NTE NTE2361 Silicon complementary transistors high speed switch Datasheet

NTE2361 (NPN) & NTE2362 (PNP)
Silicon Complementary Transistors
High Speed Switch
Description:
The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes
it possible for them to be driven directly from integrated circuits.
Features:
D Very Small–Sized Package
D High Breakdown Voltage: VCEO = 50V
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. For PNP device (NTE2362), voltage and current values are negative.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
ICBO
VCB = 40Vdc, IE = 0
–
–
0.1
µA
Emitter Cutoff Current
IEBO
VBE = 4Vdc
–
–
0.1
µA
DC Current Gain
hFE
VCE = 5V, IC = 10mA
200
–
400
NTE2361
–
200
–
MHz
NTE2362
–
300
–
MHz
Gain Bandwidth Product
fT
VCE = 10V,
IC = 50mA
Electrical Characteristics (Cont’d): (TC = 25°C unless otherwise specified)
Parameter
Symbol
Output Capacitance
Cob
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Test Conditions
Min
Typ
Max Unit
VCB = 10Vdc,
f = 1MHz
NTE2361
–
5.6
–
pF
NTE2362
–
3.7
–
pF
IC = 100mA,
IB = 10mA
NTE2361
–
0.15
0.4
V
NTE2362
–
0.1
0.3
V
IC = 100mA, IB = 10mA
–
0.8
1.2
V
Collector–Base Breakdown Voltage
V(BR)CBO
IC = 10µA, IE = 0
60
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO
IC = 100µA, RBE = ∞
50
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO
IE = 10µA, IC = ∞
5
–
–
V
VCC = 20V,
IC = 100mA,
IB1 = 10mA,
IB2 = 100mA
–
70
–
ns
–
400
–
ns
NTE2361
–
50
–
ns
NTE2362
–
70
–
ns
Rise Time
ton
Storage Time
tstg
Fall Time
tf
Note 1. For PNP device (NTE2362), voltage and current values are negative.
Note 2. Conditions apply to both except where noted.
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
E C B
.050 (1.27)
.050 (1.27)
.035 (0.9)
.102
(2.6)
Max
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