PD - 96121 IRF6726MPbF IRF6726MTRPbF DirectFET Power MOSFET l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested Typical values (unless otherwise specified) VDSS VGS 30V max ±20V max Qg RDS(on) 1.3mΩ@10V 1.9mΩ@ 4.5V Qgd Qgs2 Qrr Qoss Vgs(th) 16nC 5.4nC 45nC 28nC 1.7V tot 51nC RDS(on) DirectFET ISOMETRIC MT Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description The IRF6726MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6726MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6726MPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses. Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g h Typical RDS(on) (mΩ) 4 ID = 32A 3 2 T J = 125°C 1 T J = 25°C 0 0 5 10 15 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. www.irf.com e e f VGS, Gate-to-Source Voltage (V) VDS Max. Units 30 ±20 32 25 180 250 260 25 V A mJ A 5.0 ID= 25A 4.0 VDS= 24V VDS= 15V 3.0 2.0 1.0 0.0 0 10 20 30 40 50 60 QG, Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.82mH, RG = 25Ω, IAS = 25A. 1 08/14/07 IRF6726MPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 32A VGS = 4.5V, ID = 25A Drain-to-Source Breakdown Voltage 30 ––– ––– ∆ΒVDSS/∆TJ RDS(on) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 21 1.3 ––– 1.7 VGS(th) Gate Threshold Voltage ––– 1.35 1.9 1.7 2.4 2.35 ∆VGS(th)/∆TJ IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– -6.0 ––– ––– 1.0 IGSS Gate-to-Source Forward Leakage ––– ––– ––– ––– 150 100 Gate-to-Source Reverse Leakage Forward Transconductance ––– 150 ––– ––– -100 ––– Total Gate Charge Pre-Vth Gate-to-Source Charge ––– ––– 51 12 77 ––– Post-Vth Gate-to-Source Charge Gate-to-Drain Charge ––– ––– 5.4 16 ––– ––– Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 18 21 ––– ––– Output Charge Gate Resistance ––– ––– 28 1.0 ––– 1.8 Turn-On Delay Time Rise Time ––– ––– 20 30 ––– ––– Turn-Off Delay Time Fall Time ––– ––– 25 17 ––– ––– Input Capacitance Output Capacitance ––– ––– 6140 1270 ––– ––– Reverse Transfer Capacitance ––– 590 ––– Min. Typ. Max. Units gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Conditions Typ. Max. Units BVDSS V V i i VDS = VGS, ID = 150µA mV/°C µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V S VDS = 15V, ID = 25A nC VDS = 15V VGS = 4.5V ID = 25A See Fig. 15 nC VDS = 16V, VGS = 0V Ω i VDD = 15V, VGS = 4.5V ns ID = 25A RG = 1.8Ω See Fig. 17 VGS = 0V pF VDS = 15V ƒ = 1.0MHz Diode Characteristics Parameter Continuous Source Current ––– ––– 110 ISM (Body Diode) Pulsed Source Current ––– ––– 250 (Body Diode) Diode Forward Voltage ––– 0.77 1.0 V Reverse Recovery Time Reverse Recovery Charge ––– ––– 27 45 41 68 ns nC VSD trr Qrr g Conditions MOSFET symbol IS A showing the integral reverse p-n junction diode. TJ = 25°C, IS = 25A, VGS = 0V TJ = 25°C, IF = 25A di/dt = 500A/µs i i Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF6726MPbF Absolute Maximum Ratings e e f PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TP TJ TSTG Max. Units 2.8 1.8 89 270 -40 to + 150 W Parameter Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range °C Thermal Resistance Parameter el jl kl fl RθJA RθJA RθJA RθJC RθJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor e Typ. Max. Units ––– 12.5 20 ––– 1.0 45 ––– ––– 1.4 ––– °C/W 0.022 W/°C Thermal Response ( Z thJA ) 100 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 τJ 0.1 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 Ri (°C/W) τA τ1 τ2 τ2 τ3 τ3 τ4 τA τ4 Ci= τi/Ri Ci= τi/Ri 0.01 0.001 1E-006 0.0001 τi (sec) 0.000194 5.4838 0.045124 21.2371 1.1955 17.1160 45.9 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 1.1632 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized Rθ is measured at TJ of approximately 90°C. back and with small clip heatsink. Surface mounted on 1 in. square Cu (still air). www.irf.com Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 3 IRF6726MPbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V 100 10 2.5V 1 BOTTOM 2.5V 10 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 Tj = 150°C 1 10 100 0.1 10 100 Fig 5. Typical Output