HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 128K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 2K x 36 banks – 4 megabits of memory on chip Bank access controlled via bank address pins High-speed data access – Commercial: 3.4ns (200MHz)/3.6ns (166MHz)/ 4.2ns (133MHz) (max.) – Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.) Selectable Pipelined or Flow-Through output mode Counter enable and repeat features Dual chip enables allow for depth expansion without additional logic Full synchronous operation on both ports – 5ns cycle time, 200MHz operation (14Gbps bandwidth) – Fast 3.4ns clock to data out ◆ ◆ ◆ ◆ ◆ ◆ IDT70V7599S – 1.5ns setup to clock and 0.5ns hold on all control, data, and address inputs @ 200MHz – Data input, address, byte enable and control registers – Self-timed write allows fast cycle time Separate byte controls for multiplexed bus and bus matching compatibility LVTTL- compatible, 3.3V (±150mV) power supply for core LVTTL compatible, selectable 3.3V (±150mV) or 2.5V (±100mV) power supply for I/Os and control signals on each port Industrial temperature range (-40°C to +85°C) is available at 166MHz and 133MHz Available in a 208-pin Plastic Quad Flatpack (PQFP), 208-pin fine pitch Ball Grid Array (fpBGA), and 256-pin Ball Grid Array (BGA) Supports JTAG features compliant with IEEE 1149.1 Functional Block Diagram PL/FTL OPTL CLKL ADSL CNTENL REPEATL R/WL CE0L CE1L BE3L BE2L BE1L BE0L OEL MUX CONTROL LOGIC CONTROL LOGIC 2Kx36 MEMORY ARRAY (BANK 0) PL/FTR OPTR CLKR ADSR CNTENR REPEATR R/WR CE0R CE1R BE3R BE2R BE1R BE0R OER MUX I/O0L-35L A10L A0L BA5L BA4L BA3L BA2L BA1L BA0L MUX I/O CONTROL I/O CONTROL 2Kx36 MEMORY ARRAY (BANK 1) ADDRESS DECODE ADDRESS DECODE MUX BANK DECODE BANK DECODE MUX I/O0R-35R A10R A0R BA5R BA4R BA3R BA2R BA1R BA0R 2Kx36 MEMORY ARRAY (BANK 63) NOTE: 1. The Bank-Switchable dual-port uses a true SRAM core instead of the traditional dual-port SRAM core. As a result, it has unique operating characteristics. Please refer to the functional description on page 19 for details. MUX , TDI TDO JTAG TMS TCK TRST 5626 drw 01 DECEMBER 2002 1 ©2002 Integrated Device Technology, Inc. DSC 5626/4 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges Description: The IDT70V7599 is a high-speed 128Kx36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM organized into 64 independent 2Kx36 banks. The device has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed by the other port. Accesses by the ports into specific banks are controlled via the bank address pins under the user's direct control. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. With an input data register, the IDT70V7599 has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The dual chip enables also facilitate depth expansion. The 70V7599 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device(VDD) remains at 3.3V. Please refer also to the functional description on page 19. Pin Configuration(1,2,3,4) 11/08/01 A1 A2 IO19L IO18L B1 I/O20R C1 B2 VSS C2 A3 VSS B3 I/O18R C3 A4 TDO B4 TDI C4 A5 NC B5 NC C5 VDDQL I/O19R VDDQR PL/FTL D1 I/O22L E1 D2 VSS E2 D3 D4 NC D5 I/O21L I/O20L BA4L E3 A6 BA5L B6 BA2L C6 BA3L D6 BA0L A7 BA1L B7 A9L C7 A10L D7 A7L A8 A8L B8 BE2L C8 BE3L D8 BE0L A9 BE1L B9 CE0L C9 CE1L D9 VDD A10 VDD B10 VSS C10 VSS D10 A11 A12 A13 CLKL CNTENL A4L B11 ADSL C11 R/WL D11 OEL REPEATL B12 A5L C12 A6L D12 A3L B13 A1L C13 A2L D13 F2 F3 VDDQL I/O23R I/O24L G1 I/O26L H1 VDD J1 VDDQL K1 I/O28R L1 G2 VSS H2 G3 E4 VDD K2 VSS L2 J3 VSS K3 I/O27R L3 VSS C14 VDD D14 F14 F4 VSS VSS G14 G4 H4 H14 70V7599BF BF-208(5) VDD J4 J14 VSS VSS 208-Pin fpBGA Top View(6) K4 VSS K14 L4 L14 M1 M14 M3 N1 I/O31L P1 N2 VSS P2 N3 M4 VSS VSS N4 N14 P4 P5 P6 P7 I/O32R I/O32L VDDQR I/O35R TRST BA5R BA1R R1 VSS T1 R2 R3 R4 I/O33L I/O34R TCK T2 T3 T4 I/O33R I/O34L VDDQL TMS U1 VSS U2 U3 I/O35L PL/FT R U4 NC VSS B17 B16 VDDQR I/O16L I/O15R C15 C16 C17 I/O16R I/O15L D15 VSS D17 D16 E15 F15 E16 E17 VSS F16 I/O13L F17 I/O12R I/O11L VDDQR G15 G16 G17 H15 IO9R J15 VDD K15 H16 H17 VSS J16 L15 I/O7L M15 R5 NC T5 NC U5 R6 BA2R T6 BA3R U6 BA4R BA0R R7 A9R T7 A10R U7 A7R P8 A8R R8 P9 BE1R R9 BE2R CE0R T8 BE3R U8 BE0R T9 CE1R U9 VDD P10 VDD R10 VSS T10 VSS U10 OER P11 P12 P13 CLKR CNTENR A4R R11 ADSR T11 R/WR R12 A5R T12 A6R U12 A3R R13 A1R T13 A2R U13 A0R P14 I/O2L R14 VSS T14 VSS U14 VDD I/O10R J17 VSS K16 VDDQR K17 L16 VSS L17 VSS M16 I/O8L M17 I/O6L I/O5R VDDQR N15 N16 N17 I/O3R VDDQL I/O4R I/O31R I/O30L P3 B15 I/O7R VDDQL I/O8R I/O6R M2 A17 A16 OPTL I/O17L I/O9L VDDQL I/O10L I/O11R I/O29R I/O28L VDDQR I/O27L VDDQL I/O29L I/O30R A15 I/O12L I/O13R I/O26R VDDQR I/O25R J2 B14 E14 I/O25L I/O24R H3 A0L VDD I/O17R VDDQL I/O14L I/O14R I/O23L I/O22R VDDQR I/O21R F1 A14 P15 I/O3L R15 I/O5L P17 P16 VSS R16 I/O4L R17 VDDQL I/O1R VDDQR T15 I/O0R U15 T16 T17 VSS I/O2R U17 U16 OPTR I/O0L I/O1L , 5626 drw 02c NOTES: 1. All VDD pins must be connected to 3.3V power supply. 2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V). 