FDD4141_F085 P-Channel PowerTrench® MOSFET -40V, -50A, 12.3mΩ Features General Description Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A High performance trench technology for extremely low rDS(on) Qualified to AEC Q101 RoHS Compliant Applications Inverter Power Supplies S D G G S D -P-2A52 K TO (T O -252) D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V -50 -58 (Note 1a) -Pulsed -10.8 A -100 Single Pulse Avalanche Energy EAS Ratings -40 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 337 69 (Note 1a) Operating and Storage Junction Temperature Range 2.4 -55 to +150 mJ W °C Thermal Characteristics RθJC Maximum Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient 1.8 (Note 1a) 52 °C/W Package Marking and Ordering Information Device Marking FDD4141 Device FDD4141_F085 ©2010 Fairchild Semiconductor Corporation FDD4141_F085 Rev.C Package D-PAK (TO-252) 1 Reel Size 13’’ Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDD4141_F085 P-Channel PowerTrench® MOSFET October 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient -40 V ID = -250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -32V, VGS = 0V -1 μA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA -3 V -29 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250μA, referenced to 25°C 5.8 VGS = -10V, ID = -12.7A 10.1 12.3 VGS = -4.5V, ID = -10.4A 14.5 18.0 VGS = -10V, ID = -12.7A, TJ = 125°C 15.3 18.7 rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance -1 VDS = -5V, ID = -12.7A -1.8 mV/°C 38 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz 2085 2775 pF 360 480 pF 210 310 pF Ω 4.6 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to -10V Qg Total Gate Charge VGS = 0V to -5V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -20V, ID = -12.7A, VGS = -10V, RGEN = 6Ω VDD = -20V, ID = -12.7A 10 19 7 13 ns ns 38 60 ns 15 27 ns 36 50 nC 19 27 nC 7 nC 8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -12.7A (Note 2) IF = -12.7A, di/dt = 100A/μs -0.8 -1.2 V 29 44 ns 26 40 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 52°C/W when mounted on a 1 in2 pad of 2 oz copper b) 100°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V. ©2010 Fairchild Semiconductor Corporation FDD4141_F085 Rev.C 2 www.fairchildsemi.com FDD4141_F085 P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 100 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 80 VGS = -4.5V VGS = -4V 60 VGS = -10V 40 VGS = -3.5V 20 VGS = -3V 0 0 1 2 3 4 3.5 3.0 VGS = -3.5V 2.5 VGS = -4V 2.0 1.5 VGS = -4.5V 1.0 VGS = -10V 0.5 0 5 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics rDS(on), DRAIN TO 1.0 0.8 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.2 100 ID = -12.7A PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 45 35 25 TJ = 125oC 15 TJ = 25oC 5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 100 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) 80 55 ID = -12.7A VGS = -10V 1.4 0.6 -75 40 60 -ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VGS = -3V 80 VDS = -5V 60 40 TJ = 150oC 20 TJ = 25oC TJ = -55oC 0 1 2 3 4 VGS = 0V 10 TJ = 150oC 1 TJ = 25oC 0.1 0.01 TJ = -55oC 1E-3 0.0 5 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2010 Fairchild Semiconductor Corporation FDD4141_F085 Rev.C 3 1.2 www.fairchildsemi.com FDD4141_F085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10000 -VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = -12.7A CAPACITANCE (pF) 8 VDD = -15V 6 VDD = -20V VDD = -10V 4 Ciss 1000 Coss 2 f = 1MHz VGS = 0V 100 0.1 0 0 8 16 24 32 40 1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 60 -ID, DRAIN CURRENT (A) 30 -IAS, AVALANCHE CURRENT(A) 40 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 10 TJ = 25oC TJ = 125oC 50 40 VGS = -4.5V 30 VGS = -10V Limited by Package 20 10 o RθJC = 1.8 C/W 1 0.01 0.1 1 10 100 0 25 1000 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 10000 P(PK), PEAK TRANSIENT POWER (W) 100 -ID, DRAIN CURRENT (A) Crss 100us 10 1ms 10ms 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 0.1 SINGLE PULSE TJ = MAX RATED TC = 25oC 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) DC 100 FOR TEMPERATURES o ABOVE 25SINGLE C DERATE PEAK PULSE o CURRENTRAS FOLLOWS: = 1.8 C/W θ JC 150 – T C -----------------------I = I25 125 1000 TC = 25oC 100 50 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 2 10 10 3 10 t, PULSE WIDTH (s) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDD4141_F085 Rev.C VGS = -10V 4 www.fairchildsemi.com FDD4141_F085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.005 -5 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE o RθJC = 1.8 C/W -4 10 -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDD4141_F085 Rev.C 5 www.fairchildsemi.com FDD4141_F085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 ©2010 Fairchild Semiconductor Corporation FDD4141_F085 Rev.C 6 www.fairchildsemi.com FDD4141_F085 P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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