HSMC HBAT54S Silicon schottky barrier double diode Datasheet

HI-SINCERITY
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2004.08.26
Page No. : 1/4
MICROELECTRONICS CORP.
HBAT54 Series
Description
SOT-23
Silicon Schottky Barrier Double Diodes
• HBAT54: Single Diode, also available as double diodes.
• HBAT54A: Common Anode.
• HBAT54C: Common Cathode.
• HBAT54S: Series Connected.
Diagram:
3
1
3
2
1
2
HBAT54
HBAT54A
3
3
Features
These diodes feature very low turn-on voltage and fast switching. There is a PN
junction guard ring against excessive voltage such as electronics attic discharges
protects these devices.
1
2
1
2
HBAT54S
HBAT54C
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................................................. -65~+125 °C
Junction Temperature .................................................................................................................................... +125 °C
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 230 mW
• Maximum Voltages and Currents (TA=25°C)
Repetitive Peak Reverse Voltage ....................................................................................................................... 30 V
Forward Continuous Current ......................................................................................................................... 200 mA
Repetitive Peak Forward Current ................................................................................................................. 300 mA
Surge Forward Current (tp<1s)...................................................................................................................... 600 mA
Electrical Characteristics (TA=25°C)
Characteristic
Reverse breakdown Voltage
Forward Voltage
Symbol
Condition
Min.
Max.
Unit
V(BR)
IR=10uA
30
-
V
VF(1)
IF=0.1mA
-
240
mV
VF(2)
IF=1mA
-
320
mV
VF(3)
IF=10mA
-
400
mV
VF(4)
IF=30mA
-
500
mV
VF(5)
IF=100mA
-
1000
mV
Reverse Current
IR
VR=25V
-
2.0
uA
Total Capacitance
CT
VR=1V, f=1MHz
-
10
pF
Reverse Recovery Time
Trr
IF=IR=10mA, RL=100Ω,
measured at IR=1mA
-
5
nS
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2004.08.26
Page No. : 2/4
MICROELECTRONICS CORP.
Characteristics Curve
Diode Capacitance & Reverse-Biased Voltage
Forward Current & Forward Voltage
100
250
Diode Capacitance-Cd (pF)
Forward Current-IF (mA)
200
150
100
10
50
0
1
0
200
400
600
Forward Voltage-VF (mV)
HBAT54, HBAT54A, HBAT54C, HBAT54S
800
1000
0.1
1
10
100
Reverse Biased Voltage-VR (V)
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2004.08.26
Page No. : 3/4
MICROELECTRONICS CORP.
SOT-23 Dimension
DIM
A
B
C
D
G
H
J
K
L
S
V
Marking:
A
Series Code
L
(None,2,3,4)
L 4
Pb Free Mark
3
Pb-Free: " " (Note)
Normal: None
B S
1
V
2
HBAT54: (L4), HBAT54A: (L42), HBAT54C: (L43),
HBAT54S: (L44)
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
G
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
*: Typical, Unit: mm
Pin Style: 1.Anode 2.Cathode
3.Common Connection
C
D
H
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
K
J
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2004.08.26
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245 C ±5 C
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
HBAT54, HBAT54A, HBAT54C, HBAT54S
o
o
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification
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