HI-SINCERITY Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2004.08.26 Page No. : 1/4 MICROELECTRONICS CORP. HBAT54 Series Description SOT-23 Silicon Schottky Barrier Double Diodes • HBAT54: Single Diode, also available as double diodes. • HBAT54A: Common Anode. • HBAT54C: Common Cathode. • HBAT54S: Series Connected. Diagram: 3 1 3 2 1 2 HBAT54 HBAT54A 3 3 Features These diodes feature very low turn-on voltage and fast switching. There is a PN junction guard ring against excessive voltage such as electronics attic discharges protects these devices. 1 2 1 2 HBAT54S HBAT54C Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................................................. -65~+125 °C Junction Temperature .................................................................................................................................... +125 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 230 mW • Maximum Voltages and Currents (TA=25°C) Repetitive Peak Reverse Voltage ....................................................................................................................... 30 V Forward Continuous Current ......................................................................................................................... 200 mA Repetitive Peak Forward Current ................................................................................................................. 300 mA Surge Forward Current (tp<1s)...................................................................................................................... 600 mA Electrical Characteristics (TA=25°C) Characteristic Reverse breakdown Voltage Forward Voltage Symbol Condition Min. Max. Unit V(BR) IR=10uA 30 - V VF(1) IF=0.1mA - 240 mV VF(2) IF=1mA - 320 mV VF(3) IF=10mA - 400 mV VF(4) IF=30mA - 500 mV VF(5) IF=100mA - 1000 mV Reverse Current IR VR=25V - 2.0 uA Total Capacitance CT VR=1V, f=1MHz - 10 pF Reverse Recovery Time Trr IF=IR=10mA, RL=100Ω, measured at IR=1mA - 5 nS HBAT54, HBAT54A, HBAT54C, HBAT54S HSMC Product Specification HI-SINCERITY Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2004.08.26 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Diode Capacitance & Reverse-Biased Voltage Forward Current & Forward Voltage 100 250 Diode Capacitance-Cd (pF) Forward Current-IF (mA) 200 150 100 10 50 0 1 0 200 400 600 Forward Voltage-VF (mV) HBAT54, HBAT54A, HBAT54C, HBAT54S 800 1000 0.1 1 10 100 Reverse Biased Voltage-VR (V) HSMC Product Specification HI-SINCERITY Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2004.08.26 Page No. : 3/4 MICROELECTRONICS CORP. SOT-23 Dimension DIM A B C D G H J K L S V Marking: A Series Code L (None,2,3,4) L 4 Pb Free Mark 3 Pb-Free: " " (Note) Normal: None B S 1 V 2 HBAT54: (L4), HBAT54A: (L42), HBAT54C: (L43), HBAT54S: (L44) Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. G Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25 Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65 *: Typical, Unit: mm Pin Style: 1.Anode 2.Cathode 3.Common Connection C D H 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N K J Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBAT54, HBAT54A, HBAT54C, HBAT54S HSMC Product Specification HI-SINCERITY Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2004.08.26 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HBAT54, HBAT54A, HBAT54C, HBAT54S o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification