STMicroelectronics M95128-WMN6TG/P 128 kbit serial spi bus eeprom with high speed clock Datasheet

M95128
M95128-W M95128-R
128 Kbit serial SPI bus EEPROM
with high speed clock
Features
■
Compatible with SPI bus serial interface
(positive clock SPI modes)
■
Single supply voltage:
– 4.5 to 5.5 V for M95128
– 2.5 to 5.5 V for M95128-W
– 1.8 to 5.5 V for M95128-R
SO8 (MN)
150 mil width
■
High speed
– 10 MHz clock rate, 5 ms write time
■
Status Register
■
Hardware protection of the Status Register
■
Byte and Page Write (up to 64 bytes)
■
Self-timed programming cycle
■
Adjustable size read-only EEPROM area
■
Enhanced ESD protection
■
More than 1 000 000 write cycles
■
More than 40-year data retention
■
Packages
– ECOPACK2® (RoHS compliant and
Halogen-free)
TSSOP8 (DW)
169 mil width
UFDFPN8 (MB)
2 × 3 mm
March 2010
Doc ID 5798 Rev 13
1/44
www.st.com
1
Contents
M95128, M95128-W, M95128-R
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2
Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.1
Serial Data output (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.2
Serial Data input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.3
Serial Clock (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.4
Chip Select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.5
Hold (HOLD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.6
Write Protect (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.7
VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.8
Supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.8.1
4
5
2/44
3.8.2
Operating supply voltage VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.8.3
Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.8.4
Power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Operating features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1
Hold condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2
Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3
Data Protection and protocol control . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.1
Write Enable (WREN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.2
Write Disable (WRDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3
Read Status Register (RDSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3.1
WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3.2
WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3.3
BP1, BP0 bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3.4
SRWD bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4
Write Status Register (WRSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.5
Read from Memory Array (READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
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M95128, M95128-W, M95128-R
5.6
Contents
Write to Memory Array (WRITE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5.6.1
ECC (error correction code) and write cycling . . . . . . . . . . . . . . . . . . . . 22
6
Delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
7
Connecting to the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
7.1
SPI modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
8
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
9
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
11
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
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List of tables
M95128, M95128-W, M95128-R
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
4/44
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Write-protected block size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Instruction set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Status Register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Operating conditions (M95128) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Operating conditions (M95128-W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Operating conditions (M95128-R). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
DC characteristics (M95128, device grade 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
DC characteristics (M95128-W, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DC characteristics (M95128-W, device grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DC characteristics (M95128-R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
AC characteristics (M95128, device grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
AC characteristics (M95128-W, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
AC characteristics (M95128-W, device grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
AC characteristics (M95128-R). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
SO8N – 8-lead plastic small outline, 150 mils body width, package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
TSSOP8 – 8-lead thin shrink small outline, package mechanical data. . . . . . . . . . . . . . . . 37
UFDFPN8, 8-lead ultra thin fine pitch dual flat package no lead 2 x 3 mm,
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Available M95128x products (package, voltage range, temperature grade) . . . . . . . . . . . 40
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
SO, UFDFPN and TSSOP connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Hold condition activation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Write Enable (WREN) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Write Disable (WRDI) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Read Status Register (RDSR) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Write Status Register (WRSR) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Read from Memory Array (READ) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Byte Write (WRITE) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Page Write (WRITE) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Bus master and memory devices on the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Hold timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Serial output timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
SO8N – 8-lead plastic small outline, 150 mils body width, package outline . . . . . . . . . . . . 36
TSSOP8 – 8-lead thin shrink small outline, package outline . . . . . . . . . . . . . . . . . . . . . . . 37
UFDFPN8, 8-lead ultra thin fine pitch dual flat package no lead 2 x 3 mm, outline . . . . . . 38
Doc ID 5798 Rev 13
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Description
1
M95128, M95128-W, M95128-R
Description
The M95128, M95128-W and M95128-R are electrically erasable programmable memory
(EEPROM) devices accessed by a high speed SPI-compatible bus. The memory array is
organized as 16384 × 8 bits.
The device is accessed by a simple serial interface that is SPI-compatible. The bus signals
are C, D and Q, as shown in Table 1 and Figure 1.
The device is selected when Chip Select (S) is taken low. Communications with the device
can be interrupted using Hold (HOLD).
Figure 1.
Logic diagram
VCC
D
Q
C
S
M95128
W
HOLD
VSS
AI12805
Figure 2.
SO, UFDFPN and TSSOP connections
M95128
S
Q
W
VSS
1
2
3
4
8
7
6
5
VCC
HOLD
C
D
AI12806
1. See Section 10: Package mechanical data for package dimensions, and how to identify pin-1.
6/44
Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
Table 1.
Description
Signal names
Signal name
Function
Direction
C
Serial Clock
Input
D
Serial Data input
Input
Q
Serial Data output
Output
S
Chip Select
Input
W
Write Protect
Input
HOLD
Hold
Input
VCC
Supply voltage
VSS
Ground
Doc ID 5798 Rev 13
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Memory organization
2
M95128, M95128-W, M95128-R
Memory organization
The memory is organized as shown in Figure 3.
Figure 3.
Block diagram
HOLD
W
High Voltage
Generator
Control Logic
S
C
D
I/O Shift Register
Q
Address Register
and Counter
Data
Register
Size of the
Read only
EEPROM
area
Y Decoder
Status
Register
1 Page
X Decoder
AI01272C
8/44
Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
3
Signal description
Signal description
See Figure 1: Logic diagram and Table 1: Signal names, for a brief overview of the signals
connected to this device.
3.1
Serial Data output (Q)
This output signal is used to transfer data serially out of the device. Data is shifted out on the
falling edge of Serial Clock (C).
3.2
Serial Data input (D)
This input signal is used to transfer data serially into the device. It receives instructions,
addresses, and the data to be written. Values are latched on the rising edge of Serial Clock
(C).
3.3
Serial Clock (C)
This input signal provides the timing of the serial interface. Instructions, addresses, or data
present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on
Serial Data Output (Q) changes after the falling edge of Serial Clock (C).
3.4
Chip Select (S)
When this input signal is high, the device is deselected and Serial Data Output (Q) is at high
impedance. Unless an internal write cycle is in progress, the device will be in the Standby
Power mode. Driving Chip Select (S) low selects the device, placing it in the Active Power
mode.
After Power-up, a falling edge on Chip Select (S) is required prior to the start of any
instruction.
3.5
Hold (HOLD)
The Hold (HOLD) signal is used to pause any serial communications with the device without
deselecting the device.
During the Hold condition, the Serial Data Output (Q) is high impedance, and Serial Data
Input (D) and Serial Clock (C) are Don’t Care.
To start the Hold condition, the device must be selected, with Chip Select (S) driven low.
Doc ID 5798 Rev 13
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Signal description
3.6
M95128, M95128-W, M95128-R
Write Protect (W)
The main purpose of this input signal is to freeze the size of the area of memory that is
protected against Write instructions (as specified by the values in the BP1 and BP0 bits of
the Status Register).
This pin must be driven either high or low, and must be stable during all write instructions.
3.7
VSS ground
VSS is the reference for the VCC supply voltage.
3.8
Supply voltage (VCC)
3.8.1
Operating supply voltage VCC
Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage
within the specified [VCC(min), VCC(max)] range must be applied (see Table 7, Table 8 and
Table 9). This voltage must remain stable and valid until the end of the transmission of the
instruction and, for a Write instruction, until the completion of the internal write cycle (tW). In
order to secure a stable DC supply voltage, it is recommended to decouple the VCC line with
a suitable capacitor (usually of the order of 10 nF to 100 nF) close to the VCC/VSS package
pins.
