MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Symbol MMBT5550 MMBT5551 MMBT5550 MMBT5551 Emitter −Base Voltage Collector Current − Continuous Electrostatic Discharge Human Body Model Machine Model VCEO VCBO Value Unit Vdc 140 160 6.0 Vdc IC 600 mAdc V > 8000 > 400 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C PD RqJA PD 2 EMITTER Vdc 160 180 VEBO ESD 1 BASE Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. MARKING DIAGRAM 3 1 2 x1x M G G SOT−23 (TO−236) CASE 318 STYLE 6 1 x1x = Device Code M1F = MMBT5550LT G1 = MMBT5551LT M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT5550LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) MMBT5551LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) MMBT5551LT3G SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 September, 2010 − Rev. 9 1 Publication Order Number: MMBT5550LT1/D MMBT5550LT1G, MMBT5551LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 140 160 − − 160 180 − − 6.0 − − − − − 100 50 100 50 − 50 60 80 60 80 20 30 − − 250 250 − − − − − 0.15 0.25 0.20 − − − 1.0 1.2 1.0 − − 50 100 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) MMBT5550 MMBT5551 Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MMBT5550 MMBT5551 Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) MMBT5550 MMBT5551 MMBT5550 MMBT5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) ICBO IEBO Vdc Vdc Vdc nAdc mAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Both Types MMBT5550 MMBT5551 Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Both Types MMBT5550 MMBT5551 Collector Emitter Cut−off (VCB = 10 V) (VCB = 75 V) Both Types 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. http://onsemi.com 2 hFE VCE(sat) VBE(sat) ICES − Vdc Vdc nA MMBT5550LT1G, MMBT5551LT1G 500 300 h FE, DC CURRENT GAIN VCE = 1.0 V VCE = 5.0 V TJ = 125°C 200 25°C 100 -55°C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 Figure 2. Collector Saturation Region 101 0.30 IC/IB = 10 VCE(sat), Coll-Emitt Saturation Voltage (V) IC, COLLECTOR CURRENT (A) μ VCE = 30 V 100 10-1 TJ = 125°C 10-2 75°C REVERSE 10-3 FORWARD 25°C 10-4 10-5 0.4 IC = ICES 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.5 0.6 0.25 150°C 0.20 0.15 25°C 0.10 -55°C 0.05 0 0.0001 Figure 3. Collector Cut−Off Region 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 4. VCE(sat) http://onsemi.com 3 0.1 MMBT5550LT1G, MMBT5551LT1G 1.00 1.10 IC/IB = 10 -55°C 0.90 0.80 25°C 0.70 0.60 150°C 0.50 0.40 0.30 0.20 0.0001 VCE = 10 V 1.00 VBE(on), Base-Emitter Voltage (V) VBE(sat), Base-Emitt Saturation Voltage (V) 1.10 0.90 -55°C 0.80 25°C 0.70 0.60 150°C 0.50 0.40 0.30 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.20 0.0001 0.1 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 5. VBE(sat) Figure 6. VBE(on) 100 70 50 TJ = - 55°C to +135°C 1.5 0.5 qVC for VCE(sat) 0 - 0.5 - 1.0 qVB for VBE(sat) - 1.5 20 10 Cibo 7.0 5.0 Cobo 3.0 2.0 - 2.0 - 2.5 0.1 TJ = 25°C 30 1.0 C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENT (mV/ °C) 2.5 2.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 1.0 0.2 100 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Temperature Coefficients Figure 8. Capacitances VCC 30 V VBB -8.8 V 10.2 V Vin 100 10 ms INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 mF 3.0 k RB Vout 5.1 k Vin 100 1N914 Values Shown are for IC @ 10 mA Figure 9. Switching Time Test Circuit http://onsemi.com 4 RC 10 20 MMBT5550LT1G, MMBT5551LT1G 1 VCE = 1 V TA = 25°C IC, COLLECTOR CURRENT (A) fT, Current Gain Bandwidth Product (Mhz) 1000 100 10 1 0.1 100 1.0 10 IC, COLLECTOR CURRENT (mA) 10 mS 0.1 1.0 S 0.01 0.001 1.0 1000 100 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 10. Current Gain Bandwidth Product Figure 11. Safe Operating Area 1000 500 30 300 20 200 10 Cibo 7.0 5.0 Cobo 3.0 tr @ VCC = 120 V tr @ VCC = 30 V 100 50 td @ VEB(off) = 1.0 V 30 VCC = 120 V 20 2.0 1.0 0.2 IC/IB = 10 TJ = 25°C TJ = 25°C t, TIME (ns) C, CAPACITANCE (pF) 100 70 50 1000 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 10 0.2 0.3 0.5 20 VR, REVERSE VOLTAGE (VOLTS) 20 30 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 12. Capacitances Figure 13. Turn−On Time http://onsemi.com 5 1.0 50 100 200 MMBT5550LT1G, MMBT5551LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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