CUSTOMER PRELIMINARY 10 TO 3000 MHz SMA CASCADED AMPLIFIER A4C3120D A4C3120D Typical Values High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Output Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Third Order I.P. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Reverse Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Performance Thin Film Four-stage SMA Package A4C3120D 30.0 dB 3.4 dB +21.0 dBm +35 dBm 50 dB TO-8 Amplifier SMA Case (three- and four-stage) ˜ PRODUCT LABEL AREA SPECIFICATIONS* Parameter Typical Frequency (Min.) 10-3000 MHz 2.350 (59.70) Guaranteed 0 to 50 °C -55 to +85 °C 10-3000 MHz 10-3000 MHz Small Signal Gain (Min.) 30.0 dB 27.3 dB 26.3 dB Gain Flatness (Max.) ±0.7 dB ±1.3 dB ±1.5 dB Noise Figure (Max.) 1.0-3.0 GHz 0.2-1.0 GHz 2.7 dB 3.5 dB 4.2 dB 5.7 dB 4.7 dB 6.2 dB 1.7:1 1.9:1 2.0:1 +21.0 dBm +20.0 dBm +19.5 dBm Reverse Isolation 50 dB — — DC Current (Max.) 240 mA 250 mA 260 mA SWR (Max.) Input/Output Power Output (Min.) @ 1dB comp. DC BIAS 0.375 (9.52) * Measured in a 50-ohm system at +15 Vdc unless otherwise specified. GND 0.500 (12.70) MOUNTING SURFACE 0.460 (11.68) 0.095 (2.41) MOUNTING HOLE 2-56 UNC-2B x 0.15 DEEP THREADED INSERT (4) PLCS 1.000 (25.40) 0.290 (7.37) RF CONNECTOR SMA JACK (FEMALE) (2) PLCS 1.770 (44.96) T INTERMODULATION PERFORMANCE A4C3120D Typical @ 25 °C Second Order Harmonic Intercept Point. . . . . . . . . . . . . . . Second Order Two Tone Intercept Point . . . . . . . . . . . . . . . Third Order Two Tone Intercept Point . . . . . . . . . . . . . . . . . +71 dBm +65 dBm +35 dBm ABSOLUTE MAXIMUM RATINGS Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -62 to +125 °C Maximum Case Temperature . . . . . . . . . . . . . . . . . . . . . . . . +105 °C Maximum DC Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +17 Volts Maximum Continuous RF Input Power . . . . . . . . . . . . . . . . +15 dBm Maximum Short Term Input Power (1 Minute Max.) . . . . . . . 1 Watt Maximum Peak Power (3 µsec Max.) . . . . . . . . . . . . . . . . . . 50 Watts Maximum HBM ESD to RF Input . . . . . . . . . . . . . . . . . . . . . +1000 Volts Burn-in Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +85 °C Thermal Resistance1 (θjc) . . . . . . . . . . . . . . . . . . . . . . . . . . +37 °C/Watt Junction Temperature Rise Above Case (Tjc) . . . . . . . . . . . +66.8 °C 1 0.310 (7.87) Thermal resistance is based on total power dissipation. DIMENSIONS ARE IN INCHES [MILLIMETERS] 650-691-9800 • Fax: 650-962-6845 • Updates: www.teledynemicrowave.com • [email protected]