HANBit HMS51232M4G SRAM MODULE 2Mbyte (512K x 32-Bit), 72PIN SIMM, 5V Part No. HMS51232M4G GENERAL DESCRIPTION The HMS51232M4GG is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4-printed circuit board. PD0 to PD3 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible. PIN ASSIGNMENT FEATURES PIN SYMBOL PIN SYMBOL PIN SYMBOL 1 NC 25 DQ13 49 DQ27 2 NC 26 DQ5 50 DQ19 3 PD2 27 DQ14 51 A3 4 PD3 28 DQ6 52 A10 w Easy memory expansion /CE and /OE functions 5 Vss 29 DQ15 53 A4 w All inputs and outputs are TTL-compatible 6 PD0 30 DQ7 54 A11 w Industry-standard pinout 7 PD1 31 Vss 55 A5 w FR4-PCB design 8 DQ0 32 /WE 56 A12 w Part Identification 9 DQ8 33 A15 57 Vcc 10 DQ1 34 A14 58 A13 11 DQ9 35 /CE2 59 A6 12 DQ2 36 /CE1 60 DQ20 13 DQ10 37 /CE4 61 DQ28 14 DQ3 38 /CE3 62 DQ21 15 DQ11 39 A17 63 DQ29 16 Vcc 40 A16 64 DQ22 17 A0 41 /OE 65 DQ30 w Access times : 10, 12, 15, 17 and 20 w High-density 2Mbyte design w High-reliability, high-speed design w Single + 5V ±0.5V power supply - HMS51232M4G : SIMM design OPTIONS MARKING w Timing 10ns access -10 12ns access -12 15ns access -15 18 A7 42 Vss 66 DQ23 17ns access -17 19 A1 43 DQ24 67 DQ31 20ns access -20 20 A8 44 DQ16 68 Vss 21 A2 45 DQ25 69 A18 22 A9 46 DQ17 70 NC 23 DQ12 47 DQ26 71 NC 24 DQ4 48 DQ18 72 NC w Packages 72-pin SIMM M PD0 = Open PD1 = Open PD2 = Vss PD3 = Open 72-Pin SIMM TOP VIEW 1 HANBit Electronics Co.,Ltd. HANBit HMS51232M4G FUNCTIONAL BLOCK DIAGRAM DQ0 - DQ31 A0 - A18 32 19 A0-18 /WE DQ 0-7 U1 /OE /CE /CE1 A0-18 /WE DQ 8-15 U2 /OE /CE /CE2 A0-18 /WE DQ16-23 U3 /OE /CE /CE3 A0-18 /WE /WE /OE /OE DQ24-31 U4 /CE PD0 = Open /CE4 PD1 = Open PD2 = Vss PD3 = Open TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Dout ACTIVE WRITE X L L Din ACTIVE 2 HANBit Electronics Co.,Ltd. HANBit HMS51232M4G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to +7.0V Voltage on Vcc Supply Relative to Vss VCC -0.5V to +7.0V Power Dissipation PD 4W TSTG -65oC to +150oC Voltage on Any Pin Relative to Vss Storage Temperature Operating Temperature TA 0oC to +70oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS ( TA=0 to 70 o C ) SYMBOL MIN TYP. MAX Supply Voltage VCC 4.5V 5.0V 5.5V Ground VSS 0 0 0 Input High Voltage VIH 2.2 - Vcc+0.5V** Input Low Voltage VIL -0.5* - 0.8V PARAMETER * VIL(Min.) = -2.0V (Pulse Width £ 10ns) for I £ 20 mA ** VIH(Max.) = Vcc+2.0V (Pulse Width £ 10ns) for I £ 20 mA DC AND OPERATING CHARACTERISTICS (1)(0oC £ TA £ 70 oC ; Vcc = 5V ± 0.5V ) TEST CONDITIONS PARAMETER Input Leakage Current Output Leakage Current VIN = Vss to Vcc /CE=VIH or /OE =VIH or /WE=VIL VOUT=Vss to VCC SYMBOL MIN MAX UNITS ILI -2 2 mA IL0 -2 2 mA 2.4 - V 0.4 V Output High Voltage VOH = -4.0mA VOH Output Low Voltage VOL = 8.0mA VOL * Vcc=5.0V, Temp=25 oC DC AND OPERATING CHARACTERISTICS (2) DESCRIPTION Power Supply Current: Operating Power Supply Current: Standby TEST