CYSTEKEC HBCA143TC6 Pnp and npn dual digital transistor Datasheet

CYStech Electronics Corp.
Spec. No. : C154C6
Issued Date : 2010.09.29
Revised Date : 2012.07.19
Page No. : 1/7
PNP and NPN Dual Digital Transistors
HBCA143TC6
Features
•Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
•The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the
advantage of almost completely eliminating parasitic effects.
•Only the on/off conditions need to be set for operation, making device design easy.
•One DTA143T chip and one DTC143T chip in a SOT-563 package.
•Mounting by SOT-523 automatic mounting machines is possible.
•Mounting cost and area can be cut in half.
•Transistor elements are independent, eliminating interference.
•Pb-free and halogen-free package.
Equivalent Circuit
Outline
SOT-563
HBCA143TC6
C1
B2
E2
RB2
TR1
TR2
RB1
RB1=4.7kΩ , RB2=4.7 kΩ
E1
B1
C2
Ordering Information
Device
HBCA143TC6
HBCA143TC6
Package
SOT-563
(Pb-free and halogen-free package)
Shipping
Marking
3000 pcs / Tape & Reel
16
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C154C6
Issued Date : 2010.09.29
Revised Date : 2012.07.19
Page No. : 2/7
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
Tr1(NPN)
Tr2(PNP)
50
-50
50
-50
5
-5
100
-100
150 (Note)
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
Note : 120mW per element must not be exceeded.
Characteristics (Ta=25℃)
•Tr1(NPN)
Parameter
Symbol
Min
Typ Max Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Input Resistance
Transition Frequency
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
50
50
5
100
3.29
-
4.7
250
0.5
0.5
0.3
600
6.11
-
V
V
V
μA
μA
V
kΩ
MHz
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=50V
VEB=4V
IC=5mA, IB=0.25mA
VCE=5V, IC=1mA
VCE=10V, IE=5mA, f=100MHz*
* Transition frequency of the device
•Tr2(PNP)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol Min. Typ. Max. Unit
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
-50
-50
-5
100
3.29
-
0.1
4.7
250
V
V
V
-0.5 μA
-0.5 μA
-0.3
V
600
6.11 kΩ
MHz
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-50V
VEB=-4V
IC=-5mA, IB=-0.25mA
VCE=-5V, IC=-1mA
VCE=-10V, IC=-5mA,f=100MHz *
* Transition frequency of the device
HBCA143TC6
CYStek Product Specification
Spec. No. : C154C6
Issued Date : 2010.09.29
Revised Date : 2012.07.19
Page No. : 3/7
CYStech Electronics Corp.
Typical Characteristics
•Tr1(NPN)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---HFE
1000
100
HFE@VCE=5V
10
100
VCESAT@IC=20IB
10
0.1
1
10
100
1
10
100
Collector Current --IC(mA)
Collector Current --- IC(mA)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
•Tr2(PNP)
1000
1000
VCE=5V
Current Gain---HFE
Saturation Voltage---(mV)
VCE(SAT)@IC=20IB
100
10
100
0.1
HBCA143TC6
1
10
Collector Current---IC(mA)
100
0.1
1
10
100
Collector Current---IC(mA)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C154C6
Issued Date : 2010.09.29
Revised Date : 2012.07.19
Page No. : 4/7
Typical Characteristics(Cont.)
Power Derating Curves
Power Dissipation---PD(mW)
160
140
Dual
120
100
Single
80
60
40
20
0
0
50
100
150
200
Ambient Temperature --- TA(℃ )
Moisture Sensitivity Level : conform to JEDEC level 1
Recommended Storage Condition:
Temperature : ≤ 30 °C
Humidity : ≤ 60% RH
HBCA143TC6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C154C6
Issued Date : 2010.09.29
Revised Date : 2012.07.19
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
HBCA143TC6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C154C6
Issued Date : 2010.09.29
Revised Date : 2012.07.19
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
HBCA143TC6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C154C6
Issued Date : 2010.09.29
Revised Date : 2012.07.19
Page No. : 7/7
SOT-563 Dimension
Marking:
Product Code
Date Code: Year+Month
Year: 6→2006, 7→2007
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
Style:
Pin 1. Emitter1 (E1)
Pin 2. Base1 (B1)
Pin 3. Collector2 (C2)
Pin 4. Emitter2 (E2)
Pin 5. Base2 (B2)
Pin 6. Collector1 (C1)
Inches
Min.
Max.
0.021
0.024
0.000
0.002
0.018
0.022
0.004
0.006
0.059
0.067
DIM
A
A1
e
c
D
Millimeters
Min.
Max.
0.525
0.600
0.000
0.050
0.450
0.550
0.090
0.160
1.500
1.700
DIM
b
E1
E
L
θ
6-Lead SOT-563 Plastic
Surface Mounted Package
CYStek Package Code: C6
Inches
Min.
Max.
0.007
0.011
0.043
0.051
0.059
0.067
0.004
0.012
7° REF
Millimeters
Min.
Max.
0.170
0.270
1.100
1.300
1.500
1.700
0.100
0.300
7° REF
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HBCA143TC6
CYStek Product Specification
Similar pages