3.8.2
Device reset
In order to prevent inadvertent write operations during power-up, a power-on-reset (POR)
circuit is included. At power-up, the device does not respond to any instruction until VCC
reaches the internal reset threshold voltage (this threshold is defined in DC tables 12, 13, 14
and 15 as VRES.
When VCC passes over the POR threshold, the device is reset and in the following state:
●
in Standby Power mode
●
deselected (note that, to be executed, an instruction must be preceded by a falling
edge on Chip Select (S))
●
Status register values:
–
the Write Enable Latch (WEL) bit is reset to 0
–
the Write In Progress (WIP) bit is reset to 0
–
the SRWD, BP1 and BP0 bits remain unchanged (non-volatile bits).
When VCC passes over the POR threshold, the device is reset and enters the Standby
Power mode. The device must not be accessed until VCC reaches a valid and stable VCC
voltage within the specified [VCC(min), VCC(max)] range defined in Table 7, Table 8 and
Table 9.
10/44
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M95128, M95128-W, M95128-R
3.8.3
Signal description
Power-up conditions
When the power supply is turned on, VCC continuously rises from VSS to VCC. During this
time, the Chip Select (S) line is not allowed to float but should follow the VCC voltage. It is
therefore recommended to connect the S line to VCC via a suitable pull-up resistor (see
Figure 12).
In addition, the Chip Select (S) input offers a built-in safety feature, as it is edge-sensitive as
well as level-sensitive: after power-up, the device does not become selected until a falling
edge has first been detected on Chip Select (S). This ensures that Chip Select (S) must
have been high, prior to going low to start the first operation.
The VCC voltage has to rise continuously from 0 V up to the minimum VCC operating voltage
defined in Table 7, Table 8 and Table 9 and the rise time must not vary faster than 1 V/µs.
3.8.4
Power-down
During power-down (continuous decrease in the VCC supply voltage below the minimum
VCC operating voltage defined in Table 7, Table 8 and Table 9), the device must be:
●
deselected (Chip Select S should be allowed to follow the voltage applied on VCC)
●
in Standby Power mode (there should not be any internal write cycle in progress).
Doc ID 5798 Rev 13
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Operating features
M95128, M95128-W, M95128-R
4
Operating features
4.1
Hold condition
The Hold (HOLD) signal is used to pause any serial communications with the device without
resetting the clocking sequence.
During the Hold condition, the Serial Data Output (Q) is high impedance, and Serial Data
Input (D) and Serial Clock (C) are Don’t Care.
To enter the Hold condition, the device must be selected, with Chip Select (S) low.
Normally, the device is kept selected, for the whole duration of the Hold condition.
Deselecting the device while it is in the Hold condition, has the effect of resetting the state of
the device, and this mechanism can be used if it is required to reset any processes that had
been in progress.
The Hold condition starts when the Hold (HOLD) signal is driven low at the same time as
Serial Clock (C) already being low (as shown in Figure 4).
The Hold condition ends when the Hold (HOLD) signal is driven high at the same time as
Serial Clock (C) already being low.
Figure 4 also shows what happens if the rising and falling edges are not timed to coincide
with Serial Clock (C) being low.
Figure 4.
Hold condition activation
C
HOLD
Hold
Condition
Hold
Condition
AI02029D
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M95128, M95128-W, M95128-R
4.2
Operating features
Status Register
Figure 3 shows the position of the Status Register in the control logic of the device. The
Status Register contains a number of status and control bits that can be read or set (as
appropriate) by specific instructions. For a detailed description of the Status Register bits,
see Section 5.3: Read Status Register (RDSR).
4.3
Data Protection and protocol control
Non-volatile memory devices can be used in environments that are particularly noisy, and
within applications that could experience problems if memory bytes are corrupted.
Consequently, the device features the following data protection mechanisms:
●
Write and Write Status Register instructions are checked that they consist of a number
of clock pulses that is a multiple of eight, before they are accepted for execution.
●
All instructions that modify data must be preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state
by the following events:
–
Power-up
–
Write Disable (WRDI) instruction completion
–
Write Status Register (WRSR) instruction completion
–
Write (WRITE) instruction completion
●
The Block Protect (BP1, BP0) bits in the Status Register allow part of the memory to be
configured as read-only.
●
The Write Protect (W) signal is used to protect the Block Protect (BP1, BP0) bits of the
Status Register.
For any instruction to be accepted, and executed, Chip Select (S) must be driven high after
the rising edge of Serial Clock (C) for the last bit of the instruction, and before the next rising
edge of Serial Clock (C).
Two points need to be noted in the previous sentence:
●
The ‘last bit of the instruction’ can be the eighth bit of the instruction code, or the eighth
bit of a data byte, depending on the instruction (except for Read Status Register
(RDSR) and Read (READ) instructions).
●
The ‘next rising edge of Serial Clock (C)’ might (or might not) be the next bus
transaction for some other device on the SPI bus.
Table 2.
Write-protected block size
Status Register bits
Array addresses protected
Protected block
BP1
BP0
M95128, M95128-W, M95128-R
0
0
none
none
0
1
Upper quarter
3000h - 3FFFh
1
0
Upper half
2000h - 3FFFh
1
1
Whole memory
0000h - 3FFFh
Doc ID 5798 Rev 13
13/44
Instructions
5
M95128, M95128-W, M95128-R
Instructions
Each instruction starts with a single-byte code, as summarized in Table 3.
If an invalid instruction is sent (one not contained in Table 3), the device automatically
deselects itself.
Table 3.
Instruction set
Instruction
5.1
Description
Instruction format
WREN
Write Enable
0000 0110
WRDI
Write Disable
0000 0100
RDSR
Read Status Register
0000 0101
WRSR
Write Status Register
0000 0001
READ
Read from Memory Array
0000 0011
WRITE
Write to Memory Array
0000 0010
Write Enable (WREN)
The Write Enable Latch (WEL) bit must be set prior to each WRITE and WRSR instruction.
The only way to do this is to send a Write Enable instruction to the device.
As shown in Figure 5, to send this instruction to the device, Chip Select (S) is driven low,
and the bits of the instruction byte are shifted in, on Serial Data Input (D). The device then
enters a wait state. It waits for a the device to be deselected, by Chip Select (S) being driven
high.
Figure 5.
Write Enable (WREN) sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
AI02281E
14/44
Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
5.2
Instructions
Write Disable (WRDI)
One way of resetting the Write Enable Latch (WEL) bit is to send a Write Disable instruction
to the device.
As shown in Figure 6, to send this instruction to the device, Chip Select (S) is driven low,
and the bits of the instruction byte are shifted in, on Serial Data Input (D).
The device then enters a wait state. It waits for a the device to be deselected, by Chip Select
(S) being driven high.
The Write Enable Latch (WEL) bit, in fact, becomes reset by any of the following events:
●
Power-up
●
WRDI instruction execution
●
WRSR instruction completion
●
WRITE instruction completion.
Figure 6.
