AMMP-6232 18 to 32 GHz GaAs High Linearity LNA in SMT Package Data Sheet Description Features Avago’s AMMP-6232 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier in a surface mount package. The wide band and unconditionally stable performance makes this MMIC ideal as a primary or sub-sequential low noise block or a transmitter driver. The MMIC has 4 gain stages and requires a 4V, 138mA power supply for optimal performance. Since this MMIC covers several bands, it can reduce part inventory and increase volume purchase options The MMIC is fabricated using PHEMT technology. The surface mount package eliminates the need of “chip & wire” assembly for lower cost. This MMIC is fully SMT compatible with backside grounding and I/Os. • Surface Mount Package, 5.0 x 5.0 x 1.25 mm • Unconditionally Stable • 50W Input and Output Match Package Diagram RF IN NC Vdd NC 1 2 3 8 4 RF OUT Specifications (Vdd = 4.0V, Idd = 138mA) • • • • RF Frequencies: 18 - 32 GHz High Output IP3: 29dBm High Small-Signal Gain: 23dB Typical Noise Figure: 3dB Applications • • • • Microwave Radio systems Satellite VSAT, DBS Up/Down Link LMDS & Pt-Pt mmW Long Haul Broadband Wireless Access (including 802.16 and 802.20 WiMax) • WLL and MMDS loops Functional Block Diagram 1 7 6 5 NC Vg NC Note: 1. This MMIC uses depletion mode pHEMT devices. 2. Negative voltage is used for the gate bias 2 3 100pF 4 8 100pF 7 6 5 Pin 1 2 3 4 5 6 7 8 Function Vdd RFout Vg RFin Top view Package base: GND Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) =60V ESD Human Body Model (Class 1A) = 250V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Note: MSL Rating = Level 2A Electrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C. 2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6220 published specifications. 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt) matching. 5. All tested parameters guaranteed with measurement accuracy +/-1.5 dB for gain and +/-0.4dB for NF Table 1. RF Electrical Characteristics TA=25°C, Vdd=4.0V, Idd=135mA, Zo=50 Ω Parameter Min Typ. Small Signal Gain, Gain 19 23 Max 4.5 Unit Comment dB Test Frequency = 20, 26, 29 GHz dB Test Frequency = 20, 26, 29 GHz Noise Figure into 50 Ω, NF 3 Output Power at 1 dB Gain Compression, P-1dB 18 dBm Output Power at 3 dB Gain Compression, Psat 20 dBm Output Third Order Intercept Point, OIP3 29 dBm Isolation, Iso -45 dB Input Return Loss, RLin -10 dB Output Return Loss, RLout -10 dB Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25°C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data. Description Min. Drain Supply Current, Idd Drain Supply Voltage, Vd 3 Gate Bias Current, Ig Gate Bias Voltage, Vg 2 Typical Max. Unit Comments 135 150 mA Vd = 4.5 V, Under any RF power drive and temperature 4 5 V 0.1 -1.1 -0.95 mA -0.8 V Table 3. Thermal Properties Parameter Test Conditions Value Thermal Resistance, qjc Channel-to-backside Thermal Resistance Tchannel(Tc)=34°C Thermal Resistance at backside temperature Tb=25°C qch-b = 35.1 °C/W Absolute Minimum and Maximum Ratings Table 4. Minimum and Maximum Ratings Description Pin Max. Unit Drain to Ground Supply Voltage Vdd Min. 5.5 V Gate-Drain Voltage Vgd -8 V Drain Current Idd 200 mA Gate Bias Voltage Vg +0.8 V Gate Bias Current Ig 1 mA RF CW Input Power Pin 10 dBm +150 °C +150 °C +260 °C Channel Temperature Storage Temperature Maximum Assembly Temperature -65 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 3 Comments 20 second maximum AMMP-6232 Typical Performance [1, 2] 40 5 30 4 Noise Figure (dB) S21 (dB) (TA = 25°C, Vdd=4V, Idd=138mA, Zin = Zout = 50 W unless noted) 20 10 0 3 2 1 0 15 20 25 30 35 18 20 22 Frequency (GHz) 28 30 32 Figure 2. Noise Figure 0 20 -5 15 -1 0 OP1dB (dBm) S11 (dB) 26 Frequency (GHz) Figure 1. Small-signal Gain -1 5 -2 0 -2 5 15 20 25 30 10 5 0 35 18 Frequency (GHz) Figure 3. Input Return Loss 20 22 24 26 Frequency (GHz) 28 30 32 28 30 32 Figure 4. Output P-1dB 0 30 -5 25 -10 20 OIP3 (dBm) S22 (dB) 24 -15 -20 15 10 5 -25 15 20 25 30 35 18 20 Frequency (GHz) Figure 5. Output Return Loss 22 24 26 Frequency (GHz) Figure 6. Output IP3 Note: 1. S-parameters are measured on R&D Eval Board as shown in Figure 20. Effects of connectors and board traces are included in results. 