® BUF634 BUF 634 BUF 634 BUF 634 BUF6 34 250mA HIGH-SPEED BUFFER FEATURES APPLICATIONS ● HIGH OUTPUT CURRENT: 250mA ● VALVE DRIVER ● SOLENOID DRIVER ● OP AMP CURRENT BOOSTER ● SLEW RATE: 2000V/µs ● PIN-SELECTED BANDWIDTH: 30MHz to 180MHz ● LINE DRIVER ● HEADPHONE DRIVER ● VIDEO DRIVER ● LOW QUIESCENT CURRENT: 1.5mA (30MHz BW) ● WIDE SUPPLY RANGE: ±2.25 to ±18V ● INTERNAL CURRENT LIMIT ● THERMAL SHUTDOWN PROTECTION ● MOTOR DRIVER ● TEST EQUIPMENT ● ATE PIN DRIVER ● 8-PIN DIP, SO-8, 5-LEAD TO-220, 5-LEAD DDPAK SURFACE-MOUNT DESCRIPTION The BUF634 is a high speed unity-gain open-loop buffer recommended for a wide range of applications. It can be used inside the feedback loop of op amps to increase output current, eliminate thermal feedback and improve capacitive load drive. For low power applications, the BUF634 operates on 1.5mA quiescent current with 250mA output, 2000V/µs slew rate and 30MHz bandwidth. Bandwidth can be adjusted from 30MHz to 180MHz by connecting a resistor between V– and the BW Pin. Output circuitry is fully protected by internal current limit and thermal shut-down making it rugged and easy to use. The BUF634 is available in a variety of packages to suit mechanical and power dissipation requirements. Types include 8-pin DIP, SO-8 surface-mount, 5-lead TO-220, and a 5-lead DDPAK surface-mount plastic power package. 5-Lead TO-220 5-Lead DDPAK Surface Mount G=1 1 2 3 4 5 G=1 1 2 3 4 5 8-Pin DIP Package SO-8 Surface-Mount Package BW 1 8 NC NC 2 7 V+ VIN 3 6 VO V– 4 G=1 5 BW V– V+ VIN VO BW V– V+ VIN VO NC NOTE: Tabs are connected to V– supply. International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111 Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 © SBOS030 1993 Burr-Brown Corporation PDS-1206C Printed in U.S.A. June, 1996 SPECIFICATIONS ELECTRICAL At TA = +25°C(1), VS = ±15V, unless otherwise noted. BUF634P, U, T, F LOW QUIESCENT CURRENT MODE PARAMETER CONDITION INPUT Offset Voltage vs Temperature vs Power Supply Input Bias Current Input Impedance Noise Voltage MIN Specified Temperature Range VS = ±2.25V(2) to ±18V VIN = 0V RL = 100Ω f = 10kHz GAIN OUTPUT Current Output, Continuous Voltage Output, Positive Negative Positive Negative Positive Negative Slew Rate Settling Time, 0.1% 1% Differential Gain Differential Phase MAX ±30 ±100 0.1 ±0.5 80 || 8 4 ±100 MAX UNITS ✻ ✻ ✻ ±5 8 || 8 ✻ ✻ mV µV/°C mV/V µA MΩ || pF nV/√Hz ✻ ±20 0.99 0.93 0.9 ✻ ✻ ✻ ✻ ✻ ✻ V/V V/V V/V IO = 10mA IO = –10mA IO = 100mA IO = –100mA IO = 150mA IO = –150mA (V+) –2.1 (V–) +2.1 (V+) –3 (V–) +4 (V+) –4 (V–) +5 ±250 (V+) –1.7 (V–) +1.8 (V+) –2.4 (V– ) +3.5 (V+) –2.8 (V–) +4 ✻ ✻ ✻ ✻ ✻ ✻ ✻ ✻ ✻ ✻ ✻ ✻ ✻ mA V V V V V V RL = 1kΩ RL = 100Ω 20Vp-p, RL = 100Ω 20V Step, RL = 100Ω 20V Step, RL = 100Ω 3.58MHz, VO = 0.7V, RL = 150Ω 3.58MHz, VO = 0.7V, RL = 150Ω TEMPERATURE RANGE Specification Operating Storage Thermal Shutdown Temperature, TJ Thermal Resistance, θJA θJA θJA θJC θJA θJC 1 ±2 TYP 0.95 0.85 0.8 ±350 POWER SUPPLY Specified Operating Voltage Operating Voltage Range Quiescent Current, IQ WIDE BANDWIDTH MODE MIN RL = 1kΩ, VO = ±10V RL = 100Ω, VO = ±10V RL = 67Ω, VO = ±10V Short-Circuit Current DYNAMIC RESPONSE Bandwidth, –3dB TYP ±550 ±400 30 20 2000 200 50 4 2.5 ±15 ±2.25(2) ±1.5 IO = 0 –40 –40 –55 “P” Package(3) “U” Package (3) “T” Package(3) “T” Package “F” Package(3) “F” Package 180 160 ✻ ✻ ✻ 0.4 0.1 ✻ +85 +125 +125 ✻ ✻ ✻ ±15 ✻ ✻ ✻ ✻ ✻ ✻ ✻ V+ V+ VO mA MHz MHz V/µs ns ns % ° ✻ ±18 ±2 175 100 150 65 6 65 6 VIN ✻ ✻ ±20 V V mA ✻ ✻ ✻ °C °C °C °C °C/W °C/W °C/W °C/W °C/W °C/W VIN VO BW V– V– ✻ Specifications the same as Low Quiescent Mode. NOTES: (1) Tests are performed on high speed automatic test equipment, at approximately 25°C junction temperature. The power dissipation of this product will cause some parameters to shift when warmed up. See typical performance curves for over-temperature performance. (2) Limited output swing available at low supply voltage. See Output voltage specifications. (3) Typical when all leads are soldered to a circuit board. See text for recommendations. The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems. ® BUF634 2 PIN CONFIGURATION Top View 8-Pin Dip Package SO-8 Surface-Mount Package Top View 5-Lead TO-220 BW 1 8 NC NC 2 7 V+ VIN 3 6 VO V– 4 5 NC G=1 5-Lead DDPAK Surface Mount G=1 1 2 3 4 5 G=1 1 2 3 4 5 NC = No Connection BW V– V+ VIN VO ABSOLUTE MAXIMUM RATINGS Supply Voltage ..................................................................................... ±18V Input Voltage Range ............................................................................... ±VS Output Short-Circuit (to ground) ................................................. Continuous Operating Temperature ..................................................... –40°C to +125°C Storage Temperature ........................................................ –55°C to +125°C Junction Temperature ....................................................................... +150°C Lead Temperature (soldering,10s) .................................................... +300°C BW V– V+ VIN VO ELECTROSTATIC DISCHARGE SENSITIVITY PACKAGE/ORDERING INFORMATION PRODUCT PACKAGE PACKAGE DRAWING NUMBER(1) BUF634P BUF634U BUF634T BUF634F 8-Pin Plastic DIP SO-8 Surface-Mount 5-Lead TO-220 5-Lead DDPAK 006 182 315 325 TEMPERATURE RANGE –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C NOTE: Tab electrically connected to V–. Any integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet published specifications. NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. ® 3 BUF634 TYPICAL PERFORMANCE CURVES At TA = +25°C, VS = ±15V, unless otherwise noted. GAIN and PHASE vs FREQUENCY vs TEMPERATURE –5 –10 0 Low IQ –40 Phase (°) –30 –15 –20 TJ = –40°C TJ = 25°C TJ = 125°C Low IQ –30 –50 10M 100M Frequency (Hz) 1G 1M GAIN and PHASE vs FREQUENCY vs SOURCE RESISTANCE 10M 100M Frequency (Hz) 1G GAIN and PHASE vs FREQUENCY vs LOAD RESISTANCE 0 Wide BW –5 Low IQ RS = 50Ω VO = 10mV Gain (dB) 10 RL = 100Ω VO = 10mV 5 –5 Low IQ –10 0 –15 –10 Phase (°) –30 RS = 0Ω RS = 50Ω RS = 100Ω Low IQ –40 –15 –10 Wide BW –20 5 0 Wide BW –10 0 10 Gain (dB) 1M Wide BW –20 RL = 1kΩ RL = 100Ω RL = 50Ω Low IQ –30 –40 –50 –50 1M 10M 100M Frequency (Hz) 1G 1M GAIN and PHASE vs FREQUENCY vs LOAD CAPACITANCE 1G GAIN and PHASE vs FREQUENCY vs LOAD CAPACITANCE 10 5 0 –5 RL = 100Ω RS = 50Ω VO = 10mV Gain (dB) RL = 100Ω RS = 50Ω VO = 10mV Low IQ Mode 10M 100M Frequency (Hz) –40 Phase (°) –30 –15 –10 CL = 0pF CL = 50pF CL = 200pF CL = 1nF –20 0 –10 0 –15 –10 5 –5 Wide BW Mode –10 0 10 CL = 0 CL = 50pF CL = 200pF CL = 1nF –20 –30 –40 –50 –50 1M 10M 100M Frequency (Hz) 1G 1M ® BUF634 4 10M 100M Frequency (Hz) 1G Gain (dB) Phase (°) 0 –5 Wide BW –40 –50 Phase (°) 5 –10 IQ = 15mA IQ = 9mA IQ = 4mA IQ = 2.5mA IQ = 1.5mA –20 Wide BW 10 –10 0 –15 –10 Phase (°) RL = 100Ω RS = 50Ω VO = 10mV Gain (dB) 10 RL = 100Ω 5 RS = 50Ω VO = 10mV 0 Gain (dB) GAIN and PHASE vs FREQUENCY vs QUIESCENT CURRENT TYPICAL PERFORMANCE CURVES (CONT) At TA = +25°C, VS = ±15V, unless otherwise noted. GAIN and PHASE vs FREQUENCY vs POWER SUPPLY VOLTAGE POWER SUPPLY REJECTION vs FREQUENCY 100 5 90 0 –5 Low IQ –10 0 –15 Phase (°) –10 Wide BW –20 Low IQ –30 –40 VS = ±18V VS = ±12V VS = ±5V VS = ±2.25V Power Supply Rejection (dB) Wide BW 10 Gain (dB) RL = 100Ω RS = 50Ω VO = 10mV 80 Wide BW 70 60 50 40 Low IQ 30 20 10 0 –50 1M 10M 100M Frequency (Hz) 1G 1k 100k 1M 10M Frequency (Hz) QUIESCENT CURRENT vs BANDWIDTH CONTROL RESISTANCE 20 10k SHORT CIRCUIT CURRENT vs TEMPERATURE 500 +15V 18 450 15mA at R = 0 14 BW 12 R Limit Current (mA) Quiescent Current (mA) 16 10 8 –15V 6 4 400 Wide Bandwidth Mode 350 Low IQ Mode 300 250 2 1.5mA at R = ∞ 0 200 10 100 1k 10k –50 –25 0 Resistance (Ω) 25 50 75 100 125 150 Junction Temperature (°C) QUIESCENT CURRENT vs TEMPERATURE QUIESCENT CURRENT vs TEMPERATURE 7 20 Cooling Low IQ Mode Quiescent Current (mA) Quiescent Current (mA) 6 5 4 ≈10°C 3 2 Thermal Shutdown 15 10 ≈10°C Wide BW Mode 5 1 Cooling Thermal Shutdown 0 0 –50 –25 0 25 50 75 100 125 150 175 200 –50 Junction Temperature (°C) –25 0 25 50 75 100 125 150 175 200 Junction Temperature (°C) ® 5 BUF634 TYPICAL PERFORMANCE CURVES (CONT) At TA = +25°C, VS = ±15V, unless otherwise noted. OUTPUT VOLTAGE SWING vs OUTPUT CURRENT OUTPUT VOLTAGE SWING vs OUTPUT CURRENT 13 VIN = 13V 12 Output Voltage Swing (V) Output Voltage Swing (V) 13 11 VS = ±15V Low IQ Mode 10 –10 –11 TJ = –40°C TJ = 25°C TJ = 125°C –12 VIN = –13V VIN = 13V 12 11 VS = ±15V Wide BW Mode 10 –10 –11 TJ = –40°C TJ = 25°C TJ = 125°C –12 VIN = –13V –13 –13 0 50 100 150 200 250 0 300 50 100 150 200 MAXIMUM POWER DISSIPATION vs TEMPERATURE 12 TO-220 and DDPAK Infinite Heat Sink θ JC = 6°C/W Power Dissipation (W) Power Dissipation (W) 10 TO-220 and DDPAK Free Air θJA = 65°C/W 8-Pin DIP θ JA = 100°C/W 300 MAXIMUM POWER DISSIPATION vs TEMPERATURE 3 2 250 |Output Current| (mA) |Output Current| (mA) 1 SO-8 θ JA = 150°C/W 8 6 TO-220 and DDPAK Free Air θ JA = 65°C/W 4 2 0 0 –50 –25 0 25 50 75 100 125 150 –50 Ambient Temperature (°C) –25 0 25 50 75 100 125 150 Ambient Temperature (°C) LARGE-SIGNAL RESPONSE RS = 50Ω, RL = 100Ω SMALL-SIGNAL RESPONSE RS = 50Ω, RL = 100Ω Input Input 100mV/div 10V/div Wide BW Mode Wide BW Mode Low IQ Mode Low IQ Mode 20ns/div 20ns/div ® BUF634 6 OUTPUT CURRENT The BUF634 can deliver up to ±250mA continuous output current. Internal circuitry limits output current to approximately ±350mA—see typical performance curve “Short Circuit Current vs Temperature”. For many applications, however, the continuous output current will be limited by thermal effects. The output voltage swing capability varies with junction temperature and output current—see typical curves “Output Voltage Swing vs Output Current.” Although all four package types are tested for the same output performance using a high speed test, the higher junction temperatures with the DIP and SO-8 package types will often provide less output voltage swing. Junction temperature is reduced in the DDPAK surface-mount power package because it is soldered directly to the circuit board. The TO-220 package used with a good heat sink further reduces junction temperature, allowing maximum possible output swing. APPLICATION INFORMATION Figure 1 is a simplified circuit diagram of the BUF634 showing its open-loop complementary follower design. V+ Thermal Shutdown VIN 200Ω VO I1(1) THERMAL PROTECTION Power dissipated in the BUF634 will cause the junction temperature to rise. A thermal protection circuit in the