NTGS3446 Power MOSFET 5.1 Amps, 20 Volts N−Channel TSOP−6 Features • • • • • • • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature Pb−Free Package Option for Green Manufacturing (G Suffix) http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX 20 V 36 m @ 4.5 V 5.1 A N−Channel Applications • Power Management in portable and battery−powered products, i.e. Drain 1 2 5 6 computers, printers, PCMCIA cards, cellular and cordless • Lithium Ion Battery Applications • Notebook PC Gate 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±12 V RJA Pd 244 0.5 °C/W Watts ID IDM 2.5 10 Amps Amps RJA Pd 128 1.0 °C/W Watts ID IDM 3.6 14 Amps Amps Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp 10 s) Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp 10 s) Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp 10 s) 62.5 2.0 °C/W Watts ID IDM 5.1 2.0 Amps Amps IS 5.1 A Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Maximum Lead Temperature for Soldering Purposes for 10 seconds TL 260 °C November, 2003 − Rev. 3 5 4 6 3 2 446 W 1 446 W TSOP−6 CASE 318G STYLE 1 = Device Code = Work Week PIN ASSIGNMENT Drain Drain Source 6 5 4 1 2 3 Drain Drain Gate ORDERING INFORMATION Device 1. Minimum FR−4 or G−10PCB, operating to steady state. 2. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick single−sided), operating to steady state. 3. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick single−sided), t < 5.0 seconds. Semiconductor Components Industries, LLC, 2003 MARKING DIAGRAM 1 RJA Pd Source Current (Body Diode) Source 4 NTGS3446T1 NTGS3446T1G Package Shipping† TSOP−6 3000/Tape & Reel TSOP−6 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTGS3446/D NTGS3446 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 20 − − 22 − − − − − − 1.0 25 − − − − 100 −100 0.6 − 0.85 −2.5 1.2 − − − 36 44 45 55 gFS − 12 − mhos Ciss − 510 750 pF Coss − 200 350 Crss − 60 100 td(on) − 9.0 16 tr − 12 20 td(off) − 35 60 tf − 20 35 QT − 8.0 15 Qgs − 2.0 − Qgd − 2.0 − − − 0.74 0.66 1.1 − trr − 20 − ta − 11 − tb − 9.0 − QRR − 0.01 − OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 85°C) Vdc Adc IDSS Gate−Body Leakage Current (VGS = ± 12 Vdc, VDS = 0) IGSS(f) IGSS(r) mV/°C nAdc ON CHARACTERISTICS (Note 4) Gate Threshold Voltage ID = 0.25 mA, VDS = VGS Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (VGS = 4.5 Vdc, ID = 5.1 Adc) (VGS = 2.5 Vdc, ID = 4.4 Adc) RDS(on) Forward Transconductance (VDS = 10 Vdc, ID = 5.1 Adc) Vdc mV/°C m DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 10 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 10 Vdc, ID = 1.0 Adc, VGS = 4.5 Vdc, RG = 6.0 ) Fall Time Gate Charge (VDS = 10 Vdc, ID = 5.1 Adc, VGS = 4.5 Vdc) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 4) (IS = 1.7 Adc, VGS = 0 Vdc) (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 85°C) Reverse Recovery Time (IS = 1.7 1 7 Adc, Adc VGS = 0 Vdc, Vdc diS/dt = 100 A/s) Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 VSD Vdc ns C 1.8 1.6 100 ID = 5.1 A VGS = 4.5 V td(off) tf 1.4 t, TIME (ns) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) NTGS3446 1.2 1 tr 10 td(on) 0.8 VDD = 10 V ID = 1.0 A VGS = 4.5 V 0.6 0.4 −50 −25 0 25 50 75 100 125 150 1 1 10 TJ, JUNCTION TEMPERATURE (°C) RG, GATE RESISTANCE () Figure 1. On−Resistance Variation with Temperature Figure 2. Resistive Switching Time Variation vs. Gate Resistance http://onsemi.com 3 100 NTGS3446 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE H A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L 6 S 1 5 4 2 3 B DIM A B C D G H J K L M S D G M J C 0.05 (0.002) H K MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0 10 2.50 3.00 STYLE 1: PIN 1. 2. 3. 4. 5. 6. INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0 10 0.0985 0.1181 DRAIN DRAIN GATE SOURCE DRAIN DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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