IRF7842PbF Applications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated DC-DC Converters l Synchronous Fet for Non-Isolated DC-DC Converters l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current Base Part Number Package Type IRF7842PbF SO-8 HEXFET® Power MOSFET VDSS RDS(on) max : Qg (typ.) 40V 5.0m @VGS = 10V 33nC A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7842PbF IRF7842TRPbF Absolute Maximum Ratings Max. Units Drain-to-Source Voltage Parameter 40 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 18 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 14 IDM Pulsed Drain Current 140 PD @TA = 25°C Power Dissipation VDS c PD @TA = 70°C f Power Dissipation f TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A W 2.5 1.6 W/°C °C 0.02 -55 to + 150 Thermal Resistance Parameter RθJL RθJA Notes 1 g Junction-to-Ambient fg Junction-to-Drain Lead through Typ. Max. Units ––– 20 °C/W ––– 50 are on page 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014 IRF7842PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage Parameter 40 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 4.0 5.0 mΩ ––– 4.7 5.9 VGS(th) Gate Threshold Voltage 1.35 ––– 2.25 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– - 5.6 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA VDS = 32V, VGS = 0V ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V S VDS = 20V, ID = 14A IGSS Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 81 ––– ––– Qg Total Gate Charge ––– 33 50 Qgs1 Pre-Vth Gate-to-Source Charge ––– 9.6 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 2.8 ––– Qgd Gate-to-Drain Charge ––– 10 ––– Qgodr Gate Charge Overdrive ––– 10.6 ––– Conditions VGS = 0V, ID = 250μA e = 14A e VGS = 10V, ID = 17A VGS = 4.5V, ID VDS = VGS, ID = 250μA VDS = 32V, VGS = 0V, TJ = 125°C VGS = -20V VDS = 20V nC VGS = 4.5V ID = 14A Q sw Switch Charge (Q gs2 + Q gd ) ––– 12.8 ––– Q oss Output Charge ––– 18 ––– nC Ω VDS = 16V, VGS = 0V RG Gate Resistance ––– 1.3 2.6 td(on) Turn-On Delay Time ––– 14 ––– VDD = 20V, VGS = 4.5V tr Rise Time ––– 12 ––– ID = 14A td(off) Turn-Off Delay Time ––– 21 ––– tf Fall Time ––– 5.0 ––– Ciss Input Capacitance ––– 4500 ––– Coss Output Capacitance ––– 680 ––– Crss Reverse Transfer Capacitance ––– 310 ––– ns e Clamped Inductive Load VGS = 0V pF VDS = 20V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. Max. Units ––– 50 mJ ––– 14 A Diode Characteristics Parameter IS Continuous Source Current Min. Typ. Max. ––– ––– 3.1 ––– ––– 140 (Body Diode) (Body Diode) c Conditions MOSFET symbol A Pulsed Source Current ISM Units showing the integral reverse p-n junction diode. e VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 14A, VGS = 0V trr Reverse Recovery Time ––– 99 150 ns TJ = 25°C, IF = 14A, VDD = 20V Q rr Reverse Recovery Charge ––– 11 17 nC di/dt = 100A/μs 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback e July 8, 2014 IRF7842PbF 1000 1000 100 BOTTOM TOP 10 1 2.5V ≤ 60μs PULSE WIDTH Tj = 25°C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V 2.5V 100 BOTTOM ≤ 60μs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α) 2.5V 10 0.1 100.0 T J = 150°C 10.0 T J = 25°C 1.0 VDS = 25V ≤ 60μs PULSE WIDTH 0.1 1.5 2.0 2.5 3.0 3.5 4.