BUF634 will disable the output when the junction temperature reaches approximately 175°C. When the thermal protection is activated, the output stage is disabled, allowing the device to cool. Quiescent current is approximately 6mA during thermal shutdown. When the junction temperature cools to approximately 165°C the output circuitry is again enabled. This can cause the protection circuit to cycle on and off with a period ranging from a fraction of a second to several minutes or more, depending on package type, signal, load and thermal environment. The thermal protection circuit is designed to prevent damage during abnormal conditions. Any tendency to activate the thermal protection circuit during normal operation is a sign of an inadequate heat sink or excessive power dissipation for the package type. TO-220 package provides the best thermal performance. When the TO-220 is used with a properly sized heat sink, output is not limited by thermal performance. See Application Bulletin AB-037 for details on heat sink calculations. The DDPAK also has excellent thermal characteristics. Its mounting tab should be soldered to a circuit board copper area for good heat dissipation. Figure 3 shows typical thermal resistance from junction to ambient as a function of the copper area. The mounting tab of the TO-220 and DDPAK packages is electrically connected to the V– power supply. 150Ω 4kΩ BW V– Signal path indicated in bold. Note: (1) Stage currents are set by I1. FIGURE 1. Simplified Circuit Diagram. Figure 2 shows the BUF634 connected as an open-loop buffer. The source impedance and optional input resistor, RS, influence frequency response—see typical curves. Power supplies should be bypassed with capacitors connected close to the device pins. Capacitor values as low as 0.1µF will assure stable operation in most applications, but high output current and fast output slewing can demand large current transients from the power supplies. Solid tantalum 10µF capacitors are recommended. High frequency open-loop applications may benefit from special bypassing and layout considerations—see “High Frequency Applications” at end of applications discussion. V+ 10µF DIP/SO-8 Pinout shown 7 VIN RS 3 6 BUF634 4 1 The DIP and SO-8 surface-mount packages are excellent for applications requiring high output current with low average power dissipation. To achieve the best possible thermal performance with the DIP or SO-8 packages, solder the device directly to a circuit board. Since much of the heat is dissipated by conduction through the package pins, sockets will degrade thermal performance. Use wide circuit board traces on all the device pins, including pins that are not connected. With the DIP package, use traces on both sides of the printed circuit board if possible. VO RL 10µF Optional connection for wide bandwidth — see text. V– FIGURE 2. Buffer Connections. ® 7 BUF634 THERMAL RESISTANCE vs CIRCUIT BOARD COPPER AREA Thermal Resistance, θJA (°C/W) 60 Circuit Board Copper Area BUF634F Surface Mount Package 1oz copper 50 40 30 20 BUF634F Surface Mount Package 10 0 1 2 3 4 5 Copper Area (inches2) FIGURE 3. Thermal Resistance vs Circuit Board Copper Area. POWER DISSIPATION the quiescent current to approximately 15mA. Intermediate bandwidths can be set by connecting a resistor in series with the bandwidth control pin—see typical curve "Quiescent Current vs Resistance" for resistor selection. Characteristics of the bandwidth control pin can be seen in the simplified circuit