistance
Resistance (Ω)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.300
0.250
ID = -1.7A
0.200
0.150
0.100
2
3
4
5
6
7
8
-VGS , Gate-to-Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5
IRF7524D1GPbF
Schottky Diode Characteristics
100
Reverse Current - IR (mA)
10
J 1
0.1
0.01
0.001
0.0001
)
0
4
8
12
16
20
R 1
TJ = 150°C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
TJ = 125°C
TJ = 25°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage
Voltage Drop
(V) (V)
Forward
Drop--VVFFM
Fig. 12 -Typical Forward Voltage Drop
Characteristics
Allowable Ambient Temperature - (°C)
Instantaneous Forward Current - IF (A)
10
160
V r = 20V
R thJA = 100°C/W
Square wave
140
120
100
80
60
40
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
DC
20
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Average Forward Current - I F(AV) (A)
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7524D1GPbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
Micro8 Part Marking
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRF7524D1GPbF
Micro8TM Tape & Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2008
8
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