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V 2.5V www.irf.com © 2014 International Rectifier ID = 18A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback July 8, 2014 IRF7842PbF 100000 12 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 14A C, Capacitance (pF) C oss = C ds + C gd 10000 Ciss 1000 Coss Crss 10 8 6 4 2 0 100 1 10 0 100 40 60 80 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 1000.0 ISD, Reverse Drain Current (A) 20 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100.0 T J = 150°C 10.0 T J = 25°C 1.0 10 1msec 1 10msec Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS= 30V VDS= 20V www.irf.com © 2014 International Rectifier 1.2 0 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback July 8, 2014 1000 IRF7842PbF 2.4 18 VGS(th) Gate threshold Voltage (V) 16 ID , Drain Current (A) 14 12 10 8 6 4 2 2.0 ID = 250μA 1.6 1.2 0.8 0.4 0 25 50 75 100 125 -75 150 -50 -25 25 50 75 100 125 150 T J , Temperature ( °C ) T J , Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0 Fig 10. Threshold Voltage Vs. Temperature 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 Thermal Response ( Z thJA ) 10 1 R1 R1 0.1 τJ 0.01 τJ τ1 τ1 R2 R2 τ2 τ2 τ3 τC τ τ3 Ri (°C/W) τi (sec) 10.48 0.138167 26.83 1.8582 12.69 Ci= τi/Ri Ci i/Ri 44.8 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R3 R3 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014 100 RDS(on), Drain-to -Source On Resistance ( mΩ) IRF7842PbF 200 EAS, Single Pulse Avalanche Energy (mJ) 16 ID = 18A 12 8 T J = 125°C 4 TJ = 25°C 0 2.0 4.0 6.0 8.0 10.0 ID 6.7A 7.5A BOTTOM 14A TOP 160 120 80 40 0 25 VGS, Gate-to-Source Voltage (V) 50 75 100 125 150 Starting T J, Junction Temperature (°C) Fig 12. On-Resistance Vs. Gate Voltage Fig 13c. Maximum Avalanche Energy Vs. Drain Current 15V LD VDS L VDS DRIVER + VDD - D.U.T RG VGS 20V IAS tp + V - DD D.U.T A VGS 0.01Ω Pulse Width < 1μs Duty Factor < 0.1% Fig 13a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 14a. Switching Time Test Circuit VDS 90% 10% VGS td(on) I AS Fig 13b. Unclamped Inductive Waveforms 6 www.irf.com © 2014 International Rectifier tr td(off) tf Fig 14b. Switching Time Waveforms Submit Datasheet Feedback July 8, 2014 IRF7842PbF D.U.T Driver Gate Drive P.W. + + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Current Regulator Same Type as D.U.T. Vds Vgs 50KΩ 12V .2μF .3μF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 16. Gate Charge Test Circuit 7 www.irf.com © 2014 International Rectifier Qgs1 Qgs2 Qgd Qgodr Fig 17. Gate Charge Waveform Submit Datasheet Feedback July 8, 2014 IRF7842PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 8 6 7 6 MAX MIN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC e1 5 H E 1 6X 2 3 0.25 [.010] 4 A e e1 8X b 0.25 [.010] MILLIMET ERS MIN 5 A INCHES DIM B MAX .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° A C y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT NOT E S : 1. DIME NS IONING & T OLE RANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIME T ER 3. DIME NS IONS ARE S HOWN IN MILLIME T ERS [INCHES ]. 4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA. 5 DIME NS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEE D 0.15 [.006]. 6 DIME NS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEE D 0.25 [.010]. 6.46 [.255] 7 DIME NS ION IS T HE LE NGT H OF LE AD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking E XAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT E RNAT IONAL RECT IF IER LOGO XXXX F 7101 DAT E CODE (YWW) P = DE S IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014 IRF7842PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014 IRF7842PbF † Qualification information Consumer Qualification level (per JEDE C JE S D47F Moisture Sensitivity Level †† guidelines) MS L1 SO-8 †† (per JEDE C J-S T D-020D ) Yes RoHS compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.5mH RG = 25Ω, IAS = 14A. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board Rθ is measured at TJ approximately 90°C Revision History Date Comment 7/8/2014 • Updated data sheet based on corporate template. • Added Qual level on page10. • Added ordering information on page1 • Updated Max RG from "TBD" to "2.6Ohm" on page2. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014