MBR2535CT, MBR2545CT SWITCHMODE] Power Rectifiers The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: www.kersemi.com Features • • • • Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Pb−Free Packages are Available* SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 35 and 45 VOLTS Mechanical Characteristics • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 1 2, 4 3 MARKING DIAGRAM 4 TO−220AB CASE 221A PLASTIC 1 2 AY WW B25x5G AKA 3 A Y WW B25x5 x G AKA = Assembly Location = Year = Work Week = Device Code = 3 or 4 = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device MBR2535CT MBR2535CTG MBR2545CT MBR2545CTG 1 Package Shipping TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail MBR2535CT, MBR2545CT Symbol Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR2535CT MBR2545CT Value VRRM VRWM VR Average Rectified Forward Current (Rated VR, TC = 160°C) Unit V 35 45 IF(AV) 30 A Peak Repetitive Forward Current, per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 150°C) IFRM 30 A Non−Repetitive Peak Surge Current per Diode Leg (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B ESD >400 >8000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA. THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit RJC RJA 1.5 50 °C/W Thermal Resistance,− Junction−to−Case − Junction−to−Ambient (Note 2) 2. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS (Per Diode) Symbol Characteristic Condition Min Typ Max Unit VF Instantaneous Forward Voltage (Note 3) IF = 15 Amp, TJ = 25°C IF = 15 Amp, TJ = 125°C IF = 30 Amp, TJ = 25°C IF = 30 Amp, TJ = 125°C − − − − − 0.50 − 0.65 0.62 0.57 0.82 0.72 V IR Instantaneous Reverse Current (Note 3) Rated dc Voltage, TJ = 25°C Rated dc Voltage, TJ = 125°C − − − 9.0 0.2 25 mA 3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. www.kersemi.com 2 MBR2535CT, MBR2545CT 200 100 TJ = 125°C 10 150°C 1.0 25°C 0.1 0 0.2 0.4 0.6 40 20 10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.004 0.002 0.8 1.2 1.0 1.4 1.6 1.8 100°C 75°C 25°C 10 0 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 48 40 36 32 dc 28 24 SQUARE WAVE 20 16 12 RATED VOLTAGE APPLIED RJC = 1.5°C/W 120 130 140 150 160 170 48 RATED VR APPLIED 44 40 36 RJA = 16°C/W (With TO-220 Heat Sink) RJA = 60°C/W (No Heat Sink) dc 32 28 24 20 16 SQUARE WAVE 12 8.0 dc 4.0 0 180 SQUARE WAVE 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 3. Current Derating, Per Device Figure 4. Current Derating, Per Device PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 110 125°C VF , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 44 8.0 4.0 0 TJ = 150°C IR , REVERSE CURRENT (mA) 100 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1000 32 SQUARE WAVE I (RESISTIVELOAD) PK + I 28 AV 24 I (CAPACITATIVELOAD) PK + 5.0 I 20 dc AV 16 10 12 20 8.0 TJ = 125°C 4.0 0 0 4.0 8.0 12 16 20 24 28 32 IF, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Forward Power Dissipation www.kersemi.com 3 36 40 180 MBR2535CT, MBR2545CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. http://onsemi.com 4 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04