Harris HA-2839 600mhz, very high slew rate operational amplifier Datasheet

Semiconductor
HA-2839
T
C
ODU
R
P
E
LET A-2539
O
S
H
OB See
600MHz, Very High Slew Rate
Operational Amplifier
November 1996
Features
Description
• Low Supply Current. . . . . . . . . . . . . . . . . . . . . . . . 13mA
The HA-2839 is a wideband, very high slew rate, operational
amplifier featuring superior speed and bandwidth characteristics. Bipolar construction, coupled with dielectric isolation,
delivers outstanding performance in circuits with a closed
loop gain of 10 or greater.
• Very High Slew Rate . . . . . . . . . . . . . . . . . . . . . 625V/µs
• Open Loop Gain . . . . . . . . . . . . . . . . . . . . . . . . . . 25kV/V
• Wide Gain-Bandwidth (AV ≥ 10) . . . . . . . . . . . . 600MHz
A 625V/µs slew rate and a 600MHz gain bandwidth product
ensure high performance in video and RF amplifier designs.
Differential gain and phase are a low 0.03% and 0.03
degrees respectively, making the HA-2839 ideal for video
applications. A full ±10V output swing, high open loop gain,
and outstanding AC parameters, make the HA-2839 an
excellent choice for high speed Data Acquisition Systems.
• Full Power Bandwidth . . . . . . . . . . . . . . . . . . . . . 10MHz
• Low Offset Voltage. . . . . . . . . . . . . . . . . . . . . . . . .0.6mV
• Differential Gain/Phase . . . . . . . . . 0.03%/0.03 Degrees
• Enhanced Replacement for EL2039
Applications
The HA-2839 is available in commercial and industrial
temperature ranges, and a choice of packages. For military
grade product, refer to the HA-2839/883 data sheet.
• Pulse and Video Amplifiers
• Wideband Amplifiers
Part Number Information
• High Speed Sample-Hold Circuits
• RF Oscillators
PART NUMBER
TEMP.
RANGE (oC)
PKG.
NO.
PACKAGE
HA1-2839-5
0 to 75
14 Ld CERDIP
F14.3
HA3-2839-5
0 to 75
14 Ld PDIP
E14.3
HA3-2839-9
-40 to 85
14 Ld PDIP
E14.3
Pinout
HA-2839
(CERDIP, PDIP)
TOP VIEW
+IN 1
NC 2
14 -IN
+
-
13 NC
V- 3
12 NC
NC 4
11 NC
NC 5
10 V+
NC 6
9 NC
NC 7
8 OUT
NOTE: No Connection (NC) pins may be tied to a ground
plane for better isolation and heat dissipation.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© Harris Corporation 1996
3-1
File Number
2841.3
HA-2839
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 35V
Differential Input Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Thermal Resistance (Typical, Note 2)
θJA (oC/W) θJC (oC/W)
CERDIP Package . . . . . . . . . . . . . . . .
95
40
PDIP Package . . . . . . . . . . . . . . . . . . .
80
N/A
Maximum Internal Quiescent Power Dissipation (Note 1)
Maximum Junction Temperature (Ceramic Package) . . . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
Operating Conditions
Temperature Range
HA-2839-5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC
HA-2839-9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
Recommended Supply Voltage Range. . . . . . . . . . . . . ±7V to ±15V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Maximum power dissipation with load conditions must be designed to maintain the maximum junction temperature below 175oC for
ceramic packages and below 150oC for plastic packages.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
