DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(on) max ID TA = +25°C 31mΩ@ VGS = -4.5V 5.2A 45mΩ@ VGS =-2.5V 4.3A V(BR)DSS Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability ideal for high-efficiency power management applications. Applications Mechanical Data DC-DC Converters Power Management Functions Analog Switch Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0072 grams (Approximate) D SOT23 G D ESD PROTECTED TO 3kV G Top View Gate Protection Diode S Pin Configuration S Internal Schematic Ordering Information (Note 4) Part Number DMP1045U-7 Notes: Case SOT-23 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 15P Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 DMP1045U Document number: DS35051 Rev. 5 - 2 Mar 3 15P = Marking Code YM = Date Code Marking Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM NEW PRODUCT -12V Features and Benefits 2012 Z Apr 4 May 5 2013 A Jun 6 1 of 6 www.diodes.com Jul 7 2014 B Aug 8 Sep 9 2015 C Oct O Nov N Dec D April 2015 © Diodes Incorporated DMP1045U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Steady State Continuous Drain Current (Note 5) VGS = -2.5V Steady State Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle=1%) (Note 5) Continuous Drain Current (Note 6) VGS = -2.5V ID Value -12 ±8 4.0 3.1 Units V V ID 3.3 2.6 A ID 5.2 4.2 A A 4.3 3.4 2 40 ID IS IDM A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Total Power Dissipation (Note 5) PD Thermal Resistance, Junction to Ambient (Note 5) Value 0.8 Units W °C/W RJA PD 168 Total Power Dissipation (Note 6) 1.3 W Thermal Resistance, Junction to Ambient (Note 6) RJA 99 °C/W Thermal Resistance, Junction to Case (Note 6) RJc 14.8 °C/W TJ, TSTG -55 to +150 °C Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage TJ = +25°C Static Drain-Source On-Resistance Symbol Min Typ BVDSS -12 — — — V VGS = 0V, ID = -250µA IDSS — -1.0 µA VDS = -12V, VGS = 0V IGSS — — ±10 µA VGS = 8V, VDS = 0V VGS(th) -0.3 — -0.55 -1.0 V VDS = VGS, ID = -250µA 26 31 31 45 mΩ 45 RDS(ON) Max Unit Test Condition VGS = -4.5V, ID = -4.0A VGS = -2.5V, ID = -3.5A VGS = -1.8V, ID = -2.7A Forward Transfer Admittance |Yfs| — 12 75 — S VDS = -5V, ID = -4A Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD — -0.6 — V VGS = 0V, IS = -1A Ciss — 1,357 — pF Output Capacitance Coss — 504 — pF Reverse Transfer Capacitance Gate Resistnace SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge Crss — Rg 235 14.1 — — pF Ω Qg Qgs — — 15.8 2.0 — — nC Gate-Source Charge Gate-Drain Charge Qgd — 3.9 — nC Turn-On Delay Time tD(on) — 15.7 — ns Turn-On Rise Time tr — 23.3 — ns Turn-Off Delay Time Turn-Off Fall Time tD(off) — — tf — 91.2 106.9 ns ns Notes: — — nC VDS = -10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -4A VDS = -10V, VGS = -4.5V, RL = 2.5Ω, RG = 3.0Ω 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP1045U Document number: DS35051 Rev. 5 - 2 2 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP1045U 20 20.0 VDS= 5.0V 18.0 16 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 14.0 12.0 10.0 8.0 6.0 12 8 4 4.0 2.0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 0 0 5 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 3 0.05 0.08 RDS(ON), DRAIN-SOURCE ON-RESISTANCE() RDS(ON), DRAIN-SOURCE ON-RESISTANCE( ) 0.0 0 0.06 VGS=2.5V 0.04 VGS=4.5V 0.02 VGS=8.0V 0 0 4 8 12 16 20 VGS= 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMP1045U Document number: DS35051 Rev. 5 - 2 3 of 6 www.diodes.com TA=125°C 0.04 0.03 TA=150°C TA=85°C TA=25°C 0.02 TA=-55°C 0.01 0 0 ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT 16.0 4 8 12 16 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.05 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 6 On-Resistance Variation with Temperature April 2015 © Diodes Incorporated DMP1045U 16 IS, SOURCE CURRENT (A) V GS(th), GATE THRESHOLD VOLTAGE (V) 20 1 0.8 0.6 ID= 1mA 0.4 ID= 250µA TA= 25C 12 8 4 0.2 0 0 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 100000 0.2 0.4 0.6 0.8 1 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.4 10000 CT , JUNCTION CAPACITANCE (pF) TA = 150C IDSS, LEAKAGE CURRENT (nA) 10000 1000 100 TA = 85 C 10 1 C iss 1000 C oss C rss TA = 25C f = 1MHz 100 0.1 0 0 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Drain-Source Leakage Current vs. Voltage 4 2 4 6 8 10 VDS , DRAIN-SOURCE VOLTAGE (V) Fig 10 Typical Junction Capacitance 12 8 VDS=-10V, ID=-4A 6 VGS (V) NEW PRODUCT 1.2 4 2 0 0 4 8 12 16 20 24 QG -(nC) Fig. 11 Gate Charge Characteristics DMP1045U Document number: DS35051 Rev. 5 - 2 28 4 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP1045U NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 0.1 0.01 RJA(t)=r(t) * RJA RJA=164C/W Duty Cycle, D=t1/ t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Fig. 12 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm G DMP1045U Document number: DS35051 Rev. 5 - 2 5 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP1045U Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. NEW PRODUCT Y Z Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 C X E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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