Excel ES29DS640ET-90RTG 4mbit(512kx 8/256k x 16) cmos 3.0 volt-only, boot sector flash memory Datasheet

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ES29LV400D
4Mbit(512Kx 8/256K x 16)
CMOS 3.0 Volt-only, Boot Sector Flash Memory
GENERAL FEATURES
• Minimum 100,000 program/erase cycles per sector
• 20 Year data retention at 125oC
• Single power supply operation
- 2.7V -3.6V for read, program and erase operations
SOFTWARE FEATURES
• Sector Structure
- 16Kbyte x 1, 8Kbyte x 2, 32Kbyte x 1 boot sectors
- 64Kbyte x 7sectors
•
•
•
•
•
• Top or Bottom boot block
- ES29LV400DT for Top boot block device
- ES29LV400DB for Bottom boot block device
• Package Options
- 48-pin TSOP
- 48-ball FBGA ( 6 x 8 mm )
- Pb-free packages
- All Pb-free products are RoHS-Compliant
Erase Suspend / Erase Resume
Data# poll and toggle for Program/erase status
Unlock Bypass program
Autoselect mode
Auto-sleep mode after tACC + 30ns
HARDWARE FEATURES
• Hardware reset input pin ( RESET#)
- Provides a hardware reset to device
- Any internal device operation is terminated and the
device returns to read mode by the reset
• Low Vcc write inhibit
• Manufactured on 0.18um process technology
• Compatible with JEDEC standards
- Pinout and software compatible with single-power
supply flash standard
• Ready/Busy# output pin ( RY/BY#)
- Provides a program or erase operational status
about whether it is finished for read or still being
progressed
• Read access time
- 70ns for regulated Vcc range (3.0V - 3.6V)
- 90ns/120n for normal Vcc range ( 2.7V - 3.6V )
• Sector protection / unprotection ( RESET# , A9 )
- Hardware method of locking a sector to prevent
any program or erase operation within that sector
- Two methods are provided :
- In-system method by RESET# pin
- A9 high-voltage method for PROM programmers
• Program and erase time
- Program time : 6us/byte, 8us/word ( typical )
- Sector erase time : 0.7sec/sector ( typical )
• Temporary Sector Unprotection ( RESET# )
- Allows temporary unprotection of previously
protected sectors to change data in-system
DEVICE PERFORMANCE
• Power consumption (typical values)
- 200nA in standby or automatic sleep mode
- 7mA active read current at 5 MHz
- 15mA active write current during program or erase
ES29LV400D
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GENERAL PRODUCT DESCRIPTION
The ES29LV400 is completely compatible with the
JEDEC standard command set of single power supply Flash. Commands are written to the internal
command register using standard write timings of
microprocessor and data can be read out from the
cell array in the device with the same way as used in
other EPROM or flash devices.
The ES29LV400 is a 4 megabit, 3.0 volt-only flash
memory device, organized as 512K x 8 bits (Byte
mode) or 256K x 16 bits (Word mode) which is configurable by BYTE#. Four boot sectors and seven
main sectors are provided : 16Kbytes x 1, 8Kbytes
x 2, 32Kbytes x 1 and 64Kbytes x 7. The device is
manufactured with ESI’s proprietary, high performance and highly reliable 0.18um CMOS flash
technology. The device can be programmed or
erased in-system with standard 3.0 Volt Vcc supply
( 2.7V-3.6V) and can also be programmed in standard EPROM programmers. The device offers minimum endurance of 100,000 program/erase cycles
and more than 10 years of data retention.
The ES29LV400 offers access time as fast as
70ns, allowing operation of high-speed microprocessors without wait states. Three separate control
pins are provided to eliminate bus contention : chip
enable (CE#), write enable (WE#) and output
enable (OE#).
All program and erase operation are automatically
and internally performed and controlled by embedded program/erase algorithms built in the device.
The device automatically generates and times the
necessary high-voltage pulses to be applied to the
cells, performs the verification, and counts the number of sequences. Some status bits (DQ7, DQ6 and
DQ5) read by data# polling or toggling between
consecutive read cycles provide to the users the
internal status of program/erase operation: whether
it is successfully done or still being progressed.
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PRODUCT SELECTOR GUIDE
Family Part Number
ES29LV400
Voltage Range
3.0 ~ 3.6V
2.7 ~ 3.6V
Speed Option
70R
90
120
Max Access Time (ns)
70
90
120
CE# Access (ns)
70
90
120
OE# Access (ns)
30
35
50
FUNCTION BLOCK DIAGRAM
RY/BY#
Vcc
Vcc Detector
Vss
Timer/
Counter
DQ0-DQ15(A-1)
Analog Bias
Generator
WE#
Command
Register
RESET#
Input/Output
Buffers
Write
State
Machine
Data Latch/
Sense Amps
Sector Switches
Y-Decoder
Y-Decoder
X-Decoder
Cell Array
CE#
OE#
BYTE#
ES29LV400D
Address Latch
A<0:17>
Chip Enable
Output Enable
Logic
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PIN DESCRIPTION
Pin
A0-A17
Description
18 Addresses
DQ0-DQ14
15 Data Inputs/Outputs
DQ15/A-1
DQ15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
CE#
Chip Enable
OE#
Output Enable
WE#
Write Enable
RESET#
Hardware Reset Pin, Active Low
BYTE#
Selects 8-bit or 16-bit mode
RY/BY#
Ready/Busy Output
Vcc
3.0 volt-only single power supply
(see Product Selector Guide for speed options and voltage supply tolerances)
Vss
Device Ground
NC
Pin Not Connected Internally
LOGIC SYMBOL
18
16 or 8
A0 ~ A17
DQ0 ~ DQ15
(A-1)
CE#
OE#
WE#
RESET#
RY/BY#
BYTE#
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CONNECTION DIAGRAM
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
NC
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
48-Pin Standard TSOP
ES29LV400
A16
BYTE#
Vss
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
CE#
A0
48-Ball FBGA (6 x 8 mm)
(Top View, Balls Facing Down)
A
B
C
D
E
F
G
H
6
A13
A12
A14
A15
A16
BYTE#
DQ15/
A-1
Vss
5
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
4
WE#
RESET#
NC
NC
DQ5
DQ12
Vcc
DQ4
3
RY/
BY#
NC
NC
NC
DQ2
DQ10
DQ11
DQ3
2
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
1
A3
A4
A2
A1
A0
CE#
OE#
Vss
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DEVICE BUS OPERATIONS
Several device operational modes are provided in
the ES29LV400 device. Commands are used to initiate the device operations. They are latched and
stored into internal registers with the address and
data information needed to execute the device
operation.
on the device address inputs produce valid data on
the device data outputs. The device stays at the read
mode until another operation is activated by writing
commands into the internal command register. Refer
to the AC read cycle timing diagrams for further
details ( Fig. 16 ).
The available device operational modes are listed
in Table 1 with the required inputs, controls, and the
resulting outputs. Each operational mode is
described in further detail in the following subsections.
Word/Byte Mode Configuration ( BYTE# )
The device data output can be configured by BYTE#
into one of two modes : word and byte modes. If the
BYTE# pin is set at logic ‘1’, the device is configured
in word mode, DQ0 - DQ15 are active and controlled
by CE# and OE#. If the BYTE# pin is set at logic ‘0’,
the device is configured in byte mode, and only data
I/O pins DQ0 - DQ7 are active and controlled by CE#
and OE#. The data I/O pins DQ8 - DQ14 are tristated, and the DQ15 pin is used as an input for the
LSB (A-1) address.
Read
The internal state of the device is set for the read
mode and the device is ready for reading array data
upon device power-up, or after a hardware reset. To
read the stored data from the cell array of the
device, CE# and OE# pins should be driven to VIL
while WE# pin remains at VIH. CE# is the power
control and selects the device. OE# is the output
control and gates array data to the output pins.
Standby Mode
When the device is not selected or activated in a
system, it needs to stay at the standby mode, in
which current consumption is greatly reduced with
outputs in the high impedance state.
Word or byte mode of output data is determined by
the BYTE# pin. No additional command is needed
in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses
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set-up cycle and the last cycle with the program data
and addresses. In this mode, two unlock cycles are
saved ( or bypassed ).
The device enters the CMOS standby mode when
CE# and RESET# pins are both held at Vcc+0.3V.
(Note that this is a more restricted voltage range
than VIH.) If CE# and RESET# are held at VIH, but
not within Vcc+0.3V, the device will be still in the
standby mode, but the standby current will be
greater than the CMOS standby current (0.2uA typically). When the device is in the standby mode, only
standard access time (tCE) is required for read
access, before it is ready for read data. And even if
the device is deselected by CE# pin during erase or
programming operation, the device draws active current until the operation is completely done. While the
device stays in the standby mode, the output is
placed in the high impedance state, independent of
the OE# input.
Sector Addresses
The entire memory space of cell array is divided into
a many of small sectors: 16Kbytes x 1, 8Kbytes x 2,
32Kbytes x 1 and 64Kbytes x 7 main sectors. In
erase operation, a single sector, multiple sectors, or
the entire device (chip erase) can be selected for
erase. The address space that each sector occupies
is shown in detail in the Table 3-4.
Autoselect Mode
Flash memories are intended for use in applications
where the local CPU alters memory contents. In
such applications, manufacturer and device identification (ID) codes must be accessible while the
device resides in the target system ( the so called
“in-system program”). On the other hand, signature
codes have been typically accessed by raising A9
pin to a high voltage in PROM programmers. However, multiplexing high voltage onto address lines is
not the generally desired system design practice.
Therefore, in the ES29LV400 device an autoselect
command is provided to allow the system to access
the signature codes without any high voltage. The
conventional A9 high-voltage method used in the
PROM programers for signature codes are still supported in this device.
If the system writes the autoselect command
sequence, the device enters the Autoselect mode.
The system can then read some useful codes such
as manufacturer and device ID from the internal registers on DQ7 - DQ0. Standard read cycle timings
apply in this mode. In the Autoselect mode, the following three informations can be accessed through
either autoselect command method or A9 high-voltage autoselect method. Refer to the Table 2.
