PD-97333 RevA Integrated Power Hybrid IC for Appliance Motor Drive Applications IRAM136-0760A Series 5A, 600V with Open Emitter Pins Description International Rectifier's IRAM136-0760A is a 5A, 600V Integrated Power Hybrid IC with Open Emitter pins for advanced Appliance Motor Drives applications such as energy efficient Washing Machine and Refrigerator Compressor Drivers. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low VCE (on) Trench IGBT technology and the industry benchmark 3 phase high voltage, high speed driver (3.3V compatible) in a fully isolated thermally enhanced package. A built-in high precision temperature monitor and over-current protection feature, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a Single in line package (SIP05) with full transfer mold structure and CTI>600 minimizes PCB space and resolves isolation problems to heatsink. Features x x x x x x x x x x x Integrated gate drivers and bootstrap diodes Temperature monitor Protection shutdown pin Low VCE (on) Trench IGBT technology Undervoltage lockout for all channels Matched propagation delay for all channels 3.3V Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power range 0.1~0.5kW / 85~253 Vac Isolation 2000VRMS min and CTI> 600 Absolute Maximum Ratings VCES / VRRM + IGBT/ FW Diode Blocking Voltage 600 Positive Bus Input Voltage 450 V V Io @ TC=25°C RMS Phase Current (Note 1) 5 Io @ TC=100°C RMS Phase Current (Note 1) 3.5 Ipk Maximum Peak Phase Current (Note 2) 5.5 Fp Maximum PWM Carrier Frequency 20 Pd Maximum Power dissipation per IGBT @ TC =25°C 18 W VISO Isolation Voltage (1min) 2000 VRMS TJ (IGBT & Diode & IC) Maximum Operating Junction Temperature TC Operating Case Temperature Range -20 to +100 TSTG Storage Temperature Range -40 to +125 T Mounting torque Range (M3 screw) A kHz +150 0.8 to 1.0 °C Nm Note 1: Sinusoidal Modulation at V+=320V, TJ=150°C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms, TC=25°C, FPWM=16kHz. www.irf.com 1 IRAM136-0760A Internal Electrical Schematic – IRAM136-0760A V+ (13) Q1 D1 Q2 D2 Q3 D3 Q4 D4 Q5 D5 Q6 D6 VRU (17) VRV (19) VRW (21) R1 VB1 (9) C1 R2 R3 U, VS1 (10) VB2 (5) C2 V, VS2 (6) VB3 (1) C3 R4 R5 R6 W, VS3 (2) D7 D8 D9 23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 LO1 16 24 HO1 R9 25 VB1 LO2 15 1 VCC HIN1 (20) 2 HIN1 HIN2 (22) 3 HIN2 HIN3 (23) 4 HIN3 LIN1 (24) Driver IC LO3 14 LIN1 LIN2 LIN3 6 7 5 F ITRIP EN RCIN VSS 8 9 10 11 12 COM 13 LIN2 (25) LIN3 (26) ITRIP (16) FLT/EN (18) R7 R8 VTH (27) VCC (28) C5 C4 VSS (29) 2 www.irf.com IRAM136-0760A Absolute Maximum Ratings (Continued) Symbol Parameter Min Max PBR Peak Units Conditions Bootstrap Resistor Peak Power (Single Pulse) --- 15.0 W VS1,2,3 High side floating supply offset voltage VB1,2,3 - 20 VB1,2,3 +0.3 V VB1,2,3 High side floating supply voltage -0.3 600 V VCC Low Side and logic fixed supply voltage -0.3 20 V VIN Input voltage LIN, HIN, ITrip -0.3 Lower of (VSS+15V) or VCC+0.3V V tP=100μs, TC =100°C ESR / ERJ series Inverter Section Electrical Characteristics @TJ= 25°C Symbol Parameter Min Typ Max V(BR)CES Collector-to-Emitter Breakdown Voltage 600 --- --- V V(BR)CES / T Temperature Coeff. Of Breakdown Voltage --- 0.3 --- V/°C VCE(ON) Collector-to-Emitter Saturation Voltage ICES Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop VBDFM --- 1.7 2.0 --- 2.1 --- --- 5 80 --- 80 --- Units Conditions V A VIN=0V, IC=250μA VIN=0V, IC=250μA (25°C - 150°C) IC=3.5A TJ=25°C, VCC=15V IC=3.5A