PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS VDSS ID25 RDS(on) trr TO-247 (IXFH) Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 14 40 A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 7 30 500 A mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω 10 V/ns PD = 800 V = 14 A ≤ 720 mΩ Ω ≤ 250 ms Maximum Ratings TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque (TO-247, TO-3P) Weight PLUS220, PLUS220 SMD TO-268, TO-3P TO-247 TO-3P (IXFQ) G D (TAB) S TO-268 (IXFT) G S D (TAB) TC = 25°C TL TSOLD D (TAB) 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2 5.5 6 PLUS220 (IXFV) G D (TAB) D S PLUS220SMD (IXFV...S) g g g G S G = Gate S = Source Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. Features BVDSS 800 z VGS = 0 V, ID = 250μA V z VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) 3.0 TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 5.5 V ±100 nA 25 1 μA mA 720 mΩ z D = Drain TAB = Drain International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z © 2006 IXYS All rights reserved D (TAB) Easy to mount Space savings High power density DS99593E(07/06) IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, pulse test 8 Ciss Coss 15 S 3900 pF 250 pF 19 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 26 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 29 ns td(off) RG = 5 Ω (External) 62 ns tf 27 ns Qg(on) 61 nC 18 nC 20 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 1 (TO-247, TO-3P) Source-Drain Diode Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 14 A ISM Repetitive 40 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, QRM IRM -di/dt = 100 A/μs VR = 100V 250 0.4 5 3 Dim. °C/W 0.21 2 Terminals: 1 - Gate 3 - Source 0.31 °C/W RthJC RthCS TO-247 (IXFH) Outline 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline ns μC A PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 14 27 VGS = 10V 7V 12 VGS = 10V 7V 24 21 6V ID - Amperes ID - Amperes 10 8 6 18 6V 15 12 9 4 6 5V 2 3 0 5V 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 3 6 9 15 18 21 24 27 30 Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 3.1 14 VGS = 10V VGS = 10V 2.8 12 2.5 RDS(on) - Normalized 6V 10 ID - Amperes 12 VDS - Volts VDS - Volts 5V 8 6 4 2.2 I D = 14A 1.9 1.6 I D = 7A 1.3 1 2 0.7 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 26 -25 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 16 2.8 VGS = 10V 2.6 14 TJ = 125ºC 2.4 12 2.2 ID - Amperes RDS(on) - Normalized 0 2 1.8 1.6 10 8 6 1.4 4 1.2 TJ = 25ºC 2 1 0.8 0 0 4 8 12 16 I D - Amperes © 2006 IXYS All rights reserved 20 24 28 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS Fig. 8. Transconductance 20 30 18 27 16 24 14 21 12 g f s - Siemens ID - Amperes Fig. 7. Input Admittance TJ = 125ºC 25ºC - 40ºC 10 8 15 12 6 9 4 6 2 3 0 TJ = - 40ºC 25ºC 125ºC 18 0 3.5 4 4.5 5 5.5 6 0 2 4 6 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 12 14 16 18 20 Fig. 10. Gate Charge 45 10 40 9 VDS =400V I D = 7A 8 35 I G = 10mA 7 30 VGS - Volts IS - Amperes 8 I D - Amperes 25 TJ = 125ºC 20 TJ = 25ºC 15 6 5 4 3 10 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 10 VSD - Volts 20 30 40 50 60 QG - NanoCoulombs Fig. 13. Maximum Transient Thermal Resistance Fig. 11. Capacitance 1.000 10,000 C iss 1,000 R(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz C oss 0.100 100 C rss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.010 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_14N80P (6J) 5-02-06.xls IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS TO-3P-3L PACKAGE Outline 1. GATE 2. DRAIN (COLLECTOR) 3. SOURCE (EMITTER) 4. DRAIN (COLLECTOR) ALL METAL AREA ARE TIN PLATED. Ref: IXYS CO 0170 RA © 2006 IXYS All rights reserved PLUS220 (IXFV) Outline