diagram, Figure 1. The rated output current and slew rate are not affected by the bandwidth control, but the current limit value changes slightly. Output voltage swing is somewhat improved in the wide bandwidth mode. The increased quiescent current when in wide bandwidth mode produces greater power dissipation during low output current conditions. This quiescent power is equal to the total supply voltage, (V+) + |(V–)|, times the quiescent current. Power dissipation depends on power supply voltage, signal and load conditions. With DC signals, power dissipation is equal to the product of output current times the voltage across the conducting output transistor, VS – VO. Power dissipation can be minimized by using the lowest possible power supply voltage necessary to assure the required output voltage swing. For resistive loads, the maximum power dissipation occurs at a DC output voltage of one-half the power supply voltage. Dissipation with AC signals is lower. Application Bulletin AB-039 explains how to calculate or measure power dissipation with unusual signals and loads. Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate heat sink. For reliable operation, junction temperature should be limited to 150°C, maximum. To estimate the margin of safety in a complete design, increase the ambient temperature until the thermal protection is triggered. The thermal protection should trigger more than 45°C above the maximum expected ambient condition of your application. BOOSTING OP AMP OUTPUT CURRENT The BUF634 can be connected inside the feedback loop of most op amps to increase output current—see Figure 4. When connected inside the feedback loop, the BUF634’s offset voltage and other errors are corrected by the feedback of the op amp. To assure that the op amp remains stable, the BUF634’s phase shift must remain small throughout the loop gain of the circuit. For a G=+1 op amp circuit, the BUF634 must contribute little additional phase shift (approximately 20° or less) at the unity-gain frequency of the op amp. Phase shift is affected by various operating conditions that may affect stability of the op amp—see typical Gain and Phase curves. INPUT CHARACTERISTICS Internal circuitry is protected with a diode clamp connected from the input to output of the BUF634—see Figure 1. If the output is unable to follow the input within approximately 3V (such as with an output short-circuit), the input will conduct increased current from the input source. This is limited by the internal 200Ω resistor. If the input source can be damaged by this increase in load current, an additional resistor can be connected in series with the input. Most general-purpose or precision op amps remain unitygain stable with the BUF634 connected inside the feedback loop as shown. Large capacitive loads may require the BUF634 to be connected for wide bandwidth for stable operation. High speed or fast-settling op amps generally require the wide bandwidth mode to remain stable and to assure good dynamic performance. To check for stability with an op amp, look for oscillations or excessive ringing on signal pulses with the intended load and worst case conditions that affect phase response of the buffer. BANDWIDTH CONTROL PIN The –3dB bandwidth of the BUF634 is approximately 30MHz in the low quiescent current mode (1.5mA typical). To select this mode, leave the bandwidth control pin open (no connection). Bandwidth can be extended to approximately 180MHz by connecting the bandwidth control