Rohm DTA124TM -100ma / -50v digital transistors (with built-in resistors) Datasheet

-100mA / -50V Digital transistors
(with built-in resistors)
DTA124TM / DTA124TE / DTA124TUA / DTA124TKA
 Applications
Inverter, Interface, Driver
 Features
1)Built-in circuit enables the configuration of an inverter circuit without connecting external input resistors. (see
equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3)Only the on / off conditions need to be set for operation, making the device design easy.
 Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
 Dimensions (Unit : mm)
0.7
1.6
DTA124TE
0.55
0.3
0.2
(3)
0.8
1.2
0.8
(3)
(2)
0.2
(1)(2)
0.4 0.4
0.13
(1) Base
(2) Emitter
(3) Collector
0.5
0.8
(1)
0.2
ROHM : EMT3
0.2
0.15
0.5 0.5
1.0
Abbreviated symbol : 95
DTA124TUA
2.0
Abbreviated symbol : 95
0.9
0.2
0.3
2.9
DTA124TKA
1.1
0.4
0.7
0.8
(3)
1.6
2.8
2.1
1.25
(3)
(1)
0.65 0.65
0.15
1.3
0.1Min.
(2)
(1) Emitter
(2) Base
(3) Collector
( 2)
(1) Emitter
(2) Base
(3) Collector
(1)
0.95 0.95
0.15
1.9
ROHM : UMT3
EIAJ : SC-70
Each lead has same dimensions
Abbreviated symbol : 95
ROHM : SMT3
EIAJ : SC-59
0.3Min.
0.22
ROHM : VMT3
0.1Min.
1.2
0.32
1.6
DTA124TM
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : 95
 Inner circuit
C
B
R1
E
B : Base
C : Collector
E : Emitter
R1=22kΩ
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.06 - Rev.B
DTA124TM / DTA124TE / DTA124TUA / DTA124TKA
Data Sheet
 Packaging specifications
Part No.
Package
VMT3 EMT3
Package type
Taping Taping Taping Taping
UMT3 SMT3
Code
T2L
TL
T106
T146
Basic ordering
unit (pieces)
8000
3000
3000
3000
−
−
−
−
−
DTA124TM
DTA124TE
−
DTA124TUA
−
−
DTA124TKA
−
−
−
−
 Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
Unit
DTA124TM DTA124TE DTA124TUA DTA124TKA
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
Collector power dissipation
PC
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
150
200
mW
 Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−50
−
−
V
IC=−50μA
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC=−1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE=−50μA
Collector cutoff current
ICBO
−
−
−0.5
μA
VCB=−50V
Emitter cutoff current
IEBO
−
−
−0.5
μA
VEB=−4V
VCE(sat)
−
−
−0.3
V
IC/IB=−5mA/−0.5mA
VCE=−5V, IC=−1mA
Parameter
Collector-emitter saturation voltage
DC current transfer ratio
hFE
100
250
600
−
Input resistance
R1
15.4
22
28.6
kΩ
Transition frequency
fT ∗
−
250
−
MHz
Conditions
−
VCE=−10V, IE=5mA, f=100MHz
∗ Characteristics of built-in transistor
1k
VCE=−5V
DC CURRENT GAIN : hFE
500
200
100
50
Ta=100°C
25°C
−40°C
20
10
5
2
1
-100μ -200μ -500μ -1m -2m
-5m -10m -20m
-50m -100m
COLLECTOR URRENT : IC (A)
Fig.1 DC current gain vs. collector current
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c 2009 ROHM Co., Ltd. All rights reserved.
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COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
 Electrical characteristic curves
-1
IC/IB=10
-500m
-200m
-100m
-50m
-20m
-10m
Ta=100°C
25°C
−40°C
-5m
-2m
-1m
-10μ -20μ -50μ -100μ -200μ -500μ -1m -2m -5m -10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
2/2
2009.06 - Rev.B
Notice
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