VIN=0V, V+=600V, TJ=150°C IF=3.5A -- 1.6 2.3 --- 1.4 --- Bootstrap Diode Forward Voltage Drop -- 1.2 --- V IF=1A RBR Bootstrap Resistor Value --- 22 --- TJ=25°C RBR/RBR Bootstrap Resistor Tolerance --- --- ±5 % TJ=25°C www.irf.com V TJ=150°C VIN=0V, V+=600V IF=3.5A, TJ=150°C 3 IRAM136-0760A Inverter Section Switching Characteristics @ TJ= 25°C Symbol Parameter Min Typ Max --- 210 340 Units Conditions EON Turn-On Switching Loss EOFF Turn-Off Switching Loss --- 20 30 ETOT Total Switching Loss --- 245 370 EREC Diode Reverse Recovery energy --- 15 25 tRR Diode Reverse Recovery time --- 135 --- EON Turn-on Switching Loss --- 300 --- EOFF Turn-off Switching Loss --- 50 --- ETOT Total Switching Loss --- 350 --- EREC Diode Reverse Recovery energy --- 30 --- tRR Diode Reverse Recovery time --- 170 --- ns QG Turn-On IGBT Gate Charge --- 9 13 nC RBSOA Reverse Bias Safe Operating Area μJ IC=3.5A, V+=400V VCC=15V, L=1.2mH Energy losses include "tail" and diode reverse recovery See CT1 ns μJ IC=3.5A, V+=400V VCC=15V, L=1.2mH, TJ=150°C Energy losses include "tail" and diode reverse recovery See CT1 IC=4A, V+=400V, VCC=15V TJ=150°C, IC=3.5A, VP=600V V+= 450V VCC=+15V to 0V FULL SQUARE See CT3 TJ=25°C, VP=600V, SCSOA ICSC Short Circuit Safe Operating Area Short Circuit Collector Current 5 --- --- 30 --- --- μs A V+= 360V, VCC=+15V to 0V See CT2 TJ=25°C, V+= 400V, VCC=15V See CT2 Recommended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential (Note 3) Symbol Definition Min Typ Max VB1,2,3 High side floating supply voltage VS+12 VS+15 VS+20 VS1,2,3 High side floating supply offset voltage Note 4 --- 450 VCC Low side and logic fixed supply voltage 12 15 20 VITRIP ITRIP input voltage VSS --- VSS+5 VIN Logic input voltage LIN, HIN, FLT/EN VSS --- VSS+5 HIN High side PWM pulse width 1 --- --- Deadtime External dead time between HIN and LIN 1 ----Note 3: For more details, see IR21364 data sheet Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details) 4 Units V V V μs μs www.irf.com IRAM136-0760A Static Electrical Characteristics Driver Function @ TJ= 25°C VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all six channels. (Note 3) Symbol Definition Min Typ Max Units VIN,th+ Positive going input threshold for LIN, HIN, FLT/EN 2.5 --- --- V VIN,th- Negative going input threshold for LIN, HIN, FLT/EN --- --- 0.8 V VCCUV+, VBSUV+ VCC and VBS supply undervoltage, Positive going threshold 10.6 11.1 11.6 V VCCUV-, VBSUV- VCC and VBS supply undervoltage, Negative going threshold 10.4 10.9 11.4 V VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V IQBS Quiescent VBS supply current --- --- 120 μA IQCC Quiescent VCC supply current --- --- 4 mA ILK Offset Supply Leakage Current --- --- 50 μA IIN+ Input bias current VIN=3.3V for LIN, HIN, FLT/EN --- 100 195 μA IIN- Input bias current VIN=0V for LIN, HIN, FLT/EN -1 -- --- μA ITRIP+ ITRIP bias current VT/ITRIP=3.3V --- 3.3 6 μA ITRIP- ITRIP bias current VT/ITRIP=0V -1 --- --- μA V(ITRIP) ITRIP threshold Voltage 0.44 0.49 0.54 V V(ITrip, HYS) ITRIP Input Hysteresis --- 0.07 --- V Ron_FLT Fault low on resistance --- 50 100 Dynamic Electrical Characteristics @ TJ= 25°C Driver only timing unless otherwise specified. Symbol Parameter Min Typ Max TON Units Conditions Input to Output propagation turnon delay time (see fig.11) --- 0.7 --- TOFF Input to Output propagation turnoff delay time (see fig. 11) --- 0.7 --- μs μs IC=3.5A, V+=300V TFILIN Input filter time (HIN,LIN,FLT/EN) 100 