GE ES2B Surface mount fast efficient plastic rectifier Datasheet

ES2A THRU ES2D
SURFACE MOUNT FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts
Forward Current - 2.0 Amperes
DO-214AA
FEATURES
0.086 (2.20)
0.155 (3.94)
0.130 (3.30)
0.077 (1.95)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
¨ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
¨ For surface mount applications
¨ Low profile package
¨ Built-in strain relief
¨ Ideal for automated placement
¨ Easy pick and place
¨ Glass passivated chip junction
¨ Superfast recovery times for high efficiency
¨ Low power loss, high efficiency
¨ High temperature soldering: 250¡C/10 seconds at terminals
MECHANICAL DATA
0.008 (0.203)
MAX.
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
Dimensions in inches and (millimeters)
Case: JEDEC DO-214AA molded plastic body over passivated chip
Terminals: Solder plated solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified.
SYMBOLS
Device marking code
ES2A
ES2B
ES2C
ES2D
EA
EB
EC
ED
UNITS
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
Volts
Maximum RMS voltage
VRMS
35
70
105
140
Volts
VDC
50
100
150
200
Volts
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=110¡C
I(AV)
2.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) at TL=110¡C
IFSM
50.0
Amps
VF
0.90
Volts
IR
10.0
350
mA
trr
20.0
ns
TJ=25¡C
TJ=100¡C
trr
30.0
50.0
ns
TJ=25¡C
TJ=100¡C
Qrr
10.0
25.0
nC
Typical junction capacitance (NOTE 3)
CJ
18.0
pF
Maximum thermal resistance (NOTE 4)
RQJA
RQJL
75.0
20.0
¡C/W
TJ, TSTG
-55 to +150
¡C
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25¡C
TA=100¡C
Maximum reverse recovery time (NOTE 1)
Maximum reverse recovery time
(NOTE 2)
Maximum stored charge
(NOTE 2)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR= I.0A, lrr=0.25A
(2) Trr and Qrr measured at: IF=2.0A, VR=30V, di/dt=50A/ms, Irr=10% IR
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Units mounted on P.C.B. 5.0 x 5.0mm (0.013mm thick) land areas
2/10/99
RATING AND CHARACTERISTIC CURVES ES2A THRU ES2D
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
RESISTIVE OR INDUCTIVE LOAD
P.C.B. MOUNTED ON 0.2 x 0.2Ó (5.0
x 5.0mm) COPPER PAD AREAS
0
80
90
100
110
120
130
140
150
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
30
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method) at TL=110¡C
25
20
15
10
5.0
0
1
100
10
LEAD TEMPERATURE, ¡C
NUMBER OF CYCLES AT 60 HZ
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1,000
100
TJ=125¡C
10
TJ=25¡C
PULSE WIDTH=300ms
1% DUTY CYCLE
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD CURRENT,
AMPERES
50
1
TJ=25¡C
0.1
0.01
0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
40
20
80
60
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
100
14
JUNCTION CAPACITANCE, pF
TJ=85¡C
10
TJ=25¡C
f=1.0 MHZ
Vsig=50mVp-p
12
10
8.0
10
6.0
4.0
2.0
0
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
1
0.1
1
10
100
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