Write Disable (WRDI) sequence
S
0
1
2
3
4
5
6
7
C
Instruction
D
High Impedance
Q
AI03750D
Doc ID 5798 Rev 13
15/44
Instructions
5.3
M95128, M95128-W, M95128-R
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the Status Register to be read. The
Status Register may be read at any time, even while a Write or Write Status Register cycle
is in progress. When one of these cycles is in progress, it is recommended to check the
Write In Progress (WIP) bit before sending a new instruction to the device. It is also possible
to read the Status Register continuously, as shown in Figure 7.
The status and control bits of the Status Register are as follows:
5.3.1
WIP bit
The Write In Progress (WIP) bit indicates whether the memory is busy with a Write or Write
Status Register cycle. When set to 1, such a cycle is in progress, when reset to 0 no such
cycle is in progress.
5.3.2
WEL bit
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable
Latch is reset and no Write or Write Status Register instruction is accepted.
5.3.3
BP1, BP0 bits
The Block Protect (BP1, BP0) bits are non-volatile. They define the size of the area to be
software protected against Write instructions. These bits are written with the Write Status
Register (WRSR) instruction. When one or both of the Block Protect (BP1, BP0) bits is set to
1, the relevant memory area (as defined in Table 4) becomes protected against Write
(WRITE) instructions. The Block Protect (BP1, BP0) bits can be written provided that the
Hardware Protected mode has not been set.
5.3.4
SRWD bit
The Status Register Write Disable (SRWD) bit is operated in conjunction with the Write
Protect (W) signal. The Status Register Write Disable (SRWD) bit and Write Protect (W)
signal allow the device to be put in the Hardware Protected mode (when the Status Register
Write Disable (SRWD) bit is set to 1, and Write Protect (W) is driven low). In this mode, the
non-volatile bits of the Status Register (SRWD, BP1, BP0) become read-only bits and the
Write Status Register (WRSR) instruction is no longer accepted for execution.
Table 4.
Status Register format
b7
SRWD
b0
0
0
0
BP1
BP0
WEL
WIP
Status Register Write Protect
Block Protect bits
Write Enable Latch bit
Write In Progress bit
16/44
Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
Figure 7.
Instructions
Read Status Register (RDSR) sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
Instruction
D
Status Register Out
Status Register Out
High Impedance
Q
7
6
5
4
3
MSB
2
1
0
7
6
5
4
3
2
1
0
7
MSB
AI02031E
Doc ID 5798 Rev 13
17/44
Instructions
5.4
M95128, M95128-W, M95128-R
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new values to be written to the Status
Register. Before it can be accepted, a Write Enable (WREN) instruction must previously
have been executed.
The Write Status Register (WRSR) instruction is entered by driving Chip Select (S) low,
sending the instruction code followed by the data byte on Serial Data input (D), and driving
the Chip Select (S) signal high. Chip Select (S) must be driven high after the rising edge of
Serial Clock (C) that latches in the eighth bit of the data byte, and before the next rising edge
of Serial Clock (C). Otherwise, the Write Status Register (WRSR) instruction is not
executed.
Driving the Chip Select (S) signal high at a byte boundary of the input data triggers the selftimed write cycle that takes tW to complete (as specified in Table 16, Table 17, Table 19 and
Table 19). The instruction sequence is shown in Figure 8.
While the Write Status Register cycle is in progress, the Status Register may still be read to
check the value of the Write in progress (WIP) bit: the WIP bit is 1 during the self-timed write
cycle tW, and, 0 when the write cycle is complete. The WEL bit (Write enable latch) is also
reset at the end of the write cycle tW.
The Write Status Register (WRSR) instruction allows the user to change the values of the
BP1, BP0 and SRWD bits:
●
The Block protect (BP1, BP0) bits define the size of the area that is to be treated as
read only, as defined in Table 5.
●
The SRWD bit (Status register write disable bit), in accordance with the signal read on
the Write protect pin (W), allows the user to set or reset the write protection mode of the
Status Register itself, as shown in Table 5. When in the Write-protected mode, the
Write Status Register (WRSR) instruction is not executed.
The contents of the SRWD and BP1, BP0 bits are updated after the completion of the
WRSR instruction, including the tW write cycle.
The Write Status Register (WRSR) instruction has no effect on the b6, b5, b4, b1 and b0
bits in the Status Register. Bits b6, b5, b4 are always read as 0.
Table 5.
Protection modes
W
signal
SRWD
bit
1
0
0
0
1
0
1
1
Mode
Write protection of the
Status Register
Memory content
Protected area(1)
Unprotected area(1)
Status Register is
Writable (if the WREN
Software instruction has set the
Protected WEL bit)
(SPM) The values in the BP1
and BP0 bits can be
changed
Write Protected
Ready to accept Write
instructions
Status Register is
Hardware Hardware write protected
Protected The values in the BP1
(HPM) and BP0 bits cannot be
changed
Write Protected
Ready to accept Write
instructions
1. As defined by the values in the Block Protect (BP1, BP0) bits of the Status Register, as shown in Table 5.
18/44
Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
Instructions
The protection features of the device are summarized in Table 2.
When the Status Register Write Disable (SRWD) bit of the Status Register is 0 (its initial
delivery state), it is possible to write to the Status Register provided that the Write Enable
Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction, regardless
of whether Write Protect (W) is driven high or low.
When the Status Register Write Disable (SRWD) bit of the Status Register is set to 1, two
cases need to be considered, depending on the state of Write Protect (W):
●
If Write Protect (W) is driven high, it is possible to write to the Status Register provided
that the Write Enable Latch (WEL) bit has previously been set by a Write Enable
(WREN) instruction.
●
If Write Protect (W) is driven low, it is not possible to write to the Status Register even if
the Write enable Latch (WEL) bit has previously been set by a Write Enable (WREN)
instruction. (Attempts to write to the Status Register are rejected, and are not accepted
for execution.) As a consequence, all the data bytes in the memory area that are
software-protected (SPM) by the Block protect (BP1, BP0) bits in the Status Register,
are also hardware-protected against data modification.
Regardless of the order of the two events, the Hardware-protected mode (HPM) can be
entered:
●
by setting the Status register write disable (SRWD) bit after driving Write Protect (W)
low
●
or by driving Write Protect (W) low after setting the Status Register Write Disable
(SRWD) bit.
The only way to exit the Hardware-protected mode (HPM) once entered is to pull Write
Protect (W) high.
If Write Protect (W) is permanently tied high, the Hardware-protected mode (HPM) can
never be activated, and only the Software-protected mode (SPM), using the Block protect
(BP1, BP0) bits in the Status Register, can be used.
Figure 8.
Write Status Register (WRSR) sequence
S
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
C
Instruction
Status
Register In
7
D
High Impedance
6
5
4
3
2
1
0
MSB
Q
AI02282D
Doc ID 5798 Rev 13
19/44
Instructions
5.5
M95128, M95128-W, M95128-R
Read from Memory Array (READ)
As shown in Figure 9, to send this instruction to the device, Chip Select (S) is first driven low.
The bits of the instruction byte and address bytes are then shifted in, on Serial Data Input
(D). The address is loaded into an internal address register, and the byte of data at that
address is shifted out, on Serial Data Output (Q).
If Chip Select (S) continues to be driven low, the internal address register is automatically
incremented, and the byte of data at the new address is shifted out.
When the highest address is reached, the address counter rolls over to zero, allowing the
Read cycle to be continued indefinitely. The whole memory can, therefore, be read with a
single READ instruction.
The Read cycle is terminated by driving Chip Select (S) high. The rising edge of the Chip
Select (S) signal can occur at any time during the cycle.
The first byte addressed can be any byte within any page.
The instruction is not accepted, and is not executed, if a write cycle is currently in progress.
Figure 9.
Read from Memory Array (READ) sequence
S
0
1
2
3
4
5
6
7
8
9 10
20 21 22 23 24 25 26 27 28 29 30 31
C
Instruction
16-Bit Address
15 14 13
D
3
2
1
0
MSB
Data Out 1
High Impedance
7
Q
6
5
4
3
2
Data Out 2
1
0
7
MSB
AI01793D
1. The most significant address bits (b15, b14) are Don’t Care.
20/44
Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
5.6
Instructions
Write to Memory Array (WRITE)
As shown in Figure 10, to send this instruction to the device, Chip Select (S) is first driven
low. The bits of the instruction byte, address byte, and at least one data byte are then shifted
in, on Serial Data Input (D). The instruction is terminated by driving Chip Select (S) high at a
byte boundary of the input data. The self-timed write cycle, triggered by the rising edge of
Chip Select (S), continues for a period tWC (as specified in Table 16 to Table 19.), at the end
of which the Write in Progress (WIP) bit is reset to 0.
In the case of Figure 10, Chip Select (S) is driven high after the eighth bit of the data byte
has been latched in, indicating that the instruction is being used to write a single byte. If,
though, Chip Select (S) continues to be driven low, as shown in Figure 11., the next byte of
input data is shifted in, so that more than a single byte, starting from the given address
towards the end of the same page, can be written in a single internal write cycle.
Each time a new data byte is shifted in, the least significant bits of the internal address
counter are incremented. If the number of data bytes sent to the device exceeds the page
boundary, the internal address counter rolls over to the beginning of the page, and the
previous data there are overwritten with the incoming data. (The page size of these devices
is 64 bytes).
The instruction is not accepted, and is not executed, under the following conditions:
Note:
●
if the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable
instruction just before)
●
if a write cycle is already in progress
●
if the device has not been deselected, by Chip Select (S) being driven high, at a byte
boundary (after the eighth bit, b0, of the last data byte that has been latched in)
●
if the addressed page is in the region protected by the Block Protect (BP1 and BP0)
bits.
The self-timed write cycle tW is internally executed as a sequence of two consecutive
events: [Erase addressed byte(s)], followed by [Program addressed byte(s)]. An erased bit is
read as “0” and a programmed bit is read as “1”.
Figure 10. Byte Write (WRITE) sequence
S
0
1
2
3
4
5
6
7
8
9 10
20 21 22 23 24 25 26 27 28 29 30 31
C
Instruction
16-Bit Address
15 14 13
D
3
2
Data Byte
1
0
7
6
5
4
3
2
1
0
High Impedance
Q
AI01795D
1. The most significant address bits (b15, b14) are Don’t Care.
Doc ID 5798 Rev 13
21/44
Instructions
M95128, M95128-W, M95128-R
Figure 11. Page Write (WRITE) sequence
S
0
1
2
3
4
5
6
7
8
20 21 22 23 24 25 26 27 28 29 30 31
9 10
C
Instruction
16-Bit Address
15 14 13
D
3
2
Data Byte 1
1
0
7
6
5
4
3
2
0
1
S
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
Data Byte 2
D
7
6
5
4
3
2
Data Byte 3
1
0
7
6
5
4
3
2
Data Byte N
1
0
6
5
4
3
2
1
0
AI01796D
1. The most significant address bits (b15, b14) are Don’t Care.
5.6.1
ECC (error correction code) and write cycling
Most M95128, M95128-W and M95128-R devices offer an ECC (error correction code) logic
which compares each 4-byte word with 6 EEPROM bits of ECC (the list of concerned
devices is defined in Table 24: Available M95128x products (package, voltage range,
temperature grade)). As a result, if a single bit out of 4 bytes of data happens to be
erroneous during a read operation, the ECC detects it and replaces it by the correct value.
The read reliability is therefore improved by the use of this feature.
Note however that even if a single byte has to be written, 4 bytes are internally modified
(plus the ECC bits), that is, the addressed byte is cycled together with the three other bytes
making up the word. It is therefore recommended to write by packets of 4 bytes in order to
benefit from the larger amount of write cycles.
The maximum number of write cycles is qualified at 1 Million (1 000 000) write cycles, using
a cycling routine that writes to the device by multiples of 4-byte packets.
22/44
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M95128, M95128-W, M95128-R
6
Delivery state
Delivery state
The device is delivered with the memory array set at all 1s (FFh). The Status Register Write
Disable (SRWD) and Block Protect (BP1 and BP0) bits are initialized to 0.
7
Connecting to the SPI bus
These devices are fully compatible with the SPI protocol.
All instructions, addresses and input data bytes are shifted in to the device, most significant
bit first. The Serial Data Input (D) is sampled on the first rising edge of the Serial Clock (C)
after Chip Select (S) goes low.
All output data bytes are shifted out of the device, most significant bit first. The Serial Data
Output (Q) is latched on the first falling edge of the Serial Clock (C) after the instruction
(such as the Read from Memory Array and Read Status Register instructions) have been
clocked into the device.
Figure 12. Bus master and memory devices on the SPI bus
VSS
VCC
R
SDO
SPI Interface with
(CPOL, CPHA) =
(0, 0) or (1, 1)
SDI
SCK
VCC
C Q D
Bus master
VSS
SPI memory
device
R
CS3
VCC
C Q D
VCC
C Q D
VSS
SPI memory
device
R
VSS
SPI memory
device
R
CS2 CS1
S
W
HOLD
S
W
HOLD
S
W
HOLD
AI12304c
1. The Write Protect (W) and Hold (HOLD) signals should be driven, high or low as appropriate.
Figure 12 shows an example of three memory devices connected to an MCU, on an SPI
bus. Only one memory device is selected at a time, so only one memory device drives the
Serial Data Output (Q) line at a time, the other memory devices are high impedance.
The pull-up resistor R (represented in Figure 12) ensures that a device is not selected if the
bus master leaves the S line in the high impedance state.
Doc ID 5798 Rev 13
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Connecting to the SPI bus
M95128, M95128-W, M95128-R
In applications where the bus master might enter a state where all inputs/outputs SPI bus
would be in high impedance at the same time (for example, if the bus master is reset during
the transmission of an instruction), the clock line (C) must be connected to an external pulldown resistor so that, if all inputs/outputs become high impedance, the C line is pulled low
(while the S line is pulled high): this will ensure that S and C do not become high at the
same time, and so, that the tSHCH requirement is met. The typical value of R is 100 k.
7.1
SPI modes
These devices can be driven by a microcontroller with its SPI peripheral running in either of
the two following modes:
●
CPOL=0, CPHA=0
●
CPOL=1, CPHA=1
For these two modes, input data is latched in on the rising edge of Serial Clock (C), and
output data is available from the falling edge of Serial Clock (C).
The difference between the two modes, as shown in Figure 13, is the clock polarity when the
bus master is in Stand-by mode and not transferring data:
●
C remains at 0 for (CPOL=0, CPHA=0)
●
C remains at 1 for (CPOL=1, CPHA=1)
Figure 13. SPI modes supported
CPOL CPHA
0
0
C
1
1
C
D
MSB
Q
MSB
AI01438B
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Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
8
Maximum rating
Maximum rating
Stressing the device outside the ratings listed in Table 6 may cause permanent damage to
the device. These are stress ratings only, and operation of the device at these, or any other
conditions outside those indicated in the operating sections of this specification, is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability. Refer also to the STMicroelectronics SURE Program and other relevant
quality documents.