200 --- ns VIN=0 or VIN=5V TEN EN to output propagation delay 300 450 600 ns VIN=0 or VIN=5V, VEN=0 TFLT ITRIP to Fault propagation delay 400 600 800 ns VIN=0 or VIN=5V, VITRIP=5V TBLT-ITRIP ITRIP Blanking Time 100 150 --- ns VIN=0 or VIN=5V, VITRIP=5V TITRIP ITRIP to six switch turn-off propagation delay (see fig. 2) --- --- 1.75 μs IC=3.5A, V+=300V DT Dead Time 220 290 360 ns VIN=0 or VIN=5V MT Matching Propagation Delay Time (On & Off) all channels --- 40 75 ns External dead time> 400ns TFLT-CLR FAULT clear time (see fig. 2) --- 1.7 --- ms TC = 25°C www.irf.com 5 IRAM136-0760A Thermal and Mechanical Characteristics Symbol Parameter Min Typ Max Rth(J-C) Thermal resistance, per IGBT --- 6.4 7.0 Rth(J-C) Thermal resistance, per Diode --- 9.0 9.9 --- Units Conditions Inverter Operating Condition Flat, greased surface. Heatsink °C/W compound thermal conductivity 1W/mK Rth(C-S) Thermal resistance, C-S --- 0.1 CD Creepage Distance, from pins to backside of module 3.2 --- --- mm CTI Comparative Tracking Index 600 --- --- V See outline Drawings Internal NTC - Thermistor Characteristics Parameter Definition Min Typ Max Units Conditions R25 Resistance 97 100 103 k R125 Resistance 2.25 2.52 2.80 k B B-constant (25-50°C) 4165 4250 4335 k 125 °C Temperature Range -40 Typ. Dissipation constant --- 1 TC = 25°C TC = 125°C R2 = R1e [B(1/T2 - 1/T1)] mW/°C TC = 25°C --- Input-Output Logic Level Table 6 FLT/EN ITRIP HIN1,2,3 LIN1,2,3 U,V,W 1 0 1 0 V+ 1 0 0 1 0 1 0 0 0 Off 1 0 1 1 Off 1 1 X X Off 0 X X X Off www.irf.com IRAM136-0760A HIN1,2,3 LIN1,2,3 ITRIP U,V,W Figure 1. Input/Output Timing Diagram HIN1,2,3 LIN1,2,3 50% 50% ITRIP U,V,W 50% 50% T ITRIP T FLT-CLR Figure 2. ITRIP Timing Waveform Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7 IRAM136-0760A Module Pin-Out Description 8 Pin Name 1 VB3 2 W,VS3 Description High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage 3 na none 4 na none 5 VB2 6 V,VS2 High Side Floating Supply voltage 2 Output 2 - High Side Floating Supply Offset Voltage 7 na none 8 na none 9 VB1 10 U,VS1 11 na none 12 na none 13 V + 14 na 15 na 16 ITRIP Current Protection Pin 17 VRU Low Side Emitter Connection - Phase 1 18 FLT/EN 19 VRV Low Side Emitter Connection - Phase 2 20 HIN1 Logic Input High Side Gate Driver - Phase 1 High Side Floating Supply voltage 1 Output 1 - High Side Floating Supply Offset Voltage Positive Bus Input Voltage none none Fault Output and Enable Pin 21 VRW Low Side Emitter Connection - Phase 3 22 HIN2 Logic Input High Side Gate Driver - Phase 2 23 HIN3 Logic Input High Side Gate Driver - Phase 3 24 LIN1 Logic Input Low Side Gate Driver - Phase 1 25 LIN2 Logic Input Low Side Gate Driver - Phase 2 26 LIN3 Logic Input Low Side Gate Driver - Phase 3 27 VTH Temperature Feedback 28 VCC +15V Main Supply 29 VSS Negative Main Supply www.irf.com IRAM136-0760A Typical Application Connection IRAM136-0760A 1 VB3 (1) W, VS3 (2) W 3-Phase AC MOTOR VB2 (5) V, VS2 (6) V VB1 (9) U, VS1 (10) U V+ V+ (13) DC BUS CAPACITORS ITRIP (16) VRU (17) PHASE LEG CURRENT SENSE FLT/EN (18) VRV (19) HIN1 (20) VRW (21) HIN2 (22) HIN3 (23) LIN1 (24) CONTROLLER IRAM136-0760A CURRENT SENSING CAN USE A SINGLE SENSE RESISTOR OR PHASE LEG SENSING AS SHOWN BOOT-STRAP CAPACITORS LIN2 (25) LIN3 (26) VTH (27) VDD (28) 100nF 10m 0.1m 29 Enable VSS (29) 15 V 5V 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1μF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. After approx. 2ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation. www.irf.com 9 IRAM136-0760A Maximum Output Phase RMS Current - A 8 7 6 5 4 TC = 80ºC TC = 90ºC TC = 100ºC 3 2 1 0 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz Maximum Output Phase RMS Current - A 4 3 2 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz 1 0 1 10 100 Modulation Frequency - Hz Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency Sinusoidal Modulation, V+=400V, TJ=150°C, TC=100°C, MI=0.8, PF=0.6 10 www.irf.com IRAM136-0760A 60 Total Power Loss- W 50 40 30 20 IOUT = 4.0A IOUT = 3.5A IOUT = 3.0A 10 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz Figure 5. Total Power Losses vs. PWM Switching Frequency Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz 80 70 Total Power Loss - W 60 50 40 30 FPWM = 20kHz FPWM = 16kHz FPWM = 12kHz 20 10 0 0 1 2 3 4 5 Output Phase Current - ARMS Figure 6. Total Power Losses vs. Output Phase Current Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz www.irf.com 11 IRAM136-0760A Max Allowable Case Temperature - ºC 160 140 120 100 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz 80 60 40 0 1 2 3 4 5 Output Phase Current - ARMS Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz 160 IGBT Junction Temperature - °C TJ avg = 1.2 x TTherm + 21 150 140 130 120 110 100 105 90 65 70 75 80 85 90 95 100 105 110 115 Internal Therm istor Tem perature Equivalent Read Out - °C Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6 12 www.irf.com IRAM136-0760A 5.0 Thermistor Pin Read-Out Voltage - V 4.5 4.0 3.5 3.0 2.5 2.0 Max Avg. Min 1.5 1.0 0.5 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 Therm istor Tem perature - °C 90 100 110 120 130 Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and Normal Thermistor Resistance values vs. Temperature Table. Recommended Bootstrap Capacitor - F 11.0 10F 10.0 9.0 8.0 6.8F 7.0 6.0 4.7F 5.0 4.0 3.3F 3.0 2.2F 2.0 1.5F 1.0 0.0 0 5 10 15 20 PWM Frequency - kHz Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency www.irf.com 13 IRAM136-0760A Figure 11. Switching Parameter Definitions VCE IC IC VCE 90% IC 50% HIN /LIN 90% IC 50% VCE HIN /LIN HIN /LIN 50% HIN /LIN 50% VCE 10% IC 10% IC tr tf TON TOFF Figure 11a. Input to Output propagation turn-on delay time. Figure 11b. Input to Output propagation turn-off delay time. IF VCE HIN/LIN Irr trr Figure 11c. Diode Reverse Recovery. 14 www.irf.com IRAM136-0760A V+ 5V IN Ho Hin1,2,3 IC Driver U,V,W Lo IO Lin1,2,3 Figure CT1. Switching Loss Circuit V+ 1k VCC 10k Lin1,2,3 IN Ho Hin1,2,3 IC Driver 5VZD U,V,W Lo IN IO Io Figure CT2. S.C.SOA Circuit V+ 1k VCC 10k IC Driver 5VZD IN Ho Hin1,2,3 Lin1,2,3 IN U,V,W Lo IO Io Figure CT3. R.B.SOA Circuit www.irf.com 15 IRAM136-0760A Package Outline IRAM136-0760A missing pin : 3,4,7,8,11,12,14,15 note3 note5 IRAM136-0760A P note4 note2 note1: Unit Tolerance is +0.5mm, 䇭䇭䇭 Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note5: “P” Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module. Dimensions in mm For mounting instruction see AN-1049 16 www.irf.com IRAM136-0760A Package Outline IRAM136-0760A2 missing pin : 3,4,7,8,11,12,14,15 note3 note5 IRAM136-0760A2 P note4 note2 note1: Unit Tolerance is +0.5mm, 䇭䇭䇭 Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note5: “P” Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module. Dimensions in mm For mounting instruction see AN-1049 Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 2008-07-29 www.irf.com 17