Characteristics 2.0 1000 ID = 32A VDS = 15V ≤60µs PULSE WIDTH Typical RDS(on) (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 T J = 150°C T J = 25°C T J = -40°C 10 1 V GS = 10V V GS = 4.5V 1.5 1.0 0.5 0.1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd Typical RDS(on) ( mΩ) Ciss Coss 1000 Crss T J = 25°C Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 8.0V Vgs = 10V 4 C oss = C ds + C gd 10000 20 40 60 80 100 120 140 160 Fig 7. Normalized On-Resistance vs. Temperature Fig 6. Typical Transfer Characteristics 100000 -60 -40 -20 0 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V 3 2 1 100 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 0 50 100 150 200 ID, Drain Current (A) Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage www.irf.com IRF6726MPbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100µsec 100 T J = 150°C 100 OPERATION IN THIS AREA LIMITED BY R DS(on) T J = 25°C T J = -40°C 10 1 1msec 10 10msec 1 0.1 VGS = 0V DC T A = 25°C T J = 150°C Single Pulse 0.01 0 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Fig 10. Typical Source-Drain Diode Forward Voltage ID, Drain Current (A) 160 140 120 100 80 60 40 20 100 100.00 2.5 2.0 1.5 1.0 125 ID = 100µA ID = 150µA ID = 250µA ID = 1.0mA ID = 1.0A 0.5 0 75 10.00 3.0 Typical VGS(th) Gate threshold Voltage (V) 180 50 1.00 Fig11. Maximum Safe Operating Area 200 25 0.10 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature Fig 13. Typical Threshold Voltage vs. Junction Temperature EAS , Single Pulse Avalanche Energy (mJ) 1200 ID 2.7A 3.9A BOTTOM 25A TOP 1000 800 600 400 200 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current www.irf.com 5 IRF6726MPbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) S Qgodr Fig 15a. Gate Charge Test Circuit Qgd Qgs2 Qgs1 Fig 15b. Gate Charge Waveform V(BR)DSS 15V DRIVER L VDS tp D.U.T V RGSG 20V + - VDD IAS A I AS 0.01Ω tp Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit VDS VGS RG RD VDS 90% D.U.T. + - V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10% VGS td(on) Fig 17a. Switching Time Test Circuit 6 tr t d(off) tf Fig 17b. Switching Time Waveforms www.irf.com IRF6726MPbF Driver Gate Drive D.U.T + RG * • • • • P.W. Period *** D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - - P.W. + V DD ** + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel ISD *** VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs DirectFET Board Footprint, MT Outline (Medium Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D S D G D www.irf.com S D 7 IRF6726MPbF DirectFET Outline Dimension, MT Outline (Medium Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC MAX CODE MIN 6.35 A 6.25 5.05 B 4.80 3.95 C 3.85 0.45 D 0.35 0.82 E 0.78 0.92 F 0.88 1.82 G 1.78 H 0.98 1.02 0.67 J 0.63 K 0.88 1.01 2.63 L 2.46 M 0.616 0.676 R 0.020 0.080 0.17 P 0.08 IMPERIAL MIN 0.246 0.189 0.152 0.014 0.031 0.035 0.070 0.039 0.025 0.035 0.097 0.0235 0.0008 0.003 MAX 0.250 0.199 0.156 0.018 0.032 0.036 0.072 0.040 0.026 0.039 0.104 0.0274 0.0031 0.007 DirectFET Part Marking GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" 8 www.irf.com IRF6726MPbF DirectFET Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6726MTRPBF). For 1000 parts on 7" reel, order IRF6726MTR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MIN MAX MIN MIN CODE MAX MAX MAX 12.992 6.9 A N.C N.C 177.77 N.C 330.0 N.C B 0.795 0.75 N.C 19.06 20.2 N.C N.C N.C 0.504 C 0.53 0.50 13.5 12.8 0.520 13.2 12.8 D 0.059 0.059 1.5 1.5 N.C N.C N.C N.C E 3.937 2.31 58.72 100.0 N.C N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 18.4 13.50 G 0.488 0.47 11.9 12.4 N.C 14.4 12.01 0.567 0.469 H 0.47 11.9 11.9 N.C 15.4 12.01 0.606 LOADED TAPE FEED DIRECTION NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS METRIC IMPERIAL MIN MAX MIN MAX 0.311 7.90 0.319 8.10 0.154 3.90 4.10 0.161 0.469 0.484 11.90 12.30 0.215 5.45 0.219 5.55 0.201 5.10 5.30 0.209 0.256 0.264 6.50 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60 Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2007 www.irf.com 9