Table 6.
Absolute maximum ratings
Symbol
TA
TSTG
TLEAD
Parameter
Min.
Max.
Unit
Ambient operating temperature
–40
130
°C
Storage temperature
–65
150
°C
Lead temperature during soldering
See
note (1)
°C
VO
Output voltage
–0.50
VCC+0.6
V
VI
Input voltage
–0.50
6.5
V
IOL
DC output current (Q = 0)
5
mA
IOH
DC output current (Q = 1)
–5
mA
VCC
Supply voltage
–0.50
6.5
V
–4000
4000
V
VESD
Electrostatic discharge voltage (human body
model)(2)
1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK®
7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS)
2002/95/EU
2. AEC-Q100-002 (compliant with JEDEC Std JESD22-A114, C1 = 100 p F, R1 = 1500 , R2 = 500 ).
Doc ID 5798 Rev 13
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DC and AC parameters
9
M95128, M95128-W, M95128-R
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristic tables that
follow are derived from tests performed under the measurement conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 7.
Operating conditions (M95128)
Symbol
VCC
TA
Table 8.
Parameter
Min.
Max.
Unit
Supply voltage
4.5
5.5
V
Ambient operating temperature (device grade 3)
–40
125
°C
Operating conditions (M95128-W)
Symbol
VCC
TA
Table 9.
Parameter
Min.
Max.
Unit
Supply voltage
2.5
5.5
V
Ambient operating temperature (device grade 6)
–40
85
°C
Ambient operating temperature (device grade 3)
–40
125
°C
Operating conditions (M95128-R)
Symbol
VCC
TA
26/44
Parameter
Min.
Max.
Unit
Supply voltage
1.8
5.5
V
Ambient operating temperature
–40
85
°C
Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
Table 10.
DC and AC parameters
AC measurement conditions
Symbol
CL
Parameter
Min.
Load capacitance
Max.
Unit
100
pF
Input rise and fall times
50
ns
Input pulse voltages
0.2VCC to 0.8VCC
V
Input and output(1) timing reference voltages
0.3VCC to 0.7VCC
V
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 14. AC measurement I/O waveform
Input Levels
Input and Output
Timing Reference Levels
0.8VCC
0.7VCC
0.3VCC
0.2VCC
AI00825B
Table 11.
Symbol
COUT
Capacitance(1)
Parameter
Test condition
Output capacitance (Q)
CIN
Min.
Max.
Unit
VOUT = 0 V
8
pF
Input capacitance (D)
VIN = 0 V
8
pF
Input capacitance (other pins)
VIN = 0 V
6
pF
1. Sampled only, not 100% tested, at TA =25 °C and a frequency of 5 MHz.
Table 12.
Symbol
DC characteristics (M95128, device grade 3)
Parameter
Test condition
ILI
Input leakage current
ILO
Output leakage current
ICC
Supply current
Min.
Max.
Unit
VIN = VSS or VCC
±2
µA
S = VCC, VOUT = VSS or VCC
±2
µA
C = 0.1VCC/0.9VCC at 5 MHz,
VCC = 5 V, Q = open
4
mA
C = 0.1VCC/0.9VCC at 10 MHz,
VCC = 5 V, Q = open
8
mA
S = VCC, VCC = 5 V,
VIN = VSS or VCC
5
µA
ICC1
Supply current
(Standby Power mode)
VIL
Input low voltage
–0.45
0.3 VCC
V
VIH
Input high voltage
0.7 VCC
VCC+1
V
0.4
V
VOL
(1)
Output low voltage
IOL = 2 mA, VCC = 5 V
VOH(1)
Output high voltage
IOH = –2 mA, VCC = 5 V
VRES(2)
Internal reset threshold
voltage
0.8 VCC
2.5
V
4.0
V
1. For all 5V range devices, the device meets the output requirements for both TTL and CMOS standards.
Doc ID 5798 Rev 13
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DC and AC parameters
M95128, M95128-W, M95128-R
2. Characterized only, not 100% tested.
Table 13.
Symbol
DC characteristics (M95128-W, device grade 6)
Parameter
Test condition
ILI
Input leakage current
ILO
Output leakage current
ICC
Supply current (Read)
Min.
Max.
Unit
VIN = VSS or VCC
±2
µA
S = VCC, VOUT = VSS or VCC
±2
µA
C = 0.1VCC/0.9VCC at 5 MHz,
VCC = 2.5 V, Q = open
3
mA
C = 0.1VCC/0.9VCC at 5 MHz,
VCC = 5 V, Q = open
5
mA
ICC0(1)
Supply current (Write)
During tW, S = VCC, 2.5 V < VCC < 5.5 V
5
mA
ICC1
Supply current
(Standby Power mode)
S = VCC, VIN = VSS or VCC,
2.5 V < VCC < 5.5 V
5
µA
VIL
Input low voltage
–0.45
0.3 VCC
V
VIH
Input high voltage
0.7 VCC
VCC+1
V
VOL
Output low voltage
0.4
V
VOH
Output high voltage
VRES(2)
VCC = 2.5 V and IOL = 1.5 mA or
VCC = 5 V and IOL = 2 mA
VCC = 2.5 V and IOH = –0.4 mA or VCC
0.8 VCC
= 5 V and IOH = –2 mA
Internal reset threshold
voltage
1.0
V
1.65
V
1. Characterized value, not tested in production.
2. Characterized only, not 100% tested.
Table 14.
Symbol
28/44
DC characteristics (M95128-W, device grade 3)
Parameter
Test condition
Min.
Max.
Unit
VIN = VSS or VCC
±2
µA
ILI
Input leakage current
ILO
Output leakage current
S = VCC, VOUT = VSS or VCC
±2
µA
ICC
Supply current (Read)
C = 0.1VCC/0.9VCC at 5 MHz,
VCC = 2.5 V, Q = open
3
mA
ICC0(1)
Supply current (Write)
During tW, S = VCC,
2.5 V < VCC < 5.5 V
6
mA
ICC1
Supply current
(Standby Power mode)
S = VCC, VIN = VSS or VCC
2.5 V < VCC < 5.5 V,
5
µA
VIL
Input low voltage
–0.45
0.3 VCC
V
VIH
Input high voltage
0.7 VCC
VCC+1
V
VOL
Output low voltage
0.4
V
VCC = 2.5 V and IOL = 1.5 mA or
VCC = 5 V and IOL = 2 mA
Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
Table 14.
Symbol
VOH
VRES(2)
DC and AC parameters
DC characteristics (M95128-W, device grade 3)
Parameter
Test condition
Min.
Max.
Unit
VCC = 2.5 V and IOH = –0.4 mA or
0.8 VCC
VCC = 5 V and IOH = –2 mA
Output high voltage
Internal reset threshold
voltage
1.0
V
1.65
V
1. Characterized value, not tested in production.
2. Characterized only, not 100% tested.
Table 15.
DC characteristics (M95128-R)
Symbol
Parameter
ILI
Input leakage current
ILO
Output leakage
current
ICCR
ICC1
Supply current (Read)
Supply current
(Standby)
VIL
Input low voltage
VIH
Input high voltage
VOL
Output low voltage
Test condition(1)
Min.
Max.
