ETC BC858B-3K Sot23 pnp silicon planar general purpose transistor Datasheet

SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
BC856
BC858
BC860
ISSUE 6 - APRIL 1997
PARTMARKING DETAILS
COMPLEMENTARY TYPES
BC856A–3A
BC856
BC858C–3L
BC846
BC856B–Z3B
BC859A–Z4A
BC857
BC847
BC857A–Z3E
BC859B–4B
BC858
BC848
BC857B–3F
BC859C–Z4C
BC859
BC849
BC857C–3G
BC860A–Z4E
BC860
BC850
BC858A–3J
BC860B–4F
BC858B–3K
BC860C–4GZ
BC857
BC859
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BC856
BC857
VCBO
VCES
VCEO
VEBO
IC
IEM
IBM
IEM
Ptot
Tj:Tstg
-80
-80
-65
-50
-50
-45
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage
Temperature Range
BC858
BC859
BC860
-30
-30
-30
-30
-30
-30
-5
-100
-200
-200
-200
330
-55 to +150
-50
-50
-45
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Max
Collector Cut-Off Current ICBO
Max
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
VCE(sat) Typ
Max.
Typ
Max.
Typ
Max.
VBE(sat) Typ
BC856 BC857 BC858 BC859 BC860
-15
-4
-75 -75
-300 -300
VBE
Min
Typ
Max
Max
-75 -75
-250 -250
-600 -600
-650 -650
-750 -750
-600
-650
-750
-820
UNIT CONDITIONS.
nA
VCB = -30V
VCB = -30V
µA
Tamb=150°C
mV IC=-10mA,
IB=-0.5mA
mV IC=-100mA,
IB=-5mA
mV IC=-10mA*
mV
-850
Typ
Base-Emitter Voltage
-75
-300
-250
-650
-300
-600
-700
mV
-580 -580
-650 -650
-750 -750
UNIT
V
V
V
V
mA
mA
mA
mA
mW
°C
mV
mV
IC=-10mA,
IB=-0.5mA
IC=-100mA,
IB=-5mA
IC=-2mA
VCE=-5V
IC=-10mA
VCE=-5V
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the
operating point IC = 11mA, VCE = 1V at constant base current.
BC856
BC858
BC860
BC857
BC859
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
Noise Figure
SYMBOL
N
Typ
Max
2
10
2
10
2
10
1
4
Typ
Max
–
–
–
–
–
–
1.2
4
Equivalent Noise
Voltage
en
Max
–
–
–
110
Dynamic
Group VI
Characteristics
hie
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Typ
Typ
Typ
Typ
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Typ
Max
0.4
1.2
2.2
0.4
1.2
2.2
–
–
–
–
–
–
2.5
1.5
2
–
–
–
2.5
1.5
2
75
110
150
75
110
150
–
–
–
20
40
450
600
900
20
40
–
–
–
–
0.4
1.2
2.2
1.6
2.7
4.5
3.2
4.5
8.5
6
8.7
15
2.5
1.5
2
3
75
110
150
125
220
260
240
330
500
450
600
900
20
40
18
30
30
60
60
110
Group A
Group B
Group C
Group VI
Group A
Group B
Group C
Group VI
hre
hfe
Group A
Group B
Group C
Group VI
Group A
Group B
Group C
hoe
UNIT CONDITIONS.
dB
VCB = -5V,
dB
IC=-200µA, RG=2kΩ,
f=1kHz, ∆f=200Hz
1 dB
VCB = -5V,
3 dB
IC=-200µA, RG=2kΩ,
f=30Hz to 15kHz at
-3dB points
110 nV
VCB = -5V,
IC=-200µA, RG=2kΩ,
f=10Hz to 50Hz at
-3dB points
– kΩ
– kΩ
– kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
6 kΩ
8.7 kΩ
15 kΩ
– x10-4
1.5 x10-4
2 x10-4
3 x10-4
–
VCE=-5V
–
Ic=-2mA
–
f=1kHz
BC856 BC857 BC858 BC859 BC860
6
8.7
15
–
1.5
2
3
–
–
–
450
600
900
–
–
60
110
1
4
450
600
900
– µs
– µs
µs
µs
µs
µs
60 µs
110 µs
BC856
BC858
BC860
BC857
BC859
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
Static
Group VI
Forward
Current Ratio
Group A
Group B
Group C
SYMBOL
hFE
Min
Typ
Max
Typ
hFE
Min
Typ
Max
Typ
Typ
hFE
Min
Typ
Max
Typ
hFE
Typ.
Transition Frequency
fT
Min
Typ
Max
Typ
Typ
Collector-Base
Capacitance
Cobo
Typ
BC856 BC857 BC858 BC859 BC860
–
–
–
–
–
–
–
–
UNIT CONDITIONS.
IC=-2mA,
VCE=-5V
200
270
75
110
150
90
125
180
250
120
150
220
290
475
200
270
–
270
–
270
420
500
800
–
150
420
500
800
400
150
420
500
800
–
300
420
500
800
–
IC=-100mA,VCE=-5V
300 MHz IC=-10mA,VCE=-5V
f=100MHz
VCB=-10V,
pF
f=1MHz
75
110
150
90
75
110
150
90
120
120
200
–
–
–
–
–
150
–
4.5
Spice parameter data is available upon request for these devices
–
IC=-0.01mA,VCE=-5V
IC=-2mA,
VCE=-5V
IC=-100mA,VCE=-5V
IC=-0.01mA,VCE=-5V
IC=-2mA,
VCE=-5V
IC=-100mA,VCE=-5V
IC=-0.01mA,
VCE=-5V
IC=-2mA,
VCE=-5V