MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CE
800VCoolMOS™CEPowerTransistor
IPA80R650CE
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
800VCoolMOS™CEPowerTransistor
IPA80R650CE
1Description
TO-220FP
CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower
MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance
andruggednesstoallowstabledesignsathighestefficiencylevel.
CoolMOS™800VCEcomeswithselectedpackagechoiceofferingthe
benefitofreducedsystemcostsandhigherpowerdensitydesigns.
Features
•Highvoltagetechnology
•Extremedv/dtrated
•Highpeakcurrentcapability
•Lowgatecharge
•Loweffectivecapacitances
•Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound
•Qualifiedforconsumergradeapplications
Drain
Pin 2, Tab
Gate
Pin 1
Applications
LEDLightingandAdapterinQRFlybacktopology
Source
Pin 3
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
800
V
RDS(on),max
650
mΩ
Qg.typ
45
nC
ID,pulse
24
A
Eoss@400V
3.3
µJ
Body diode di/dt
400
A/µs
Type/OrderingCode
Package
Marking
IPA80R650CE
PG-TO 220 FullPAK
8R650CE
Final Data Sheet
2
RelatedLinks
see Appendix A
Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor
IPA80R650CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor
IPA80R650CE
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
8.0
5.1
A
TC = 25°C
TC = 100°C
-
24
A
TC=25°C
-
-
340
mJ
ID=1.6A; VDD=50V; see table 10
EAR
-
-
0.20
mJ
ID=1.6A; VDD=50V; see table 10
Avalanche current, repetitive
IAR
-
-
1.60
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...640V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
33
W
TC=25°C
Storage temperature
Tstg
-40
-
150
°C
-
Operating junction temperature
Tj
-40
-
150
°C
-
Mounting torque
-
-
-
50
Ncm M2.5 screws
Continuous diode forward current
IS
-
-
8.0
A
TC=25°C
Diode pulse current2)
IS,pulse
-
-
24
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
4
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Maximum diode commutation speed
dif/dt
-
-
400
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Insulation withstand voltage for
TO-220FP
VISO
-
-
2500
V
Vrms,TC=25°C,t=1min
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
1)
Limited by Tj max <150°C.
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
4
Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor
IPA80R650CE
3Thermalcharacteristics
Table3ThermalcharacteristicsTO-220FullPAK
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
3.8
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
80
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Final Data Sheet
Tsold
5
1.6mm (0.063 in.) from case for 10s
Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor
IPA80R650CE
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=0.25mA
3.0
3.9
V
VDS=VGS,ID=0.47mA
-
100
20
-
µA
VDS=800,VGS=0V,Tj=25°C
VDS=800,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.56
1.50
0.65
-
Ω
VGS=10V,ID=5.1A,Tj=25°C
VGS=10V,ID=5.1A,Tj=150°C
Gate resistance
RG
-
1.2
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
800
-
Gate threshold voltage
V(GS)th
2.1
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
1100
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
46
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
energy related1)
Co(er)
-
36
-
pF
VGS=0V,VDS=0...480V
Effective output capacitance,
time related2)
Co(tr)
-
99
-
pF
ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time
td(on)
-
25
-
ns
VDD=400V,VGS=10V,ID=8A,
RG=10Ω;seetable9
Rise time
tr
-
15
-
ns
VDD=400V,VGS=10V,ID=8A,
RG=10Ω;seetable9
Turn-off delay time
td(off)
-
72
-
ns
VDD=400V,VGS=10V,ID=8A,
RG=10Ω;seetable9
Fall time
tf
-
10
-
ns
VDD=400V,VGS=10V,ID=8A,
RG=10Ω;seetable9
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
6
-
nC
VDD=640V,ID=8A,VGS=0to10V
Gate to drain charge
Qgd
-
22
-
nC
VDD=640V,ID=8A,VGS=0to10V
Gate charge total
Qg
-
45
-
nC
VDD=640V,ID=8A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.5
-
V
VDD=640V,ID=8A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V
2)
Final Data Sheet
6
Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor
IPA80R650CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=8A,Tj=25°C
550
-
ns
VR=400V,IF=8A,diF/dt=100A/µs;
see table 8
-
7
-
µC
VR=400V,IF=8A,diF/dt=100A/µs;
see table 8
-
24
-
A
VR=400V,IF=8A,diF/dt=100A/µs;
see table 8
Min.
Typ.
Max.