The device can enter the deep power-down mode
where current consumption is greatly reduced down
to less than 0.2uA typically by the following three
ways:
- CMOS standby ( CE#, RESET# = Vcc + 0.3V )
- During the device reset ( RESET# = Vss + 0.3V )
- In Autosleep Mode ( after tACC + 30ns )
Refer to the CMOS DC characteristics Table 7 for
further current specification.
Autosleep Mode
The device automatically enters a deep power-down
mode called the autosleep mode when addresses
remain stable for tACC+30ns. In this mode, current
consumption is greatly reduced ( less than 0.2uA
typical ), regardless of CE#, WE# and OE# control
signals.
Writing Commands
To write a command or command sequences to initiate some operations such as program or erase, the
system must drive WE# and CE# to VIL, and OE# to
VIH. For program operations, the BYTE# pin determines whether the device accepts program data in
bytes or words. Refer to “BYTE# timings for Write
Operations” in the Fig. 19 for more information.
- Manufacturer ID
- Device ID
- Sector protection verify
Hardware Device Reset ( RESET# )
The RESET# pin provides a hardware method of
resetting the device to read array data. When the
RESET# pin is driven low for at least a period of tRP ,
Unlock Bypass Mode
To reduce more the programming time, an unlockbypass mode is provided. Once the device enters
this mode, only two write cycles are required to initiate the programming operation instead of four
cycles in the normal program command sequences
which are composed of two unlock cycles, program
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the device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the
RESET# pulse The device also resets the internal
state machine to reading array data. The operation
that was interrupted should be reinitiated once after
the device is ready to accept another command
sequence, to ensure data integrity.
Sector protection can be implemented via two
methods.
- In-system protection
- A9 High-voltage protection
To check whether the sector protection was successfully executed or not, another operation called
“protect verification” needs to be performed after
the protection operation on a sector. All protection
and protect verifications provided in the device are
summarized in detail at the Table 1.
CMOS Standby during Device Reset
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at Vss + 0.3V, the
device draws the greatly reduced CMOS standby
current ( ICC4 ). If RESET# is held at VIL but not
within Vss+0.3V, the standby current will be greater.
In-System Protection
“In-system protection”, the primary method,
requires VID (11.5V~12.5V) on the RESET# with
A6=0, A1=1, and A0=0. This method can be implemented either in-system or via programming equipment. This method uses standard microprocessor
bus cycle timing. Refer to Fig. 26 for timing diagram
and Fig. 2 for the protection algorithm.
RY/BY# and Terminating Operations
If RESET# is asserted during a program or erase
operation, the RY/BY# pin remains a “0” (busy) until
the internal reset operation is completed, which
requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to
determine whether the reset operation is completed.
If RESET# is asserted when a program or erase
operation is not executing (RY/BY# pin is “1”), the
reset operation is completed within a time of tREADY
(not during Embedded Algorithms). The system can
read data after the RESET# pin returns to VIH, which
requires a time of tRH.
A9 High-Voltage Protection
“High-voltage protection”, the alternate method
intended only for programming equipment, must
force VID (11.5~12.5V) on address pin A9 and control pin OE# with A6=0, A1=1 and A0=0. Refer to
Fig. 28 for timing diagram and Fig. 4 for the protection algorithm.
RESET# tied to the System Reset
SECTOR UNPROTECTION
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the
Flash memory, enabling the system to read the bootup firmware from the Flash memory.Refer to the AC
Characteristics tables for RESET# parameters and
to Fig. 17 for the timing diagram.
The previously protected sectors must be unprotected before modifying any data in the sectors.
The sector unprotection algorithm unprotects all
sectors in parallel. All unprotected sectors must first
be protected prior to the first sector unprotection
write cycle to avoid any over-erase due to the intrinsic erase characteristics of the protection cell. After
the unprotection operation, all previously protected
sectors will need to be individually re-protected.
Standard microprocessor bus cycle timings are
used in the unprotection and unprotect verification
operations. Three unprotect methods are provided
in the ES29LV400 device. All unprotection and
unprotect verification cycles are summarized in
detail at the Table 1.
SECTOR PROTECTION
The ES29LV400 features hardware sector protection. In the device, sector protection is performed on
the sector previously defined in the Table 3-4. Once
after a sector is protected, any program or erase
operation is not allowed in the protected sector. The
previously protected sectors must be unprotected by
one of the unprotect methods provided here before
changing data in those sectors.
ES29LV400D
- In-system unprotection
- A9 High-voltage unprotection
- Temporary sector unprotection
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In-System Unprotection
The command register and all internal program/
erase circuits are disabled, and the device resets to
the read mode. Subsequent writes are ignored until
Vcc is greater than VLKO. The system must provide
proper signals to the control pins to prevent unintentional writes when Vcc is greater than VLKO.
“In-system unprotection”, the primary method,
requires VID (11.5V~12.5V) on the RESET# with
A6=1, A1=1, and A0=0. This method can be implemented either in-system or via programming equipment. This method uses standard microprocessor
bus cycle timing. Refer to Fig. 26 for timing diagram
and Fig. 3 for the unprotection algorithm.
Write Pulse “Glitch” Protection
Noise pulses of less than 5ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
A9 High-Voltage Unprotection
“High-voltage unprotection”, the alternate method
intended only for programming equipment, must
force VID (11.5~12.5V) on address pin A9 and control pin OE# with A6=1, A1=1 and A0=0. Refer to
Fig. 29 for timing diagram and Fig. 5 for the unprotection algorithm.
Logical inhibit
Temporary Sector Unprotect
Power-up Write Inhibit
This feature allows temporary unprotection of previously protected sectors to change data in-system.
The Sector Unprotect mode is activated by setting
the RESET# pin to VID (11.5V-12.5V). During this
mode, formerly protected sectors can be programmed or erased by selecting the sector
addresses. Once VID is removed from the RESET#
pin, all the previously protected sectors are protected again. Fig. 1 shows the algorithm, and Fig. 25
shows the timing diagrams for this feature.
If WE#=CE#=VIL and OE#=VIH during power up,
the device does not accept any commands on the
rising edge of WE#. The internal state machine is
automatically reset to the read mode on power-up.
Write cycles are inhibited by holding any one of
OE#=VIL, CE#=VIH or WE#=VIH. To initiate a write
cycle, CE# and WE# must be a logical zero while
OE# is a logical one.
START
RESET# = VID
(Note 1)
HARDWARE DATA PROTECTION
The ES29LV400 device provides some protection
measures against accidental erasure or programming caused by spurious system level signals that
may exist during power transition. During power-up,
all internal registers and latches in the device are
cleared and the device automatically resets to the
read mode. In addition, with its internal state
machine built-in the device, any alteration of the
memory contents or any initiation of new operationcan only occur after successful completion of specific command sequences. And several features are
incorporated to prevent inadvertent write cycles
resulting from Vcc power-up and power-down transition or system noise.
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors are unprotected .
2. All previously protected sectors are protected once again.
Low Vcc Write inhibit
When Vcc is less than VLKO, the device does not
accept any write cycles. This protects data during
Vcc power-up and power-down.
ES29LV400D
Figure 1. Temporary Sector Unprotect
Operation
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Table 1. ES29LV400 Device Bus Operations
CE#
OE#
WE#
RESET#
Addresses
(Note 1)
DQ0
~
DQ7
Read
L
L
H
H
AIN
Write
L
H
L
H
Vcc+
0.3V
X
X
L
H
X
Operation
DQ8~DQ15
BYTE#
= VIH
BYTE#
= VIL
DOUT
DOUT
DQ8~DQ14 = High-Z,
DQ15 = A-1
AIN
(Note 3)
(Note 3)
Vcc+
0.3V
X
High-Z
High-Z
H
H
X
High-Z
High-Z
X
X
L
X
High-Z
High-Z
L
H
L
VID
SA,A6=L,
A1=H,A0=L
(Note 3)
X
X
Sector Unprotect
(Note 2)
L
H
L
VID
SA,A6=H,
A1=H,A0=L
(Note 3)
X
X
Temporary Sector
Unprotect
X
X
X
VID
AIN
(Note 3)
(Note 3)
High-Z
Sector protect
L
VID
L
H
SA,A9=VID,
A6=L,
A1=H,A0=L
(Note 3)
(Note 3)
High-Z
H
SA,A9=VID,
A6=H,
A1=H,A0=L
Standby
High-Z
Output Disable
Reset
Sector Protect
(Note 2)
In-system
A9 High-Voltage Method
Sector unprotect
VID
L
L
Legend: L=Logic Low=VIL, H=Logic High=VIH, VID=11.5-12.5V, X=Don’t Care, SA=Sector Address, AIN=Address In, DIN=Data In,
DOUT=Data Out
Notes:
1. Addresses are A17:A0 in word mode (BYTE#=VIH) , A17:A-1 in byte mode (BYTE#=VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Protection and Unprotection” section.
3. DIN or DOUT as required by command sequence, data polling, or sector protection algorithm.
Table 2. Autoselect Codes (A9 High-Voltage Method)
Description
CE# OE# WE#
A17
to
A12
A11
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ8~DQ15
BYTE# BYTE#
= VIH
= VIL
DQ7~DQ0
ManufactureID:ESI
L
L
H
X
X
VID
X
L
X
L
L
X
X
4Ah
Device ID:
ES29LV400
L
L
H
X
X
VID
X
L
X
L
H
22h
X
B9h(T),BAh(B)
Sector Protection
Verification
L
L
H
SA
X
VID
X
L
X
H
L
X
X
01h(protected)
00h(unprotected)
Legend: T= Top Boot Block, B = Bottom Boot Block, L=Logic Low=VIL, H=Logic High=VIH, SA=Sector Address, X = Don’t care
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Table 3. Top Boot Sector Addresses (ES29LV400DT)
Sector
Sector address
A17~A12
Sector Size
(Kbytes/Kwords)
(X8)
Address Range
(X16)
Address Range
SA0
000XXX
64/32
00000h~0FFFFh
00000h~07FFFh
SA1
001XXX
64/32
10000h~1FFFFh
08000h~0FFFFh
SA2
010XXX
64/32
20000h~2FFFFh
10000h~17FFFh
SA3
011XXX
64/32
30000h~3FFFFh
18000h~1FFFFh
SA4
100XXX
64/32
40000h~4FFFFh
20000h~27FFFh
SA5
101XXX
64/32
50000h~5FFFFh
28000h~2FFFFh
SA6
110XXX
64/32
60000h~6FFFFh
30000h~37FFFh
SA7
1110XX
32/16
70000h~77FFFh
38000h~3BFFFh
SA8
111100
8/4
78000h~79FFFh
3C000h~3CFFFh
SA9
111101
8/4
7A000h~7BFFFh
3D000h~3DFFFh
SA10
11111X
16/8
7C000h~7FFFFh
3E000h~3FFFFh
Remark
Main Sector
Boot Sector
Note:
The addresses range is A17:A-1 in byte mode (BYTE#=VIL) or A17:A0 in word mode (BYTE#=VIH).
