NRVTSM245E Surface Mount Trench Schottky Power Rectifier POWERMITE® Power Surface Mount Package www.onsemi.com Features • • • • • • • • • • • Low Profile − Maximum Height of 1.1 mm Small Footprint − Footprint Area of 8.45 mm2 Supplied in 12 mm Tape and Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices SCHOTTKY TRENCH RECTIFIER 2.0 AMPERES, 45 VOLTS CATHODE ANODE POWERMITE CASE 457 MARKING DIAGRAM 1 Typical Applications • • • • • Switching Power Supplies including Adapters & Flat Panel Displays High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation Mechanical Characteristics: • • • • • Powermite is JEDEC Registered as D0−216AA Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 16.3 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds M E24 G M E24G 2 = Date Code = Device Code = Pb−Free Package (Marking Style 1) ORDERING INFORMATION Package Shipping† NRVTSM245ET1G Powermite (Pb−Free) 3000 / Tape & Reel NRVTSM245ET3G Powermite (Pb−Free) 12000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 March, 2015 − Rev. 0 1 Publication Order Number: NRVTSM245E/D NRVTSM245E MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 45 V Average Rectified Forward Current (TL = 168°C) IO 2.0 A Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 167°C) IFRM 4.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A Tstg, TJ −65 to +175 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Storage and Operating Junction Temperature Range (Note 1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 6.3 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 82 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 200 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic VF Maximum Instantaneous Forward Voltage (Note 4) (IF = 2 A, TJ = 25°C) V 0.65 0.58 (IF = 2 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR 75 3 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NRVTSM245E TYPICAL CHARACTERISTICS 100 iF, INSTANTANEOUS FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175°C 10 TA = 150°C TA = 125°C TA = 90°C 1 TA = 25°C TA = −55°C 0.1 TA = 125°C TA = 90°C 1 TA = 25°C 0.5 0.7 0.9 1.1 TA = −55°C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.8 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E−02 1.E−01 TA = 175°C TA = 150°C 1.E−03 TA = 175°C TA = 150°C 1.E−02 TA = 125°C 1.E−04 IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0.3 TA = 175°C 10 0.1 0.1 TA = 90°C TA = 125°C 1.E−03 1.E−05 TA = 25°C TA = 90°C 1.E−04 1.E−06 1.E−07 TA = 25°C 1.E−05 5 15 25 35 45 5 15 25 35 45 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 4 1000 TJ = 25°C IF(AV), AVERAGE FORWARD CURRENT (A) C, JUNCTION CAPACITANCE (pF) TA = 150°C 100 DC 3 Square Wave 2 1 RqJL = 6.3°C/W 0 10 0.1 1 10 10 30 50 70 90 110 130 VR, REVERSE VOLTAGE (V) TC, LEAD TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating www.onsemi.com 3 150 170 NRVTSM245E TYPICAL CHARACTERISTICS 4 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IPK/IAV = 10 3 IPK/IAV = 20 IPK/IAV = 5 2 DC 1 Square Wave 0 0 0.5 1.0 1.5 2.0 2.5 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 100 50% 20% 10 10% 5% 2% 1 1% 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (sec) Figure 8. Thermal Response, Junction−to−Ambient www.onsemi.com 4 10 100 1000 NRVTSM245E PACKAGE DIMENSIONS POWERMITE CASE 457−04 ISSUE F F 0.08 (0.003) C −A− J M T B S C S S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. DIM A B C D F H J K L R S PIN 1 −B− K PIN 2 R L J MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 -0.05 +0.10 -0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF D H −T− 0.08 (0.003) M T B S C S SOLDERING FOOTPRINT* 0.635 0.025 2.67 0.105 0.762 0.030 2.54 0.100 1.27 0.050 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NRVTSM245E/D