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 15mm x 15mm x 1.4mm with 0.8mm ball pitch. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. 6.42 2 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges Pin Configuration(1,2,3,4) (con't.) 70V7599BC BC-256(5) 256-Pin BGA Top View(6) 11/08/01 A1 NC B1 I/O18L C1 A2 TDI B2 NC C2 I/O18R I/O19L D1 D2 A3 NC B3 TDO C3 VSS D3 A4 NC B4 NC C4 BA5L D4 A5 A6 BA3L BA0L B5 B6 BA4L C5 BA2L D5 BA1L C6 A10L D6 A7 A8L B7 A9L C7 A7L D7 A8 A9 BE2L CE1L B9 B8 A10 A11 OEL CNTENL B10 B11 CE0L R/WL REPEATL BE3L C9 C8 BE1L C10 C11 BE0L CLKL ADSL D9 D8 D10 D11 A12 A5L B12 A4L C12 A6L D12 A13 A2L B13 A1L C13 A3L D13 I/O20R I/O19R I/O20L PL/FTL VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDD E1 E2 E3 E4 I/O21R I/O21L I/O22L VDDQL F1 F2 F3 F4 I/O23L I/O22R I/O23R VDDQL G1 G2 G3 G4 I/O24R I/O24L I/O25L VDDQR H1 H2 H3 H4 E5 VDD F5 VDD G5 VSS H5 I/O26L I/O25R I/O26R VDDQR VSS J1 J2 J3 J4 I/O27L I/O28R I/O27R VDDQL K1 K2 K3 K4 I/O29R I/O29L I/O28L VDDQL L1 L2 L3 L4 I/O30L I/O31R I/O30R VDDQR M1 M2 M3 M4 I/O32R I/O32L I/O31L VDDQR N1 N2 N3 N4 J5 VSS K5 VSS L5 VDD M5 VDD N5 E6 VDD F6 VSS G6 VSS H6 VSS J6 VSS K6 VSS L6 VSS M6 VDD N6 E7 VSS F7 VSS G7 VSS H7 VSS J7 VSS K7 VSS L7 VSS M7 VSS N7 E8 E9 VSS VSS F9 F8 VSS VSS G8 G9 VSS VSS H8 H9 VSS VSS J8 J9 VSS K8 VSS K9 VSS VSS L8 L9 VSS VSS M8 M9 VSS VSS N8 N9 E10 VSS F10 VSS G10 VSS H10 VSS J10 VSS K10 VSS L10 VSS M10 VSS N10 E11 VDD F11 VSS G11 VSS H11 VSS J11 VSS K11 VSS L11 VSS M11 VDD N11 E12 P2 P3 I/O35R I/O34L TMS R1 I/O35L T1 NC R2 NC T2 TCK R3 TRST T3 NC P4 P5 BA5R BA2R R4 NC T4 NC R5 P6 A10R R6 BA4R BA1R T5 T6 BA3R BA0R P7 A7R R7 A9R T7 A8R P8 P9 P10 P11 BE1R BE0R CLKR ADSR R8 R9 R10 R11 BE3R CE0R R/WR REPEATR T8 T9 BE2R CE1R T10 T11 OER CNTENR A0L B14 VDD C14 A15 NC B15 I/O17L C15 A16 NC B16 NC C16 OPTL I/O17R I/O16L D14 D15 D16 I/O15R I/O15L I/O16R E14 E15 E16 VDD VDDQR I/O13L I/O14L I/O14R F12 F13 F14 F15 F16 VDD VDDQR I/O12R I/O13R I/O12L G12 VSS H12 VSS J12 VSS K12 VSS L12 VDD M12 VDD N12 I/O33L I/O34R I/O33R PL/FTR VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL P1 E13 A14 P12 A6R R12 A4R T12 A5R G13 G14 G15 G16 VDDQL I/O10L I/O11L I/O11R H13 H14 VDDQL I/O9R J13 J14 H15 J15 VDDQR I/O8R I/O7R K13 K14 VDDQR I/O6R L13 L14 VDDQL I/O5L M13 M14 VDDQL I/O3R N13 VDD P13 A3R R13 A1R T13 A2R N14 I/O2L P14 K15 I/O6L L15 OPTR T14 A0R J16 I/O8L K16 I/O7L L16 I/O4R I/O5R M15 I/O3L N15 M16 I/O4L N16 I/O1R I/O2R P15 I/O0L I/O0R R14 H16 IO9L I/O10R R15 NC T15 NC P16 I/O1L R16 NC T16 NC NOTES: 5626 drw 02d 1. All VDD pins must be connected to 3.3V power supply. 2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V). 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 17mm x 17mm x 1.4mm, with 1.0mm ball-pitch. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. 6.42 3 , , IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM (1,2,3,4) 70V7599DR DR-208(5) 208-Pin PQFP Top View(6) 156 155 154 153 152 151 150 149 148 147 146 145 144 143 142 141 140 139 138 137 136 135 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 208 207 206 205 204 203 202 201 200 199 198 197 196 195 194 193 192 191 190 189 188 187 186 185 184 183 182 181 180 179 178 177 176 175 174 173 172 171 170 169 168 167 166 165 164 163 162 161 160 159 158 157 11/08/01 I/O19L I/O19R I/O20L I/O20R VDDQL VSS I/O21L I/O21R I/O22L I/O22R VDDQR VSS I/O23L I/O23R I/O24L I/O24R VDDQL VSS I/O25L I/O25R I/O26L I/O26R VDDQR VSS VDD VDD VSS VSS VDDQL VSS I/O27R I/O27L I/O28R I/O28L VDDQR VSS I/O29R I/O29L I/O30R I/O30L VDDQL VSS I/O31R I/O31L I/O32R I/O32L VDDQR VSS I/O33R I/O33L I/O34R I/O34L (con't.) VSS VDDQR I/O18R I/O18L VSS PL/FTL TDI TDO NC NC NC BA5L BA4L BA3L BA2L BA1L BA0L A10L A9L A8L A7L BE3L BE2L BE1L BE0L CE1L CE0L VDD VDD VSS VSS CLKL OEL R/WL ADSL CNTENL REPEATL A6L A5L A4L A3L A2L A1L A0L VDD VDD VSS OPTL I/O17L I/O17R VDDQR VSS Pin Configuration Industrial and Commercial Temperature Ranges I/O16L I/O16R I/O15L I/O15R VSS VDDQL I/O14L I/O14R I/O13L I/O13R VSS VDDQR I/O12L I/O12R I/O11L I/O11R VSS VDDQL I/O10L I/O10R I/O9L I/O9R VSS VDDQR VDD VDD VSS VSS VSS VDDQL I/O8R I/O8L I/O7R I/O7L VSS VDDQR I/O6R I/O6L I/O5R I/O5L VSS VDDQL I/O4R I/O4L I/O3R I/O3L VSS VDDQR I/O2R I/O2L I/O1R I/O1L VSS VDDQL I/O35R I/O35L PL/FTR TMS TCK TRST NC NC NC BA5R BA4R BA3R BA2R BA1R BA0R A10R A9R A8R A7R BE3R BE2R BE1R BE0R CE1R CE0R VDD VDD VSS VSS CLKR OER R/WR ADSR CNTENR REPEATR A6R A5R A4R A3R A2R A1R A0R VDD VSS VSS OPTR I/O0L I/O0R VDDQL VSS , 5626 drw 02a NOTES: 1. All VDD pins must be connected to 3.3V power supply. 2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V). 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 28mm x 28mm x 3.5mm. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. 