To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS30UM-3 HIGH-SPEED SWITCHING USE FS30UM-3 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. D 0.8 2.54 2.54 0.5 2.6 4.5MAX. 12.5MIN. f 3.6 q w e wr ¡10V DRIVE ¡VDSS ................................................................................ 150V ¡rDS (ON) (MAX) .............................................................. 92mΩ ¡ID ......................................................................................... 30A ¡Integrated Fast Recovery Diode (TYP.) ........... 110ns q GATE w DRAIN e SOURCE r DRAIN q e TO-220 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 150 V VGSS ID Gate-source voltage Drain current VDS = 0V ±20 30 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 120 30 A A IS ISM Source current Source current (Pulsed) 30 120 A A PD T ch Maximum power dissipation Channel temperature 70 –55 ~ +150 W °C –55 ~ +150 °C g T stg — Parameter Conditions L = 100µH Storage temperature Weight Typical value 2.0 Feb.1999 MITSUBISHI Nch POWER MOSFET FS30UM-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance VDS (ON) y fs Drain-source on-state voltage Forward transfer admittance Ciss Coss Input capacitance Output capacitance Crss td (on) Reverse transfer capacitance Turn-on delay time tr td (off) Rise time Turn-off delay time tf Fall time VSD Rth (ch-c) Source-drain voltage Thermal resistance trr Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 150V, V GS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V Unit Min. Typ. Max. 150 — — — — ±0.1 V µA — 2.0 — 3.0 0.1 4.0 mA V — 68 92 mΩ ID = 15A, VDS = 10V — — 1.02 29 1.38 — V S VDS = 10V, VGS = 0V, f = 1MHz — — 2300 320 — — pF pF — — 130 35 — — pF ns — — 58 110 — — ns ns ID = 15A, VGS = 10V VDD = 80V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = –100A/µs — 65 — ns — — 1.0 — 1.5 1.78 — 110 — V °C/W ns PERFORMANCE CURVES DRAIN CURRENT ID (A) 80 60 40 20 0 0 50 100 150 tw = 10ms 101 7 5 3 2 100ms 1ms 100 10ms 100ms DC 3 5 7101 2 3 5 7 102 2 3 5 7 103 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 10V 7V 20 7V 6V 6V VGS = 20V PD = 70W 40 7 5 3 2 7 5 3 200 TC = 25°C Single Pulse 102 CASE TEMPERATURE TC (°C) 50 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 30 20 5V 10 TC = 25°C Pulse Test 16 5V 12 8 4 TC = 25°C Pulse Test 0 0 1 2 3 4 DRAIN-SOURCE VOLTAGE VDS (V) 4V 5 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30UM-3 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) TC = 25°C Pulse Test 4 ID = 50A 3 2 30A 1 10A 0 0 4 8 12 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) 10 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 102 VDS = 10V 7 Pulse Test 5 4 3 2 TC = 25°C 75°C 125°C 101 7 5 4 3 2 0 4 8 12 16 100 0 10 20 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 2 Ciss Coss Crss 102 7 Tch = 25°C 5 f = 1MHZ 3 VGS = 0V 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) 104 CAPACITANCE Ciss, Coss, Crss (pF) 20 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 20 103 7 5 3 2 40 TRANSFER CHARACTERISTICS (TYPICAL) 30 7 5 3 2 VGS = 10V 20V 60 DRAIN CURRENT ID (A) 40 0 80 0 20 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 50 DRAIN CURRENT ID (A) 16 100 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 4 3 Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50Ω 2 td(off) 102 7 5 4 3 tf tr td(on) 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30UM-3 HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 50V 12 80V 100V 8 4 0 20 40 60 80 75°C 25°C 20 10 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 2 100 7 5 4 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 TC = 125°C 30 GATE CHARGE Qg (nC) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 40 0 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) 50 Tch = 25°C ID = 30A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 D = 1.0 2 100 0.5 7 0.2 PDM 5 3 0.1 tw 2 0.05 T 10–1 0.02 7 D= tw 5 0.01 T 3 Single Pulse 2 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999