Table 4. Bottom Boot Sector Addresses (ES29LV400DB)
Sector
Sector address
A17~A12
Sector Size
(Kbytes/Kwords)
(X8)
Address Range
(X16)
Address Range
SA0
00000X
16/8
00000h~03FFFh
00000h~01FFFh
SA1
000010
8/4
04000h~05FFFh
02000h~02FFFh
SA2
000011
8/4
06000h~07FFFh
03000h~03FFFh
SA3
0001XX
32/16
08000h~0FFFFh
04000h~07FFFh
SA4
001XXX
64/32
10000h~1FFFFh
08000h~0FFFFh
SA5
010XXX
64/32
20000h~2FFFFh
10000h~17FFFh
SA6
011XXX
64/32
30000h~3FFFFh
18000h~1FFFFh
SA7
100XXX
64/32
40000h~4FFFFh
20000h~27FFFh
SA8
101XXX
64/32
50000h~5FFFFh
28000h~2FFFFh
SA9
110XXX
64/32
60000h~6FFFFh
30000h~37FFFh
SA10
111XXX
64/32
70000h~7FFFFh
38000h~3FFFFh
Remark
Boot Sector
Main Sector
Note:
The addresses range is A17:A-1 in byte mode (BYTE#=VIL) or A17:A0 in word mode (BYTE#=VIH).
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In-System Protection / Unprotection Method
START
START
Protect all sectors:
The indicated portion of the sector
protect algorithm
must be performed
for all unprotected
sectors prior to
issuing the first
sector unprotect
address
COUNT = 1
RESET# = VID
Wait 1us
Temporary Sector
Unprotect Mode
No
First Write
Cycle = 60h?
COUNT = 1
RESET# = VID
Wait 1us
First Write
Cycle = 60h?
Yes
Temporary Sector
Unprotect Mode
Yes
Set up sector
address
No
Sector Protect:
Write 60h to sector address with
A6 = 0, A1 = 1,
A0 = 0
All sectors
protected ?
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector address with
A6 = 1, A1 = 1,
Wait 150us
Verify Sector
Protect:
Write 40h to sector address with
A6 = 0, A1 = 1,
A0 = 0
Increment
COUNT
No
Wait 15ms
Reset
COUNT = 1
Read from sector address with
A6 = 0, A1 = 1,
A0 = 0
Verify Sector
Unprotect:
Write 40h to sector address with
A6 = 1, A1 = 1,
A0 = 0
Increment
COUNT
Set up next
sector address
No
Read from sector address with
A6 = 1, A1 = 1,
A0 = 0
No
COUNT=25?
Yes
Data = 01h?
No
Yes
No
Device failed
Protect another
sector?
Yes
No
Remove VID
from RESET#
COUNT
=1000?
Data = 00h?
Yes
Yes
Device failed
Last sector
verified?
No
Yes
Write reset
command
Remove VID from
RESET#
Sector Protect
complete
Write reset
command
Sector Unprotect
complete
Figure 3. In-System Sector
Unprotect Algorithm
Figure 2. In-System Sector
Protect Algorithm
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A9 High-Voltage Method
Start
Note: All sectors must be
previously protected.
Start
COUNT = 1
COUNT = 1
SET A9=OE#=VID
SET A9=OE#=VID
CE#, A0=VIL ,
RESET#,
A6, A1=VIH
Set Sector Address
A<17 :12>
CE#, A6, A0=VIL
RESET#, A1=VIH
SET WE# = VIL
SET WE# = VIL
Wait 15ms
Wait 150 us
SET WE# = VIH
SET WE# = VIH
Increase COUNT
Increase COUNT
CE#,OE#, A0=VIL
RESET#, A6, A1=VIH
CE#,OE#,A6,A0=VIL
RESET#, A1 = VIH
Set Sector AddressA<17 :12>
Read Data
No
Read Data
No
No
COUNT= 25?
Data = 01h?
No
COUNT=1000?
Yes
Data = 00h?
Increase Sector
Address
Yes
Yes
Device failed
Yes
Yes
Protect Another
Sector ?
Device failed
No
The Last Sector
Address ?
No
Remove VID from
A9 and Write
Reset Command
Yes
Remove VID from A9 and
Write Reset Command
Sector Protection
Complete
Sector Unprotection
Complete
Figure 5. Sector Un-Protection Algorithm
(A9 High-Voltage Method)
Figure 4. Sector Protection Algorithm
(A9 High-Voltage Method)
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COMMAND DEFINITIONS
the Device Bus Operations section for more information.The Read-Only Operations table provides the
read parameters, and Fig. 16 shows the timing diagram
Writing specific address and data commands or
sequences into the command register initiates
device operations. Table 5 defines the valid register
command sequences. Note that writing incorrect
address and data values or writing them in the
improper sequence may place the device in an
unknown state. A reset command is required to
return the device to normal operation.
RESET COMMAND
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched
on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for
timing diagrams.
The reset command may be written between the
sequence cycles in an erase command sequence
before erasing begins. This resets the device to
which the system was writing to the read mode.
Once erasure begins, however, the device ignores
reset commands until the operation is complete.
READING ARRAY DATA
The device is automatically set to reading array data
after device power-up. No commands are required
to retrieve data. The device is ready to read array
data after completing an Embedded Program or
Embedded Erase algorithm.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device
to which the system was writing to the read mode. If
the program command sequence is written to a sector that is in the Erase Suspend mode, writing the
reset command returns the device to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the
operation is complete.
After the device accepts an Erase Suspend command, the device enters the erase-suspend-read
mode, after which the system can read data from
any non-erase-suspended sector. After completing a
programming operation in the Erase Suspend mode,
the system may once again read array data with the
same exception. See the Erase Suspend/Erase
Resume Commands section for more information.
The reset command may be written between the
sequence cycles in an autoselect command
sequence. Once in the autoselect mode, the reset
command must be written to return to the read
mode. If the device entered the autoselect mode
while in the Erase Suspend mode, writing the reset
command returns the device to the erase-suspendread mode.
The system must issue the reset command to return
the device to the read (or erase-suspend-read)
mode if DQ5 goes high during an active program or
erase operation, or if the device is in the autoselect
mode. See the next section, Reset Command, for
more information.
If DQ5 goes high during a program or erase operation, writing the reset command returns the device to
the read mode (or erase-suspend-read mode if the
device was in Erase-Suspend).
See also Requirements for Reading Array Data in
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Command Definitions
Table 5. ES29LV400 Command Definitions
Read (Note 6)
Reset (Note 7)
Autoselect (Note 8)
Manufacturer ID
Device ID (Top)
Device ID (Bottom)
Sector Protect Verify
(Note 9)
Program
Unlock Bypass
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Bus Cycles (Notes 2~5)
Cycles
Command
Sequence
(Note 1)
First
Addr
Data
1
RA
RD
1
XXX
F0
4
4
4
4
4
3
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
Second
AA
AA
AA
AA
AA
AA
Addr
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
Third
Data
A0
PA
PD
90
XXX
00
Sector Erase
Word
Byte
6
AAA
555
AAA
AA
AA
Erase Suspend (Note 12)
1
XXX
B0
Erase Resume (Note 13)
1
XXX
30
555
2AA
555
555
AAA
555
55
XXX
6
555
AAA
55
XXX
Byte
555
AAA
55
2
Chip Erase
555
AAA
55
2
2AA
AAA
55
Unlock Bypass Reset (Note 11)
555
555
55
Unlock Bypass Program (Note 10)
Word
Addr
AAA
555
55
AAA
555
55
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
AAA
Fourth
Fifth
Data
Addr
Data
90
X00
4A
90
90
90
A0
X01
X02
X01
X02
(SA)X02
(SA)X04
PA
Addr
Sixth
Data
Addr
Data
B9
BA
00/01
PD
20
80
80
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
55
55
555
AAA
SA
10
30
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A17-A12 uniquely select any sector.
Notes:
9. The data is 00h for an unprotected sector and 01h for a
protected sector.
10. The Unlock Bypass command is required prior to the UnlockBypass Program command.
11. The Unlock Bypass Reset command is required to return
to the read mode when the device is in the unlock bypass
mode.
12. The system may read and program in non-erasing sectors,
or enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during
a sector erase operation.
13. The Erase Resume command is valid only during the Erase
Suspend mode.
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
4. Data bits DQ15-DQ8 are don’t care in command sequences,
except for RD and PD
5. Unless otherwise noted, address bits A17-A11 are don’t cares.
6. No unlock or command cycles required when device is in
read mode.
7. The Reset command is required to return to the read mode
(or to the erase-suspend-read mode if previously in Erase
Suspend) when a device is in the autoselect mode, or if DQ5
goes high (while the device is providing status information).
8. The fourth cycle of the autoselect command sequence
is a read cycle. Data bits DQ15-DQ8 are don’t care. See the
Autoselect Command Sequence section for more information.
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AUTOSELECT COMMAND
BYTE / WORD PROGRAM
The autoselect command sequence allows the host
system to access the manufacturer and device
codes, and determine whether or not a sector is
protected, including information about factorylocked or customer lockable version.
The system may program the device by word or
byte, depending on the state of the BYTE# pin.
Programming is a four-bus-cycle operation. The
program command sequence is initiated by writing
two unlock write cycles, followed by the program
set-up command. The program address and data
are written next, which in turn initiate the Embedded
Program algorithm. The system is not required to
provide further controls or timings. The device automatically provides internally generated program
pulses and verifies the programmed cell margin.
Table 5 shows the address and data requirements
for the byte program command sequence. Note that
the autoselect is unavailable while a programming
operation is in progress.
