PD - 96231
IRLB8748PbF
HEXFET® Power MOSFET
Applications
l
Optimized for UPS/Inverter Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial use
l
VDSS
RDS(on) max
4.8m:
30V
15nC
D
G
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
Qg
D
S
TO-220AB
IRLB8748PbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
30
VGS
± 20
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
65
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
78
IDM
Pulsed Drain Current
370
PD @TC = 25°C
PD @TC = 100°C
V
f
92
c
h
Maximum Power Dissipation h
A
75
Maximum Power Dissipation
W
38
0.5
Linear Derating Factor
TJ
TSTG
Units
W/°C
-55 to + 175
Operating Junction and
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
300 (1.6mm from case)
10 lbf in (1.1N m)
y
y
Thermal Resistance
h
Parameter
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat Greased Surface
RθJA
Junction-to-Ambient g
Notes through are on page 9
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Typ.
Max.
–––
2.0
0.5
–––
–––
62
Units
°C/W
1
04/22/09
IRLB8748PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
∆ΒVDSS/∆TJ
Min. Typ. Max. Units
Conditions
30
–––
–––
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
21
3.8
–––
4.8
Gate Threshold Voltage
–––
1.35
5.5
1.8
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
-7.1
–––
Gate-to-Source Forward Leakage
–––
–––
–––
–––
Gate-to-Source Reverse Leakage
Forward Transconductance
–––
196
–––
–––
mV/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 40A
mΩ
6.8
VGS = 4.5V, ID = 32A
2.35
V
VDS = VGS, ID = 50µA
––– mV/°C
VDS = 24V, VGS = 0V
1.0
µA
150
VDS = 24V, VGS = 0V, TJ = 125°C
100
VGS = 20V
nA
-100
VGS = -20V
–––
S VDS = 15V, ID = 32A
Total Gate Charge
Pre-Vth Gate-to-Source Charge
–––
–––
15
3.6
23
–––
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
2.2
5.9
–––
–––
Qgodr
Qsw
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
–––
3.9
8.1
–––
–––
Qoss
Output Charge
Gate Resistance
–––
Turn-On Delay Time
Rise Time
–––
–––
–––
11
2.0
14
96
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
16
34
–––
–––
Ciss
Coss
Input Capacitance
Output Capacitance
–––
–––
2139
464
–––
–––
Crss
Reverse Transfer Capacitance
–––
199
–––
RDS(on)
VGS(th)
∆VGS(th)/∆TJ
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
RG
td(on)
tr
V
VGS = 0V, ID = 250µA
Drain-to-Source Breakdown Voltage
e
e
VDS = 15V
nC
VGS = 4.5V
ID = 32A
–––
nC
VDS = 16V, VGS = 0V
3.5
–––
–––
Ω
ns
pF
VDD = 15V, VGS = 4.5V
ID = 32A
e
RG = 1.8Ω
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
EAR
Avalanche Current
Repetitive Avalanche Energy
c
d
c
Typ.
–––
Max.
114
Units
mJ
–––
–––
32
7.5
A
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
–––
–––
ISM
Pulsed Source Current
(Body Diode)
–––
–––
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
23
Qrr
Reverse Recovery Charge
–––
39
ton
2
c
Forward Turn-On Time
f
Conditions
MOSFET symbol
92
A
showing the
integral reverse
1.0
35
V
ns
59
nC
p-n junction diode.
TJ = 25°C, IS = 32A, VGS = 0V
TJ = 25°C, IF = 32A, VDD = 15V
di/dt = 200A/µs
370
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRLB8748PbF
1000
1000
100
BOTTOM
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
100
3.0V
BOTTOM
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
3.0V
10
≤60µs PULSE WIDTH
Tj = 175°C
≤60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
1
10
0.1
100
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current (A)
1
100
T J = 175°C
10
T J = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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ID = 40A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
1
1.8
8
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRLB8748PbF
10000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 32A
C, Capacitance (pF)
C oss = C ds + C gd
Ciss
1000
Coss
Crss
10.0
8.0
6.0
4.0
2.0
0.0
100
1
10
0
100
1000
ID, Drain-to-Source Current (A)
1000
100
20
30
40
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
ISD, Reverse Drain Current (A)
10
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
TJ = 175°C
10
T J = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS= 24V
VDS= 15V
12.0
2.5
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLB8748PbF
2.5
100
VGS(th) , Gate threshold Voltage (V)
Limited By Package
ID, Drain Current (A)
80
60
40
20
2.0
1.5
ID = 50µA
ID = 250µA
ID = 1.0mA
1.0
0.5
0
25
50
75
100
125
150
-75 -50 -25
175
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
τJ
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
R1
R1
τJ
τ1
R2
R2
R3
R3
R4
R4
τC
τ1
τ2
τ2
τ3
τ3
Ci= τi/Ri
Ci i/Ri
τ4
τ4
Ri (°C/W)
τi (sec)
1.55246
0.005303
0.00682
8.250407
0.00172
6.932919
0.43999
0.000317
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
18
500
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRLB8748PbF
ID = 40A
16
14
12
10
T J = 125°C
8
6
T J = 25°C
ID
6.73A
11.6A
BOTTOM 32A
450
TOP
400
350
300
250
200
150
100
50
0
4
2
4
6
8
10
25
50
75
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
V DS
L
20V
VGS
V GS
DRIVER
RG
D.U.T
RG
IAS
tp
+
V
- DD
125
150
175
Fig 13c. Maximum Avalanche Energy
vs. Drain Current
15V
VDS
100
Starting T J , Junction Temperature (°C)
RD
D.U.T.
+
-V DD
VGS
A
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.01Ω
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 14a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
I AS
Fig 13b. Unclamped Inductive Waveforms
6
tr
t d(off)
tf
Fig 14b. Switching Time Waveforms
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IRLB8748PbF
D.U.T
Driver Gate Drive
P.W.
+
+
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
V DD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D=
Period
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
12V
Vgs
.2µF
.3µF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Qgodr
Qgd
Qgs2 Qgs1
Current Sampling Resistors
Fig 16. Gate Charge Test Circuit
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Fig 17. Gate Charge Waveform
7
IRLB8748PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRLB8748PbF
TO-220AB Part Marking Information
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.22mH, RG = 25Ω,
IAS = 32A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on
maximum allowable junction temperature.
Package limitation current is 78A.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ approximately 90°C.
This is only applied to TO-220AB pakcage.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2009
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9