APT55M85JFLL
550V
POWER MOS 7
R
0.085Ω
51A
FREDFET
FREDFET
S
S
27
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SO
"UL Recognized"
ISOTOP ®
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
2
T-
D
G
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT55M85JFLL
UNIT
550
Volts
Drain-Source Voltage
51
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
521
Watts
Linear Derating Factor
4.17
W/°C
VGSM
PD
TJ,TSTG
204
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
51
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
550
Volts
51
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 25.5A)
TYP
MAX
0.085
Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
3-2003
BVDSS
Characteristic / Test Conditions
050-7233 Rev A
Symbol
APT55M85JFLL
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
6590
Coss
Output Capacitance
VDS = 25V
1296
Crss
Reverse Transfer Capacitance
f = 1 MHz
91
VGS = 10V
157
VDD = 275V
ID = 59A @ 25°C
38
86
Turn-on Delay Time
VGS = 15V
19
Rise Time
VDD = 275V
14
ID = 59A @ 25°C
41
RG = 0.6Ω
6
Qg
Total Gate Charge
3
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
t d(on)
tr
t d(off)
Turn-off Delay Time
tf
Fall Time
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
51
Continuous Source Current (Body Diode)
IS
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
dt
Peak Diode Recovery
dv/
MAX
UNIT
Amps
(Body Diode)
204
(VGS = 0V, IS = -51A)
1.3
Volts
15
V/ns
dt
5
t rr
Reverse Recovery Time
(IS = -51A, di/dt = 100A/µs)
Tj = 25°C
270
Tj = 125°C
540
Q rr
Reverse Recovery Charge
(IS = -51A, di/dt = 100A/µs)
Tj = 25°C
1.8
Tj = 125°C
6.2
IRRM
Peak Recovery Current
(IS = -51A, di/dt = 100A/µs)
Tj = 25°C
16
Tj = 125°C
29
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
UNIT
0.24
40
1 Repetitive Rating: Pulse width limited by maximum junction
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 2.31mH, R = 25Ω, Peak I = 51A
temperature.
j
G
L
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
5 dv/ numbers reflect the limitations of the test circuit rather than the
dt
device itself. IS ≤ -51A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.20
0.7
0.15
0.5
Note:
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7233 Rev A
3-2003
0.25
0.3
t1
t2
0.05
0.1
0
SINGLE PULSE
0.05
10-5
10-4
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT55M85JFLL
160
VGS=15 &10V
0.0528
Power
(Watts)
0.0203F
0.0651
0.173F
0.123
0.490F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. ( ”C)
7.5V
120
7V
80
6.5V
40
6V
5.5V
Case temperature
5V
0
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
100
TJ = -55°C
80
60
40
TJ = +125°C
20
TJ = +25°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.13
1.12
1.10
VGS=10V
VGS=20V
1.00
0.90
0.80
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
D
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.00
0.95
0.90
0.85
-50
= 29.5A
GS
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
1.05
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
V
1.10
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
3-2003
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO
= 10V @ 29.5A
GS
1.15
60
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
V
050-7233 Rev A
ID, DRAIN CURRENT (AMPERES)
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.14
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
10,000
OPERATION HERE
LIMITED BY RDS (ON)
100
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 59A
14
VDS=110V
12
10
100
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
16
D
Coss
1,000
10
1
5 10
50 100
550
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
Ciss
10mS
1
VDS=275V
VDS=440V
8
6
4
2
0
APT55M85JFLL
20,000
204
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
050-7233 Rev A
3-2003
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.