Identifier Code
Address
Data
Manufacturer ID
00h
4Ah
Device ID
01h
B9h(T),
BAh(B)
Sector Protect Verify
(SA)02h
00 / 01
Table 5 shows the address and data requirements.
This method is an alternative to “A9 high-voltage
method” shown in Table 2, which is intended for
PROM programmers and requires VID on address
pin A9. The autoselect command sequence may be
written to an address within sector that is either in
the read mode or erase-suspend-read mode. The
auto-select command may not be written while the
device is actively programming or erasing. The
autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command.
The device then enters the autoselect mode. The
system may read at any address any number of
times without initiating another autoselect command sequence.
START
Write Program Command Sequence
Embedded
Program
algorithm in
progress
Once after the device enters the auto-select mode,
the manufacture ID code ( 4Ah ) can be accessed
by one of two ways. Just one read cycle ( with A6,
A1 and A0 = 0 ) can be used. Or four consecutive
read cycles ( with A6 = 1 and A1, A0 = 0 ) for continuation codes (7Fh) and then another last cycle
for the code (4Ah) (with A6, A1 and A0 = 0) can be
used for reading the manufacturer code.
Data Poll
from System
No
Verify Data?
Yes
No
Increment Address
Last Address?
Yes
- 4Ah (One-cycle read)
- 7Fh 7Fh 7Fh 7Fh 4Ah (Five-cycle read)
Programming
Completed
The system must write the reset command to return
to the read mode (or erase-suspend-read mode if
the device was previously in Erase Suspend).
Note: See Table 5 for program command sequence
Figure 6. Program Operation
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Program Status Bits : DQ7, DQ6 or RY/BY#
During the unlock-bypass mode, only the unlockbypass program and unlock-bypass reset commands are valid. To exit the unlock-bypass mode,
the system must issue the two-cycle unlock-bypass
reset command sequence. The first cycle must contain the data 90h. The second cycle need to only
contain the data 00h. The device then returns to the
read mode.
When the Embedded Program algorithm is complete, the device then returns to the read mode and
addresses are no longer latched. The system can
determine the status of the program operation by
using DQ7, DQ6, or RY/BY#. Refer to the Write
Operation Status section Table 6 for information on
these status bits.
- Unlock Bypass Enter Command
- Unlock Bypass Reset Command
- Unlock Bypass Program Command
Any Commands Ignored during Programming Operation
CHIP ERASE COMMAND
Any commands written to the device during the
Embedded Program algorithm are ignored. Note that
a hardware reset can immediately terminates the
program operation. The program command
sequence should be reinitiated once the device has
returned to the read mode, to ensure data integrity.
To erase the entire memory, a chip erase command
is used. This command is a six bus cycle operation.
The chip erase command sequence is initiated by
writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then
followed by the chip erase command, which in turn
invokes the Embedded Erase algorithm. The chip
erase command erases the entire memory including all other sectors except the protected sectors,
but the internal erase operation is performed on a
single sector base.
Programming from “0” back to “1”
Programming is allowed in any sequence and
across sector boundaries. But a bit cannot be programmed from “0” back to a ”1”. Attempting to do so
may cause the device to set DQ5 = 1, or cause the
DQ7 and DQ6 status bits to indicate the operation
was successful. However, a succeeding read will
show that the data is still “0”. Only erase operations
can convert a “0” to a “1”
Embedded Erase Algorithm
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the
entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any controls or timings during these operations. Table 5 shows the address and data
requirements for the chip erase command
sequence. Note that the autoselect is unavailable
while an erase operation is in progress
Unlock Bypass
In the ES29LV400 device, an unlock bypass program mode is provided for faster programming operation. In this mode, two cycles of program command
sequences can be saved. To enter this mode, an
unlock bypass enter command should be first written
to the system. The unlock bypass enter command
sequence is initiated by first writing two unlock
cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device
then enters the unlock-bypass program mode. A
two-cycle unlock bypass program command
sequence is all that is required to program in this
mode. The first cycle in this sequence contains the
unlock bypass program set-up command, A0h; the
second cycle contains the program address and
data. Additional data is programmed in the same
manner. This mode dispenses with the initial two
unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 5 shows the requirements for the
command sequence.
ES29LV400D
Erase Status Bits : DQ7, DQ6, DQ2, or RY/
BY#
When the Embedded Erase algorithm is complete,
the device returns to the read mode and addresses
are no longer latched. The system can determine
the status of the erase operation by using DQ7,
DQ6, DQ2, or RY/BY#. Refer to the Write Operation Status section Table 6 for information on these
status bits.
Commands Ignored during Erase Operation
Any command written during the chip erase operation are ignored. However, note that a hardware
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reset immediately terminates the erase operation.If
that occurs, the chip erase command sequence
should be reinitiated once the device has returned to
reading array data. to ensure data integrity. Fig. 7
illustrates the algorithm for the erase operation.
Refer to the Erase and Program Operations tables in
the AC Characteristics section for parameters, and
Fig. 21 section for timing diagrams.
to the read mode. The system must rewrite the
command sequence and any additional addresses
and commands.
Status Bits : DQ7,DQ6,DQ2, or RY/BY#
When the Sector Erase Embedded Erase algorithm
is complete, the device returns to reading array
data and addresses are no longer latched. Note
that while the Embedded Erase operation is in
progress, the system can read data from the nonerasing sector. The system can determine the status of the erase operation by reading
DQ7,DQ6,DQ2, or RY/BY# in the erasing sector.
Refer to the Write Operation Status section Table 6
for information on these status bits.
SECTOR ERASE COMMAND
By using a sector erase command, a single sector or
multiple sectors can be erased. The sector erase
command is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Table 5 shows the
address and data requirements for the sector erase
command sequence. Note that the autoselect is
unavailable while an erase operation is in progress.
Valid Command during Sector Erase
Once the sector erase operation has begun, only
the Erase Suspend command is valid. All other
commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command
Embedded Sector Erase Algorithm
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically programs and verifies the entire memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings these operations.
START
Write Erase
Command Sequence
(Notes 1,2)
Sector Erase Time-out Window and DQ3
After the command sequence is written, a sector
erase time-out of 50us occurs. During the time-out
period, additional sector addresses and sector erase
commands may be written. Loading the sector erase
buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors.
The time between these additional cycles must be
less than 50 us, otherwise the last address and command may not be accepted, and erasure may begin.
It is recommended that processor interrupts be disabled during this time to ensure all commands are
accepted. The interrupts can be re-enabled after the
last Sector Erase command is written. The system
can monitor DQ3 to determine if the sector erase
timer has timed out (See the section on DQ3:Sector
Erase Timer.). The time-out begins from the rising
edge of the final WE# pulse in the command
sequence.
Data Poll to
Erasing Bank
from System
Embedded
Erase
algorithm in
progress
No
No
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 5 for erase command sequence
2. See the section on DQ3 for information on the sector erase timer
Figure 7. Erase Operation
Any command other than Sector Erase or Erase Suspend during the time-out period resets the device
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sequence should be reinitiated once the device has
returned to reading array data, to ensure data integrity.
After an erase-suspended program operation is
complete, the device returns to the erase-suspendread mode. The system can determine the status for
the program operation using the DQ7 or DQ6 status
bits, just as in the standard Byte Program operation.
Refer to the Write Operation Status section for more
information.
Fig. 7 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations
tables in the AC Characteristics section for parameters, and Fig. 21 section for timing diagrams.
Autoselect during Erase-Suspend- Read
Mode
ERASE SUSPEND/ERASE RESUME
In the erase-suspend-read mode, the system can
also issue the autoselected command sequence.
Refer to the Autoselect Mode and Autoselect Command Sequence section for details (Table 5).
An erase operation is a long-time operation so that
two useful commands are provided in the
ES29LV400 device Erase Suspend and Erase
Resume Commands. Through the two commands,
erase operation can be suspended for a while and
the suspended operation can be resumed later when
it is required. While the erase is suspended, read or
program operations can be performed by the system.
Erase Resume Command
To resume the sector erase operation, the system
must write the Erase Resume command. Further
writes of the Resume command are ignored.
Another Erase Suspend command can be written
after the chip has resumed erasing.
Erase Suspend Command, (B0h)
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then
read data from, or program data to, any sector not
selected for erasure. This command is valid only during the sector erase operation, including the 50us
time-out period during the sector erase command
sequence. The Erase Suspend command is ignored
if written during the chip erase operation or Embedded Program algorithm. When the Erase Suspend
command is written during the sector erase operation, the device requires a maximum of 20us to suspend the erase operation. However, when the Erase
Suspend command is written during the sector erase
time-out, the device immediately terminates the timeout period and suspends the erase operation.
Read and Program during Erase-SuspendRead Mode
After the erase operation has been suspended, the
device enters the erase-suspend-read mode. The
system can read data from or program data to any
sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.)
Reading at any address within erase-suspended sectors produces status information on DQ7-DQ0. The
system can use DQ7, or DQ6 and DQ2 together, to
determine if a sector is actively erasing or is erasesuspended. Refer to the Write Operation Status section for information on these status bits (Table 6).
ES29LV400D
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COMMAND DIAGRAM
PA/PD
Done
Program
A0
20
Unlock
Bypass
AA
80
90
55
90
55
Autoselect
10
Chip
Erase
AA
F0
SA/30
Done
Read
00
SA/30
50us
Done
Resume
30
Sector
Erase
B0
Suspend
Erasesuspend
Read
Figure 8. Command Diagram
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WRITE OPERATION STATUS
Erase algorithm is complete, or if the device enters
the Erase Suspend mode, Data# polling produces a
“1” on DQ7. The system must provide an address
within any of the sectors selected for erasure to read
valid status information on DQ7.
In the ES29LV400 device, several bits are provided
to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, DQ7 and RY/BY#.
Table 6 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a
method for determining whether a program or erase
operation is complete or in progress. The device
also provides a hardware-based output signal, RY/
BY#, to determine whether an Embedded Program
or Erase operation is in progress or has been completed.
Erase on the Protected Sectors
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data#
Polling on DQ7 is active for approximately 1.8us,
then the device returns to the read mode. If not all
selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and
ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a
protected sector, the status may not be valid.