VSUPPLY = ±15V, RL = 1kΩ, CL ≤ 10pF, Unless Otherwise Specified
HA-2839-5, -9
TEMP. (oC)
MIN
TYP
MAX
UNITS
25
-
0.6
2
mV
Full
-
2
6
mV
Average Offset Voltage Drift
Full
-
20
-
µV/oC
Bias Current (Note 13)
25
-
5
14.5
µA
PARAMETER
INPUT CHARACTERISTICS
Offset Voltage (Note 13)
Full
-
8
20
µA
25
-
1
4
µA
Full
-
-
8
µA
Input Resistance
25
-
10
-
kΩ
Input Capacitance
25
-
1
-
pF
Common Mode Range
Full
±10
-
-
V
Input Noise Voltage (f = 1kHz, RSOURCE = 0Ω, Note 13)
25
-
6
-
nV ⁄ Hz
Input Noise Current (f = 1kHz, RSOURCE = 10kΩ, Note 13)
25
-
6
-
pA ⁄ Hz
25
20
25
-
kV/V
Full
15
20
-
kV/V
Common-Mode Rejection Ratio (Notes 4, 13)
Full
75
80
-
dB
Minimum Stable Gain
25
10
-
-
V/V
Gain Bandwidth Product (Notes 5, 12, 13)
25
-
600
-
MHz
Output Voltage Swing (Notes 3, 13)
Full
±10
-
-
V
Output Current (Notes 3, 13)
Full
±10
±20
-
mA
Output Resistance
25
-
30
-
Ω
Full Power Bandwidth (Notes 3, 7)
25
8.7
10
-
MHz
Differential Gain (Notes 6, 11)
25
-
0.03
-
%
Differential Phase (Notes 6, 11)
25
-
0.03
-
Degrees
Harmonic Distortion (Notes 6, 13, 14)
25
-
-79
-
dBc
Offset Current
TRANSFER CHARACTERISTICS
Large Signal Voltage Gain (Note 3)
OUTPUT CHARACTERISTICS
3-2
HA-2839
Electrical Specifications
VSUPPLY = ±15V, RL = 1kΩ, CL ≤ 10pF, Unless Otherwise Specified (Continued)
HA-2839-5, -9
TEMP. (oC)
MIN
Rise Time
25
Overshoot
25
Slew Rate (Notes 3, 10, 13)
Settling Time: 10V Step to 0.1%
TYP
MAX
UNITS
-
4
-
ns
-
20
-
%
25
550
625
-
V/µs
25
-
180
-
ns
Supply Current (Note 13)
Full
-
13
15
mA
Power Supply Rejection Ratio (Notes 9, 13)
Full
75
90
-
dB
PARAMETER
TRANSIENT RESPONSE (Note 8)
POWER REQUIREMENTS
NOTES:
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
RL = 1kΩ, VO = ±10V, 0V to ±10V for slew rate.
VCM = ±10V.
VO = 90mV.
AV = +10.
Slew Rate
Full Power Bandwidth guaranteed based on slew rate measurement using: FPBW = --------------------------- , V
= 10V .
2πV PEAK PEAK
Refer to Test Circuit section of data sheet.
VSUPPLY = ±10V to ±20V.
This parameter is not tested. The limits are guaranteed based on lab characterization, and reflect lot-to-lot variation.
Differential gain and phase are measured with a VM700A video tester, using a NTC-7 composite VITS.
AV = +100.
See “Typical Performance Curves” for more information.
VO = 2VP-P, f = 1MHz.
Test Circuit and Waveforms
IN
+
OUT
-
900Ω
NOTES:
15. VS = ±15V.
100Ω
16. AV = +10.
17. CL < 10pF.
TEST CIRCUIT
INPUT
INPUT
OUTPUT
OUTPUT
Input = 1V/Div.; Output = 5V/Div., 50ns/Div.
Input = 10mV/Div.; Output = 100mV/Div.; 50ns/Div.
LARGE SIGNAL RESPONSE
SMALL SIGNAL RESPONSE
3-3
HA-2839
Test Circuit and Waveforms
V+
(Continued)
0.001µF
NOTES:
18. AV = -10.
19. Load Capacitance should be less than 10pF.
1µF
200Ω
-
INPUT
OUTPUT
+
0.001µF
21. SETTLING POINT (Summing Node) capacitance should be
less than 10pF. For optimum settling time results, it is
recommended that the test circuit be constructed directly onto
the device pins. A Tektronix 568 Sampling Oscilloscope with
S-3A sampling heads is recommended as a settle point monitor.
PROBE
MONITOR
500Ω
20. It is recommended that resistors be carbon composition and
that feedback and summing network ratios be matched to 0.1%.