VSD
-
1
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
7
Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor
IPA80R650CE
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
102
35
1 µs
30
10 µs
101
100 µs
1 ms
25
10 ms
20
ID[A]
Ptot[W]
100
10-1
DC
15
10-2
10
10-3
5
0
0
25
50
75
100
125
10-4
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
101
10
1 µs
1
10
10 µs
0.5
100 µs
1 ms
100 0.2
10 ms
ZthJC[K/W]
ID[A]
100
DC
10-1
10-2
0.1
0.05
0.02
10-1
0.01
10-3
10-4
single pulse
100
101
102
103
10-2
10-5
10-4
10-3
VDS[V]
10-1
100
101
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-2
ZthJC=f(tP);parameter:D=tp/T
8
Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor
IPA80R650CE
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
30
15
20 V
10 V
20 V
10 V
25
12
6V
20
5.5 V
15
ID[A]
ID[A]
9
6.5 V
5V
6
10
6V
4.5 V
3
5.5 V
5
5V
0
0
5
10
15
20
0
25
0
5
10
VDS[V]
15
20
25
VDS[V]
ID=f(VDS);Tj=25°C;tp=10µs;parameter:VGS
ID=f(VDS);Tj=150°C;tp=10µs;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
2.8
1.60
1.50
1.40
1.30
2.4
1.20
2.0
4.5 V
5V
5.5 V
RDS(on)[Ω]
RDS(on)[Ω]
1.10
6V
6.5 V
1.00
0.90
typ
98%
0.80
0.70
0.60
1.6
20 V
0.50
10 V
0.40
0.30
1.2
0
3
6
9
12
15
0.20
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=150°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=5.1A;VGS=10V
9
Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor
IPA80R650CE
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
30
10
9
25 °C
25
8
160 V
640 V
7
20
VGS[V]
ID[A]
6
15
150 °C
5
4
10
3
2
5
1
0
0
2
4
6
8
0
10
0
5
10
15
VGS[V]
20
25
30
35
40
45
Qgate[nC]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;tp=10µs;parameter:Tj
VGS=f(Qgate);ID=8.0Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
350
25 °C
150 °C
300
250
IF[A]
EAS[mJ]
101
200
150
100
100
50
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
125
150
Tj[°C]
IF=f(VSD);tp=10µs;parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=1.6A;VDD=50V
10
Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor
IPA80R650CE
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
104
960
940
920
Ciss
900
103
880
840
C[pF]
VBR(DSS)[V]
860
820
800
102
Coss
780
760
101
740
Crss
720
700
680
-75
-50
-25
0
25
50
75
100
125
150
175
100
0
100
Tj[°C]
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=0.25mA
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
8.0
7.5
7.0
6.5
6.0
5.5
Eoss[µJ]
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
100
200
300
400
500
600
700
800
VDS[V]
Eoss=f(VDS)
Final Data Sheet
11
Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor
IPA80R650CE
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
QF
IF
t
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
IF
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
12
ID
VDS
Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor
IPA80R650CE
7PackageOutlines
),/
'
'#
'$
9
9#
9$
9%
9&
;
)
)#
*
=
=#
0
+
.
.#
@3
3
/,..,/*6*45
MIN
MAX
4.50
4.90
2.34
2.85
2.86
2.42
0.65
0.90
0.95
1.38
0.95
1.51
0.65
1.38
0.65
1.51
0.40
0.63
15.67
16.15
8.97
9.83
10.00
10.65
2.54 (BSC)
,0(+*5
MIN
0.177
0.092
0.095
0.026
0.037
0.037
0.026
0.026
0.016
0.617
0.353
0.394
)1(7/*06 01"
Z8B00003319
5('.*
0
2.5
0
2.5
5mm
*7412*'0 241-*(6,10
0.100 (BSC)
5.08
3
28.70
12.78
2.83
2.95
3.15
MAX
0.193
0.112
0.113
0.035
0.054
0.059
0.054
0.059
0.025
0.636
0.387
0.419
0.200
3
29.75
13.75
3.45
3.38
3.50
1.130
0.503
0.111
0.116
0.124
1.171
0.541
0.136
0.133
0.138
,557* )'6*
05-05-2014
4*8,5,10
04
Dimensions do not include mold flash, protrusions or gate burrs
Figure 1
Final Data Sheet
Outline PG-TO 220 FullPAK, dimensions in mm/inches
13
Rev.2.1,2015-06-23
800V CoolMOS™ CE Power Transistor
IPA80R650CE
8
Appendix A
Table 11
Related Links
• IFX CoolMOS TM CE Webpage: www.infineon.com
• IFX CoolMOS TM CE application note: www.infineon.com
• IFX CoolMOS TM CE simulation model:
www.infineon.com
• IFX Design tools: www.infineon.com
Final Data Sheet
14
Rev. 2.1, 2015-06-23
800V CoolMOS™ CE Power Transistor
IPA80R650CE
Revision History
IPA80R650CE
Revision: 2015-06-23, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2014-09-25
Release of final version
2.1
2015-06-23
Continuous current Id update
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously
improve the quality of this document. Please send your proposal (including a reference to this document) to:
[email protected]
Published by
Infineon Technologies AG
81726 München, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With
respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application
of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without
limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
15
Rev. 2.1, 2015-06-23