DQ7 (DATA# POLLING)
The Data# Polling bit, DQ7, indicates to the host
system whether an Embedded Program or Erase
algorithm is in progress or completed, or whether a
device is in Erase Suspend. Data# Polling is valid
after the rising edge of the final WE# pulse in the
command sequence.
Data# Polling Algorithm
Just prior to the completion of an Embedded
Program or Ease operation, DQ7 may change
asynchronously with DQ0-DQ6 while Output
Enable(OE#) is asserted low. That is, this device
may change from providing status information to
valid data on DQ7. Depending on when the system
samples the DQ7 output, it may read the status or
valid data. Even if the device has completed the
program or erase operation and DQ7 has valid data,
the data outputs on DQ0-DQ7 will appear on
successive read cycles.
During Programming
During the Embedded Program algorithm, the
device outputs on DQ7 the complement of the
datum programmed to DQ7. This DQ7 status also
applies to programming during Erase Suspend.
When the Embedded Program algorithm is complete, the device outputs the datum programmed to
DQ7. The system must provide the program
address to read valid status information on DQ7. If
a program address falls within a protected sector,
Data# Polling on DQ7 is active for approximately
250ns, then the device returns to the read mode.
Table 6 shows the outputs for Data# Polling on DQ7.
Fig. 9 shows the Data# Polling algorithm. Fig. 22 in
the AC Characteristics section shows the Data#
Polling timing diagram.
During Erase
During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded
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Erase Suspend mode. Toggle Bit I may be read at
any address, and is valid after the rising edge of the
final WE# pulse in the command sequence ( prior to
the program or erase operation), and during the sector erase time-out. During an Embedded Program or
Erase algorithm operation, successive read cycles to
any address cause DQ6 to toggle. The system may
use either OE# or CE# to control the read cycles.
When the operation is complete, DQ6 stops toggling.
START
Read DQ7-DQ0
Addr = VA
DQ7 = Data ?
Yes
No
No
DQ5 = 1 ?
The system can use DQ6 and DQ2 together to
determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in
progress), DQ6 toggles. When the device enters the
Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine
which sectors are erasing or erase-suspended.
Alternatively, the system can use DQ7(see the subsection on DQ7:Data# Polling). DQ6 also toggles
during the erase-suspend-program mode, and stops
toggling once the Embedded Program algorithm is
complete.
Yes
Read DQ7-DQ0
Addr = VA
Yes
DQ7 = Data ?
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector erase
operation, a valid address is any sector address within the
sector being erased. During chip erase, a valid address in
any non-protected sector address.
Table 6 shows the outputs for Toggle Bit I on DQ6.
Fig. 10 shows the toggle bit algorithm. Fig. 23 in the
“AC Characteristics” section shows the toggle bit
timing diagrams. Fig. 24 shows the differences
between DQ2 and DQ6 in graphical form. See also
the subsection on DQ2 : (Toggle Bit II).
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5
Figure 9. Data# Polling Algorithm
Toggling on the Protected Sectors
RY/BY# ( READY/BUSY# )
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles for approximately 1.8us, then returns to reading
array data. If not all selected sectors are protected,
the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that
are protected. If a program address falls within a
protected sector, DQ6 toggles for approximately
250ns after the program command sequence is written, then returns to reading array data.
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is
in progress or complete. The RY/BY# status is valid
after the rising edge of the final WE# pulse in the
command sequence. Since RY/BY# is an opendrain output, several RY/BY# pins can be tied
together in parallel with a pull-up resistor to Vcc. If
the output is low (Busy), the device is actively erasing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the
standby mode, or in the erase-suspend-read mode.
Table 6 shows the outputs for RY/BY#.
DQ2 ( TOGGLE BIT II )
The “Toggle Bit II” on DQ2, when used with DQ6,
indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in
progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of
the final WE# pulse in the command sequence DQ2
DQ6 ( TOGGLE BIT I )
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or
complete, or whether the device has entered the
ES29LV400D
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toggles when the system reads at addresses within
those sectors that have been selected for erasure.
(The system may use either OE# or CE# to control
the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erasesuspended. DQ6, by comparison, indicates
whether the device is actively erasing, or is in Erase
Suspend, but cannot distinguish which sectors are
selected for erasure. Thus, both status bits are
required for sector and mode information. Refer to
Table 6 to compare outputs for DQ2 and DQ6. Fig.
10 shows the toggle bit algorithm in flowchart form,
and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsection. Fig. 23 shows the toggle bit timing diagram.
Fig. 24 shows how differently DQ2 operates compared with DQ6.
START
Read DQ7-DQ0
Read DQ7-DQ0
Toggle Bit
= Toggle ?
Yes
No
DQ5 = 1 ?
Yes
Read DQ7-DQ0
Twice
Reading Toggle Bits DQ6/DQ2
Toggle Bit
= Toggle ?
Refer to Fig. 10 for the following discussion. Whenever the system initially begins reading toggle bit
status, it must read DQ7-DQ0 at least twice in a row
to determine whether a toggle bit is toggling. Typically, the system would note and store the value of
the toggle bit after the first read. After the second
read, the system would compare the new value of
the toggle bit with the first. If the toggle bit is not
toggling, the device has completed the program or
erase operation. The system can read array data
on DQ7-DQ0 on the following read cycle. However,
if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system
also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no
longer toggling, the device has successfully completed the program or erase operation. If it is still
toggling, the device did not completed the operation
successfully, and the system must write the reset
command to return to reading array data. The
remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read
cycles, determining the status as described in the
previous paragraph. Alternatively, it may choose to
perform other system tasks. In this case, this system must start at the beginning of the algorithm
when it returns to determine the status of the operation (top of Fig. 10).
ES29LV400D
No
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation
Complete
Note:
The system should recheck the toggle bit even if DQ5 = “1”
because the toggle bit may stop toggling as DQ5 changes to “1”.
See the subsections on DQ6 and DQ2 for more information.
Figure 10. Toggle Bit Algorithm
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DQ5 ( EXCEEDED TIMING LIMITS )
time-out also applies after each additional sector
erase command. When the time-out period is complete, DQ3 switches from a “0” to a”1”. If the time
between additional sector erase commands from the
system can be assumed to be less than 50us, the
system need not monitor DQ3. See also the Sector
Erase Command Sequence section. After the sector
erase command is written, the system should read
the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit
I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1”,
the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored
until the erasure operation is complete. If DQ3 is “0”,
the device will accept additional sector erase commands. To ensure the command has been accepted,
the system software should check the status of DQ3
prior to and following each subsequent sector erase
command. If DQ3 is high on the second status
check, the last command might not have been
accepted. In Table 6, DQ3 status operation is well
defined and summarized with other status bits, DQ7,
DQ6, DQ5, and DQ2.
DQ5 indicates whether the program or erase time
has exceeded a specified internal pulse count limit.
Under these conditions DQ5 produces a “1”, indicating that the program or erase cycle was not successfully completed. The device may output a “1”
on DQ5 if the system tries to program a “1” to a
location that was previously programmed to “0”
Only an erase operation can change a “0” back to a
“1”. Under this condition, the device halts the operation, and when the timing limit has been exceeded,
DQ5 produces a ”1”. Under both these conditions,
the system must write the reset command to return
to the read mode.
DQ3 ( SECTOR ERASE TIMER )
After writing a sector erase command sequence,
the system may read DQ3 to determine whether or
not erasure has begun. (The sector erase time
does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire
Table 6. Write Operation Status
DQ7
(Note 2)
Status
Standard
Mode
Erase Suspend Mode
Embedded Program Algorithm
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RY/
BY#
DQ7#
Toggle
0
N/A
No toggle
0
0
Toggle
0
1
Toggle
0
Erase Suspended
Sector
1
No toggle
0
N/A
Toggle
1
Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Embedded Erase Algorithm
Erase-SuspendRead
DQ6
Erase-Suspend-Program
Notes :
1. DQ5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the
section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
ES29LV400D
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ABSOLUTE MAXIMUM RATINGS
20ns
Storage Temperature
20ns
+0.8V
Plastic Packages ..............................................-65oC to +150oC
Vss-0.5V
Ambient Temperature
with Power Applied ...........................................-65oC to +125oC
Vss-2.0V
Voltage with Respect to Ground
20ns
Vcc (Note 1) ..........................................................-0.5V to +4.0V
A9, OE# and RESET# (Note 2) ........................-0.5V to +12.5V
All other pins (Note 1) ...................................-0.5V to Vcc + 0.5V
Negative Overshoot
Output Short Circuit Current (Note 3) ................. 200 mA
20ns
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5V. During voltage
transitions, input or I/O pins may overshoot Vss to -2.0V for periods of up to 20ns. Maximum DC voltage on input or I/O pins is
Vcc+0.5V. See Fig. 11. During voltage transition, input or I/O pins
may overshoot to Vcc+2.0V for periods up to 20ns. See Fig. 11.
20ns
Vcc+2.0V
Vcc+0.5V
2.0V
2. Minimum DC input voltage on pins A9, OE# and RESET# is -0.5V
. During voltage transitions, A9, OE# and RESET# may overshoot
Vss to -2.0V for periods of up to 20ns. See Fig. 11. Maximum DC
input voltage on pin A9 is +12.5V which may overshoot to +14.0V
for periods up to 20ns.
20ns
Positive Overshoot
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
Stresses above those listed under “Absolute Maximum Ratings” may
cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above those indicated in the operational sections of this datasheet is
not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
Figure 11. Maximum Overshoot Waveform
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA).................................-40oC to +85oC
Commercial Devices
Ambient Temperature (TA)....................................0oC to +70oC
Vcc Supply Voltages
Vcc for all devices ............................................2.7V to 3.6V
Vcc for regulated voltage range .....................3.0V to 3.6V
Operating ranges define those limits between which the functionality of the device is guaranteed.
