Switching Diodes MA3X153, MA3X153A Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 0.65 ± 0.15 1 3 + 0.1 • Small terminal capacitance, Ct • Two diodes are connected in series in the package 1.5 0.95 + 0.2 2.9 − 0.05 ■ Features 1.9 ± 0.2 0.65 ± 0.15 + 0.25 − 0.05 2 40 V MA3X153A Peak reverse voltage MA3X153A MA3X153 Forward current (DC) Single Peak forward current Single + 0.1 0.16 − 0.06 VR MA3X153 Reverse voltage (DC) 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Unit 0.8 Rating + 0.2 Symbol 1.1 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter 80 VRM 40 V 80 IF 100 Series mA 65 IFM 200 Series 0.4 − 0.05 For switching circuits mA 130 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1 : Anode 1 2 : Cathode 2 3 : Anode 2 JEDEC : TO-236 Cathode 1 EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol • MA3X153 : MC • MA3X153A : MP Internal Connection 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol MA3X153 IR MA3X153A Forward voltage (DC) Reverse voltage (DC) MA3X153 Conditions Max Unit VR = 40 V 0.1 µA VR = 75 V 0.1 VF IF = 100 mA VR IR = 100 µA Ct VR = 0 V, f = 1 MHz MA3X153A Terminal capacitance Reverse recovery time Min Typ 1.2 40 V V 80 5 pF *1 IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 150 ns trr1*2 IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 9 ns trr Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 2 and 3 *2 : Between pins 1 and 3 1 MA3X153, MA3X153A Switching Diodes IF V F 103 Ta = 25°C D2 (3-2) 2 10 1 10−1 D1 (1-3) D2 (3-2) 1 102 Ta = 125°C 2 Reverse current IR (µA) 102 Forward current IF (mA) Forward current IF (mA) D1 (1-3) 3 1 103 Ta = 25°C 3 D1 (1-3) 102 IR V R IF V F 103 10 1 10−1 D2 (3-2) 3 10 D1 (1-3) D2 (3-2) 1 2 1 10−1 D1 (1-3) 10−2 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 Ta = 25°C 0 0.2 0.4 0.6 0.8 1.0 10−2 1.2 0 Forward voltage VF (V) Forward voltage VF (V) IR VR 10 D2 (3-2) 20 30 40 50 Reverse voltage VR (V) VF Ta VF Ta 1.0 1.0 D1 (1-3) Ta = 125°C 0.8 3 D1 (1-3) 10−1 D2 (3-2) 1 10−2 2 D1 (1-3) Ta = 25°C 0.8 IF = 10 mA 0.6 3 mA 1 mA 0.4 3 0.2 D2 (3-2) 0.1 mA D1 (1-3) 1 Forward voltage VF (V) D2 (3-2) 1 Forward voltage VF (V) Reverse current IR (µA) 10 IF = 10 mA 3 mA 1 mA 0.6 0.1 mA 3 0.4 D2 (3-2) 1 2 0.2 2 10−3 20 40 60 80 0 −40 100 Reverse voltage VR (V) 0 40 80 Ambient temperature Ta IR Ta D1 (1-3) 1 102 VR = 80 V 80 V 40 V 10−1 D2 (3-2) Reverse current IR (µA) Reverse current IR (nA) 2 D1 (1-3) 3 D1 (1-3) D2 (3-2) 1 10 2 D2 (3-2) 1 10−1 10−2 40 80 120 160 Ct VR f = 1 MHz Ta = 25°C 40 V D2 (3-2) 1 0 Ambient temperature Ta (°C) VR = 40 V 3 D1 (1-3) 0 −40 160 (°C) IR T a 103 102 10 120 5 Terminal capacitance Ct (pF) 0 3 3 2 D1 (1-3) D2 (3-2) 1 1 2 D2 (3-2) 0.5 D1 (1-3) 0.3 0.2 10−3 −40 10−2 0 40 80 120 Ambient temperature Ta (°C) 2 −40 0 40 80 120 Ambient temperature Ta (°C) 0.1 0 10 20 30 40 Reverse voltage VR (V) 50