Fuji ESAC85-009R Schottky barrier diode Datasheet

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ESAC85-009R
FUJI Diode
Schottky Barrier Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Symbols
Conditions
Ratings
Units
100
V
90
V
Repetitive peak surge reverse voltage
VRSM
Repetitive peak reverse voltage
VRRM
-
Io
50Hz Square wave duty =1/2
Tc = 109˚C
10 *
A
Sine wave, 10ms 1shot
80
A
Average output current
Non-repetitive forward surge current**
Operating junction temperature
Storage temperature
tw=500ns, duty=1/40
IFSM
Tj
-
150
˚C
Tstg
-
-40 to +150
˚C
Conditions
Maximum
Units
Note* Out put current of center tap full wave connection.
Note** Rating per element
Electrical characteristics
Item
(at Ta=25˚C unless otherwise specified.)
Symbols
Forward voltage***
VF
IF = 4A
0.9
V
Reverse current***
IR
VR =VRRM
5
mA
Thermal resistance
Rth(j-c)
Junction to case
3
˚C/W
Conditions
Maximum
Units
Recommended torque
0.3 to 0.5
N•m
-
2
g
Note*** Rating per element
Mechanical characteristics
Item
Mounting torque
Approximate mass
1
ESAC85-009R
FUJI Diode
http://www.fujisemi.com
Outline Drawings [mm]
009
009
2
ESAC85-009R
FUJI Diode
http://www.fujisemi.com
Forward Characteristic
(typ.)
Reverse Characteristic
(typ.)
102
Tj=150℃
Tj=125℃
10
1
10
(mA)
Forward Current (A)
Tj=100℃
Reverse Current
Tj=150℃
Tj=125℃
Tj=100℃
Tj=25℃
100
10-1
IR
IF
1
Tj=25℃
10-2
10-3
0.1
0.0
0
0.2
0.4
0.6
VF
0.8
1.0
1.2
Forward Voltage
1.4
1.6
10
20
30
1.8
VR
(V)
40
50
60
70
Reverse Voltage
80
Reverse Power Dissipation
Forward Power Dissipation (max.)
90
100
110
(V)
(max.)
20
8
360°
360°
7
DC
VR
I0
α
(W)
2
Reverse Power Dissipation
(W)
Forward Power Dissipation
5
WF
λ
6
Square wave λ=60°
Square wave λ=120°
4
Sine wave λ=180°
Square wave λ=180°
DC
PR
3
15
10
α=180°
5
1
Per 1element
0
0.0
0
0.5
1.0
Io
1.5
2.0
2.5
3.0
3.5
Average Output Current
4.0
4.5
5.0
5.5
0
(A)
20
VR
3
40
60
Reverse Voltage
80
(V)
100
ESAC85-009R
FUJI Diode
http://www.fujisemi.com
Current Derating
(Io-Tc)
Junction Capacitance Characteristic (typ.)
(max.)
1000
160
150
140
DC
120
110
Square wave λ=180°
100
Square wave λ=120°
100
Cj
Case Temperature
Sine wave λ=180°
Junction Capacitance (pF)
(℃)
130
Tc
90
Square wave λ=60°
360°
80
I0
70
VR=45V
λ
60
0
2
Io
4
6
8
Average Output Current
10
12
10
14
10
(A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Surge Capability (max.)
100
IFSM
Peak Half - Wave Current
(A)
1000
10
1
10
100
VR
1 00
Number of Cycles at 50Hz
4
Reverse Voltage (V)
ESAC85-009R
FUJI Diode
http://www.fujisemi.com
Transient Thermal Impedance (max.)
Transient Thermal Impedance
(°C/W)
102
101
Rth j-c: 3 ℃/W
100
10-1
10-2
10-1
100
T
5
Time
101
(s)
102
ESAC85-009R
FUJI Diode
http://www.fujisemi.com
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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