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DC CHARACTERISTICS
Table 7. CMOS Compatible
Parameter
Symbol
Parameter Description
ILI
Input Load Current
ILIT
A9 Input Load Current
ILR
RESET# Input Load Current
ILO
Output Leakage Current
ICCI
Vcc Active Read Current
(Notes 1,2)
Test Conditions
Min
Typ
Max
Unit
+ 1.0
uA
Vcc=Vcc max; A9=12.5V
35
uA
Vcc=Vcc max; RESET#=12.5V
35
uA
+ 1.0
uA
VIN=Vss to Vcc
Vcc=Vcc max
Vout=Vss to Vcc,
Vcc=Vcc max
5MHz
7
12
1MHz
2
4
5MHz
7
12
1MHz
2
4
CE#=VIL, OE#=VIH, WE#=VIL
15
30
mA
CE#, RESET#= Vcc+0.3V
0.2
10
uA
RESET#=Vss + 0.3V
0.2
10
uA
VIH = Vcc + 0.3V
VIL = Vss + 0.3V
0.2
10
uA
CE#=VIL OE#=VIH, Byte
mode
mA
CE#=VIL, OE#=VIH, Word
mode
ICC2
Vcc Active Write Current (Note 2,3)
ICC3
Vcc Standby Current (Note 2)
ICC4
Vcc Reset Current (Note 2)
ICC5
Automatic Sleep Mode
(Notes2,4)
VIL
Input Low Voltage
-0.5
0.5
V
VIH
Input High Voltage
0.7xVcc
Vcc+0.3
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
11.5
12.5
V
VOL
Output Low Voltage
0.45
V
VOH1
Vcc = 3.0V + 10%
IOL = 4.0 mA, Vcc = Vcc min
IOH = -2.0mA, Vcc = Vcc min
0.85 Vcc
IOH = -100 uA, Vcc = Vcc min
Vcc - 0.4
V
Output High Voltage
VOH2
VLKO
Low Vcc Lock-Out Voltage (Note 5)
2.3
2.5
V
Notes:
1. The Icc current listed is typically less than 2 mA/MHz, with OE# at VIH , Typical condition : 25oC, Vcc = 3V
2. Maximum ICC specifications are tested with Vcc = Vcc max.
3. Icc active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
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DC CHARACTERISTICS
Zero-Power Flash
Supply Current in mA
15
Icc1 (Active Read current)
Icc5 (Automatic Sleep Mode)
10
5
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 12. Icc1 Current vs. Time (Showing Active and Automatic Sleep Currents)
12
3.6V
10
2.7V
Supply Current in mA
8
6
4
2
0
1
Note: T = 25oC
2
3
4
5
Frequency in MHz
Figure 13. Typical Icc1 vs. Frequency
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3.3V
Table 8. Test Specifications
2.7kΩ
Device
Under
Test
Test Condition
70R
Output Load
CL
1TTL gate
Output Load Capacitance, CL (including jig
capacitance)
6.2kΩ
30 pF
Input Rise and Fall Times
100 pF
5 ns
Input Pulse Levels
Figure 14. Test Setup
90, 120
0.0 - 3.0 V
Input timing measurement reference levels
1.5 V
Output timing measurement reference levels
1.5 V
Note: Diodes are IN3064 or equivalent
Key To Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0V
Input
1.5V
Measurement Level
1.5V Output
0.0V
Figure 15. Input Waveforms and Measurement Levels
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AC CHARACTERISTICS
Table 9. Read-Only Operations
Parameter
Speed Options
Description
JEDEC Std.
tAVAV
tRC
Read Cycle Time(Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
tEHQZ
Test Setup
70R
90
Unit
120
Min
70
90
120
ns
CE#,OE#=VIL
Max
70
90
120
ns
OE#=VIL
Max
70
90
120
ns
Output Enable to Output Delay
Max
30
35
50
ns
tDF
Chip Enable to Output High Z (Note 1)
Max
16
ns
tGHQZ
tDF
Output Enable to Output High Z (Note 1)
Max
16
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
tOEH
Output Enable Hold
Time (Note 1)
Read
Min
0
ns
Toggle and Data# Polling
Min
10
ns
Note : 1. Not 100% tested
tRC
Address
Address Stable
tACC
CE#
tRH
tDF
tRH
tOE
OE#
tOEH
WE#
tCE
tOH
High-Z
High-Z
OUTPUTS
Output Valid
RESET#
RY/BY#
0V
Figure 16. Read Operation Timings
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AC CHARACTERISTICS
Table 10. Hardware Reset ( RESET #)
Parameter
Description
JEDEC Std.
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms) to Read Mode
(See Note)
Max
20
us
tReady
RESET# Pin Low (Not During Embedded Algorithms) to Read
Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
RESET High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
us
tRB
RY/BY# Recovery Time
Min
0
ns
Note : Not 100% tested
RY/BY#
0V
CE#,OE#
tRH
RESET#
tRP
tREADY
(A) Not During Embedded Algorithm
tREADY
RY/BY#
tRB
CE#,OE#
RESET#
tRP
(B) During Embedded Algorithm
Figure 17. Reset Timings
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AC CHARACTERISTICS
Table 11. Word/Byte Configuration (BYTE#)
Parameter
JEDEC
Description
Std.
70R
90
120
Unit
tELFL/tELFH
CE# to BYTE# Switching Low or High
Max
5
ns
tFLQZ
BYTE# Switching Low to Output HIGH Z
Max
16
ns
tFHQV
BYTE# Switching High to Output Active
Min
70
90
120
ns
CE#
OE#
BYTE#
tELFL
BYTE# Switching
Switching from
word to byte mode
Data Output
(DQ0-DQ14)
DQ0-DQ14
DQ15
Output
DQ15/A-1
Data Output
(DQ0-DQ7)
Address Input
tFLQZ
tELFH
BYTE#
BYTE# Switching
Switching from
byte to word mode
Data Output
(DQ0-DQ7)
DQ0-DQ14
DQ15/A-1
Address Input
Data Output
(DQ0-DQ14)
DQ15
Output
tFHQV
Figure 18. BYTE# Timing for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS)
tHOLD
(tAH)
Note : Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 19. BYTE# Timing for Write Operations
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AC CHARACTERISTICS
Table 12. Erase and Program Operations
Parameter
Description
70R
90
120
Unit
70
90
120
ns
JEDEC
Std.
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tAH
Address Hold Time
Min
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
tDVWH
tDS
Data Setup Time
Min
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
Byte
Typ
6
tWHWH1
tWHWH1
Programming Operation (Note 2)
Word
Typ
8
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
tVCS
Vcc Setup Time (Note 1)
Min
50
us
tRB
Write Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Max
90
ns
tWLAX
45
50
0
35
45
ns
50
35
ns
50
ns
ns
us
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
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AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tWC
tAS
555h
Address
Read Status Data(last two cycles)
PA
PA
PA
tAH
CE#
tCH
OE#
tCS tWP
tWHWH1
WE#
tWPH
tDS tDH
A0h
DATA
PD
Status
tBUSY
RY/BY#
Dout
tRB
tVCS
Vcc
NOTES :
1. PA = program address, PD = program data, Dout is the true data at the program address.
2. Illustration shows device in word mode.
Figure 20. Program Operation Timings
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AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tWC
Address
tAS
2AAh
Read Status Data
tAH
VA
SA
VA
555h for chip erase
CE#
tCH
OE#
tCS tWP
tWHWH2
WE#
tWPH
tDS tDH
10h for chip erase
55h
DATA
30h
In
Progress
tBUSY
RY/BY#
Complete
tRB
tVCS
Vcc
NOTES :
1. SA = sector address(for Sector Erase), VA = valid address for reading status data(see “Write Operation Status”).
2. These waveforms are for the word mode.
Figure 21. Chip/Sector Erase Operation Timings
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AC CHARACTERISTICS
tRC
Address
VA
VA
tACC
VA
tCE
CE#
tCH
tOE
OE#
tOEH
WE#
tDF
tOH
HIGH-Z
DQ7
Complement
Complement
DQ0-DQ6
Status Data
Status Data
True
Valid Data
HIGH-Z
True
Valid Data
tBUSY
RY/BY#
NOTE : VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle
Figure 22. Data# Polling Timings (During Embedded Algorithms)
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AC CHARACTERISTICS
tAHT
tAS
Address
tASO
tAHT
CE#
tOEH
tCEPH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
Valid Data
tOE
Valid Status
Valid Status
(first read)
(second read)
Valid Status
Valid Data
(stops toggling)
RY/BY#
NOTE : VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 23. Toggle Bit Timings (During Embedded Algorithms)
Enter
Embedded
Erasing
Enter Erase
Suspend
Program
Enter
Suspend
Erase
Resume
WE#
Erase
Erase
Suspend
Read
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
NOTE : DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 24. DQ2 vs. DQ6
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AC CHARACTERISTICS
Table 13. Temporary Sector Unprotect
Parameter
JEDEC
Description
Std.
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector Unprotect
Min
4
us
tRRB
RESET# Hold Time from RY/BY# High for Temporary Sector Unprotect
Min
4
us
Note: Not 100% tested.
VID
RESET#
Vss,VIL,
or VIH
tVIDR
Program or Erase Command Sequence
tVIDR
CE#
WE#
tRRB
tRSP
RY/BY#
Figure 25. Temporary Sector Unprotect Timing Diagram
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AC CHARACTERISTICS
VID
VIH
RESET#
SA,A6,
A1,A0
Valid*
Valid*
Verify
Sector Protect or Unprotect
DQ
60h
1us
Valid*
60h
40h
Status
Sector Protect : 150us,
Sector Unprotect: 15ms
CE#
WE#
OE#
* For sector protect, A6=0,A1=1,A0=0 For sector unprotect, A6=1,A1=1,A0=0
Figure 26. Sector Protect & Unprotect Timing Diagram
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AC CHARACTERISTICS
Table 14. Alternate CE# Controlled Erase and Program Operations
Parameter
Description
70R
90
120
Unit
70
90
120
ns
JEDEC
Std.
