Schottky Barrier Diodes (SBD) MA6S718 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 2.0 ± 0.1 0.65 0.65 ■ Features 6 2 5 3 4 0.7 ± 0.1 0.2 ± 0.05 • Small S-mini type 6-pin package • Non connected three elements incorporated in one package, allowing high-density mounting • Flat lead type package, resulting in promotion of the actual mounting ratio and solderability with a high-speed mounter • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V Peak forward current* IFM 150 mA Forward current (DC)* IF 30 mA Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1 : Anode 1 4 : Cathode 3 2 : Anode 2 5 : Cathode 2 3 : Anode 3 6 : Cathode 1 S-Mini Type Package (6-pin) Marking Symbol: M2N Internal Connection Note) * : Value in per diode 1 6 2 5 3 4 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 30 V 1 µA Forward voltage (DC) VF1 IF = 1 mA 0.4 V VF2 IF = 30 mA Terminal capacitance Ct VR = 1 V, f = 1 MHz 1 Reverse recovery time* trr Detection efficiency η V 1.5 pF IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1 ns Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Applicaiton Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω 1