Unit
VIN = VSS or VCC
±2
µA
S = VCC, voltage applied on Q = VSS
or VCC
±2
µA
VCC = 1.8 V, C = 0.1 VCC or 0.9VCC,
fC = 2 MHz, Q = open
1
mA
VCC = 2.5 V, C = 0.1 VCC or 0.9VCC,
fC = 2 MHz, Q = open
3
mA
VCC = 5.0 V, S = VCC, VIN = VSS or
VCC
5
µA
VCC = 2.5 V, S = VCC, VIN = VSS or
VCC
3
µA
VCC = 1.8 V, S = VCC, VIN = VSS or
VCC
3
µA
2.5V < VCC < 5.5V
–0.45
0.3VCC
V
1.8V < VCC < 2.5V
–0.45
0.25VCC
V
2.5V < VCC < 5.5V
0.7VCC
VCC+1
V
1.8V < VCC < 2.5V
0.75VCC
VCC+1
V
0.2VCC
V
0.3
V
VCC = 2.5 V, IOL = 1.5 mA or
VCC = 5.5 V, IOL = 2 mA
VCC = 1.8 V, IOL = 0.15 mA
VOH
VRES(2)
Output high voltage
VCC = 2.5 V, IOH = –0.4 mA, or
VCC = 5.5 V, IOH = –2 mA, or
VCC = 1.8 V, IOH = –0.1 mA
Internal reset
threshold voltage
V
0.8VCC
1.0
1.65
V
1. If the application uses the M95128-R device with 2.5 V < VCC < 5.5 V and –40 °C < TA < +85 °C, please
refer to Table 17: AC characteristics (M95128-W, device grade 6) instead of the above table.
2. Characterized only, not 100% tested.
Doc ID 5798 Rev 13
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DC and AC parameters
Table 16.
M95128, M95128-W, M95128-R
AC characteristics (M95128, device grade 3)
Test conditions specified in Table 10 and Table 7
Symbol
Alt.
fC
fSCK
Clock frequency
tSLCH
tCSS1
S active setup time
30
ns
tSHCH
tCSS2
S not active setup time
30
ns
tSHSL
tCS
S deselect time
40
ns
tCHSH
tCSH
S active hold time
30
ns
S not active hold time
30
ns
tCHSL
Parameter
Max.
Unit
D.C.
10
MHz
tCH (1)
tCLH
Clock high time
45
ns
(1)
45
ns
tCLL
Clock low time
tCLCH
(2)
tRC
Clock rise time
2
µs
tCHCL
(2)
tFC
Clock fall time
2
µs
tCL
tDVCH
tDSU
Data in setup time
10
ns
tCHDX
tDH
Data in hold time
10
ns
tHHCH
Clock low hold time after HOLD not active
30
ns
tHLCH
Clock low hold time after HOLD active
30
ns
tCLHL
Clock low setup time before HOLD active
0
ns
tCLHH
Clock low setup time before HOLD not active
0
ns
tSHQZ
(2)
tDIS
tCLQV
tV
tCLQX
Output disable time
40
ns
Clock low to output valid
40
ns
tHO
Output hold time
tQLQH
(2)
tRO
Output rise time
40
ns
tQHQL
(2)
tFO
Output fall time
40
ns
tHHQV
tLZ
HOLD high to output valid
40
ns
tHLQZ (2)
tHZ
HOLD low to output high-Z
40
ns
tW
tWC
Write time
5
ms
1. tCH + tCL must never be less than the shortest possible clock period, 1 / fC(max)
2. Value guaranteed by characterization, not 100% tested in production.
30/44
Min.
Doc ID 5798 Rev 13
0
ns
M95128, M95128-W, M95128-R
Table 17.
DC and AC parameters
AC characteristics (M95128-W, device grade 6)
Test conditions specified in Table 10 and Table 8
Symbol
Alt.
fC
fSCK
Clock frequency
tSLCH
tCSS1
S active setup time
90
ns
tSHCH
tCSS2
S not active setup time
90
ns
tSHSL
tCS
S deselect time
100
ns
tCHSH
tCSH
S active hold time
90
ns
S not active hold time
90
ns
tCHSL
Parameter
Min.
Max.
Unit
D.C.
5
MHz
tCH (1)
tCLH
Clock high time
90
ns
(1)
90
ns
tCLL
Clock low time
tCLCH
(2)
tRC
Clock rise time
1
µs
tCHCL
(2)
tFC
Clock fall time
1
µs
tCL
tDVCH
tDSU
Data in setup time
20
ns
tCHDX
tDH
Data in hold time
30
ns
tHHCH
Clock low hold time after HOLD not active
70
ns
tHLCH
Clock low hold time after HOLD active
40
ns
tCLHL
Clock low setup time before HOLD active
0
ns
tCLHH
Clock low setup time before HOLD not active
0
ns
tSHQZ
(2)
tDIS
tCLQV
tV
tCLQX
Output disable time
100
ns
Clock low to output valid
60
ns
tHO
Output hold time
tQLQH
(2)
0
ns
tRO
Output rise time
50
ns
tQHQL
(2)
tFO
Output fall time
50
ns
tHHQV
tLZ
HOLD high to output valid
50
ns
tHLQZ (2)
tHZ
HOLD low to output high-Z
100
ns
tW
tWC
Write time
5
ms
1. tCH + tCL must never be less than the shortest possible clock period, 1 / fC(max)
2. Value guaranteed by characterization, not 100% tested in production.
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DC and AC parameters
Table 18.
M95128, M95128-W, M95128-R
AC characteristics (M95128-W, device grade 3)
Test conditions specified in Table 10 and Table 8
Symbol
Alt.
fC
fSCK
Clock frequency
tSLCH
tCSS1
S active setup time
90
ns
tSHCH
tCSS2
S not active setup time
90
ns
tSHSL
tCS
S deselect time
100
ns
tCHSH
tCSH
S active hold time
90
ns
S not active hold time
90
ns
tCHSL
Parameter
Max.
Unit
D.C.
5
MHz
tCH (1)
tCLH
Clock high time
90
ns
(1)
90
ns
tCLL
Clock low time
tCLCH
(2)
tRC
Clock rise time
1
µs
tCHCL
(2)
tFC
Clock fall time
1
µs
tCL
tDVCH
tDSU
Data in setup time
20
ns
tCHDX
tDH
Data in hold time
30
ns
tHHCH
Clock low hold time after HOLD not active
70
ns
tHLCH
Clock low hold time after HOLD active
40
ns
tCLHL
Clock low setup time before HOLD active
0
ns
tCLHH
Clock low setup time before HOLD not active
0
ns
tSHQZ
(2)
tDIS
tCLQV
tV
tCLQX
Output disable time
100
ns
Clock low to output valid
60
ns
tHO
Output hold time
tQLQH
(2)
tRO
Output rise time
50
ns
tQHQL
(2)
tFO
Output fall time
50
ns
tHHQV
tLZ
HOLD high to output valid
50
ns
tHLQZ (2)
tHZ
HOLD low to output high-Z
100
ns
tW
tWC
Write time
5
ms
1. tCH + tCL must never be less than the shortest possible clock period, 1 / fC(max)
2. Value guaranteed by characterization, not 100% tested in production.
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Min.
Doc ID 5798 Rev 13
0
ns
M95128, M95128-W, M95128-R
Table 19.
DC and AC parameters
AC characteristics (M95128-R)
Test conditions specified in Table 10 and Table 9(1)
Min.(2)
Max.(2)
Unit
Clock frequency
D.C.