pin to V–. This increases ® BUF634 8 HIGH FREQUENCY APPLICATIONS The BUF634’s excellent bandwidth and fast slew rate make it useful in a variety of high frequency open-loop applications. When operated open-loop, circuit board layout and bypassing technique can affect dynamic performance. For best results, use a ground plane type circuit board layout and bypass the power supplies with 0.1µF ceramic chip capacitors at the device pins in parallel with solid tantalum 10µF capacitors. Source resistance will affect high-frequency peaking and step response overshoot and ringing. Best response is usually achieved with a series input resistor of 25Ω to 200Ω, depending on the signal source. Response with some loads (especially capacitive) can be improved with a resistor of 10Ω to 150Ω in series with the output. V+ C1(1) VO OPA VIN BUF634 BW NOTE: (1) C1 not required for most common op amps. Use with unity-gain stable high speed op amps. Wide BW mode (if required) V– OP AMP RECOMMENDATIONS OPA177, OPA1013 OPA111, OPA2111 OPA121, OPA234(1), OPA130(1) Use Low IQ mode. G = 1 stable. OPA27, OPA2107 OPA602, OPA131(1) Low IQ mode is stable. Increasing CL may cause excessive ringing or instability. Use Wide BW mode. OPA627, OPA132(1) Use Wide BW mode, C1 = 200pF. G = 1 stable. OPA637, OPA37 Use Wide BW mode. These op amps are not G = 1 stable. Use in G > 4. NOTE: (1) Single, dual, and quad versions. FIGURE 4. Boosting Op Amp Output Current. V+ G = +21 250Ω 5kΩ VIN 1µF OPA132 BUF634 BW Drives headphones or small speakers. RL = 100Ω THD+N f 100kΩ V– 1kHz 0.015% 20kHz 0.02% FIGURE 5. High Performance Headphone Driver. +24V C(1) 10kΩ + 10µF BUF634 C(1) 10kΩ IO = ±200mA VIN ±2V + 12V – pseudo ground + 12V – OPA177 BUF634 Valve 10Ω NOTE: (1) System bypass capacitors. FIGURE 6. Pseudo-Ground Driver. FIGURE 7. Current-Output Valve Driver. 10kΩ 1kΩ VIN ±1V 10kΩ 9kΩ 1/2 OPA2234 BUF634 Motor BUF634 1/2 OPA2234 ±20V at 250mA FIGURE 8. Bridge-Connected Motor Driver. ® 9 BUF634 PACKAGE OPTION ADDENDUM www.ti.com 26-Mar-2010 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty BUF634F OBSOLETE DDPAK/ TO-263 KTT 5 BUF634F/500 ACTIVE DDPAK/ TO-263 KTT 5 BUF634F/500E3 ACTIVE DDPAK/ TO-263 KTT BUF634FKTTT ACTIVE DDPAK/ TO-263 BUF634FKTTTE3 ACTIVE BUF634P Lead/Ball Finish MSL Peak Temp (3) TBD Call TI Call TI 500 Pb-Free (RoHS) CU SN Level-2-260C-1 YEAR 5 500 Pb-Free (RoHS) CU SN Level-2-260C-1 YEAR KTT 5 50 TBD Call TI Call TI DDPAK/ TO-263 KTT 5 50 TBD Call TI Call TI ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) CU NIPDAU N / A for Pkg Type BUF634PG4 ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) CU NIPDAU N / A for Pkg Type BUF634T ACTIVE TO-220 KC 5 49 TBD Call TI Call TI BUF634TG3 ACTIVE TO-220 KC 5 49 TBD Call TI Call TI BUF634U ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR BUF634U/2K5 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR BUF634U/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR BUF634UE4 ACTIVE SOIC D 8 CU NIPDAU Level-3-260C-168 HR 75 Green (RoHS & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com 26-Mar-2010 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device BUF634U/2K5 Package Package Pins Type Drawing SOIC D 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.4 Pack Materials-Page 1 6.4 B0 (mm) K0 (mm) P1 (mm) 5.2 2.1 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) BUF634U/2K5 SOIC D 8 2500 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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