ASI ASI10493 Npn silicon rf power transistor Datasheet

BLV33F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV33F is Designed for
Operation in Band III TV Transposers
and Transmitter Amplifiers from
170 to 230 MHz.
FEATURES:
PACKAGE STYLE .500 6L FLG
• Gold Metalization
• Internal Input Matching
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
10 A
VCB
60 V
VCE
35 V
PDISS
140 W @ TC = 25 C
TJ
-65 C to +200 C
TSTG
-65 C to +150 C
θJC
1.5 C/W
O
O
O
O
O
O
CHARACTERISTICS
ORDER CODE: ASI10493
O
TC = 25 C
NONETEST CONDITIONS
SYMBOL
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
BVEBO
IE = 10 mA
ICES
VE = 28 V
hFE
VCE = 5.0 V
Cob
VCB = 28 V
GPE
VCE = 25 V
PREF = 16 W
IMD3
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
RBE = 10 Ω
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
V
60
V
4.0
V
10
f = 1.0 MHz
ICQ = 3.2 A
Vision = -8 dB
Side Band = -16 dB
f = 225 MHz
Snd. = -7 dB
UNITS
13.5
mA
100
---
80
pF
dB
14.5
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
5
-55
dBc
REV. A
1/1
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