2
MHz
tCSS1
S active setup time
200
ns
tSHCH
tCSS2
S not active setup time
200
ns
tSHSL
tCS
S deselect time
200
ns
tCHSH
tCSH
S active hold time
200
ns
S not active hold time
200
ns
Symbol
Alt.
fC
fSCK
tSLCH
tCHSL
Parameter
tCH (3)
tCLH
Clock high time
200
ns
(3)
200
ns
tCLL
Clock low time
tCLCH
(4)
tRC
Clock rise time
1
µs
tCHCL
(4)
tFC
Clock fall time
1
µs
tCL
tDVCH
tDSU
Data in setup time
40
ns
tCHDX
tDH
Data in hold time
50
ns
tHHCH
Clock low hold time after HOLD not active
140
ns
tHLCH
Clock low hold time after HOLD active
90
ns
tCLHL
Clock low setup time before HOLD active
0
ns
tCLHH
Clock low setup time before HOLD not active
0
ns
tSHQZ
(4)
tDIS
tCLQV
tV
tCLQX
Output disable time
250
ns
Clock low to output valid
150
ns
tHO
Output hold time
tQLQH
(4)
0
ns
tRO
Output rise time
100
ns
tQHQL
(4)
tFO
Output fall time
100
ns
tHHQV
tLZ
HOLD high to output valid
100
ns
tHLQZ (4)
tHZ
HOLD low to output high-Z
250
ns
tW
tWC
Write time
5
ms
1. If the application uses the M95128-R at 2.5 V  VCC  5.5 V and –40 °C  TA  +85 °C, please refer to
Table 17 instead of the above table.
2. This is preliminary data.
3. tCH + tCL must never be less than the shortest possible clock period, 1 / fC(max)
4. Value guaranteed by characterization, not 100% tested in production.
Doc ID 5798 Rev 13
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DC and AC parameters
M95128, M95128-W, M95128-R
Figure 15. Serial input timing
tSHSL
S
tCHSL
tCH
tSLCH
tCHSH
tSHCH
C
tDVCH
tCHCL
tCL
tCLCH
tCHDX
D
Q
LSB IN
MSB IN
High impedance
AI01447d
Figure 16. Hold timing
S
tHLCH
tCLHL
tHHCH
C
tCLHH
tHLQZ
tHHQV
Q
HOLD
AI01448c
34/44
Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
DC and AC parameters
Figure 17. Serial output timing
S
tCH
tSHSL
C
tCLQV
tCLCH
tCHCL
tCL
tSHQZ
tCLQX
Q
tQLQH
tQHQL
ADDR
D LSB IN
AI01449f
Doc ID 5798 Rev 13
35/44
Package mechanical data
10
M95128, M95128-W, M95128-R
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 18. SO8N – 8-lead plastic small outline, 150 mils body width, package outline
h x 45˚
A2
A
c
ccc
b
e
0.25 mm
GAUGE PLANE
D
k
8
E1
E
1
A1
L
L1
SO-A
1. Drawing is not to scale.
Table 20.
SO8N – 8-lead plastic small outline, 150 mils body width, package
mechanical data
inches(1)
millimeters
Symbol
Typ
Min
A
Max
Typ
1.75
Max
0.0689
A1
0.10
A2
1.25
b
0.28
0.48
0.011
0.0189
c
0.17
0.23
0.0067
0.0091
ccc
0.25
0.0039
0.0098
0.0492
0.10
0.0039
D
4.90
4.80
5.00
0.1929
0.189
0.1969
E
6.00
5.80
6.20
0.2362
0.2283
0.2441
E1
3.90
3.80
4.00
0.1535
0.1496
0.1575
e
1.27
–
–
0.05
-
-
h
0.25
0.50
0.0098
0.0197
k
0°
8°
0°
8°
L
0.40
1.27
0.0157
0.05
L1
1.04
0.0409
1. Values in inches are converted from mm and rounded to 4 decimal digits.
36/44
Min
Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
Package mechanical data
Figure 19. TSSOP8 – 8-lead thin shrink small outline, package outline
D
8
5
c
E1
1
E
4
α
A1
A
L
A2
L1
CP
b
e
TSSOP8AM
1. Drawing is not to scale.
Table 21.
TSSOP8 – 8-lead thin shrink small outline, package mechanical data
inches(1)
millimeters
Symbol
Typ
Min
A
Max
Min
1.200
A1
0.050
0.150
0.800
1.050
b
0.190
c
0.090
A2
Typ
1.000
CP
Max
0.0472
0.0020
0.0059
0.0315
0.0413
0.300
0.0075
0.0118
0.200
0.0035
0.0079
0.0394
0.100
0.0039
D
3.000
2.900
3.100
0.1181
0.1142
0.1220
e
0.650
–
–
0.0256
–
–
E
6.400
6.200
6.600
0.2520
0.2441
0.2598
E1
4.400
4.300
4.500
0.1732
0.1693
0.1772
L
0.600
0.450
0.750
0.0236
0.0177
0.0295
L1
1.000
0°
8°
0.0394

0°
N (number of leads)
8
8°
8
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Doc ID 5798 Rev 13
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Package mechanical data
M95128, M95128-W, M95128-R
Figure 20. UFDFPN8, 8-lead ultra thin fine pitch dual flat package no lead 2 x 3 mm,
outline
e
D
b
L1
L3
E
E2
L
A
D2
ddd
A1
UFDFPN-01
1. Drawing is not to scale.
2. The central pad (the area delimited by E2 and D2 in the above illustration) is internally pulled to VSS. It
must not be connected to any other voltage or signal line on the PCB, for example during the soldering
process.
Table 22.
UFDFPN8, 8-lead ultra thin fine pitch dual flat package no lead 2 x 3 mm,
mechanical data
inches(1)
millimeters
Symbol
Typ
Min
Max
Typ
Min
Max
A
0.55
0.45
0.6
0.0217
0.0177
0.0236
A1
0.02
0
0.05
0.0008
0
0.002
b
0.25
0.2
0.3
0.0098
0.0079
0.0118
D
2
1.9
2.1
0.0787
0.0748
0.0827
D2
1.6
1.5
1.7
0.063
0.0591
0.0669
E
3
2.9
3.1
0.1181
0.1142
0.122
E2
0.2
0.1
0.3
0.0079
0.0039
0.0118
e
0.5
-
-
0.0197
-
-
L
0.45
0.4
0.5
0.0177
0.0157
0.0197
L1
0.15
L3
ddd
(2)
0.0059
0.3
0.0118
0.08
0.08
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. Applied for exposed die paddle and terminals. Exclude embedding part of exposed die paddle from
measuring.
38/44
Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
11
Part numbering
Part numbering
Table 23.
Ordering information scheme
Example:
M95128
–
W MN 6
T
P
/P
Device type
M95 = SPI serial access EEPROM
Device function
128 = 128 Kbit (16384 x 8)
Operating voltage
blank = VCC = 4.5 to 5.5 V
W = VCC = 2.5 to 5.5 V
R = VCC = 1.8 to 5.5 V
Package
MN = SO8 (150 mils width)
DW = TSSOP8 (169 mils width)
MB = UFDFPN8 (MLP8 2 × 3 mm)
Device grade
6 = Industrial temperature range, –40 to 85 °C.
Device tested with standard test flow
3 = Device tested with high reliability certified flow(1)
Automotive temperature range (–40 to 125 °C)
Option
blank = Standard packing
T = Tape and reel packing
Plating technology
P or G = ECOPACK2® (RoHs compliant and Halogen-free)
Process(2)
/P or /PC = DP26% Chartered
1. ST strongly recommends the use of the Automotive Grade devices for use in an automotive environment.
The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801. Please ask your
nearest ST sales office for a co.