6.42 4 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges Pin Names Left Port Right Port Names CE0L, CE1L CE0R, CE1R Chip Enables R/WL R/WR Read/Write Enable OEL OER Output Enable BA0L - BA5L BA0R - BA5R Bank Address (4) A0L - A10L A0R - A10R Address I/O0L - I/O35L I/O0R - I/O35R Data Input/Output CLKL CLKR Clock PL/FTL PL/FTR Pipeline/Flow-Through ADSL ADSR Address Strobe Enable CNTENL CNTENR Counter Enable REPEATL REPEATR Counter Repeat(3) BE0L - BE3L BE0R - BE3R Byte Enables (9-bit bytes) VDDQL VDDQR Power (I/O Bus) (3.3V or 2.5V)(1) OPTL OPTR Option for selecting VDDQX(1,2) VDD Power (3.3V)(1) VSS Ground (0V) TDI Test Data Input TDO Test Data Output TCK Test Logic Clock (10MHz) TMS Test Mode Select TRST Reset (Initialize TAP Controller) NOTES: 1. VDD, OPTX, and VDDQX must be set to appropriate operating levels prior to applying inputs on the I/Os and controls for that port. 2. OPTX selects the operating voltage levels for the I/Os and controls on that port. If OPTX is set to VIH (3.3V), then that port's I/Os and controls will operate at 3.3V levels and VDDQX must be supplied at 3.3V. If OPTX is set to VIL (0V), then that port's I/Os and address controls will operate at 2.5V levels and VDDQX must be supplied at 2.5V. The OPT pins are independent of one another—both ports can operate at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V with the other at 2.5V. 3. When REPEATX is asserted, the counter will reset to the last valid address loaded via ADS X. 4. Accesses by the ports into specific banks are controlled by the bank address pins under the user's direct control: each port can access any bank of memory with the shared array that is not currently being accessed by the opposite port (i.e., BA0L - BA 5L ≠ BA0R - BA 5R). In the event that both ports try to access the same bank at the same time, neither access will be valid, and data at the two specific addresses targeted by the ports within that bank may be corrupted (in the case that either or both ports are writing) or may result in invalid output (in the case that both ports are trying to read). 5626 tbl 01 6.42 5 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges Truth Table IRead/Write and Enable Control (1,2,3,4) OE3 CLK CE0 CE1 BE3 BE2 BE1 BE0 R/W Byte 3 I/O27-35 Byte 2 I/O18-26 Byte 1 I/O9-17 Byte 0 I/O0-8 MODE X ↑ H X X X X X X High-Z High-Z High-Z High-Z Deselected–Power Down X ↑ X L X X X X X High-Z High-Z High-Z High-Z Deselected–Power Down X ↑ L H H H H H X High-Z High-Z High-Z High-Z All Bytes Deselected X ↑ L H H H H L L High-Z High-Z High-Z DIN Write to Byte 0 Only X ↑ L H H H L H L High-Z High-Z DIN High-Z Write to Byte 1 Only X ↑ L H H L H H L High-Z DIN High-Z High-Z Write to Byte 2 Only X ↑ L H L H H H L DIN High-Z High-Z High-Z Write to Byte 3 Only X ↑ L H H H L L L High-Z High-Z DIN DIN Write to Lower 2 Bytes Only X ↑ L H L L H H L DIN DIN High-Z High-Z Write to Upper 2 bytes Only X ↑ L H L L L L L DIN DIN DIN DIN Write to All Bytes L ↑ L H H H H L H High-Z High-Z High-Z DOUT Read Byte 0 Only L ↑ L H H H L H H High-Z High-Z DOUT High-Z Read Byte 1 Only L ↑ L H H L H H H High-Z DOUT High-Z High-Z Read Byte 2 Only L ↑ L H L H H H H DOUT High-Z High-Z High-Z Read Byte 3 Only L ↑ L H H H L L H High-Z High-Z DOUT DOUT Read Lower 2 Bytes Only L ↑ L H L L H H H DOUT DOUT High-Z High-Z Read Upper 2 Bytes Only L ↑ L H L L L L H DOUT DOUT DOUT DOUT H X X X X X X X X High-Z High-Z High-Z High-Z Read All Bytes Outputs Disabled NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. ADS, CNTEN, REPEAT are set as appropriate for address access. Refers to Truth Table II for details. 3. OE is an asynchronous input signal. 4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here. 5626 tbl 02 Truth Table IIAddress and Address Counter Control(1,2,7) Address An Previous Address X Addr Used CLK An ↑ ADS (4) L CNTEN REPEAT(6) I/O(3) X H DI/O (n) MODE External Address Used X An An + 1 ↑ H L H DI/O (n+1) Counter Enabled—Internal Address generation X An + 1 An + 1 ↑ H H H DI/O (n+1) External Addre ss Blocked—Counter disab led (An + 1 reused) An ↑ X (4) DI/O (0) X X X (5) L Counter Set to last valid ADS load 5626 tbl 03 NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. Read and write operations are controlled by the appropriate setting of R/W, CE0, CE1, BEn and OE. 3. Outputs configured in flow-through output mode: if outputs are in pipelined mode the data out will be delayed by one cycle. 4. ADS and REPEAT are independent of all other memory control signals including CE0, CE1 and BEn 5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other memory control signals including CE0, CE1, BEn. 6. When REPEAT is asserted, the counter will reset to the last valid address loaded via ADS. This value is not set at power-up: a known location should be loaded via ADS during initialization if desired. Any subsequent ADS access during operations will update the REPEAT address location. 7. The counter includes bank address and internal address. The counter will advance across bank boundaries. For example, if the counter is in Bank 0, at address FFFh, and is advanced one location, it will move to address 0h in Bank 1. By the same token, the counter at FFFh in Bank 63 will advance to 0h in Bank 0. Refer to Timing Waveform of Counter Repeat, page 18. Care should be taken during operation to avoid having both counters point to the same bank (i.e., ensure BA0L - BA5L ≠ BA0R - BA5R), as this condition will invalidate the access for both ports. Please refer to the functional description on page 19 for details. 