CONDITIONS SYMBOL MAX -15 -17 -20 UNIT Min. Cycle, 100% Duty /CE=VIL, VIN=VIH or VIL, IOUT=0mA lCC 170 165 160 mA Min. Cycle, /CE=VIH lSB 50 50 50 mA f=0MHZ, /CE³VCC-0.2V, VIN³ VCC-0.2V or VIN£0.2V lSB1 10 10 10 mA 3 HANBit Electronics Co.,Ltd. HANBit HMS51232M4G CAPACITANCE DESCRIPTION TEST CONDITIONS SYMBOL MAX UNIT VI/O=0V CI/O 8 pF CIN 7 pF Input /Output Capacitance Input Capacitance VIN=0V * NOTE : Capacitance is sampled and not 100% tested AC CHARACTERISTICS (0oC £ TA £ 70 oC ; Vcc = 5V ± 0.5V, unless otherwise specified) TEST CONDITIONS PARAMETER VALUE Input Pulse Level 0.V to 3V Input Rise and Fall Time 3ns Input and Output Timing Reference Levels 1.5V Output Load See below Output Load (A) Output Load (B) for t HZ, tLZ, tWHZ, tOW, tOLZ & tOHZ +5V +5V 480W DOUT 255W 480W DOUT 30pF* 255W 5pF* * Including scope and jig capacitance READ CYCLE PARAMETER -15 -17 -20 SYMBOL UNIT MIN MAX MIN MAX MIN MAX Read Cycle Time tRC 15 - 17 - 20 - ns Address Access Time tAA - 15 - 17 - 20 ns Chip Select to Output tCO - 15 - 17 - 20 ns Output Enable to Output tOE - 7 - 8 - 9 ns Output Enable to Low-Z Output tOLZ 0 - 0 - 0 - ns Chip Enable to Low-Z Output tLZ 3 - 3 - 3 - ns Output Disable to High-Z Output tOHZ 0 7 0 8 0 9 ns Chip Disable to High-Z Output tHZ 0 7 0 8 0 9 ns Output Hold from Address Change tOH 3 - 3 - 3 - ns Chip Select to Power Up Time tPU 0 - 0 - 0 - ns Chip Select to Power Down Time tPD - 15 - 17 - 20 ns 4 HANBit Electronics Co.,Ltd. HANBit HMS51232M4G WRITE CYCLE PARAMETER SYMBOL -15 -17 -20 MIN MAX MIN MAX MIN MAX UNIT Write Cycle Time tWC 15 - 17 - 20 - ns Chip Select to End of Write tCW 12 - 13 - 14 - ns Address Set-up Time tAS 0 - 0 - 0 - ns Address Valid to End of Write tAW 12 - 13 - 14 - ns Write Pulse Width (/OE=High) tWP 12 - 13 - 14 - ns Write Recovery Time (/OE=Low) tWR 0 - 0 - 0 - ns Write to Output High-Z tWZ 0 7 0 8 0 9 ns Data to Write Time Overlap tDW 8 - 9 - 10 - ns Data Hold from Write Time tDH 0 - 0 - 0 - ns End of Write to Output Low-Z tOW 3 - 3 - 3 - ns TIMING DIAGRAMS Please refer to timing diagram chart. FUNCTIONAL DESCRIPTION /CE /WE /OE MODE I/O PIN SUPPLY CURRENT H X* X Not Select High-Z I SB, I SB1 L H H Output Disable High-Z ICC L H L Read DOUT ICC L L X Write DIN ICC Note: X means Don't Care 5 HANBit Electronics Co.,Ltd. HANBit HMS51232M4G PACKAGING INFORMATION SIMM Design 2.54 mm MIN 0.25 mm MAX 1.27 1.27±0.08mm Gold: 1.04±0.10 mm Solder: 0.914±0.10 mm (Solder & Gold Plating Lead) ORDERING INFORMATION Part Number Density Org. Package Component Number Vcc Speed HMS 51232M4G-10 2MByte 512K x 32bit 72 Pin-SIMM 4EA 5V 10ns HMS 51232M4G-12 2MByte 512K x 32bit 72 Pin-SIMM 4EA 5V 12ns HMS 51232M4G-15 2MByte 512K x 32bit 72 Pin-SIMM 4EA 5V 15ns HMS 51232M4G-17 2MByte 512K x 32bit 72 Pin-SIMM 4EA 5V 17ns HMS 51232M4G-20 2MByte 512K x 32bit 72 Pin-SIMM 4EA 5V 20ns 6 HANBit Electronics Co.,Ltd.