IDP30E120 IDB30E120 Preliminary data Fast Switching EmConDiode Product Summary Feature 1200 V IF 30 A VF 1.65 V Tjmax 150 °C VRRM 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge P-TO220-3.SMD Low forward voltage P-TO220-2-2. Easy paralleling Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3 IDP30E120 P-TO220-2-2. Q67040-S4390 D30E120 C A - IDB30E120 P-TO220-3.SMD Q67040-S4383 D30E120 NC C A Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continous forward current IF A TC=25°C 50 TC=90°C 30 Surge non repetitive forward current IFSM 102 IFRM 76.5 TC=25°C, tp =10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation W Ptot TC=25°C 138 TC=90°C 66 Operating and storage temperature Soldering temperature Tj , Tstg TS 1.6mm(0.063 in.) from case for 10s Page 1 -55...+150 260 °C °C 2001-12-12 IDP30E120 IDB30E120 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.9 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 1) - 35 - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current µA IR VR =1200V, Tj=25°C - - 100 VR =1200V, Tj=150°C - - 2500 Forward voltage drop V VF IF =30A, Tj=25°C - 1.65 2.15 IF =30A, Tj=150°C - 1.7 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-12-12 IDP30E120 IDB30E120 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns trr VR =800V, IF =30A, diF /dt=850A/µs, Tj=25°C - 243 - VR =800V, IF =30A, diF /dt=850A/µs, Tj=125°C - 355 - VR =800V, IF =30A, diF /dt=850A/µs, Tj=150°C - 380 - Peak reverse current A Irrm VR =800V, IF = 30 A, diF /dt=850A/µs, Tj =25°C - 23.7 - VR =800V, IF =30A, diF/dt=850A/µs, Tj =125°C - 28.3 - VR =800V, IF =30A, diF/dt=850A/µs, Tj =150°C - 29.5 - Reverse recovery charge nC Qrr VR =800V, IF =30A, diF /dt=850A/µs, Tj=25°C - 2630 - VR =800V, IF =30A, diF/dt=850A/µs, Tj =125°C - 4700 - VR =800V, IF =30A, diF/dt=850A/µs, Tj =150°C - 5200 - VR =800V, IF =30A, diF /dt=850A/µs, Tj=25°C - 6 - VR =800V, IF =30A, diF /dt=850A/µs, Tj=125°C - 7.4 - VR =800V, IF =30A, diF /dt=850A/µs, Tj=150°C - 7.5 - Reverse recovery softness factor S Page 3 2001-12-12 IDP30E120 IDB30E120 Preliminary data 1 Power dissipation 2 Diode forward current Ptot = f (TC ) IF = f(TC ) parameter: Tj 150°C parameter: Tj 150°C 55 140 W A 120 45 100 40 90 35 IF Ptot 110 80 30 70 25 60 50 20 40 15 30 10 20 5 10 0 25 50 75 °C 100 0 25 150 50 75 °C 100 TC TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF ) VF = f (Tj ) 90 2.4 A 60A V 60 -55°C 25°C 100°C 150°C VF IF 70 150 2 50 1.8 30A 40 30 1.6 15A 20 1.4 10 0 0 0.5 1 1.5 2 V 3 VF Page 4 1.2 -60 -20 20 60 100 °C 160 Tj 2001-12-12 IDP30E120 IDB30E120 Preliminary data 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF /dt) Qrr =f(diF /dt) parameter: VR = 800V, Tj = 125°C parameter: VR = 800V, Tj = 125 °C 1100 6500 ns nC 60A 900 5500 trr 800 Qrr 60A 30A 15A 5000 30A 700 4500 600 4000 500 3500 400 3000 300 200 200 15A 300 400 500 600 700 800 2500 200 A/µs 1000 diF /dt 300 400 500 600 700 800 A/µs 1000 diF /dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(800) parameter: VR = 800V, Tj = 125°C parameter: VR = 800V, Tj = 125°C 18 35 25 60A 30A 15A 14 60A 30A 15A S Irr A 12 20 10 15 8 10 5 200 6 300 400 500 600 700 800 A/µs 1000 diF /dt Page 5 4 200 300 400 500 600 700 800 A/µs 1000 diF /dt 2001-12-12 Preliminary data IDP30E120 IDB30E120 9 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 IDP30E120 K/W Z thJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 0.02 10 -3 0.01 single pulse 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 6 2001-12-12 IDP30E120 IDB30E120 Preliminary data TO-220-2-2 N A P dimensions [mm] symbol E D U H B V F W X J L G max min max A 9.70 10.10 0.3819 0.3976 B 15.30 15.90 0.6024 0.6260 C 0.65 0.85 0.0256 0.0335 D 3.55 3.85 0.1398 0.1516 E 2.60 3.00 0.1024 0.1181 F 9.00 9.40 0.3543 0.3701 G 13.00 14.00 0.5118 0.5512 H 17.20 17.80 0.6772 0.7008 J 4.40 4.80 0.1732 0.1890 K 0.40 0.60 0.0157 0.0236 L 1.05 typ. M 2.54 typ. 0.1 typ. N 4.4 typ. 0.173 typ. P T C M 1.10 1.40 0.41 typ. 0.0433 0.0551 2.4 typ. 0.095 typ. 0.26 typ. U 6.6 typ. V 13.0 typ. 0.51 typ. W 7.5 typ. 0.295 typ. X T [inch] min 0.00 0.40 0.0000 0.0157 K Page 7 2001-12-12 IDP30E120 IDB30E120 Preliminary data TO-220-3-45 (P-TO220SMD) dimensions [mm] symbol min A min max B 9.80 10.00 1.3 typ. 0.3858 0.3937 0.0512 typ. C 1.25 0.0492 D 0.95 1.15 2.54 typ. 0.0374 0.0453 0.1 typ. G 0.72 0.85 5.08 typ. 0.0283 0.0335 0.2 typ. H 4.30 4.50 0.1693 K 1.28 1.40 0.0504 0.0551 L 9.00 9.40 0.3543 0.3701 M N 2.30 2.50 14.1 typ. 0.0906 0.0984 0.5551 typ. P 0.00 0.0000 Q R 3.30 3.90 8° max 0.1299 0.1535 8° max S 1.70 0.0669 T U 0.50 0.65 10.8 typ. 0.0197 0.0256 0.4252 typ. V 1.35 typ. 0.0532 typ. W 6.43 typ. 0.2532 typ. X 4.60 typ. 0.1811 typ. Y 9.40 typ. 0.3701 typ. Z 16.15 typ. 0.6358 typ. E F Page 8 [inch] max 1.75 0.20 2.50 0.0689 0.1772 0.0079 0.0984 2001-12-12 Preliminary data IDP30E120 IDB30E120 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 2001-12-12