tAVAV
tWC
Write Cycle Time( Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
tDVEH
tDS
Data Setup Time
Min
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
tELEL
tCPH
CE# Pulse Width High
Min
30
Byte
Typ
6
tWHWH1
tWHWH1
Programming Operation (Note 2)
Word
Typ
8
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
0
45
35
45
35
ns
50
ns
50
ns
50
ns
ns
us
sec
Notes :
1. Not 100% tested
2. See the “Erase And Programming Performance” section for more information.
ES29LV400D
39
Rev.1C January 5, 2006
EE SS II
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AC CHARACTERISTICS
555 for program
2AA for erase
PD for program
SA for sector erase
555 for chip erase
Data Polling
Address
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tDS
tCPH
tBUSY
tDH
DATA
DQ7#
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
NOTES :
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data
3. DQ7# is the complement of the data written to the device. Dout is the data written to the device.
4. Waveforms are for the word mode.
Figure 27. Alternate CE# Controlled
Write(Erase/Program) Operation Timings
ES29LV400D
40
Rev.1C January 5, 2006
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Table 15. AC CHARACTERISTICS
Parameter
Description
tOE
Value
Unit
Output Enable to Output Delay
Max
30/35/50
ns
tVIDR
Voltage Transition Time
Min
500
ns
tWPP1
Write Pulse Width for Protection Operation
Min
150
us
tWPP2
Write Pulse Width for Unprotection Operation
Min
15
ms
tOESP
OE# Setup Time to WE# Active
Min
4
us
tVLHT
Voltage transistion time
Min
1
us
tCSP
CE# Setup Time to WE# Active
Min
4
us
Voltage Setup Time
Min
4
us
tST
A<17:12>
SAy
SAx
A<0>
A<1>
A<6>
tVIDR
VID
A<9>
tVIDR
tST
VID
OE#
tOESP
tWPP1
ttVLHT
WE#
tST
tCSP
tOE
CE#
DQ
0x01
RESET#
Vcc
Figure 28. Sector Protection timings (A9 High-Voltage Method)
ES29LV400D
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Rev.1C January 5, 2006
EE SS II
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AC CHARACTERISTICS
A<17:12>
SA1
SA0
A<0>
A<1>
A<6>
tVIDR
VID
A<9>
tVIDR
tST
VID
OE#
tOESP
tWPP2
WE#
tST
tOE
tCSP
CE#
DQ
0x00
RESET#
Vcc
NOTE : It is recommended to verify for all sectors.
Figure 29. Sector Unprotection timings (A9 High-Voltage Method)
ES29LV400D
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Rev.1C January 5, 2006
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Table 16. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Sector Erase Time
Max (Note 2)
0.7
10
Unit
sec
Chip Erase Time
8
Byte Program Time
6
150
us
Word Program Time
8
210
us
Byte Mode
3.1
9.3
Word Mode
2.1
6.3
Chip Program Time (Note 3)
sec
Comments
Excludes 00h programming prior to
erasure (Note 4)
Exclude system level overhead (Note 5)
sec
Notes:
1. Typical program and erase times assume the following conditions: 25oC, 3.0V Vcc, 10,000 cycles. Additionally, programming
typicals assume checkerboard pattern.
2. Under worst case conditions of 90oC, Vcc = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two-or-four-bus-cycle sequence for the program command. See
Table 5 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles.
Table 17. LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to Vss on all pins except I/O pins (including A9, OE#, and RESET#)
- 1.0V
12.5 V
Input voltage with respect to Vss on all I/O pins
- 1.0V
Vcc + 1.0 V
Vcc Current
- 100 mA
+100 mA
Note: Includes all pins except Vcc. Test conditions: Vcc = 3.0 V, one pin at a time
Table 18. TSOP, SO, AND BGA PACKAGE CAPACITANCE
Parameter Symbol
Parameter Description
Test Setup
CIN
Input Capacitance
VIN = 0
COUT
Output Capacitance
VOUT = 0
CIN2
Control Pin Capacitance
VIN = 0
Typ
Max
Unit
TSOP
6
7.5
pF
FBGA
4.2
5.0
pF
TSOP
8.5
12
pF
FBGA
5.4
6.5
pF
TSOP
7.5
9
pF
FBGA
3.9
4.7
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25oC, f=1.0MHz.
Table 19. DATA RETENTION
Parameter Description
Test conditions
Min
Unit
150oC
10
Years
125oC
20
Years
Minimum Pattern Data Retention Time
ES29LV400D
43
Rev.1C January 5, 2006
EE SS II
Excel Semiconductor inc.
PHYSICAL DIMENSIONS
48-Pin Standard TSOP (measured in millimeters)
0.10 C
2
A2
1
N
SEE DETAIL B
-B-
-AE 5
e
9
N
---- + 1
N
----
2
2
5
4
D1
D
A1
-CSEATING
PLANE
B
0.08MM (0.0031”) M C A-B S
A
b
6 7
WITH
PLATING
B
SEE DETAIL A
7
(c)
c1
BASE
METAL
b1
R
c
SECTION B-B
GAUGE
PLANE
0.25MM
(0.0098”) BSC
θ°
PARALLEL TO
SEATING PLANE
L
e/2
-X-
DETAIL A
X = A OR B
DETAIL B
Package
TS 48
JEDEC
MO-142 (B) DD
NOTES:
Symbol
MIN
NOM
MAX
A
-
-
1.20
A1
0.05
-
0.15
A2
0.95
1.00
1.05
b1
0.17
0.20
0.23
b
0.17
0.22
0.27
c1
0.10
-
0.16
c
0.10
-
0.21
D
19.80
20.00
20.20
D1
18.30
18.40
18.50
E
11.90
12.00
12.10
e
L
0.50 BASIC
0.50
θ
R
1. Controlling dimensions are in millimeters(mm). (Dimensioning
and tolerancing conforms to ANSI Y14.5M-1982)
2. Pin 1 identifier for standard pin out (Die up).
3. Pin 1 identifier for reverse pin out (Die down): Ink or Laser mark
4. To be determined at the seating plane. The seating plane is defined as the plane of contact that is made when the package leads are allowed to rest freely on a flat horizontal surface.
5. Dimension D1 and E do not include mold protrusion. Allowable
mold protrusion is 0.15mm (0.0059”) per side.
6. Dimension b does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm (0.0031”) total in excess
of b dimension at max. material condition. Minimum space
between protrusion and an adjacent lead to be 0.07mm
(0.0028”).
7. These dimensions apply to the flat section of the lead between
0.10mm (0.0039”) and 0.25mm (0.0098”) from the lead tip.
8. Lead coplanarity shall be within 0.10mm (0.004”) as measured
from the seating plane.
9. Dimension “e” is measured at the centerline of the leads.
0.60
0°
0.08
N
ES29LV400D
3°
-
0.70
5°
0.20
48
44
Rev.1C January 5, 2006
EE SS II
Excel Semiconductor inc.
PHYSICAL DIMENSIONS
48-Ball FBGA (6 x 8 mm)
0.20
(4x)
D1
A
D
H
G F
E
D
C
B
A
6
7
5
e
SE
4
E
E1
3
2
1
6
b
B
A1 CORNER INDEX MARK 11
SD
7
PIN 1 ID.
0.15 M Z A B
0.08 M Z
10
// 0.25 Z
A2
A
0.08 Z
Z
A1
PACKAGE
NOTES:
xFBD 048
JEDEC
1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. All dimensions are in millimeters.
3. Ball position designation per JESD 95-1, SPP-010.
4. e represents the solder ball grid pitch.
5. Symbol “MD” is the ball row matrix size in the “D” direction.
Symbol “ME” is the ball column matrix size in the “E” direction. N is the maximum number of solder balls for matrix size MD X ME.
6. Dimension “b” is measured at the maximum ball diameter
in a plane parallel to datum Z.
7. SD and SE are measured with respect to datums A and B
and define the position of the center solder ball in the outer row. When there is an odd number of solder balls in the
outer row parallel to the D or E dimension, respectively, SD
or SE = 0.000 when there is an even number of solder balls
in the outer row, SD or SE = e/2
8. “X” in the package variations denotes part is outer qualification.
9. “+” in the package drawing indicate the theoretical center
of depopulated balls.
10. For package thickness A is the controlling dimension.
11. A1 corner to be indentified by chamfer, ink mark, metallized markings indention or other means.
N/A
6.00 mm x 8.00 mm PACKAGE
SYMBOL
MIN
NOM
A
MAX
NOTE
1.10
OVERALL THICK
NESS
BALL HEIGHT
A1
0.21
0.25
0.29
A2
0.7
0.76
0.82
BODY THICKNESS
D
8.00 BSC
BODY SIZE
E
6.00 BSC
BODY SIZE
D1
5.60 BSC
BALL FOOTPRINT
E1
4.00 BSC
MD
8
ROW MATRIX SIZED
DIRECTION
ME
6
ROW MATRIX SIZED
DIRECTION
N
b
48
0.30
0.35
0.40
BALL FOOTPRINT
TOTAL BALL COUNT
BALL DIAMETER
e
0.80 BSC
BALL PITCH
SD / SE
0.40 BSC
SOLDER BALL
PLACEMENT
ES29LV400D
45
Rev.1C January 5, 2006
EE SS II
Excel Semiconductor inc.
ORDERNG INFORMATION
Standard Products
ESI standard products are available in several package and operating ranges. The order number (Valid Combination) is formed by a combination of the following:
ES
29
LV
160 X
X - XX
X
X
X
X
TEMPERATURE RANGE
Blank : Commercial (0oC to + 70oC)
I
:
Industrial (- 40oC to + 85oC)
Pb-free
C
G
:
:
Pb product
Pb-free product
PACKAGE TYPE
T : Standard TSOP (48-pin), W : FBGA(48-ball)
VOLTAGE RANGE
Blank : 2.7 ~ 3.6V
R
: 3.0 ~ 3.6V
SPEED OPTION
70R : 70ns
80 : 80ns
90 : 90ns
12 : 120ns
SECTOR ARCHITECTURE
Blank : Uniform sector
T
: Top sector
B
: Bottom sector
TECHNOLOGY
D : 0.18um
E : 0.15um
F : 0.13um
DENSITY & ORGANIZATION
400 : 4M ( x8 / x16)
160 : 16M ( x8 / x16)
640 : 64M ( x8 / x16)
800 : 8M ( x8 / x16)
320 : 32M ( x8 / x16)
POWER SUPPLY AND INTERFACE
F
: 5.0V
LV : 3.0V
DL
: 3.0V, Dual Bank
DS : 1.8V, Dual Bank
BDS : 1.8V, Burst mode, Dual Bank
COMPONENT GROUP
29 : Flash Memory
EXCEL SEMICONDUCTOR
ES29LV400D
46
Rev.1C January 5, 2006
EE SS II
Excel Semiconductor inc.
Product Selection Guide
Industrial Device
Part No.
