SEMICONDUCTOR BC807W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M ·Complementary to BC817W. D J G A 2 RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Emitter Current IE 500 mA Collector Power Dissipation PC 100 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ C SYMBOL L P MAXIMUM RATING (Ta=25℃) CHARACTERISTIC 3 1 H N N K DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + 0.3+0.10/-0.05 _ 0.20 2.10 + 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 _ 0.10 0.42 + 0.10 MIN 0.1 MAX 1. EMITTER 2. BASE Storage Temperature Range 3. COLLECTOR USM ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-20V, IE=0 - - -0.1 μA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 μA hFE(1) VCE=-1V, IC=-100mA 100 - 630 hFE(2) VCE=-1V, IC=-500mA 40 - - VCE(sat) IC=-500mA, IB=-50mA - - -0.7 V Base-Emitter Voltage VBE VCE=-1V, IC=-500mA - - -1.2 V Transition Frequency fT 80 - - MHz - 9 - pF DC Current Gain (Note) Collector-Emitter Saturation Voltage Cob Collector Output Capacitance VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz Note : hFE Classification 16:100～250 , 25:160～400 , 40:250～630 MARK SPEC TYPE. BC807W-16 BC807W-25 BC807W-40 MARK 1M 1N 1R 2008. 9. 2 Revision No : 0 1/2 BC807W 2008. 9. 2 Revision No : 0 2/2