6.42 6 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Recommended Operating Temperature and Supply Voltage(1) Grade Commercial Industrial Industrial and Commercial Temperature Ranges Recommended DC Operating Conditions with VDDQ at 2.5V Symbol Parameter Ambient Temperature GND VDD V DD Core Supply Voltage 0OC to +70OC 0V 3.3V + 150mV VDDQ I/O Supply Voltage (3) 0V 3.3V + 150mV V SS Ground O O -40 C to +85 C NOTE: 1. This is the parameter TA. This is the "instant on" case temperature. 5626 tbl 04 Min. Typ. Max. Unit 3.15 3.3 3.45 V 2.4 2.5 2.6 V 0 0 0 VDDQ + 100mV (2) V V VIH Input High Voltage (Address & Control Inputs) 1.7 ____ VIH Input High Voltage - I/O(3) 1.7 ____ VDDQ + 100mV(2) V ____ 0.7 V VIL Input Low Voltage -0.3 (1) 5626 tbl 05a NOTES: 1. Undershoot of VIL > -1.5V for pulse width less than 10ns is allowed. 2. VTERM must not exceed VDDQ + 100mV. 3. To select operation at 2.5V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VIL (0V), and VDDQX for that port must be supplied as indicated above. Absolute Maximum Ratings(1) Symbol Rating Commercial & Industrial Unit VTERM(2) Terminal Voltage with Respect to GND -0.5 to +4.6 V TBIAS Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -65 to +150 o C IOUT DC Output Current Recommended DC Operating Conditions with VDDQ at 3.3V Symbol 50 mA 5626 tbl 06 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or 4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV. Parameter Min. Typ. Max. Unit VDD Core Supply Voltage 3.15 3.3 3.45 V VDDQ I/O Supply Voltage (3) 3.15 3.3 3.45 V VSS Ground 0 0 0 (2) VDDQ + 150mV V V VIH Input High Voltage (Address & Control Inputs)(3) 2.0 ____ VIH Input High Voltage - I/O(3) 2.0 ____ VDDQ + 150mV(2) V VIL Input Low Voltage -0.3(1) ____ 0.8 V 5626 tbl 05b NOTES: 1. Undershoot of VIL > -1.5V for pulse width less than 10ns is allowed. 2. VTERM must not exceed VDDQ + 150mV. 3. To select operation at 3.3V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VIH (3.3V), and VDDQX for that port must be supplied as indicated above. 6.42 7 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges (1) Capacitance (TA = +25°C, F = 1.0MHZ) PQFP ONLY Symbol CIN Parameter Input Capacitance (3) COUT Output Capacitance Conditions(2) Max. Unit VIN = 3dV 8 pF V OUT = 3dV 10.5 pF 5626 tbl 07 NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references CI/O. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 3.3V ± 150mV) 70V7599S Symbol Min. Max. Unit VDDQ = Max., VIN = 0V to V DDQ ___ 10 µA Output Leakage Current CE0 = VIH or CE1 = VIL, VOUT = 0V to V DDQ ___ 10 µA VOL (3.3V) Output Low Voltage (2) IOL = +4mA, VDDQ = Min. ___ 0.4 V VOH (3.3V) Output High Voltage(2) IOH = -4mA, VDDQ = Min. 2.4 ___ V VOL (2.5V) (2) IOL = +2mA, VDDQ = Min. ___ 0.4 V 2.0 ___ V |ILI| |ILO| VOH (2.5V) Parameter (1) Input Leakage Current (1) Output Low Voltage Output High Voltage (2) Test Conditions IOH = -2mA, VDDQ = Min. 5626 tbl 08 NOTES: 1. At VDD < 2.0V leakages are undefined. 2. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details. 6.42 8 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(5) (VDD = 3.3V ± 150mV) Sym bol IDD IS B1 IS B2 IS B3 IS B4 P aram eter Test Condition Version 70V 7599S200 (7) Com 'l O nly 70V 7599S166 (6) Com 'l & Ind Typ. (4) M ax. Typ. (4) M ax. Typ. (4) M ax. Unit mA 70V 7599S133 Com 'l & Ind Dy nam ic O p e rating Curre nt (Bo th P o rts A c tiv e ) CEL and CER = V IL , O utp uts Dis ab le d , f = fM A X (1 ) COM 'L S 815 950 675 790 550 645 IND S ____ ____ 675 830 550 675 S tand b y Curre nt (Bo th P o rts - TTL Le v e l Inp uts ) CEL = CER = V IH f = fM A X (1 ) COM 'L S 340 410 275 340 250 295 IND S ____ ____ 275 355 250 310 S tand b y Curre nt (One P o rt - TTL Le v e l Inp uts ) CE"A " = V IL and CE"B " = V IH (3 ) Ac tiv e P o rt Outp uts Disab le d , f= fM A X (1 ) COM 'L S 690 770 515 640 460 520 IND S ____ ____ 515 660 460 545 F ull Stand b y Curre nt (Bo th P o rts - CM O S Le v e l Inp uts ) B o th Po rts CEL and CER > V DD - 0.2V, V IN > V DD - 0.2V o r V IN < 0.2 V, f = 0 (2 ) COM 'L S 10 30 10 30 10 30 IND S ____ ____ 10 40 10 40 F ull Stand b y Curre nt (One P o rt - CM OS Le v e l Inp uts ) CE"A " < 0.2V and CE"B " > V DD - 0.2V (3 ) V IN > V DD - 0.2V o r V IN < 0.2V Ac tiv e P o rt, O utp uts Disab le d , f = f M A X (1 ) COM 'L S 690 770 515 640 460 520 IND S ____ ____ 515 660 460 545 mA mA mA mA 5626 tb l 0 9 NOTES: 1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS" at input levels of GND to 3V. 2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby. 3. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 4. VDD = 3.3V, TA = 25°C for Typ, and are not production tested. IDD DC (f=0) = 120mA (Typ). 5. CEX = V IL means CE0X = VIL and CE1X = VIH CEX = VIH means CE0X = VIH or CE1X = VIL CEX < 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V CEX > VCC - 0.2V means CE0X > VCC - 0.2V or CE1X < 0.2V "X" represents "L" for left port or "R" for right port. 6. 