2. Noise Figure is measured on R&D Eval Board as shown in Figure 20, and with a 3dB pad at the input. Board and Connector losses are already deembeded from the data. 4 AMMP-6232 Typical Performance (cont.) -2 0 200 -3 0 170 -4 0 Idd (mA) S12 (dB) (TA = 25°C, Vdd=4V, Idd=138mA, Zin = Zout = 50 W unless noted) -5 0 140 110 -6 0 80 -7 0 15 20 25 30 Frequency (GHz) 50 35 3 5 5 4 Noise Figure (dB) 30 20 4V 5V 3V 10 0 15 20 25 30 3 3V 4V 5V 2 1 0 18 35 20 22 24 26 28 30 32 Frequency (GHz) Frequency (GHz) Figure 9. Gain over Vdd Figure 10. Noise Figure over Vdd 0 0 -5 -5 -1 0 -1 5 S22 (dB) -1 0 S11 (dB) 4 .5 Figure 8. Total Current 40 4V 3V -2 0 15 -1 5 4V -2 0 5V -2 5 5V -2 5 3V -3 0 20 25 Frequency (GHz) Figure 11. Input Return Loss Over Vdd 5 4 Vdd (V) Figure 7. Isolation S21 (dB) 3 .5 30 35 15 20 25 Frequency (GHz) Figure 12. Output Return Loss Over Vdd 30 35 AMMP-6232 Typical Performance (cont.) (TA = 25°C, Vdd=4V, Idd=138mA, Zin = Zout = 50 W unless noted) 25 35 30 25 OIP3 (dBm) OP1dB (dBm) 20 15 3V 4V 10 5V 5 18 20 22 24 26 28 30 20 3V 15 4V 10 5V 5 32 18 20 22 Frequency (GHz) Figure 13. Output P-1dB over Vdd 30 32 4 Noise Figure (dB) S21 (dB) 28 5 30 20 25C 10 85C -40C 0 15 20 25 30 3 2 -40C 25C 85C 1 0 18 35 20 22 24 26 28 30 32 Frequency (GHz) Frequency (GHz) Figure 15. Gain over Temp Figure 16. Noise Figure over Temp 0 0 -5 -5 -10 -1 0 -1 5 S22 (dB) S11 (dB) 26 Figure 14. Output IP3 Over Vdd 40 25 C -4 0C 85 C -2 0 -2 5 15 20 -15 25 C 85 C -40C -20 -25 -30 25 Frequency (GHz) Figure 17. Input Return Loss Over Temp 6 24 Frequency (GHz) 30 35 15 20 25 Frequency (GHz) Figure 18. Output Return Loss Over Temp 30 35 AMMP-6232 Application and Usage Biasing and Operation The AMMP-6232 is normally biased with a positive drain supply connected to the VDD pin and a negative gate bias through bypass capacitors as shown in Figure 19. The recommended drain supply voltage is 4 V and the gate bias is approximately -0.95V to get the corresponding drain current of 138mA. It is important to have 0.1uF bypass capacitors and the capacitor should be placed as close to the component as possible. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity, or low noise (Topt) matching. 4V Vdd 1 IN 0.1uF 2 3 100pF 8 4 OUT After adjusting the gate bias to obtain 138mA at Vdd = 4V, the AMMP-6232 can be safely biased at 3V or 5V (while fixing the gate bias) as desired. At 4V, the performance is an optimal compromise between power consumption, gain and power/linearity. It is both applicable to be used as a low noise block or driver. At 3V, the amplifier is ideal as a front end low noise block where linearity is not highly required. At 5V, the amplifier can provide 1 to 2dBm more output power for LO or transmitter driver applications where high output power and linearity are often required. 100pF 7 6 5 0.1uF Vg Top View Package base: GND ~ -0.95V Figure 19. Usage of the AMMP-6232 Refer the Absolute Maximum Ratings table for allowed DC and thermal conditions. Figure 20. Evaluation/Test Board (available to qualified customer request) Vd1 Matching Ne twork In Vg1 Figure 21. Simplified AMMP-6232 Schematic 7 Vd2 Matching Network Matching Network Vg2 Out Typical Scattering Parameters Please refer to <http://www.avagotech.com> for typical scattering parameters data. Package Dimension, PCB Layout and Tape and Reel information Please refer to Avago Technologies Application Note 5520, AMxP-xxxx production Assembly Process (Land Pattern A). AMMP-6232 Part Number Ordering Information Part Number Devices Per Container Container AMMP-6232-BLKG 10 Antistatic bag AMMP-6232-TR1G 100 7” Reel AMMP-6232-TR2G 500 7” Reel For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. Obsoletes AV01-0442EN AV02-0491EN - July 8, 2013