Speed Vcc
Boot Sector Package
Pb
ES29LV400DT-70RTGI
70ns
3.0 - 3.6V
Top
48-pin TSOP
Pb-free
ES29LV400DT-70RTCI
70ns
3.0 - 3.6V
Top
48-pin TSOP
-
ES29LV400DB-70RTGI
70ns
3.0 - 3.6V
Bottom
48-pin TSOP
Pb-free
ES29LV400DB-70RTCI
70ns
3.0 - 3.6V
Bottom
48-pin TSOP
-
ES29LV400DT-90TGI
90ns
2.7 - 3.6V
Top
48-pin TSOP
Pb-free
ES29LV400DT-90TCI
90ns
2.7 - 3.6V
Top
48-pin TSOP
-
ES29LV400DB-90TGI
90ns
2.7 - 3.6V
Bottom
48-pin TSOP
Pb-free
ES29LV400DB-90TCI
90ns
2.7 - 3.6V
Bottom
48-pin TSOP
-
ES29LV400DT-12TGI
120ns
2.7 - 3.6V
Top
48-pin TSOP
Pb-free
ES29LV400DT-12TCI
120ns
2.7 - 3.6V
Top
48-pin TSOP
-
ES29LV400DB-12TGI
120ns
2.7 - 3.6V
Bottom
48-pin TSOP
Pb-free
ES29LV400DB-12TCI
120ns
2.7 - 3.6V
Bottom
48-pin TSOP
-
ES29LV400D
47
Ball Pitch/Size
Body Size
Rev.1C January 5, 2006
EE SS II
Excel Semiconductor inc.
Product Selection Guide
Industrial Device
Part No.
Speed Vcc
Boot Sector Package
Pb
Ball Pitch/Size
Body Size
ES29LV400DT-70RWGI
70ns
3.0 - 3.6V
Top
48-Ball FBGA
Pb-free
0.8mm/0.3mm
6mm x 8mm
ES29LV400DT-70RWCI
70ns
3.0 - 3.6V
Top
48-Ball FBGA
-
0.8mm/0.3mm
6mm x 8mm
ES29LV400DB-70RWGI
70ns
3.0 - 3.6V
Bottom
48-Ball FBGA
Pb-free
0.8mm/0.3mm
6mm x 8mm
ES29LV400DB-70RWCI
70ns
3.0 - 3.6V
Bottom
48-Ball FBGA
-
0.8mm/0.3mm
6mm x 8mm
ES29LV400DT-90WGI
90ns
2.7 - 3.6V
Top
48-Ball FBGA
Pb-free
0.8mm/0.3mm
6mm x 8mm
ES29LV400DT-90WCI
90ns
2.7 - 3.6V
Top
48-Ball FBGA
-
0.8mm/0.3mm
6mm x 8mm
ES29LV400DB-90WGI
90ns
2.7 - 3.6V
Bottom
48-Ball FBGA
Pb-free
0.8mm/0.3mm
6mm x 8mm
ES29LV400DB-90WCI
90ns
2.7 - 3.6V
Bottom
48-Ball FBGA
-
0.8mm/0.3mm
6mm x 8mm
ES29LV400DT-12WGI
120ns
2.7 - 3.6V
Top
48-Ball FBGA
Pb-free
0.8mm/0.3mm
6mm x 8mm
ES29LV400DT-12WCI
120ns
2.7 - 3.6V
Top
48-Ball FBGA
-
0.8mm/0.3mm
6mm x 8mm
ES29LV400DB-12WGI
120ns
2.7 - 3.6V
Bottom
48-Ball FBGA
Pb-free
0.8mm/0.3mm
6mm x 8mm
ES29LV400DB-12WCI
120ns
2.7 - 3.6V
Bottom
48-Ball FBGA
-
0.8mm/0.3mm
6mm x 8mm
ES29LV400D
48
Rev.1C January 5, 2006
EE SS II
Excel Semiconductor inc.
Product Selection Guide
Commercial Device
Part No.
Speed Vcc
Boot Sector Package
Pb
ES29LV400DT-70RTG
70ns
3.0 - 3.6V
Top
48-pin TSOP
Pb-free
ES29LV400DT-70RTC
70ns
3.0 - 3.6V
Top
48-pin TSOP
-
ES29LV400DB-70RTG
70ns
3.0 - 3.6V
Bottom
48-pin TSOP
Pb-free
ES29LV400DB-70RTC
70ns
3.0 - 3.6V
Bottom
48-pin TSOP
-
ES29LV400DT-90TG
90ns
2.7 - 3.6V
Top
48-pin TSOP
Pb-free
ES29LV400DT-90TC
90ns
2.7 - 3.6V
Top
48-pin TSOP
-
ES29LV400DB-90TG
90ns
2.7 - 3.6V
Bottom
48-pin TSOP
Pb-free
ES29LV400DB-90TC
90ns
2.7 - 3.6V
Bottom
48-pin TSOP
-
ES29LV400DT-12TG
120ns
2.7 - 3.6V
Top
48-pin TSOP
Pb-free
ES29LV400DT-12TC
120ns
2.7 - 3.6V
Top
48-pin TSOP
-
ES29LV400DB-12TG
120ns
2.7 - 3.6V
Bottom
48-pin TSOP
Pb-free
ES29LV400DB-12TC
120ns
2.7 - 3.6V
Bottom
48-pin TSOP
-
ES29LV400D
49
Ball Pitch/Size
Body Size
Rev.1C January 5, 2006
EE SS II
Excel Semiconductor inc.
Product Selection Guide
Commercial Device
Part No.
Speed Vcc
Boot Sector Package
Pb
Ball Pitch/Size
Body Size
ES29LV400DT-70RWG
70ns
3.0 - 3.6V
Top
48-Ball FBGA
Pb-free
0.8mm/0.3mm
6mm x 8mm
ES29LV400DT-70RWC
70ns
3.0 - 3.6V
Top
48-Ball FBGA
-
0.8mm/0.3mm
6mm x 8mm
ES29LV400DB-70RWG
70ns
3.0 - 3.6V
Bottom
48-Ball FBGA
Pb-free
0.8mm/0.3mm
6mm x 8mm
ES29LV400DB-70RWC
70ns
3.0 - 3.6V
Bottom
48-Ball FBGA
-
0.8mm/0.3mm
6mm x 8mm
ES29LV400DT-90WG
90ns
2.7 - 3.6V
Top
48-Ball FBGA
Pb-free
0.8mm/0.3mm
6mm x 8mm
ES29LV400DT-90WC
90ns
2.7 - 3.6V
Top
48-Ball FBGA
-
0.8mm/0.3mm
6mm x 8mm
ES29LV400DB-90WG
90ns
2.7 - 3.6V
Bottom
48-Ball FBGA
Pb-free
0.8mm/0.3mm
6mm x 8mm
ES29LV400DB-90WC
90ns
2.7 - 3.6V
Bottom
48-Ball FBGA
-
0.8mm/0.3mm
6mm x 8mm
ES29LV400DT-12WG
120ns
2.7 - 3.6V
Top
48-Ball FBGA
Pb-free
0.8mm/0.3mm
6mm x 8mm
ES29LV400DT-12WC
120ns
2.7 - 3.6V
Top
48-Ball FBGA
-
0.8mm/0.3mm
6mm x 8mm
ES29LV400DB-12WG
120ns
2.7 - 3.6V
Bottom
48-Ball FBGA
Pb-free
0.8mm/0.3mm
6mm x 8mm
ES29LV400DB-12WC
120ns
2.7 - 3.6V
Bottom
48-Ball FBGA
-
0.8mm/0.3mm
6mm x 8mm
ES29LV400D
50
Rev.1C January 5, 2006
EE SS II
Excel Semiconductor inc.
Document Title
4M Flash Memory
Revision History
Revision Number
Rev. 0A
Data
Mar. 15, 2004
Items
Initial Release Version.
1. The bias condtion of RESET# in Table 1 for A9 high-Voltage
method is changed from VID to H.
2. The bias condition of A9 in Table 1 for A9 high-Voltage method
Rev. 0B
Apr. 23, 2004
is added.
3. The typical byte and word program time are changed from
5us/7us to 6us/8us.
4. The dimension of FBGA is changed from 8 x 9mm to 6 x 8mm.
1. The 60R is removed.
2. The 44pin-SO is removed.
3. The Icc3 (max) is changed from 5uA to 10uA.
4. The Icc4 (max) is changed from 5uA to 10uA.
5. The Icc5 (max) is changed from 5uA to 10uA.
Rev. 0C
Dec. 1, 2004
6. The VIL(max) is changed from 0.8V to 0.5V.
7. The overall thickness of FBGA , A (max), is changed from 1.20
to 1.10. Therefore, ball height (A1) and body thickness (A2)
also is changed accordingly.
8. The ball diameter of FBGA, b(min), b(nom), b(max), is
changed from 0.25, 0.30, and 0.35 to 0.30, 0.35, and 0.40
respectively.
1. The arrow from Erase Suspend Read to Read is changed to
Rev. 0D
Dec. 13, 2004
Sector Erase.
2. VLKO(min), 2.3V is added
ES29LV400D
51
Rev.1C January 5, 2006
EE SS II
Excel Semiconductor inc.
Document Title
4M Flash Memory
Revision History
Revision Number
Rev. 1A
Data
Apr. 1, 2005
Items
1. The preliminary is removed from the datasheet.
2. Changed Speed (70 --> 70R).
Rev. 1B
Sep. 30, 2005
1. add tVLHT parameter (page 41)
2. Correct tOE speed. (page 3)
Rev. 1C
Jan. 5, 2006
1. Add RoHS-Compliant Package Option.
Excel Semiconductor Inc.
1010 Keumkang Hightech Valley, Sangdaewon1-Dong 133-1, Jungwon-Gu, Seongnam-Si, Kyongki-Do, Rep.
of Korea. Zip Code : 462-807 Tel : +82-31-777-5060 Fax : +82-31-740-3798 / Homepage : www.excelsemi.com
The attached datasheets are provided by Excel Semiconductor.inc (ESI). ESI reserves the right to change the specifications and products. ESI will answer to your questions about device. If you have any questions, please contact the
ESI office.
ES29LV400D
52
Rev.1C January 5, 2006