166MHz Industrial Temperature not available in BF-208 package. 7. This speed grade available when VDDQ = 3.3.V for a specific port (i.e., OPTx = VIH). This speed grade available in BC-256 package only. 6.42 9 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Test Conditions (VDDQ - 3.3V/2.5V) Input Pulse Levels (Address & Controls) GND to 3.0V/GND to 2.4V Input Pulse Levels (I/Os) GND to 3.0V/GND to 2.4V Input Rise/Fall Times 2.5V 833Ω 2ns Input Timing Reference Levels 1.5V/1.25V Output Reference Levels 1.5V/1.25V Output Load DATAOUT 5pF* 770Ω Figures 1 and 2 5626 tbl 10 , 3.3V 590Ω 50Ω 50Ω DATAOUT 1.5V/1.25 10pF (Tester) , DATAOUT 435Ω 5pF* 5626 drw 03 Figure 1. AC Output Test load. 5626 drw 04 Figure 2. Output Test Load (For tCKLZ , tCKHZ, tOLZ, and tOHZ). *Including scope and jig. 10.5pF is the I/O capacitance of this device, and 10pF is the AC Test Load Capacitance. 7 6 5 4 ∆tCD (Typical, ns) 3 2 • 1 • 20.5 • 30 • 50 80 100 200 -1 Capacitance (pF) 5626 drw 05 Figure 3. Typical Output Derating (Lumped Capacitive Load). 6.42 10 , , IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing) (2) (VDD = 3.3V ± 150mV, TA = 0°C to +70°C) 70V7599S200 (5) Com'l Only Symbol tCY C1 tCY C2 tCH1 tCL 1 tCH2 tCL 2 Parameter Clo ck Cycle Time (Flo w-Thro ug h) (1) Clo ck Cycle Time (P ip e line d) (1) Clo ck Hig h Time (Flo w-Thro ug h) Clo ck Lo w Tim e (Flow-Thro ugh) Clo ck Hig h Time (P ip e line d) Clo ck Lo w Tim e (P ipe line d ) (1) (1) (2) (1) 70V7599S166 (3,4) Com'l & Ind 70V7599S133 (3) Com'l & Ind Min. Max. Min. Max. Min. Max. Unit 15 ____ 20 ____ 25 ____ ns 5 ____ 6 ____ 7.5 ____ ns 5 ____ 6 ____ 7 ____ ns 5 ____ 6 ____ 7 ____ ns 2.0 ____ 2.1 ____ 2.6 ____ ns 2.0 ____ 2.1 ____ 2.6 ____ ns tR Clo ck Rise Time ____ 1.5 ____ 1.5 ____ 1.5 ns tF Clo ck Fall Time ____ 1.5 ____ 1.5 ____ 1.5 ns tS A A d dre ss Se tup Tim e 1.5 ____ 1.7 ____ 1.8 ____ ns tHA A d dre ss Ho ld Tim e 0.5 ____ 0.5 ____ 0.5 ____ ns 1.5 ____ 1.7 ____ 1.8 ____ ns 0.5 ____ 0.5 ____ 0.5 ____ ns 1.5 ____ 1.7 ____ 1.8 ____ ns 0.5 ____ 0.5 ____ 0.5 ____ ns ns tS C tHC tS W tHW Chip E nab le S e tup Time Chip E nab le Ho ld Time R/W S e tup Time R/W Ho ld Time tS D Inp ut Data S e tup Time 1.5 ____ 1.7 ____ 1.8 ____ tHD Input Data Ho ld Tim e 0.5 ____ 0.5 ____ 0.5 ____ ns tSA D ADS S e tup Time 1.5 ____ 1.7 ____ 1.8 ____ ns tHA D ADS Ho ld Time 0.5 ____ 0.5 ____ 0.5 ____ ns tSCN CNTEN S e tup Time 1.5 ____ 1.7 ____ 1.8 ____ ns tHCN CNTEN Ho ld Time 0.5 ____ 0.5 ____ 0.5 ____ ns tS RP T REPEAT S e tup Time 1.5 ____ 1.7 ____ 1.8 ____ ns tHRP T REPEAT Ho ld Time 0.5 ____ 0.5 ____ 0.5 ____ ns Outp ut Enab le to Data Valid ____ 4.0 ____ 4.0 ____ 4.2 ns 0.5 ____ 0.5 ____ 0.5 ____ ns 1 3.4 1 3.6 1 4.2 ns tOE tOL Z Outp ut Enab le to Outp ut Lo w-Z tO HZ Outp ut Enab le to Outp ut Hig h-Z tCD1 Clo ck to Data Valid (Flo w-Thro ug h) (1) ____ (1) 10 ____ 12 ____ 15 ns ____ tCD2 Clo ck to Data Valid (Pip e lined ) 3.4 ____ 3.6 ____ 4.2 ns tDC Data Output Ho ld A fte r Clo ck Hig h 1 ____ 1 ____ 1 ____ ns tCK HZ Clo ck Hig h to Outp ut Hig h-Z 1 3.4 1 3.6 1 4.2 ns tCKL Z Clo ck Hig h to Outp ut Lo w-Z 0.5 ____ 0.5 ____ 0.5 ____ ns 5.0 ____ 6.0 ____ 7.5 ____ Port-to-Port Delay tCO Clo ck-to -Clo ck Offse t ns 5 626 tb l 11 NOTES: 1. The Pipelined output parameters (t CYC2, tCD2) apply to either or both left and right ports when FT/PIPEX = VIH. Flow-through parameters (tCYC1, tCD1) apply when FT/PIPEX = VIL for that port. 2. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE) and FT/PIPE. FT/PIPE should be treated as a DC signal, i.e. steady state during operation. 3. These values are valid for either level of V DDQ (3.3V/2.5V). See page 5 for details on selecting the desired operating voltage levels for each port. 4. 166MHz Industrial Temperature not available in BF-208 package. 5. This speed grade available when VDDQ = 3.3.V for a specific port (i.e., OPTx = VIH). This speed grade available in BC-256 package only. 6.42 11 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Read Cycle for Pipelined Operation (ADS Operation) (FT/PIPE'X' = V IH)(2) tCYC2 tCH2 tCL2 CLK CE0 tSC tSC tHC tHC (3) CE1 tSB tSB tHB BEn tHB (5) R/W tSW tHW tSA tHA (4) ADDRESS An An + 1 (1 Latency) An + 2 tDC tCD2 DATAOUT Qn tCKLZ OE An + 3 Qn + 1 Qn + 2 (5) (1) tOHZ tOLZ (1) tOE 5626 drw 06 Timing Waveform of Read Cycle for Flow-through Output (FT/PIPE"X" = VIL)(2,6) tCYC1 tCH1 tCL1 CLK CE0 tSC tSC tHC tHC (3) CE1 tSB tHB BEn tSB tHB (5) R/W tSW tHW tSA (4) ADDRESS tHA An An + 1 tCD1 DATAOUT An + 2 tCKHZ Qn Qn + 2 (5) Qn + 1 tCKLZ OE An + 3 tDC tOHZ tOLZ tDC (1) tOE NOTES: 1. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge. 2. ADS = VIL, CNTEN and REPEAT = VIH. 3. The output is disabled (High-Impedance state) by CE0 = VIH, CE1 = VIL, BEn = VIH following the next rising edge of the clock. Refer to Truth Table 1. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. If BEn was HIGH, then the appropriate Byte of DATA OUT for Qn + 2 would be disabled (High-Impedance state). 