1µF
V2kΩ
5kΩ
SETTLING
POINT
SETTLING TIME TEST CIRCUIT
Typical Performance Curves
TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified
650
GAIN BANDWIDTH PRODUCT (MHz)
OPEN LOOP
80
60
40
20
0
AVCL = 1000
AVCL = 100
AVCL = 10
0
90
OPEN LOOP
1K
10K
PHASE (DEGREES)
GAIN (dB)
100
180
100K
1M
10M
600
550
500
5
100M
6
7
FIGURE 1. FREQUENCY RESPONSE FOR VARIOUS GAINS
9
10
11
12
13
14
15
FIGURE 2. GAIN BANDWIDTH PRODUCT vs SUPPLY VOLTAGE
750
90
80
650
70
550
CMRR (dB)
GAIN BANDWIDTH PRODUCT (MHz)
8
SUPPLY VOLTAGE (±V)
FREQUENCY (Hz)
450
60
50
40
350
30
250
-60
-40
-20
0
20
40
60
80
100
120
20
100
140
TEMPERATURE (oC)
1K
10K
100K
FREQUENCY (Hz)
FIGURE 3. GAIN BANDWIDTH PRODUCT vs TEMPERATURE
FIGURE 4. CMRR vs FREQUENCY
3-4
1M
10M
HA-2839
Typical Performance Curves
TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified
(Continued)
50
110
100
±PSRR
70
60
50
40
30
20
10
0
100
1K
37.5
30
NOISE VOLTAGE (nV/√Hz)
PSRR (dB)
80
10K
100K
1M
20
NOISE VOLTAGE
10
12.5
0
10
10M
100
1K
0
100K
10K
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 5. PSRR vs FREQUENCY
FIGURE 6. INPUT NOISE vs FREQUENCY
750
700
650
SLEW RATE (V/µs)
700
SLEW RATE (V/µs)
25
NOISE CURRENT
NOISE CURRENT (pA/√Hz)
90
650
600
550
600
500
550
-60
450
-40
-20
0
20
40
60
80
100
120
5
140
6
7
8
TEMPERATURE (oC)
9
10
11
12
13
14
15
14
15
SUPPLY VOLTAGE (±V)
FIGURE 7. SLEW RATE vs TEMPERATURE
FIGURE 8. SLEW RATE vs SUPPLY VOLTAGE
8.0
14
2.5
6.0
BIAS CURRENT
1.5
OFFSET VOLTAGE
5.0
0.5
4.0
SUPPLY CURRENT (mA)
7.0
INPUT OFFSET VOLTAGE (mV)
INPUT BIAS CURRENT (µA)
3.5
12
-55oC 125oC
25oC
10
8
-0.5
3.0
-60
6
-40 -20
0
20
40
60
80
100
120 140
5
TEMPERATURE (oC)
6
7
8
9
10
11
12
13
SUPPLY VOLTAGE (±V)
FIGURE 9. INPUT OFFSET VOLTAGE AND INPUT BIAS
CURRENT vs TEMPERATURE
FIGURE 10. SUPPLY CURRENT vs SUPPLY VOLTAGE
3-5
HA-2839
Typical Performance Curves
TA = 25oC, VSUPPLY = ±15V, RL = 1kΩ, CL < 10pF, Unless Otherwise Specified
-2.5
±8V, 75Ω
±8V, 150Ω
±15V, 1kΩ
12.5
10
±8V, 1kΩ
OUTPUT SWING (V)
POSITIVE OUTPUT SWING (V)
15
±15V, 150Ω
±15V, 75Ω
7.5
±8V, 1kΩ
5
2.5
-40
-20
0
20
40
60
80
-5
±15V, 75Ω
-7.5
±15V, 150Ω
-10
±15V, 1kΩ
±8V, 150Ω
0
-60
±8V, 75Ω
100
120
-12.5
-60
140
-40
-20
0
TEMPERATURE (oC)
20
40
60
80
100
120
140
TEMPERATURE (oC)
FIGURE 11. POSITIVE OUTPUT SWING vs TEMPERATURE
FIGURE 12. NEGATIVE OUTPUT SWING vs TEMPERATURE
25
-35
20
VSUPPLY = ±15V
-45
15
-55
THD (dBc)
OUTPUT VOLTAGE SWING (VP-P)
(Continued)
10
VSUPPLY = ±8V
5
0
1K
10K
100K
1M
10M
100M
-65
-75
VO = 10VP-P
-85
VO = 2VP-P
100K
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 13. MAXIMUM UNDISTORTED OUTPUT SWING vs
FREQUENCY
VO = 0.5VP-P
VO = 1VP-P
FIGURE 14. TOTAL HARMONIC DISTORTION vs FREQUENCY
THIRD INTERMOD PRODUCT (dBc)
-35
VO = 0.5VP-P
VO = 1VP-P
-45
VO = 2VP-P
-55
-65
VO = 5VP-P
VO = 0.25VP-P
-75
-85
-95
500K
10M
1M
10M
FREQUENCY (Hz)
FIGURE 15. INTERMODULATION DISTORTION vs FREQUENCY (TWO TONE)
3-6
HA-2839
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
65 mils x 52 mils x 19 mils
1650µm x 1310µm x 483µm
Type: Nitride over Silox
Silox Thickness: 12kÅ ±2kÅ
Nitride thickness: 3.5kÅ ±1kÅ
METALLIZATION:
Type: Aluminum, 1% Copper
Thickness: 16kÅ ±2kÅ
TRANSISTOR COUNT:
34
PROCESS:
SUBSTRATE POTENTIAL
High Frequency Bipolar Dielectric Isolation
V-
Metallization Mask Layout
HA-2839
V+
OUT
-IN
+IN
V-
3-7
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