2. The Process letter /P applies only to Grade 3 devices.
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest ST sales office.
Doc ID 5798 Rev 13
39/44
Part numbering
M95128, M95128-W, M95128-R
Table 24.
Available M95128x products (package, voltage range, temperature grade)
M95128-R
(1.8 V to 5.5 V)
M95128-W
(2.5 V to 5.5 V)
M95128
(4.5 V to 5.5 V)
SO8N (MN)
Grade 6
Grade 6
Grade 3(1)
Grade 3(1)
UFDFPN8 (MLP8)
2 × 3 mm (MB)
Grade 6
-
-
TSSOP (DW)
Grade 6
Grade 3(1)
-
Package
1. Grade 3 products (without ECC) are codified as /P and /PC in Table 23: Ordering information scheme).
40/44
Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
12
Revision history
Revision history
Table 25.
Document revision history
Date
Revision
Changes
17-Nov-1999
2.1
New -V voltage range added (including the tables for DC characteristics,
AC characteristics, and ordering information).
07-Feb-2000
2.2
New -V voltage range extended to M95256 (including AC characteristics,
and ordering information).
22-Feb-2000
2.3
tCLCH and tCHCL, for the M95xxx-V, changed from 1s to 100ns
15-Mar-2000
2.4
-V voltage range changed to 2.7-3.6V
29-Jan-2001
2.5
Lead Soldering Temperature in the Absolute Maximum Ratings table
amended
Illustrations and Package Mechanical data updated
12-Jun-2001
2.6
Correction to header of Table 12B
TSSOP14 Illustrations and Package Mechanical data updated
Document promoted from Preliminary Data to Full Data Sheet
08-Feb-2002
2.7
Announcement made of planned upgrade to 10 MHz clock for the 5V, –40
to 85°C, range.
09-Aug-2002
2.8
M95128 split off to its own datasheet. Data added for new and forthcoming
products, including availability of the SO8 narrow package.
24-Feb-2003
2.9
Omission of SO8 narrow package mechanical data remedied
26-Jun-2003
2.10
-V voltage range removed
21-Nov-2003
3.0
Table of contents, and Pb-free options added. -S voltage range extended
to -R. VIL(min) improved to –0.45V
17-Mar-2004
4.0
Absolute Maximum Ratings for VIO(min) and VCC(min) changed. Soldering
temperature information clarified for RoHS compliant devices. Device
grade information clarified
21-Oct-2004
5.0
M95128 datasheet merged back in. Product List summary table added.
AEC-Q100-002 compliance. Device Grade information clarified. tHHQX
corrected to tHHQV. 10MHz product becomes standard
Doc ID 5798 Rev 13
41/44
Revision history
Table 25.
Date
13-Apr-2006
27-Jun-2006
04-Oct-2007
15-Jan-2008
42/44
M95128, M95128-W, M95128-R
Document revision history (continued)
Revision
Changes
6
New M95128 datasheet extracted from the M95128/256 datasheet. Order
of sections modified.
ECC (error correction code) and Write cycling paragraph added.
Section 3.8: Supply voltage (VCC) added and information removed below
Section 4: Operating features.
Power up state removed below Section 6: Delivery state.
Figure 13: SPI modes supported modified and Note 2 added.
ICC1 specified over the whole VCC range and ICC0 added to Table 13,
Table 14 and Table 15.
ICC specified over the whole VCC range in Table 13.
tCHHL and tCHHH replaced by tCLHL and tCLHH, respectively.
Figure 16: Hold timing modified.
Process letter and Note 1 added to Table 23: Ordering information
scheme.
“AC Characteristics (M95128, Device Grade 6)” Table (for 10MHz
frequency) removed.
Note 1 removed from Table 19: AC characteristics (M95128-R).
TA added to Table 6: Absolute maximum ratings.
PDIP8 (BN) and SO8 wide (MW) packages removed. M95128-W and
M95128-R are no longer under development.
Test conditions changed for VOL and VOH in Section Table 14.: DC
characteristics (M95128-W, device grade 3).
7
Figure 12: Bus master and memory devices on the SPI bus modified.
SO8N package specifications updated (see Table 20 and Figure 18).
V Process specified and A Process replaced by P in Table 23: Ordering
information scheme.
8
Section 3.8: Supply voltage (VCC), Section 4.3: Data Protection and
protocol control, Section 5.4: Write Status Register (WRSR), Section 5.6:
Write to Memory Array (WRITE) and Section 5.6.1: ECC (error correction
code) and Write cycling updated.
Note removed below Figure 12: Bus master and memory devices on the
SPI bus, replaced by paragraph.
Test conditions modified for ICC1 and ICC0 in Table 15: DC characteristics
(M95128-R). AC characteristics values added for fC frequency = 10 MHz in
Table 16: AC characteristics (M95128, device grade 3).
tW modified in Table 19: AC characteristics (M95128-R).
Section 10: Package mechanical data:
– UFDFPN8 package added
– Package mechanical inch values calculated from mm and rounded to 4
decimal digits
Table 24: Available M95128x products (package, voltage range,
temperature grade) added.
Blank removed below Plating technology, first note removed, process A
added and process V removed in Table 23: Ordering information scheme.
9
Section 3.7: VSS ground added. Section 3.8.2: Device reset, Section 3.8.4:
Power-down and Section 5.6.1: ECC (error correction code) and Write
cycling modified.
VIL and VIH modified in Table 15: DC characteristics (M95128-R).
Table 24: Available M95128x products (package, voltage range,
temperature grade) updated.
Doc ID 5798 Rev 13
M95128, M95128-W, M95128-R
Table 25.
Date
Revision history
Document revision history (continued)
Revision
Changes
10
M95128, device grade 3 devices is now offered at 10 MHz frequency.
Section 3.8: Supply voltage (VCC) on page 10 and Section 5.4: Write
Status Register (WRSR) on page 18 updated.
Table 15: DC characteristics (M95128-R) on page 29 modified.
tCH and tCL modified in Table 16: AC characteristics (M95128, device
grade 3) on page 30.
Figure 15: Serial input timing, Figure 16: Hold timing and Figure 17: Serial
output timing modified.
Process A removed from Table 23: Ordering information scheme.
Small text changes.
11
Section 3.8: Supply voltage (VCC) and Section 5.4: Write Status Register
(WRSR) updated.
Note added to Section 5.6: Write to Memory Array (WRITE).
ICC modified in Table 12: DC characteristics (M95128, device grade 3).
VRES added to DC characteristics tables 12, 13, 14 and 15.
Note added to Table 19: AC characteristics (M95128-R).
Note added below Figure 20: UFDFPN8, 8-lead ultra thin fine pitch dual
flat package no lead 2 x 3 mm, outline.
Small text changes.
12-Jan-2010
12
Section 5.6.1: ECC (error correction code) and write cycling modified
(applies to all devices).
TLEAD, IOL and IOH added to Table 6: Absolute maximum ratings.
Note added to Table 15: DC characteristics (M95128-R).
Process modified in Table 23: Ordering information scheme.
All packages are ECOPACK2 compliant.
02-Mar-2010
13
Section 5.6.1: ECC (error correction code) and write cycling and Table 24:
Available M95128x products (package, voltage range, temperature grade)
updated.
11-Jul-2008
17-Feb-2009
Doc ID 5798 Rev 13
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M95128, M95128-W, M95128-R
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