6. "x" denotes Left or Right port. The diagram is with respect to that port. 6.42 12 5626 drw 07 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of a Multi-Device Pipelined Read(1,2) tCYC2 tCH2 tCL2 CLK tSA tHA A0 ADDRESS(B1) tSC tHC CE0(B1) tSC tHC tCD2 tCD2 tCKHZ Q0 DATAOUT(B1) tSA A0 tSC Q3 tCKLZ tDC tCKHZ tHA A6 A5 A4 A3 A2 A1 tSC CE0(B2) tCD2 Q1 tDC ADDRESS(B2) A6 A5 A4 A3 A2 A1 tHC tHC tCD2 DATAOUT(B2) tCKHZ tCD2 Q4 Q2 tCKLZ tCKLZ 5626 drw 08 Timing Waveform of a Multi-Device Flow-Through Read(1,2) tCH1 tCYC1 tCL1 CLK tSA A0 ADDRESS(B1) CE0(B1) tHA tSC A6 A5 A4 A3 A2 A1 tHC tSC tHC tCD1 tCD1 D0 DATAOUT(B1) tCKHZ tCD1 D3 tCKLZ tDC (1) D5 tCKHZ (1) tCKLZ (1) tHA A0 ADDRESS(B2) tCD1 D1 tDC tSA (1) A1 A6 A5 A4 A3 A2 tSC tHC CE0(B2) tSC tHC tCD1 DATAOUT(B2) tCKLZ (1) tCKHZ (1) tCD1 D2 tCKLZ (1) tCKHZ (1) D4 5626 drw 09 NOTES: 1. B1 Represents Device #1; B2 Represents Device #2. Each Device consists of one IDT70V7599 for this waveform, and are setup for depth expansion in this example. ADDRESS(B1) = ADDRESS(B2) in this situation. 2. BEn, OE, and ADS = VIL; CE1(B1), CE1(B2), R/W, CNTEN, and REPEAT = VIH. 6.42 13 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Port A Write to Pipelined Port B Read(1,2,4) CLK"A" tSW tHW tSA tHA R/W"A" BANK ADDRESS AND ADDRESS"A" An tSD DATAIN"A" tHD Dn tCO(3) CLK"B" tCD2 R/W"B" BANK ADDRESS AND ADDRESS "B" tSW tHW tSA tHA An DATAOUT"B" Dn tDC 5626 drw 10 NOTES: 1. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 2. OE = VIL for Port "B", which is being read from. OE = VIH for Port "A", which is being written to. 3. If tCO < minimum specified, then operations from both ports are INVALID. If tCO ≥ minimum, then data from Port "B" read is available on first Port "B" clock cycle (ie, time from write to valid read on opposite port will be tCO + tCYC2 + tCD2). 4. All timing is the same for Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A" Timing Waveform with Port-to-Port Flow-Through Read(1,2,4) CLK "A" tSW tHW R/W "A" tSA BANK ADDRESS AND ADDRESS "A" DATAIN "A" tHA An tSD tHD Dn tCO(3) CLK "B" tCD1 R/W "B" BANK ADDRESS AND ADDRESS "B" tSW tHW tSA tHA An DATAOUT "B" Dn tDC tDC 5626 drw 11 NOTES: 1. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 2. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to. 3. If tCO < minimum specified, then operations from both ports are INVALID. If tCO ≥ minimum, then data from Port "B" read is available on first Port "B" clock cycle (i.e., time from write to valid read on opposite port will be tCO + tCD1). 4. All timing is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A". 6.42 14 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Pipelined Read-to-Write-to-Read tCYC2 (OE = V IL)(2) tCH2 tCL2 CLK CE0 tSC tHC tSB tHB CE1 BEn tSW tHW R/W (3) ADDRESS tSW tHW An tSA tHA An +1 An + 2 An + 3 An + 2 An + 4 tSD t HD DATAIN Dn + 2 tCD2 (1) tCKHZ tCKLZ tCD2 Qn + 3 Qn DATAOUT READ NOP (4) WRITE READ 5626 drw 12 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. "NOP" is "No Operation". 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. Timing Waveform of Pipelined Read-to-Write-to-Read (OE Controlled)(2) tCYC2 tCH2 tCL2 CLK CE0 tSC tHC tSB tHB CE1 BEn tSW tHW R/W tSW tHW (3) ADDRESS An tSA tHA An +1 An + 2 tSD DATAIN Dn + 2 tCD2 (1) Qn DATAOUT An + 3 An + 4 An + 5 tHD Dn + 3 tCKLZ tCD2 Qn + 4 (4) tOHZ OE READ WRITE READ 5626 drw 13 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE 0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. This timing does not meet requirements for fastest speed grade. This waveform indicates how logically it could be done if timing so allows. 6.42 15 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = VIL)(2) tCH1 tCYC1 tCL1 CLK CE0 tSC tHC CE1 tSB tHB BEn tSW tHW R/W tSW tHW (3) ADDRESS tSA An tHA An +1 An + 2 An + 4 An + 3 An + 2 tSD tHD DATAIN Dn + 2 tCD1 (1) tCD1 Qn DATAOUT t CD1 tCD1 Qn + 1 tDC tCKLZ tCKHZ READ NOP (4) Qn + 3 tDC READ WRITE 5626 drw 14 Timing Waveform of Flow-Through Read-to-Write-to-Read (OE Controlled)(2) tCYC1 tCH1 tCL1 CLK CE0 tSC tHC CE1 tSB tHB BEn tSW tHW tSW tHW R/W (3) An tSA tHA ADDRESS An +1 DATAIN (1) DATAOUT An + 2 tSD tHD An + 3 Dn + 2 Dn + 3 tDC tCD1 An + 4 tOE tCD1 Qn tCKLZ tOHZ An + 5 tCD1 Qn + 4 tDC OE READ WRITE READ 5626 drw 15 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. 6.42 16 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Pipelined Read with Address Counter Advance(1) tCH2 tCYC2 tCL2 CLK tSA tHA An ADDRESS tSAD tHAD ADS tSAD tHAD CNTEN tSCN tHCN tCD2 DATAOUT Qx - 1(2) Qn + 2(2) Qn + 1 Qn Qx Qn + 3 tDC READ EXTERNAL ADDRESS READ WITH COUNTER COUNTER HOLD READ WITH COUNTER 5626 drw 16 Timing Waveform of Flow-Through Read with Address Counter Advance (1) tCH1 tCYC1 tCL1 CLK tSA ADDRESS tHA An tSAD tHAD ADS tSAD tHAD tSCN tHCN CNTEN tCD1 DATAOUT Qx(2) Qn Qn + 1 Qn + 2 Qn + 3(2) Qn + 4 tDC READ EXTERNAL ADDRESS READ WITH COUNTER COUNTER HOLD READ WITH COUNTER 5626 drw 17 NOTES: 1. CE 0, OE, BEn = VIL; CE1, R/W, and REPEAT = V IH. 2. If there is no address change via ADS = V IL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then the data output remains constant for subsequent clocks. 