GDSSF230 2 D DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G S Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 2.4A RDS(ON) < 115mΩ @ VGS=2.5V RDS(ON) < 60mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D 3 2302 G 1 2 S Application ●Battery protection ●Load switch ●Power management SOT-23 top view Marking and pin Assignment PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 2302 SSF2302 SOT-23 Ø180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS ID (25℃) Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range ID (70℃) Limit Unit 20 V ±8 V 2.4 1. A 10 A 7 IDM PD TJ,TSTG A 0.9 W -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) Suzhou Goodark Electronics Co., Ltd RθJA 140 Version 1.0 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition GDSSF230 2 Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 20 1 μA V Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.95 1.2 V Drain-Source On-State Resistance RDS(ON) VGS=2.5V, ID=3.1A 70 115 mΩ VGS=4.5V, ID=3.6A 45 60 mΩ VDS=5V,ID=3.6A 8 S 300 PF 120 PF 80 PF ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 0.65 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V,VGS=0V, F=1.0MHz SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time td(on) tr td(off) VDD=10V, RL = 2.8 Ω VGS=4.5V,RGEN=6Ω, ID=3.6A, tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V,ID=3.6A,VGS=4.5V 7 15 nS 55 80 nS 16 60 nS 10 25 nS 4.0 10 nC 0.65 nC 1.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=0.94A 0.94 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. Suzhou Goodark Electronics Co., Ltd 0.76 Version 1.0 1.2 V A GDSSF230 2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen D Vout toff tf td(off) 90% Rl Vin ton tr td(on) VOUT 90% INVERTED 10% 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 4 Drain Current Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS Suzhou Goodark Electronics Co., Ltd ID- Drain Current (A) Figure 6 Drain-Source On-Resistance Version 1.0 ID- Drain Current (A) Normalized On-Resistance GDSSF230 2 TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 11 Gate Charge Suzhou Goodark Electronics Co., Ltd Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward Version 1.0 ID- Drain Current (A) GDSSF230 2 Vds Drain-Source Voltage (V) Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance Suzhou Goodark Electronics Co., Ltd Version 1.0 GDSSF230 2 SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact。 Suzhou Goodark Electronics Co., Ltd Version 1.0