Transistors SMD Type PNP Silicon AF Transistors KC807A(BC807A) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1 High current gain. 0-0.1 +0.1 0.38-0.1 Low collector-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -45 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -500 mA Peak collector current ICM -1 A Base current IB -100 mA power dissipation PD 310 mW Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-to-base breakdown voltage VCBO IC = -10 A, IE = 0 -50 Collector-to-emitter breakdown voltage VCEO IC = -10 mA, IB = 0 -45 V IE = -10 -5 V Emitter-to-base breakdown voltage VEBO ICBO Collector cutoff current Emitter cutoff current IEBO A, IC = 0 VCB = -25 V, IE = 0 -100 nA VCB = -25 V, IE = 0 , TA = 150 -50 A -100 nA VEB = -4 V, IC = 0 KC807A-16 DC current gain * KC807A-25 hFE V IC = -100 mA, VCE = -1 V KC807A-40 Collector saturation voltage * VCE(sat) IC = -500 mA, IB = -50 mA Base to emitter voltage * VBE(sat) IC = -500 mA, IB = -50 mA 100 160 250 160 250 400 250 350 630 -0.7 -1.2 V V Collector-base capacitance CCb VCB = -10 V, f = 1 MHz 10 pF Emitter-base capacitance Ceb VEB = -0.5 V, f = 1 MHz 60 pF IC = -50 mA, VCE = -5 V, f = 100 MHz 200 MHz Transition frequency * Pulsed: PW fT 350 ìs, duty cycle 2% Marking NO. KC807A-16 KC807A-25 KC807A-40 Marking 5A 5B 5C www.kexin.com.cn 1