6.42 17 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Write with Address Counter Advance (Flow-through or Pipelined Inputs)(1,6) tCH2 tCYC2 tCL2 CLK tSA tHA An ADDRESS INTERNAL(3) ADDRESS An(5) An + 2 An + 1 An + 4 An + 3 tSAD tHAD ADS tSCN tHCN CNTEN tSD tHD Dn + 1 Dn DATAIN WRITE EXTERNAL ADDRESS Dn + 1 Dn + 4 Dn + 3 Dn + 2 WRITE WRITE WITH COUNTER COUNTER HOLD WRITE WITH COUNTER 5626 drw 18 Timing Waveform of Counter Repeat for Flow Through Mode(2,6,7) tCYC2 CLK tSA tHA An ADDRESS INTERNAL(3) ADDRESS An+2 An+1 An An+2 An An+1 An+2 An+2 tSAD tHAD ADS tSW tHW R/W tSCN tHCN CNTEN REPEAT (4) tSRPT tHRPT tSD tHD DATAIN D0 D3 D2 D1 tCD1 An DATAOUT WRITE TO ADS ADDRESS An ADVANCE COUNTER WRITE TO An+1 ADVANCE COUNTER WRITE TO An+2 HOLD COUNTER WRITE TO An+2 REPEAT READ LAST ADS ADDRESS An An+1 An+2 An+2 , ADVANCE COUNTER READ An+1 ADVANCE COUNTER READ An+2 HOLD COUNTER READ An+2 5626 drw 19 NOTES: 1. CE0, BEn, and R/W = VIL; CE1 and REPEAT = VIH. 2. CE0, BEn = VIL; CE1 = VIH. 3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH. 4. No dead cycle exists during REPEAT operation. A READ or WRITE cycle may be coincidental with the counter REPEAT cycle: Address loaded by last valid ADS load will be accessed. For more information on REPEAT function refer to Truth Table II. 5. CNTEN = VIL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’Address is written to during this cycle. 6. The counter includes bank address and internal address. The counter will advance across bank boundaries. For example, if the counter is in Bank 0, at address FFFh, and is advanced one location, it will move to address 0h in Bank 1. By the same token, the counter at FFFh in Bank 63 will advance to 0h in Bank 0. 7. For Pipelined Mode user should add 1 cycle latency for outputs as per timing waveform of read cycle for pipelined operations. 6.42 18 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Functional Description The IDT70V7599 is a high-speed 128Kx36 (4 Mbit) synchronous Bank-Switchable Dual-Ported SRAM organized into 64 independent 2Kx36 banks. Based on a standard SRAM core instead of a traditional true dual-port memory core, this bank-switchable device offers the benefits of increased density and lower cost-per-bit while retaining many of the features of true dual-ports. These features include simultaneous, random access to the shared array, separate clocks per port, 166 MHz operating speed, full-boundary counters, and pinouts compatible with the IDT70V3599 (128Kx36) dual-port family. The two ports are permitted independent, simultaneous access into separate banks within the shared array. Access by the ports into specific banks are controlled by the bank address pins under the user's direct control: each port can access any bank of memory with the shared array that is not currently being accessed by the opposite port (i.e., BA0L - BA5L ≠ BA0R - BA5R). In the event that both ports try to access the same bank at the same time, neither access will be valid, and data at the two specific addresses targeted by the ports within that bank may be corrupted (in the case that either or both ports are writing) or may result in invalid output (in the case that both ports are trying to read). The IDT70V7599 provides a true synchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges interface. Registered inputs provide minimal setup and hold times on address, data and all critical control inputs. An asynchronous output enable is provided to ease asynchronous bus interfacing. Counter enable inputs are also provided to stall the operation of the address counters for fast interleaved memory applications. A HIGH on CE0 or a LOW on CE1 for one clock cycle will power down the internal circuitry on each port (individually controlled) to reduce static power consumption. Dual chip enables allow easier banking of multiple IDT70V7599S for depth expansion configurations. Two cycles are required with CE0 LOW and CE1 HIGH to read valid data on the outputs. Depth and Width Expansion The IDT70V7599 features dual chip enables (refer to Truth Table I) in order to facilitate rapid and simple depth expansion with no requirements for external logic. Figure 4 illustrates how to control the various chip enables in order to expand two devices in depth. The IDT70V7599 can also be used in applications requiring expanded width, as indicated in Figure 4. Through combining the control signals, the devices can be grouped as necessary to accommodate applications needing 72-bits or wider. BA6(1) IDT70V7599 CE0 CE1 CE1 VDD CE1 IDT70V7599 VDD CE1 CE0 CE0 Control Inputs CE0 Control Inputs Control Inputs IDT70V7599 IDT70V7599 Control Inputs 5626 drw 20 Figure 4. Depth and Width Expansion with IDT70V7599 BE, R/W, OE, CLK, ADS, REPEAT, CNTEN NOTE: 1. In the case of depth expansion, the additional address pin logically serves as an extension of the bank address. Accesses by the ports into specific banks are controlled by the bank address pins under the user's direct control: each port can access any bank of memory within the shared array that is not currently being accessed by the opposite port (i.e., BA0L - BA6L ≠ BA0R - BA6R). In the event that both ports try to access the same bank at the same time, neither access will be valid, and data at the two specific addresses targeted by the parts within that bank may be corrupted (in the case that either or both parts are writing) or may result in invalid output (in the case that both ports are trying to read). 