CYStech Electronics Corp. Spec. No. : C154C6 Issued Date : 2010.09.29 Revised Date : 2012.07.19 Page No. : 1/7 PNP and NPN Dual Digital Transistors HBCA143TC6 Features •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). •The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the advantage of almost completely eliminating parasitic effects. •Only the on/off conditions need to be set for operation, making device design easy. •One DTA143T chip and one DTC143T chip in a SOT-563 package. •Mounting by SOT-523 automatic mounting machines is possible. •Mounting cost and area can be cut in half. •Transistor elements are independent, eliminating interference. •Pb-free and halogen-free package. Equivalent Circuit Outline SOT-563 HBCA143TC6 C1 B2 E2 RB2 TR1 TR2 RB1 RB1=4.7kΩ , RB2=4.7 kΩ E1 B1 C2 Ordering Information Device HBCA143TC6 HBCA143TC6 Package SOT-563 (Pb-free and halogen-free package) Shipping Marking 3000 pcs / Tape & Reel 16 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C154C6 Issued Date : 2010.09.29 Revised Date : 2012.07.19 Page No. : 2/7 Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC Pd Tj Tstg Limits Tr1(NPN) Tr2(PNP) 50 -50 50 -50 5 -5 100 -100 150 (Note) 150 -55~+150 Unit V V V mA mW °C °C Note : 120mW per element must not be exceeded. Characteristics (Ta=25℃) •Tr1(NPN) Parameter Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency VCBO VCEO VEBO ICBO IEBO VCE(sat) hFE R fT 50 50 5 100 3.29 - 4.7 250 0.5 0.5 0.3 600 6.11 - V V V μA μA V kΩ MHz Test Conditions IC=50μA IC=1mA IE=50μA VCB=50V VEB=4V IC=5mA, IB=0.25mA VCE=5V, IC=1mA VCE=10V, IE=5mA, f=100MHz* * Transition frequency of the device •Tr2(PNP) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R fT -50 -50 -5 100 3.29 - 0.1 4.7 250 V V V -0.5 μA -0.5 μA -0.3 V 600 6.11 kΩ MHz Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-50V VEB=-4V IC=-5mA, IB=-0.25mA VCE=-5V, IC=-1mA VCE=-10V, IC=-5mA,f=100MHz * * Transition frequency of the device HBCA143TC6 CYStek Product Specification Spec. No. : C154C6 Issued Date : 2010.09.29 Revised Date : 2012.07.19 Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics •Tr1(NPN) Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) Current Gain---HFE 1000 100 HFE@VCE=5V 10 100 VCESAT@IC=20IB 10 0.1 1 10 100 1 10 100 Collector Current --IC(mA) Collector Current --- IC(mA) Current Gain vs Collector Current Saturation Voltage vs Collector Current •Tr2(PNP) 1000 1000 VCE=5V Current Gain---HFE Saturation Voltage---(mV) VCE(SAT)@IC=20IB 100 10 100 0.1 HBCA143TC6 1 10 Collector Current---IC(mA) 100 0.1 1 10 100 Collector Current---IC(mA) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C154C6 Issued Date : 2010.09.29 Revised Date : 2012.07.19 Page No. : 4/7 Typical Characteristics(Cont.) Power Derating Curves Power Dissipation---PD(mW) 160 140 Dual 120 100 Single 80 60 40 20 0 0 50 100 150 200 Ambient Temperature --- TA(℃ ) Moisture Sensitivity Level : conform to JEDEC level 1 Recommended Storage Condition: Temperature : ≤ 30 °C Humidity : ≤ 60% RH HBCA143TC6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C154C6 Issued Date : 2010.09.29 Revised Date : 2012.07.19 Page No. : 5/7 Reel Dimension Carrier Tape Dimension HBCA143TC6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C154C6 Issued Date : 2010.09.29 Revised Date : 2012.07.19 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. HBCA143TC6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C154C6 Issued Date : 2010.09.29 Revised Date : 2012.07.19 Page No. : 7/7 SOT-563 Dimension Marking: Product Code Date Code: Year+Month Year: 6→2006, 7→2007 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Inches Min. Max. 0.021 0.024 0.000 0.002 0.018 0.022 0.004 0.006 0.059 0.067 DIM A A1 e c D Millimeters Min. Max. 0.525 0.600 0.000 0.050 0.450 0.550 0.090 0.160 1.500 1.700 DIM b E1 E L θ 6-Lead SOT-563 Plastic Surface Mounted Package CYStek Package Code: C6 Inches Min. Max. 0.007 0.011 0.043 0.051 0.059 0.067 0.004 0.012 7° REF Millimeters Min. Max. 0.170 0.270 1.100 1.300 1.500 1.700 0.100 0.300 7° REF Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBCA143TC6 CYStek Product Specification