Sidac The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops below the minimum holding current of the device. Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Glass passivated junctions High voltage lcmp ignitors High-voltage lamp ignitors Natural gas ignitors Gas oil ignitors High-voltage power supplies Xenon ignitors Over voltage protector Pulse generators Fluorescent lighting ignitors HID lighting ignitors Symbol Parameter Value Units I TSM Maximum surge on-state current non-repetitive one cycle peak value（50Hz） 8 A diT/dt Critical rate-of-rise of on-state current 50 A On-state RMS Current 1 A Storage temperature range -40 to +125 ºC Operating junction temperature range -40 to +125 ºC IT T Stg Tj Revision December 18, 2013 1/4 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Sidac Part Number K0900SD1 K1050SD1 K1200SD1 K1300SD1 K1400SD1 K1500SD1 K1800SD1 K2000SD1 K2200SD1 K2400SD1 K2600SD1 Symbol V DRM @ I DRM V uA Min Max 70 1 90 1 100 1 110 1 120 1 130 1 160 1 180 1 190 1 200 1 220 1 V BO V Min Max 80 97 95 113 110 125 120 138 130 146 140 170 170 195 190 215 205 230 220 250 240 270 I BO uA Max 50 50 50 50 50 50 50 50 50 50 50 V T @ I T =1A V Max 2 2 2 2 2 2 2 2 2 2 2 RS kΩ Min 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 IH mA Min 10 10 10 10 10 10 10 10 10 10 10 Body Marking K09S K10S K12S K13S K14S K15S K18S K20S K22S K24S K26S Parameter VDRM Peak off-state voltage IDRM Off-state current VS Switching voltage IS Switching current RS Switching resistance VT On-state voltage IH Holding current VBO Break over Voltage IBO Break over current Revision December 18, 2013 V-I Curve 2/4 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Sidac Reflow Condition TP Ramp-up Critical Zone TL to TP Pre Heat Lead–free assembly -Temperature Min (Ts(min)) +150°C -Temperature Max (Ts(max)) +200°C -Time (min to max) (ts) 60 -180 Seconds TL Temperature TS(max) Ramp-down Average ramp up rate ( Liquidus Temp TL) to peak 3°C/Second Max TS(max) to TL - Ramp-up Rate 3°C/Second Max TS(min) Preheat 25 Time to peak temperature (t 25℃ to peak) - Temperature (TL) (Liquidus) +217°C - Time (min to max) (ts) 60 -150 Seconds Reflow Time Peak Temperature (TP) 260 +0/-5°C Time within 5°C of actual peak Temperature (tp) 8-15 Seconds Ramp-down Rate 6°C/Second Max Time 25°C to peak Temperature (TP) 8 minutes Max Do not exceed +260°C Part Number REEL DIAMETERS (mm) REEL(PCS) PER CARTON (PCS) SOD-123FL 178 3000 96000 Revision December 18, 2013 3/4 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Sidac θ E Dimensions A1 A L Ref. H Inches Min. Max. Min. Max. A 0.90 1.20 0.035 0.047 A1 0 0.10 0 0.004 b 0.70 1.10 0.028 0.043 c 0.10 0.20 0.004 0.008 D 1.50 1.80 0.059 0.071 E 2.50 2.90 0.098 0.114 F 2.36 - 0.093 - G 4.19 - 0.165 - H 3.40 3.80 0.134 0.150 L 0.55 0.95 0.022 0.037 θ 0 8° 0 8° c θ Millimeters G F SOD-123FL Revision December 18, 2013 4/4 @ UN Semiconductor Co., Ltd. 2013 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.