6.42 19 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges JTAG Timing Specifications tJF tJCL tJCYC tJR tJCH TCK Device Inputs(1)/ TDI/TMS tJS Device Outputs(2)/ TDO tJDC tJH tJRSR tJCD TRST , 5626 drw 21 tJRST Figure 5. Standard JTAG Timing NOTES: 1. Device inputs = All device inputs except TDI, TMS, TRST, and TCK. 2. Device outputs = All device outputs except TDO. JTAG AC Electrical Characteristics(1,2,3,4) 70V7599 Symbol Parameter Min. Max. Units tJCYC JTAG Clock Input Period 100 ____ ns 40 ____ ns 40 ____ ns (1) tJCH tJCL JTAG Clock HIGH JTAG Clock Low tJR JTAG Clock Rise Time ____ 3 ns tJF JTAG Clock Fall Time ____ 3(1) ns 50 ____ ns JTAG Reset Recovery 50 ____ ns tJCD JTAG Data Output ____ 25 ns tJDC JTAG Data Output Hold 0 ____ ns tJS JTAG Setup 15 ____ ns 15 ____ tJRST tJRSR tJH JTAG Reset JTAG Hold ns 5626 tbl 12 NOTES: 1. Guaranteed by design. 2. 30pF loading on external output signals. 3. Refer to AC Electrical Test Conditions stated earlier in this document. 4. JTAG operations occur at one speed (10MHz). The base device may run at any speed specified in this datasheet. 6.42 20 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges Identification Register Definitions Instruction Field Value Revision Number (31:28) Description 0x0 Reserved for version number IDT Device ID (27:12) 0x308 Defines IDT part number IDT JEDEC ID (11:1) 0x33 Allows unique identification of device vendor as IDT ID Register Indicator Bit (Bit 0) 1 Indicates the presence of an ID register 5626 tbl 13 Scan Register Sizes Register Name Bit Size Instruction (IR) 4 Bypass (BYR) 1 Identification (IDR) Boundary Scan (BSR) 32 Note (3) 5626 tbl 14 System Interface Parameters Instruction Code Description EXTEST 0000 Forces contents of the bound ary scan cells onto the device outputs (1) . Places the boundary scan registe r (BSR) between TDI and TDO. BYPASS 1111 Places the bypass registe r (BYR) between TDI and TDO. IDCODE 0010 Loads the ID register (IDR) with the vendor ID code and places the register between TDI and TDO. 0100 Places the bypass register (BYR) between TDI and TDO. Forces all device output drivers to a High-Z state. HIGHZ Uses BYR. Forces contents of the bound ary scan cells onto the device outputs. Places the bypass registe r (BYR) between TDI and TDO. CLAMP 0011 SAMPLE/PRELOAD 0001 Places the boundary scan registe r (BSR) between TDI and TDO. SAMPLE allows data from device inputs (2) and outputs (1) to be captured in the boundary scan cells and shifted serially through TDO. PRELOAD allows data to be input serially into the b oundary scan cells via the TDI. All other codes Several combinations are reserved. Do not use codes other than those identified above. RESERVED NOTES: 1. Device outputs = All device outputs except TDO. 2. Device inputs = All device inputs except TDI, TMS, TRST, and TCK. 3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local IDT sales representative. 6.42 21 5626 tbl 15 IDT70V7599S High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges Ordering Information IDT XXXXX A 999 A A Device Type Power Speed Package Process/ Temperature Range Blank I Commercial (0°C to +70°C) Industrial (-40°C to +85°C) BF DR BC 208-pin fpBGA (BF-208) 208-pin PQFP (DR-208) 256-pin BGA (BC-256) 200 166 133 Commercial Only(1) Commercial & Industrial(2) Commercial & Industrial S Standard Power Speed in Megahertz 70V7599 4Mbit (128K x 36-Bit) Synchronous Bank-Switchable Dual-Port RAM 5626 drw 22 NOTES: 1. Available in BC-256 package only. 2. Industrial Temperature at 166Mhz not available in BF-208 package. Datasheet Document History: 1/5/00: 10/19/01: 03/18/02: 12/4/02: Initial Public Offering Page 2, 3 & 4 Added date revision for pin configurations Page 9 Changed ISB3 values for commercial and industrial DC Electrical Characteristics Page 11 Changed tOE value in AC Electrical Characteristics, please refer to Errata #SMEN-01-05 Page 20 Increased tJCD from 20ns to 25ns, please refer to Errata #SMEN-01-04 Page 1 & 22 Replaced TM logo with ® logo Page 1, 9, 11 & 22 Added 200MHz specification Page 9 Tightened power numbers in DC Electrical Characteristics Page 14 Changed waveforms to show INVALID operation if tCO < minimum specified Page 1 - 22 Removed "Preliminary" status Page 9, 11 & 22 Designated 200 Mhz speed grade available in BC-256 package only. 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